페이지 48 - 트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드

기록 2,060
페이지  48/74
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Resistor - Base (R1) (Ohms)
Resistor - Emitter Base (R2) (Ohms)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
Frequency - Transition
Power - Max
Mounting Type
Package / Case
Supplier Device Package
RN49A1(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: 6-TSSOP, SC-88, SOT-363
재고3,104
100mA
50V
2.2k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
BCR133SH6433XTMA1
Infineon Technologies

TRANS 2NPN PREBIAS 0.25W SOT363

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 130MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
패키지: 6-VSSOP, SC-88, SOT-363
재고6,496
100mA
50V
10k
10k
30 @ 5mA, 5V
300mV @ 500µA, 10mA
-
130MHz
250mW
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
EMF8T2R
Rohm Semiconductor

TRANS NPN PREBIAS/NPN 0.15W EMT6

  • Transistor Type: 1 NPN Pre-Biased, 1 NPN
  • Current - Collector (Ic) (Max): 100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V, 12V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 270 @ 10mA, 2V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz, 320MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
패키지: SOT-563, SOT-666
재고7,776
100mA, 500mA
50V, 12V
47k
47k
68 @ 5mA, 5V / 270 @ 10mA, 2V
300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
500nA
250MHz, 320MHz
150mW
Surface Mount
SOT-563, SOT-666
EMT6
PUMD18,115
Nexperia USA Inc.

TRANS PREBIAS NPN/PNP 6TSSOP

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: 6-TSSOP, SC-88, SOT-363
재고2,688
100mA
50V
4.7k
10k
50 @ 10mA, 5V
100mV @ 500µA, 10mA
1µA
-
300mW
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
PEMD2,315
Nexperia USA Inc.

TRANS PREBIAS NPN/PNP SOT666

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
패키지: SOT-563, SOT-666
재고4,128
100mA
50V
22k
22k
60 @ 5mA, 5V
150mV @ 500µA, 10mA
1µA
-
300mW
Surface Mount
SOT-563, SOT-666
SOT-666
NSBC114TDP6T5G
ON Semiconductor

TRANS 2NPN PREBIAS 0.339W SOT963

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 339mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
패키지: SOT-963
재고4,208
100mA
50V
10k
-
160 @ 5mA, 10V
250mV @ 1mA, 10mA
500nA
-
339mW
Surface Mount
SOT-963
SOT-963
ACX124EUQ-13R
Diodes Incorporated

PREBIAS TRANSISTOR SOT363

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k, 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k, 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 250MHz
  • Power - Max: 270mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고7,728
100mA
50V
22k, 22k
22k, 22k
-
-
-
250MHz
270mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
RN1961(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: 6-TSSOP, SC-88, SOT-363
재고7,568
100mA
50V
4.7k
4.7k
30 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
DMC964070R
Panasonic Electronic Components

TRANS PREBIAS DUAL NPN SSMINI6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMini6-F3-B
패키지: SOT-563, SOT-666
재고3,264
100mA
50V
22k
-
160 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
125mW
Surface Mount
SOT-563, SOT-666
SSMini6-F3-B
DMG963020R
Panasonic Electronic Components

TRANS PREBIAS NPN/PNP SSMINI5

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-665
  • Supplier Device Package: SSMini5-F4-B
패키지: SOT-665
재고3,104
100mA
50V
22k
22k
60 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
125mW
Surface Mount
SOT-665
SSMini5-F4-B
DMG214010R
Panasonic Electronic Components

TRANS PNP PREBIAS/NPN 0.3W MINI6

  • Transistor Type: 1 PNP Pre-Biased, 1 NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): -
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V / 210 @ 2mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA / 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 500nA, 100µA
  • Frequency - Transition: 150MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: Mini6-G4-B
패키지: SOT-23-6
재고2,976
100mA
50V
-
4.7k
20 @ 5mA, 10V / 210 @ 2mA, 10V
250mV @ 500µA, 10mA / 300mV @ 10mA, 100mA
500nA, 100µA
150MHz
300mW
Surface Mount
SOT-23-6
Mini6-G4-B
DMA561050R
Panasonic Electronic Components

TRANS PREBIAS DUAL PNP SMINI5

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 5-SMD, Flat Leads
  • Supplier Device Package: SMini5-F3-B
패키지: 5-SMD, Flat Leads
재고3,088
100mA
50V
10k
-
160 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
150mW
Surface Mount
5-SMD, Flat Leads
SMini5-F3-B
DMC266040R
Panasonic Electronic Components

TRANS PREBIAS DUAL NPN MINI6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: Mini6-G4-B
패키지: SOT-23-6
재고5,664
100mA
50V
10k
47k
80 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
300mW
Surface Mount
SOT-23-6
Mini6-G4-B
RN2903,LF
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: 6-TSSOP, SC-88, SOT-363
재고52,122
100mA
50V
22k
22k
70 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
RN2911,LF
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: 6-TSSOP, SC-88, SOT-363
재고98,616
100mA
50V
10k
-
120 @ 1mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SMUN5237DW1T1G
ON Semiconductor

TRANS 2NPN PREBIAS 0.187W SOT363

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 187mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고86,580
100mA
50V
47k
22k
80 @ 5mA, 10V
250mV @ 5mA, 10mA
500nA
-
187mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
PBLS2002D,115
Nexperia USA Inc.

TRANS NPN PREBIAS/PNP 0.6W 6TSOP

  • Transistor Type: 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 100mA, 1A
  • Voltage - Collector Emitter Breakdown (Max): 50V, 20V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 220 @ 500mA, 2V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 280mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 1µA, 100nA
  • Frequency - Transition: 185MHz
  • Power - Max: 600mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
패키지: SC-74, SOT-457
재고28,140
100mA, 1A
50V, 20V
4.7k
4.7k
30 @ 10mA, 5V / 220 @ 500mA, 2V
150mV @ 500µA, 10mA / 280mV @ 100mA, 1A
1µA, 100nA
185MHz
600mW
Surface Mount
SC-74, SOT-457
6-TSOP
DMC564000R
Panasonic Electronic Components

TRANS PREBIAS DUAL NPN SMINI6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: SMini6-F3-B
패키지: 6-SMD, Flat Leads
재고53,580
100mA
50V
47k
-
160 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
150mW
Surface Mount
6-SMD, Flat Leads
SMini6-F3-B
DMC2640L0R
Panasonic Electronic Components

TRANS PREBIAS DUAL NPN MINI6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: Mini6-G4-B
패키지: SOT-23-6
재고28,278
100mA
50V
4.7k
4.7k
20 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
300mW
Surface Mount
SOT-23-6
Mini6-G4-B
hot EMG8T2R
Rohm Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT5

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package: EMT5
패키지: 6-SMD (5 Leads), Flat Lead
재고1,251,060
100mA
50V
4.7k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
150mW
Surface Mount
6-SMD (5 Leads), Flat Lead
EMT5
PIMP31PAX
Nexperia USA Inc.

PIMP31PA/SOT1118/HUSON6

  • Transistor Type: 2 PNP Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 150MHz
  • Power - Max: 360mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: 6-HUSON (2x2)
패키지: -
재고9,000
500mA
50V
1kOhms
10kOhms
70 @ 50mA, 5V
100mV @ 2.5mA, 50mA
500nA
150MHz
360mW
Surface Mount
6-UFDFN Exposed Pad
6-HUSON (2x2)
DDA143TUQ-13-F
Diodes Incorporated

PREBIAS TRANSISTOR SOT363 T&R 10

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: -
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100mA
50V
4.7kOhms
-
160 @ 1mA, 5V
300mV @ 250µA, 2.5mA
500nA (ICBO)
250MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
PUMH9-QH
Nexperia USA Inc.

TRANS PREBIAS 2NPN 50V 6TSSOP

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA
  • Frequency - Transition: 230MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: -
Request a Quote
100mA
50V
10kOhms
47kOhms
100 @ 5mA, 5V
100mV @ 250µA, 5mA
100nA
230MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
RN1708JE-TE85L-F
Toshiba Semiconductor and Storage

NPN X 2 BRT Q1BSR=22KOHM Q1BER=4

  • Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
패키지: -
재고270
100mA
50V
22kOhms
47kOhms
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
100mW
Surface Mount
SOT-553
ESV
RN2705-LF
Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR2.2KOHM Q1BER47KO

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
패키지: -
재고7,896
100mA
50V
2.2kOhms
47kOhms
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200MHz
200mW
Surface Mount
5-TSSOP, SC-70-5, SOT-353
USV
PUMB2-DG-B4X
Nexperia USA Inc.

TRANS PREBIAS 2PNP 50V 6TSSOP

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 180MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: -
Request a Quote
100mA
50V
47kOhms
47kOhms
80 @ 5mA, 5V
150mV @ 500µA, 10mA
1µA
180MHz
300mW
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
RN4908-LF-CT
Toshiba Semiconductor and Storage

PNP + NPN BRT Q1BSR10KOHM Q1BER4

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz, 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: -
재고9,000
100mA
50V
22kOhms
47kOhms
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200MHz, 250MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
PUMD13-QF
Nexperia USA Inc.

PUMD13-Q/SOT363/SC-88

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 230MHz, 180MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: -
Request a Quote
100mA
50V
4.7kOhms
47kOhms
100 @ 10mA, 5V
100mV @ 250µA, 5mA
1µA
230MHz, 180MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP