페이지 54 - 트랜지스터 - 양극(BJT) - 어레이 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2N4937	Central Semiconductor Corp	TRANSISTOR DUAL TO78 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: TO-78-6 Metal Can	재고4,992	-	-	-	-	-	-	-	-	Through Hole	TO-78-6 Metal Can	TO-78-6
MAT03FHZ	Analog Devices Inc.	TRANS 2PNP 36V 0.02A TO78-6 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 36V Vce Saturation (Max) @ Ib, Ic: 100mV @ 100µA, 1mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 500mW Frequency - Transition: 190MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: TO-78-6 Metal Can	재고7,136	20mA	36V	100mV @ 100µA, 1mA	-	-	500mW	190MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
EMT1DXV6T5	ON Semiconductor	TRANS 2PNP 60V 0.1A SOT563 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 500mW Frequency - Transition: 140MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고4,000	100mA	60V	500mV @ 5mA, 50mA	500nA (ICBO)	120 @ 1mA, 6V	500mW	140MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
ZDT6702TC	Diodes Incorporated	TRANS NPN/PNP DARL 60V 1.75A SM8 Transistor Type: NPN, PNP Darlington (Dual) Current - Collector (Ic) (Max): 1.75A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.28V @ 2mA, 1.75A Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 500mA, 5V / 2000 @ 500mA, 5V Power - Max: 2.75W Frequency - Transition: 140MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SM8	패키지: SOT-223-8	재고7,136	1.75A	60V	1.28V @ 2mA, 1.75A	500nA	5000 @ 500mA, 5V / 2000 @ 500mA, 5V	2.75W	140MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SM8
BCM856SH6433XTMA1	Infineon Technologies	TRANS 2PNP 65V 0.1A SOT363 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	패키지: 6-VSSOP, SC-88, SOT-363	재고7,184	100mA	65V	650mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	250mW	250MHz	150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
2N2919U	Microsemi Corporation	TRANS 2NPN 60V 0.03A Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-SMD	패키지: 3-SMD, No Lead	재고3,472	30mA	60V	300mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	200°C (TJ)	Surface Mount	3-SMD, No Lead	3-SMD
SLA4036	Sanken	TRANS 120V 2A 12SIP Transistor Type: - Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 15-SIP Supplier Device Package: 15-SIP	패키지: 15-SIP	재고5,376	2A	120V	-	-	-	-	-	150°C (TJ)	Through Hole	15-SIP	15-SIP
ZXTD2090E6TA	Diodes Incorporated	TRANS 2NPN 50V 1A SOT23-6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V Power - Max: 1.1W Frequency - Transition: 215MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	패키지: SOT-23-6	재고46,500	1A	50V	270mV @ 50mA, 1A	10nA (ICBO)	75 @ 1A, 2V	1.1W	215MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
NSS40301MDR2G	ON Semiconductor	TRANS 2NPN 40V 3A 8SOIC Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Power - Max: 653mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고1,306,656	3A	40V	115mV @ 200mA, 2A	100nA (ICBO)	180 @ 1A, 2V	653mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
PEMZ1,115	Nexperia USA Inc.	TRANS NPN/PNP 40V 0.1A SOT666 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	패키지: SOT-563, SOT-666	재고3,200	100mA	40V	200mV @ 5mA, 50mA	100nA (ICBO)	120 @ 1mA, 6V	300mW	100MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-666
BC847BV,315	Nexperia USA Inc.	TRANS 2NPN 45V 0.1A SOT666 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	패키지: SOT-563, SOT-666	재고6,624	100mA	45V	300mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	300mW	100MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-666
ZHB6790TA	Diodes Incorporated	TRANS 2NPN/2PNP 40V 2A SOT223 Transistor Type: 2 NPN, 2 PNP (H-Bridge) Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Power - Max: 1.25W Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SOT-223	패키지: SOT-223-8	재고15,312	2A	40V	750mV @ 50mA, 2A	100nA (ICBO)	200 @ 1A, 2V	1.25W	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SOT-223
EMZ1T2R	Rohm Semiconductor	TRANS NPN/PNP 50V 0.15A 6EMT Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 150mW Frequency - Transition: 180MHz, 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: SOT-563, SOT-666	재고1,752,180	150mA	50V	400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA	100nA (ICBO)	120 @ 1mA, 6V	150mW	180MHz, 140MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
UMX18NTN	Rohm Semiconductor	TRANS 2NPN 12V 0.5A 6UMT Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Power - Max: 150mW Frequency - Transition: 320MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	패키지: 6-TSSOP, SC-88, SOT-363	재고113,160	500mA	12V	250mV @ 10mA, 200mA	100nA (ICBO)	270 @ 10mA, 2V	150mW	320MHz	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
ZXTD619MCTA	Diodes Incorporated	TRANS 2NPN 50V 4A 8DFN Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Power - Max: 1.7W Frequency - Transition: 165MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN (3x2)	패키지: 8-WDFN Exposed Pad	재고34,800	4A	50V	320mV @ 200mA, 4A	100nA	100 @ 2A, 2V	1.7W	165MHz	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-DFN (3x2)
STD830CP40	STMicroelectronics	TRANS NPN/PNP 400V 3A 8DIP Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 700mA, 5V Power - Max: 3W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	패키지: 8-DIP (0.300", 7.62mm)	재고179,640	3A	400V	500mV @ 200mA, 1A	100µA	18 @ 700mA, 5V	3W	-	150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
DMC206010R	Panasonic Electronic Components	TRANS 2NPN 50V 0.1A MINI6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V Power - Max: 300mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: Mini6-G4-B	패키지: SOT-23-6	재고611,286	100mA	50V	300mV @ 10mA, 100mA	100µA	210 @ 2mA, 10V	300mW	150MHz	150°C (TJ)	Surface Mount	SOT-23-6	Mini6-G4-B
MPQ3798-PBFREE	Central Semiconductor Corp	TRANS 4PNP 40V 0.05A Transistor Type: 4 PNP (Quad) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 10mA, 5V Power - Max: 500mW Frequency - Transition: 60MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: TO-116	패키지: -	Request a Quote	50mA	40V	250mV @ 100µA, 1mA	10nA (ICBO)	125 @ 10mA, 5V	500mW	60MHz	-65°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	TO-116
MNS2N3810U-TR	Microchip Technology	DUAL SMALL-SIGNAL BJT Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Power - Max: 350mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: -	Request a Quote	50mA	60V	250mV @ 100µA, 1mA	10µA (ICBO)	150 @ 1mA, 5V	350mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
BC846BSHX	Nexperia USA Inc.	TRANS 2NPN 65V 0.1A 6TSSOP Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 270mW Frequency - Transition: 100MHz Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: -	Request a Quote	100mA	65V	300mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	270mW	100MHz	175°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
ZXTP56060FDBQ-7	Diodes Incorporated	SS LOW SAT TRANSISTOR U-DFN2020- Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 100mA, 2V Power - Max: 510mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6	패키지: -	재고17,100	2A	60V	450mV @ 200mA, 2A	100nA (ICBO)	170 @ 100mA, 2V	510mW	-	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6
BC817BPN	Diotec Semiconductor	IC Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 300mW Frequency - Transition: 100MHz, 80MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SOT-26	패키지: -	Request a Quote	500mA	45V	700mV @ 50mA, 500mA	100nA (ICBO)	160 @ 100mA, 1V	300mW	100MHz, 80MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SOT-26
DXTN3C100PDQ-13	Diodes Incorporated	SS Low Sat Transistor PowerDI506 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V Power - Max: 1.47W Frequency - Transition: 130MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	패키지: -	재고4,443	3A	100V	330mV @ 300mA, 3A	100nA	150 @ 500mA, 10V	1.47W	130MHz	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
JAN2N4854	Microchip Technology	NPN TRANSISTOR Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 600mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: -	Request a Quote	600mA	40V	400mV @ 15mA, 150mA	10µA (ICBO)	100 @ 150mA, 10V	600mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
VT6T12T2R	Rohm Semiconductor	TRANS GP BJT PNP 50V 0.1A 6-PIN Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 150mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: VMT6	패키지: -	재고23,625	100mA	50V	400mV @ 5mA, 50mA	100nA (ICBO)	120 @ 1mA, 6V	150mW	300MHz	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	VMT6
JANTX2N2060	Microchip Technology	NPN TRANSISTOR Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Power - Max: 600mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: -	Request a Quote	500mA	60V	300mV @ 5mA, 50mA	10µA (ICBO)	50 @ 10mA, 5V	600mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
ZXTC6717MCQTA	Diodes Incorporated	SS LOW SAT TRANSISTOR U-DFN3020- Transistor Type: 1 NPN, 1 PNP Complementary Current - Collector (Ic) (Max): 4.5A, 4A Voltage - Collector Emitter Breakdown (Max): 15V, 12V Vce Saturation (Max) @ Ib, Ic: 310mV @ 50mA, 4.5A / 310mV @ 150mA, 4A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V / 300 @ 100mA, 2V Power - Max: 1.13W Frequency - Transition: 120MHz, 110MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: W-DFN3020-8	패키지: -	Request a Quote	4.5A, 4A	15V, 12V	310mV @ 50mA, 4.5A / 310mV @ 150mA, 4A	100nA	300 @ 200mA, 2V / 300 @ 100mA, 2V	1.13W	120MHz, 110MHz	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	W-DFN3020-8
BCM847BSH-QF	Nexperia USA Inc.	BCM847BSH-QF Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 200mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: -	Request a Quote	100mA	45V	400mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	200mW	250MHz	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP

2N4937

Central Semiconductor Corp

TRANSISTOR DUAL TO78

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

재고4,992

-

Through Hole

TO-78-6 Metal Can

TO-78-6

MAT03FHZ

Analog Devices Inc.

TRANS 2PNP 36V 0.02A TO78-6

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 36V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 100µA, 1mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 500mW
Frequency - Transition: 190MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: TO-78-6 Metal Can

재고7,136

20mA

36V

100mV @ 100µA, 1mA

-

500mW

190MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

EMT1DXV6T5

ON Semiconductor

TRANS 2PNP 60V 0.1A SOT563

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 500mW
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고4,000

100mA

60V

500mV @ 5mA, 50mA

500nA (ICBO)

120 @ 1mA, 6V

500mW

140MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

ZDT6702TC

Diodes Incorporated

TRANS NPN/PNP DARL 60V 1.75A SM8

Transistor Type: NPN, PNP Darlington (Dual)
Current - Collector (Ic) (Max): 1.75A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.28V @ 2mA, 1.75A
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 500mA, 5V / 2000 @ 500mA, 5V
Power - Max: 2.75W
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8

패키지: SOT-223-8

재고7,136

1.75A

60V

1.28V @ 2mA, 1.75A

500nA

5000 @ 500mA, 5V / 2000 @ 500mA, 5V

2.75W

140MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223-8

SM8

BCM856SH6433XTMA1

Infineon Technologies

TRANS 2PNP 65V 0.1A SOT363

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

패키지: 6-VSSOP, SC-88, SOT-363

재고7,184

100mA

65V

650mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

250mW

250MHz

150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

2N2919U

Microsemi Corporation

TRANS 2NPN 60V 0.03A

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-SMD

패키지: 3-SMD, No Lead

재고3,472

30mA

60V

300mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

200°C (TJ)

Surface Mount

3-SMD, No Lead

3-SMD

SLA4036

Sanken

TRANS 120V 2A 12SIP

Transistor Type: -
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 15-SIP
Supplier Device Package: 15-SIP

패키지: 15-SIP

재고5,376

2A

120V

-

150°C (TJ)

Through Hole

15-SIP

ZXTD2090E6TA

Diodes Incorporated

TRANS 2NPN 50V 1A SOT23-6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Power - Max: 1.1W
Frequency - Transition: 215MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

패키지: SOT-23-6

재고46,500

1A

50V

270mV @ 50mA, 1A

10nA (ICBO)

75 @ 1A, 2V

1.1W

215MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-26

NSS40301MDR2G

ON Semiconductor

TRANS 2NPN 40V 3A 8SOIC

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Power - Max: 653mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고1,306,656

3A

40V

115mV @ 200mA, 2A

100nA (ICBO)

180 @ 1A, 2V

653mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

PEMZ1,115

Nexperia USA Inc.

TRANS NPN/PNP 40V 0.1A SOT666

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666

패키지: SOT-563, SOT-666

재고3,200

100mA

40V

200mV @ 5mA, 50mA

100nA (ICBO)

120 @ 1mA, 6V

300mW

100MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-666

BC847BV,315

Nexperia USA Inc.

TRANS 2NPN 45V 0.1A SOT666

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666

패키지: SOT-563, SOT-666

재고6,624

100mA

45V

300mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

300mW

100MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-666

ZHB6790TA

Diodes Incorporated

TRANS 2NPN/2PNP 40V 2A SOT223

Transistor Type: 2 NPN, 2 PNP (H-Bridge)
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Power - Max: 1.25W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SOT-223

패키지: SOT-223-8

재고15,312

2A

40V

750mV @ 50mA, 2A

100nA (ICBO)

200 @ 1A, 2V

1.25W

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223-8

SOT-223

EMZ1T2R

Rohm Semiconductor

TRANS NPN/PNP 50V 0.15A 6EMT

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 180MHz, 140MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: SOT-563, SOT-666

재고1,752,180

150mA

50V

400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

100nA (ICBO)

120 @ 1mA, 6V

150mW

180MHz, 140MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

EMT6

UMX18NTN

Rohm Semiconductor

TRANS 2NPN 12V 0.5A 6UMT

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Power - Max: 150mW
Frequency - Transition: 320MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

패키지: 6-TSSOP, SC-88, SOT-363

재고113,160

500mA

12V

250mV @ 10mA, 200mA

100nA (ICBO)

270 @ 10mA, 2V

150mW

320MHz

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

ZXTD619MCTA

Diodes Incorporated

TRANS 2NPN 50V 4A 8DFN

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Power - Max: 1.7W
Frequency - Transition: 165MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-DFN (3x2)

패키지: 8-WDFN Exposed Pad

재고34,800

4A

50V

320mV @ 200mA, 4A

100nA

100 @ 2A, 2V

1.7W

165MHz

-55°C ~ 150°C (TJ)

Surface Mount

8-WDFN Exposed Pad

8-DFN (3x2)

STD830CP40

STMicroelectronics

TRANS NPN/PNP 400V 3A 8DIP

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 700mA, 5V
Power - Max: 3W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

패키지: 8-DIP (0.300", 7.62mm)

재고179,640

3A

400V

500mV @ 200mA, 1A

100µA

18 @ 700mA, 5V

3W

-

150°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-DIP

DMC206010R

Panasonic Electronic Components

TRANS 2NPN 50V 0.1A MINI6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Power - Max: 300mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: Mini6-G4-B

패키지: SOT-23-6

재고611,286

100mA

50V

300mV @ 10mA, 100mA

100µA

210 @ 2mA, 10V

300mW

150MHz

150°C (TJ)

Surface Mount

SOT-23-6

Mini6-G4-B

MPQ3798-PBFREE

Central Semiconductor Corp

TRANS 4PNP 40V 0.05A

Transistor Type: 4 PNP (Quad)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 10mA, 5V
Power - Max: 500mW
Frequency - Transition: 60MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: TO-116

패키지: -

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50mA

40V

250mV @ 100µA, 1mA

10nA (ICBO)

125 @ 10mA, 5V

500mW

60MHz

-65°C ~ 150°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

TO-116

MNS2N3810U-TR

Microchip Technology

DUAL SMALL-SIGNAL BJT

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: -

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50mA

60V

250mV @ 100µA, 1mA

10µA (ICBO)

150 @ 1mA, 5V

350mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

BC846BSHX

Nexperia USA Inc.

TRANS 2NPN 65V 0.1A 6TSSOP

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 270mW
Frequency - Transition: 100MHz
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

패키지: -

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100mA

65V

300mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

270mW

100MHz

175°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

ZXTP56060FDBQ-7

Diodes Incorporated

SS LOW SAT TRANSISTOR U-DFN2020-

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 100mA, 2V
Power - Max: 510mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6

패키지: -

재고17,100

2A

60V

450mV @ 200mA, 2A

100nA (ICBO)

170 @ 100mA, 2V

510mW

-

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6

BC817BPN

Diotec Semiconductor

IC

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 300mW
Frequency - Transition: 100MHz, 80MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SOT-26

패키지: -

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500mA

45V

700mV @ 50mA, 500mA

100nA (ICBO)

160 @ 100mA, 1V

300mW

100MHz, 80MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SOT-26

DXTN3C100PDQ-13

Diodes Incorporated

SS Low Sat Transistor PowerDI506

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
Power - Max: 1.47W
Frequency - Transition: 130MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

패키지: -

재고4,443

3A

100V

330mV @ 300mA, 3A

100nA

150 @ 500mA, 10V

1.47W

130MHz

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type UXD)

JAN2N4854

Microchip Technology

NPN TRANSISTOR

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 600mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: -

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600mA

40V

400mV @ 15mA, 150mA

10µA (ICBO)

100 @ 150mA, 10V

600mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

VT6T12T2R

Rohm Semiconductor

TRANS GP BJT PNP 50V 0.1A 6-PIN

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: VMT6

패키지: -

재고23,625

100mA

50V

400mV @ 5mA, 50mA

100nA (ICBO)

120 @ 1mA, 6V

150mW

300MHz

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

VMT6

JANTX2N2060

Microchip Technology

NPN TRANSISTOR

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Power - Max: 600mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: -

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500mA

60V

300mV @ 5mA, 50mA

10µA (ICBO)

50 @ 10mA, 5V

600mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

ZXTC6717MCQTA

Diodes Incorporated

SS LOW SAT TRANSISTOR U-DFN3020-

Transistor Type: 1 NPN, 1 PNP Complementary
Current - Collector (Ic) (Max): 4.5A, 4A
Voltage - Collector Emitter Breakdown (Max): 15V, 12V
Vce Saturation (Max) @ Ib, Ic: 310mV @ 50mA, 4.5A / 310mV @ 150mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V / 300 @ 100mA, 2V
Power - Max: 1.13W
Frequency - Transition: 120MHz, 110MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: W-DFN3020-8

패키지: -

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4.5A, 4A

15V, 12V

310mV @ 50mA, 4.5A / 310mV @ 150mA, 4A

100nA

300 @ 200mA, 2V / 300 @ 100mA, 2V

1.13W

120MHz, 110MHz

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

W-DFN3020-8

BCM847BSH-QF

Nexperia USA Inc.

BCM847BSH-QF

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

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100mA

45V

400mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

200mW

250MHz

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP