페이지 43 - 트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드

기록 2,060
페이지  43/74
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Resistor - Base (R1) (Ohms)
Resistor - Emitter Base (R2) (Ohms)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
Frequency - Transition
Power - Max
Mounting Type
Package / Case
Supplier Device Package
RN4908(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: 6-TSSOP, SC-88, SOT-363
재고3,984
100mA
50V
22k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
FMG9AT248
Rohm Semiconductor

TRANS 2NPN PREBIAS 0.3W SMT5

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMT5
패키지: SC-74A, SOT-753
재고7,904
100mA
50V
10k
10k
30 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
300mW
Surface Mount
SC-74A, SOT-753
SMT5
XP0121100L
Panasonic Electronic Components

TRANS 2NPN PREBIAS 0.15W SMINI5

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: SMini5-G1
패키지: 5-TSSOP, SC-70-5, SOT-353
재고3,504
100mA
50V
10k
10k
35 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
150mW
Surface Mount
5-TSSOP, SC-70-5, SOT-353
SMini5-G1
PBLS4005V,115
NXP

TRANS NPN PREBIAS/PNP SOT666

  • Transistor Type: 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V, 40V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 150 @ 100mA, 2V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 300MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
패키지: SOT-563, SOT-666
재고2,816
100mA, 500mA
50V, 40V
47k
47k
80 @ 5mA, 5V / 150 @ 100mA, 2V
150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
1µA
300MHz
300mW
Surface Mount
SOT-563, SOT-666
SOT-666
DDA122TH-7
Diodes Incorporated

TRANS PREBIAS DUAL PNP SOT563

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 220
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 200MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: SOT-563, SOT-666
재고2,464
100mA
50V
220
-
100 @ 1mA, 5V
300mV @ 250µA, 5mA
-
200MHz
150mW
Surface Mount
SOT-563, SOT-666
SOT-563
hot NSBC144EPDP6T5G
ON Semiconductor

TRANS NPN/PNP PREBIAS SOT963

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 339mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
패키지: SOT-963
재고10,524
100mA
50V
47k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
-
339mW
Surface Mount
SOT-963
SOT-963
NSBC143ZPDXV6T1G
ON Semiconductor

TRANS PREBIAS NPN/PNP SOT563

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: SOT-563, SOT-666
재고2,624
100mA
50V
4.7k
47k
80 @ 5mA, 10V
250mV @ 1mA, 10mA
500nA
-
500mW
Surface Mount
SOT-563, SOT-666
SOT-563
PUMB1,115
Nexperia USA Inc.

TRANS 2PNP PREBIAS 0.3W 6TSSOP

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: 6-TSSOP, SC-88, SOT-363
재고4,432
100mA
50V
22k
22k
60 @ 5mA, 5V
150mV @ 500µA, 10mA
1µA
-
300mW
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
hot NSB4904DW1T1G
ON Semiconductor

TRANS NPN/PNP PREBIAS 0.25W SC88

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고36,000
100mA
50V
47k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
-
250mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
RN1610(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.3W SM6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6
패키지: SC-74, SOT-457
재고4,800
100mA
50V
4.7k
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250MHz
300mW
Surface Mount
SC-74, SOT-457
SM6
RN2709JE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ESV

  • Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
패키지: SOT-553
재고33,318
100mA
50V
47k
22k
70 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
100mW
Surface Mount
SOT-553
ESV
DMG963030R
Panasonic Electronic Components

TRANS PREBIAS NPN/PNP SSMINI5

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-665
  • Supplier Device Package: SSMini5-F4-B
패키지: SOT-665
재고3,264
100mA
50V
47k
47k
80 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
125mW
Surface Mount
SOT-665
SSMini5-F4-B
DMA564020R
Panasonic Electronic Components

TRANS PREBIAS DUAL PNP SMINI6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: SMini6-F3-B
패키지: 6-SMD, Flat Leads
재고7,424
100mA
50V
22k
22k
60 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
150mW
Surface Mount
6-SMD, Flat Leads
SMini6-F3-B
hot UP01213G0L
Panasonic Electronic Components

TRANS PREBIAS DUAL NPN SSMINI5

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-665
  • Supplier Device Package: SSMini5-F3
패키지: SOT-665
재고1,228,368
100mA
50V
47k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
150MHz
125mW
Surface Mount
SOT-665
SSMini5-F3
PBLS6001D,115
Nexperia USA Inc.

TRANS NPN PREBIAS/PNP 0.6W 6TSOP

  • Transistor Type: 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 100mA, 700mA
  • Voltage - Collector Emitter Breakdown (Max): 50V, 60V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V / 150 @ 500mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 340mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 1µA, 100nA
  • Frequency - Transition: 185MHz
  • Power - Max: 600mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
패키지: SC-74, SOT-457
재고22,380
100mA, 700mA
50V, 60V
2.2k
2.2k
30 @ 20mA, 5V / 150 @ 500mA, 5V
150mV @ 500µA, 10mA / 340mV @ 100mA, 1A
1µA, 100nA
185MHz
600mW
Surface Mount
SC-74, SOT-457
6-TSOP
hot DCX4710H-7
Diodes Incorporated

TRANS PREBIAS NPN/PNP SOT563

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k, 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V / 80 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: SOT-563, SOT-666
재고648,000
100mA
50V
10k
10k, 47k
35 @ 5mA, 5V / 80 @ 5mA, 5V
250mV @ 300µA, 10mA
500nA
250MHz
150mW
Surface Mount
SOT-563, SOT-666
SOT-563
hot NSB1706DMW5T1G
ON Semiconductor

TRANS 2NPN PREBIAS 0.25W SC70

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: SC-88A (SC-70-5 / SOT-353)
패키지: 5-TSSOP, SC-70-5, SOT-353
재고33,720
100mA
50V
4.7k
47k
80 @ 5mA, 10V
250mV @ 1mA, 10mA
500nA
-
250mW
Surface Mount
5-TSSOP, SC-70-5, SOT-353
SC-88A (SC-70-5 / SOT-353)
hot UMD3NTR
Rohm Semiconductor

TRANS NPN/PNP PREBIAS 0.15W UMT6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
패키지: 6-TSSOP, SC-88, SOT-363
재고1,620,144
100mA
50V
10k
10k
30 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
150mW
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
PUMD4-QX
Nexperia USA Inc.

PUMD4-Q/SOT363/SC-88

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: -
Request a Quote
100mA
50V
10kOhms
-
200 @ 1mA, 5V
150mV @ 500µA, 10mA
1µA
-
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
DCX114EUQ-13-F
Diodes Incorporated

PREBIAS TRANSISTOR SOT363 T&R 10

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: -
Request a Quote
100mA
50V
10kOhms
10kOhms
30 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA (ICBO)
250MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
NSBA124EDXV6T5
onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: 2 PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: -
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100mA
50V
22kOhms
22kOhms
60 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
-
500mW
Surface Mount
SOT-563, SOT-666
SOT-563
NSBC114EDXV6T1
onsemi

TRANS 2NPN PREBIAS 0.5W SOT563

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Resistor - Base (R1) (Ohms): -
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: -
  • Power - Max: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
UMD22N-TP
Micro Commercial Co

TRANS PREBIAS 1NPN 1PNP 50V

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: -
Request a Quote
100mA
50V
4.7kOhms
4.7kOhms
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
150mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
EMB59T2R
Rohm Semiconductor

PNP+PNP DIGITAL TRANSISTOR (WITH

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
패키지: -
재고20,640
100mA
50V
10kOhms
47kOhms
80 @ 5mA, 10V
150mV @ 500µA, 5mA
500nA
250MHz
150mW
Surface Mount
SOT-563, SOT-666
EMT6
EMD72T2R
Rohm Semiconductor

PNP+NPN DIGITAL TRANSISTOR (WITH

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
패키지: -
재고56,046
100mA
50V
4.7kOhms
47kOhms
80 @ 5mA, 10V
150mV @ 500µA, 5mA
500nA
250MHz
150mW
Surface Mount
SOT-563, SOT-666
EMT6
PUMD12-QF
Nexperia USA Inc.

PUMD12-Q/SOT363/SC-88

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 230MHz, 180MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: -
Request a Quote
100mA
50V
47kOhms
47kOhms
80 @ 5mA, 5V
100mV @ 500µA, 10mA
1µA
230MHz, 180MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
NSBC123JPDXV6T5
onsemi

TRANS BR NPN/PNP DUAL 50V SOT563

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Resistor - Base (R1) (Ohms): -
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: -
  • Power - Max: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
PUMH7HX
Nexperia USA Inc.

PUMH7HX

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA
  • Frequency - Transition: 230MHz
  • Power - Max: 240mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: -
Request a Quote
100mA
50V
4.7kOhms
-
200 @ 1mA, 5V
100mV @ 500µA, 10mA
100nA
230MHz
240mW
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP