페이지 60 - 트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드 | 이산 소자 반도체 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com 86-755-83210559 x831
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드

기록 2,060
페이지  60/74
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Resistor - Base (R1) (Ohms)
Resistor - Emitter Base (R2) (Ohms)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
Frequency - Transition
Power - Max
Mounting Type
Package / Case
Supplier Device Package
hot NSBA123JDXV6T1G
ON Semiconductor

TRANS 2PNP PREBIAS 0.5W SOT563

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: SOT-563, SOT-666
재고480,000
100mA
50V
2.2k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
-
500mW
Surface Mount
SOT-563, SOT-666
SOT-563
NSBA123EDXV6T1G
ON Semiconductor

TRANS 2PNP PREBIAS 0.5W SOT563

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: SOT-563, SOT-666
재고3,664
100mA
50V
2.2k
2.2k
8 @ 5mA, 10V
250mV @ 5mA, 10mA
500nA
-
500mW
Surface Mount
SOT-563, SOT-666
SOT-563
NSTB60BDW1T1
ON Semiconductor

TRANS NPN PREBIAS/PNP SOT363

  • Transistor Type: 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 140MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고6,416
150mA
50V
22k
47k
80 @ 5mA, 10V / 120 @ 5mA, 10V
250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
500nA
140MHz
250mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
PBLS4001V,115
NXP

TRANS NPN PREBIAS/PNP SOT666

  • Transistor Type: 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V, 40V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V / 150 @ 100mA, 2V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 300MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
패키지: SOT-563, SOT-666
재고5,504
100mA, 500mA
50V, 40V
2.2k
2.2k
30 @ 20mA, 5V / 150 @ 100mA, 2V
150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
1µA
300MHz
300mW
Surface Mount
SOT-563, SOT-666
SOT-666
NSBC114YPDP6T5G
ON Semiconductor

TRANS NPN/PNP PREBIAS SOT963

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 339mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
패키지: SOT-963
재고3,424
100mA
50V
10k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
-
339mW
Surface Mount
SOT-963
SOT-963
NSBC144EDP6T5G
ON Semiconductor

TRANS 2NPN PREBIAS 0.339W SOT963

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 339mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
패키지: SOT-963
재고7,872
100mA
50V
47k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
-
339mW
Surface Mount
SOT-963
SOT-963
NSVMUN5314DW1T3G
ON Semiconductor

TRANS NPN/PNP 50V BIPO SC88-6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고4,240
100mA
50V
10k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
-
250mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
PEMH19,115
Nexperia USA Inc.

TRANS 2NPN PREBIAS 0.3W SOT666

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
패키지: SOT-563, SOT-666
재고6,896
100mA
50V
22k
-
100 @ 1mA, 5V
150mV @ 500µA, 10mA
1µA
-
300mW
Surface Mount
SOT-563, SOT-666
SOT-666
PEMH1,115
Nexperia USA Inc.

TRANS 2NPN PREBIAS 0.3W SOT666

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
패키지: SOT-563, SOT-666
재고4,800
100mA
50V
22k
22k
60 @ 5mA, 5V
150mV @ 500µA, 10mA
1µA
-
300mW
Surface Mount
SOT-563, SOT-666
SOT-666
EMA4T2R
Rohm Semiconductor

TRANS 2PNP PREBIAS 0.15W EMT5

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package: EMT5
패키지: 6-SMD (5 Leads), Flat Lead
재고5,184
100mA
50V
10k
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
-
250MHz
150mW
Surface Mount
6-SMD (5 Leads), Flat Lead
EMT5
DDA124EU-7-F
Diodes Incorporated

TRANS 2PNP PREBIAS 0.2W SOT363

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고4,784
100mA
50V
22k
22k
56 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
RN2961(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: 6-TSSOP, SC-88, SOT-363
재고4,144
100mA
50V
4.7k
4.7k
30 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
RN2505TE85LF
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SMV

  • Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
패키지: SC-74A, SOT-753
재고6,128
100mA
50V
2.2k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
200MHz
300mW
Surface Mount
SC-74A, SOT-753
SMV
PBLS4002D,115
Nexperia USA Inc.

TRANS NPN PREBIAS/PNP 0.6W 6TSOP

  • Transistor Type: 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 100mA, 700mA
  • Voltage - Collector Emitter Breakdown (Max): 50V, 40V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 300 @ 100mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 310mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 1µA, 100nA
  • Frequency - Transition: 150MHz
  • Power - Max: 600mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
패키지: SC-74, SOT-457
재고5,616
100mA, 700mA
50V, 40V
4.7k
4.7k
30 @ 10mA, 5V / 300 @ 100mA, 5V
150mV @ 500µA, 10mA / 310mV @ 100mA, 1A
1µA, 100nA
150MHz
600mW
Surface Mount
SC-74, SOT-457
6-TSOP
hot IMH11AT110
Rohm Semiconductor

TRANS PREBIAS DUAL NPN SMT6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SMT6
패키지: SC-74, SOT-457
재고793,200
100mA
50V
10k
10k
30 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
300mW
Surface Mount
SC-74, SOT-457
SMT6
DMC564050R
Panasonic Electronic Components

TRANS PREBIAS DUAL NPN SMINI6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: SMini6-F3-B
패키지: 6-SMD, Flat Leads
재고3,728
100mA
50V
10k
-
160 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
150mW
Surface Mount
6-SMD, Flat Leads
SMini6-F3-B
RN1606(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.3W SM6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6
패키지: SC-74, SOT-457
재고5,136
100mA
50V
4.7k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
100nA (ICBO)
250MHz
300mW
Surface Mount
SC-74, SOT-457
SM6
RN1906,LF
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: 6-TSSOP, SC-88, SOT-363
재고28,842
100mA
50V
4.7k
47k
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
250MHz
200mW
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
PQMD12Z
Nexperia USA Inc.

TRANS NPN/PNP PREBIAS 0.35W 6DFN

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 230MHz, 180MHz
  • Power - Max: 350mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1010B-6
패키지: 6-XFDFN Exposed Pad
재고89,358
100mA
50V
47k
47k
80 @ 5mA, 5V
150mV @ 500µA, 10mA
100nA (ICBO)
230MHz, 180MHz
350mW
Surface Mount
6-XFDFN Exposed Pad
DFN1010B-6
hot EMD5T2R
Rohm Semiconductor

TRANS NPN/PNP PREBIAS 0.15W EMT6

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k, 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k, 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
패키지: SOT-563, SOT-666
재고672,000
100mA
50V
47k, 4.7k
47k, 10k
68 @ 5mA, 5V / 30 @ 10mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
150mW
Surface Mount
SOT-563, SOT-666
EMT6
DMA564050R
Panasonic Electronic Components

TRANS PREBIAS DUAL PNP SMINI6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: SMini6-F3-B
패키지: 6-SMD, Flat Leads
재고46,488
100mA
50V
10k
-
160 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
150mW
Surface Mount
6-SMD, Flat Leads
SMini6-F3-B
NHUMB13F
Nexperia USA Inc.

TRANS PREBIAS 2PNP 80V 6TSSOP

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA
  • Frequency - Transition: 150MHz
  • Power - Max: 350mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: -
재고59,700
100mA
80V
4.7kOhms
47kOhms
100 @ 10mA, 5V
100mV @ 500µA, 10mA
100nA
150MHz
350mW
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
UMD15N-TP
Micro Commercial Co

TRANS PREBIAS 1NPN 1PNP 50V

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: -
Request a Quote
100mA
50V
4.7kOhms
4.7kOhms
20 @ 10mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
150mW
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
UMF25NTR
Rohm Semiconductor

LINEAR IC

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Resistor - Base (R1) (Ohms): -
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: -
  • Power - Max: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
RN2701-LF
Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
패키지: -
Request a Quote
100mA
50V
4.7kOhms
4.7kOhms
30 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200MHz
200mW
Surface Mount
5-TSSOP, SC-70-5, SOT-353
USV
RN2708-LF
Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR10KOHM Q1BER47KOH

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
패키지: -
재고9,000
100mA
50V
22kOhms
47kOhms
80 @ 10mA, 5V
300mV @ 250µA, 5mA
500nA
200MHz
200mW
Surface Mount
5-TSSOP, SC-70-5, SOT-353
USV
EMF5XV6T1G
onsemi

TRANS PREBIAS 1NPN 1PNP SOT563

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V, 12V
  • Resistor - Base (R1) (Ohms): 47kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 270 @ 10mA, 2V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 500nA, 100nA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 357mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: -
Request a Quote
100mA, 500mA
50V, 12V
47kOhms
-
80 @ 5mA, 10V / 270 @ 10mA, 2V
250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA
500nA, 100nA (ICBO)
-
357mW
Surface Mount
SOT-563, SOT-666
SOT-563
EMD4DXV6T5
onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 357mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: -
Request a Quote
100mA
50V
47kOhms
47kOhms
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
-
357mW
Surface Mount
SOT-563, SOT-666
SOT-563