페이지 40 - 트랜지스터 - 양극(BJT) - 어레이 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - 양극(BJT) - 어레이

기록 2,013
페이지  40/72
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2N2640
Central Semiconductor Corp

TRANS 2NPN 30MA 45V TO78-6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10µA, 5V
  • Power - Max: 600mW
  • Frequency - Transition: 40MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
패키지: TO-78-6 Metal Can
재고4,656
30mA
45V
-
-
50 @ 10µA, 5V
600mW
40MHz
-
Through Hole
TO-78-6 Metal Can
TO-78-6
BC847BPDXV6T5G
ON Semiconductor

TRANS NPN/PNP 45V 0.1A SOT563

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: SOT-563, SOT-666
재고2,816
100mA
45V
600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
500mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot SLA4052
Sanken

TRANS 9NPN DARL 120V 3A 21SIP

  • Transistor Type: 9 NPN Darlington
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 21-SIP, Exposed Tab
  • Supplier Device Package: 21-SIP
패키지: 21-SIP, Exposed Tab
재고5,872
3A
120V
-
-
-
-
-
150°C (TJ)
Through Hole
21-SIP, Exposed Tab
21-SIP
hot SLA4061
Sanken

TRANS 4NPN DARL 120V 5A 12SIP

  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V
  • Power - Max: 5W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 12-SIP, Exposed Tab
  • Supplier Device Package: 12-SIP
패키지: 12-SIP, Exposed Tab
재고29,028
5A
120V
1.5V @ 3mA, 3A
10µA (ICBO)
2000 @ 3A, 2V
5W
-
150°C (TJ)
Through Hole
12-SIP, Exposed Tab
12-SIP
NSS60100DMTTBG
ON Semiconductor

TRANS 2PNP 60V 1A

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
  • Power - Max: 2.27W
  • Frequency - Transition: 155MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-WDFN (2x2)
패키지: 6-WDFN Exposed Pad
재고6,816
1A
60V
300mV @ 100mA, 1A
100nA (ICBO)
120 @ 500mA, 2V
2.27W
155MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-WDFN (2x2)
CPH5541-TL-E
ON Semiconductor

TRANS NPN/PNP 40V/30V 0.7A 5CPH

  • Transistor Type: NPN, PNP (Emitter Coupled)
  • Current - Collector (Ic) (Max): 700mA
  • Voltage - Collector Emitter Breakdown (Max): 40V, 30V
  • Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
  • Power - Max: 600mW
  • Frequency - Transition: 540MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: 5-CPH
패키지: SC-74A, SOT-753
재고2,208
700mA
40V, 30V
190mV @ 10mA, 200mA
100nA (ICBO)
300 @ 50mA, 2V
600mW
540MHz
150°C (TJ)
Surface Mount
SC-74A, SOT-753
5-CPH
NSM4002MR6T1G
ON Semiconductor

TRANS 2NPN 40V/45V SC74

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 200mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max): 40V, 45V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V / 250 @ 100mA, 1V
  • Power - Max: 500mW
  • Frequency - Transition: 300MHz, 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SC-74
패키지: SC-74, SOT-457
재고7,840
200mA, 500mA
40V, 45V
300mV @ 5mA, 50mA / 700mV @ 50mA, 500mA
100nA (ICBO)
100 @ 10mA, 1V / 250 @ 100mA, 1V
500mW
300MHz, 100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-74, SOT-457
SC-74
hot FMB2227A
Fairchild/ON Semiconductor

TRANS NPN/PNP 30V 0.5A 6SSOT

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 30nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
  • Power - Max: 700mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-SSOT
패키지: SOT-23-6 Thin, TSOT-23-6
재고6,456
500mA
30V
1.4V @ 30mA, 300mA
30nA (ICBO)
30 @ 300mA, 10V
700mW
250MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-SSOT
hot MMDT3946-7-F
Diodes Incorporated

TRANS NPN/PNP 40V 0.2A SOT363

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 200mW
  • Frequency - Transition: 300MHz, 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고4,114,284
200mA
40V
300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
200mW
300MHz, 250MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot ULN2802A
STMicroelectronics

TRANS 8NPN DARL 50V 0.5A 18DIP

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: 2.25W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 18-DIP (0.300", 7.62mm)
  • Supplier Device Package: 18-DIP
패키지: 18-DIP (0.300", 7.62mm)
재고215,388
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
2.25W
-
-20°C ~ 150°C (TJ)
Through Hole
18-DIP (0.300", 7.62mm)
18-DIP
PBSS4160PANPSX
Nexperia USA Inc.

TRANS NPN/PNP 60V 1A 6HUSON

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA / 340mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
  • Power - Max: 370mW
  • Frequency - Transition: 175MHz, 125MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020D-6
패키지: 6-UDFN Exposed Pad
재고5,952
1A
60V
120mV @ 50mA, 500mA / 340mV @ 100mA, 1A
100nA (ICBO)
150 @ 500mA, 2V / 120 @ 500mA, 2V
370mW
175MHz, 125MHz
150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020D-6
PBSS4160DSH
Nexperia USA Inc.

TRANS 2NPN 60V 0.87A SC-74

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 870mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
  • Power - Max: 290mW
  • Frequency - Transition: 220MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SOT-457
패키지: SC-74, SOT-457
재고3,440
870mA
60V
250mV @ 100mA, 1A
100nA (ICBO)
200 @ 500mA, 5V
290mW
220MHz
150°C (TJ)
Surface Mount
SC-74, SOT-457
SOT-457
hot UP0459800L
Panasonic Electronic Components

TRANS 2NPN 20V/50V SSMINI6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 15mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max): 20V, 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V / 160 @ 2mA, 10V
  • Power - Max: 125mW
  • Frequency - Transition: 650MHz, 150MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMINI6-F1
패키지: SOT-563, SOT-666
재고36,696
15mA, 100mA
20V, 50V
300mV @ 10mA, 100mA
100µA
65 @ 1mA, 6V / 160 @ 2mA, 10V
125mW
650MHz, 150MHz
125°C (TJ)
Surface Mount
SOT-563, SOT-666
SSMINI6-F1
CMLT5087E TR
Central Semiconductor Corp

TRANS 2PNP 50V 0.1A SOT-563

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: SOT-563, SOT-666
재고7,280
100mA
50V
400mV @ 10mA, 100mA
50nA (ICBO)
300 @ 100µA, 5V
350mW
100MHz
-65°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot MPQ3762
Central Semiconductor Corp

TRANS 4PNP 40V

  • Transistor Type: 4 PNP (Quad)
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 3W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: TO-116
패키지: 14-DIP (0.300", 7.62mm)
재고11,760
-
40V
-
100nA (ICBO)
-
3W
150MHz
-
Through Hole
14-DIP (0.300", 7.62mm)
TO-116
hot UMX2NTR
Rohm Semiconductor

TRANS 2NPN 50V 0.15A 6UMT

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
패키지: 6-TSSOP, SC-88, SOT-363
재고4,323,480
150mA
50V
400mV @ 5mA, 50mA
100nA (ICBO)
120 @ 1mA, 6V
150mW
180MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
hot NST3904DXV6T1G
ON Semiconductor

TRANS 2NPN 40V 0.2A SOT563

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 500mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: SOT-563, SOT-666
재고73,896
200mA
40V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
500mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
ECH8504-TL-H
onsemi

BIP PNP+PNP 3A 100V

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JANTXV2N5795A
Microchip Technology

PNP TRANSISTOR

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
패키지: -
Request a Quote
600mA
60V
1.6V @ 50mA, 500mA
10µA (ICBO)
40 @ 150mA, 10V
600mW
-
-65°C ~ 175°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
JANTXV2N5796U
Microchip Technology

PNP TRANSISTOR

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: 6-SMD
패키지: -
Request a Quote
600mA
60V
1.6V @ 50mA, 500mA
10µA (ICBO)
100 @ 150mA, 10V
600mW
-
-65°C ~ 175°C (TJ)
Surface Mount
6-SMD, No Lead
6-SMD
CMLT5087EM-TR-PBFREE
Central Semiconductor Corp

TRANS 2PNP 50V 0.1A SOT-563

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: -
Request a Quote
100mA
50V
400mV @ 10mA, 100mA
50nA (ICBO)
300 @ 100µA, 5V
350mW
100MHz
-65°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
BC846BSHF
Nexperia USA Inc.

TRANS 2NPN 65V 0.1A 6TSSOP

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 270mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: -
Request a Quote
100mA
65V
300mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
270mW
100MHz
175°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
JANKCA2N2919
Microchip Technology

TRANSISTOR DUAL SMALL-SIGNAL BJT

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
패키지: -
Request a Quote
50mA
60V
300mV @ 100µA, 1mA
10µA (ICBO)
150 @ 1mA, 5V
350mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
ULS2075H-883
Allegro MicroSystems

QUAD DARLINGTON SWITCHES

  • Transistor Type: 4 PNP Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.75V @ 2mA, 1.25A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 2.2W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-CERDIP
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1.5A
50V
1.75V @ 2mA, 1.25A
500µA
-
2.2W
-
-55°C ~ 125°C (TA)
Through Hole
16-CDIP (0.300", 7.62mm)
16-CERDIP
SG2803DW
Microchip Technology

DRIVER - MEDIUM CURRENT ARRAY, H

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 18-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 18-SOIC
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500mA
50V
1.6V @ 500µA, 350mA
-
-
-
-
0°C ~ 70°C (TA)
Surface Mount
18-SOIC (0.295", 7.50mm Width)
18-SOIC
BC856BDW1T3
onsemi

TRANS PNP DUAL 65V 100MA SOT-363

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 380mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
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100mA
65V
650mV @ 5mA, 100mA
-
220 @ 2mA, 5V
380mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
BC846BS-TPQ2
Micro Commercial Co

Interface

  • Transistor Type: 2 NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
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100mA
65V
300mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
200mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
BCM857BSH-QF
Nexperia USA Inc.

BCM857BSH-QF

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 270mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
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100mA
45V
300mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
270mW
100MHz
175°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP