페이지 60 - 트랜지스터 - 양극(BJT) - 단일, 프리 바이어스드 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
BCR183E6359HTMA1	Infineon Technologies	TRANS PREBIAS PNP SOT23 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고6,816	100mA	50V	10k	10k	30 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
DDTC113TKA-7-F	Diodes Incorporated	TRANS PREBIAS NPN 200MW SC59-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59-3	패키지: TO-236-3, SC-59, SOT-23-3	재고7,200	100mA	50V	1k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	500nA (ICBO)	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59-3
PDTB123EUX	Nexperia USA Inc.	TRANS PREBIAS PNP 0.425W Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 140MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고6,576	500mA	50V	2.2k	2.2k	40 @ 50mA, 5V	100mV @ 2.5mA, 50mA	500nA	140MHz	300mW	Surface Mount	SC-70, SOT-323	SOT-323-3
SMUN5235T1G	ON Semiconductor	TRANS PREBIAS NPN 202MW SC70-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 202mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 (SOT323)	패키지: SC-70, SOT-323	재고3,632	100mA	50V	2.2k	47k	80 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	202mW	Surface Mount	SC-70, SOT-323	SC-70-3 (SOT323)
DTA124EM3T5G	ON Semiconductor	TRANS PREBIAS PNP 260MW SOT723 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 260mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SOT-723	패키지: SOT-723	재고6,720	100mA	50V	22k	22k	60 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	260mW	Surface Mount	SOT-723	SOT-723
PDTA123JT,215	Nexperia USA Inc.	TRANS PREBIAS PNP 250MW TO236AB Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고5,680	100mA	50V	2.2k	47k	100 @ 10mA, 5V	100mV @ 250µA, 5mA	100nA (ICBO)	-	250mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
RN1104T5LFT	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.1W SSM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	패키지: SC-75, SOT-416	재고5,776	100mA	50V	47k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	100mW	Surface Mount	SC-75, SOT-416	SSM
DDTA122TU-7-F	Diodes Incorporated	TRANS PREBIAS PNP 200MW SOT323 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 220 Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고25,182	100mA	50V	220	-	100 @ 1mA, 5V	300mV @ 250µA, 5mA	500nA (ICBO)	200MHz	200mW	Surface Mount	SC-70, SOT-323	SOT-323
DRA3144V0L	Panasonic Electronic Components	TRANS PREBIAS PNP 100MW SSSMINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SSSMini3-F2-B	패키지: SOT-723	재고4,048	100mA	50V	47k	10k	30 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	100mW	Surface Mount	SOT-723	SSSMini3-F2-B
DTD143TKT146	Rohm Semiconductor	TRANS PREBIAS NPN 200MW SMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 40V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	패키지: TO-236-3, SC-59, SOT-23-3	재고2,224	500mA	40V	4.7k	-	100 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA (ICBO)	200MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
DDTC122LE-7-F	Diodes Incorporated	TRANS PREBIAS NPN 150MW SOT523 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 220 Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	패키지: SOT-523	재고2,432	100mA	50V	220	10k	56 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz	150mW	Surface Mount	SOT-523	SOT-523
DDTA123YUA-7	Diodes Incorporated	TRANS PREBIAS PNP 200MW SOT323 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고3,120	100mA	50V	2.2k	10k	33 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	200mW	Surface Mount	SC-70, SOT-323	SOT-323
DDTA123TUA-7-F	Diodes Incorporated	TRANS PREBIAS PNP 200MW SOT323 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고4,752	100mA	50V	2.2k	-	100 @ 1mA, 5V	300mV @ 500µA, 5mA	500nA (ICBO)	250MHz	200mW	Surface Mount	SC-70, SOT-323	SOT-323
UNR9114J0L	Panasonic Electronic Components	TRANS PREBIAS PNP 125MW SSMINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F1	패키지: SC-89, SOT-490	재고28,476	100mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	125mW	Surface Mount	SC-89, SOT-490	SSMini3-F1
DDTA115GCA-7	Diodes Incorporated	TRANS PREBIAS PNP 200MW SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): 100k DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고24,882	100mA	50V	-	100k	82 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA (ICBO)	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
DDTC143ZUA-7	Diodes Incorporated	TRANS PREBIAS NPN 200MW SOT323 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고28,440	100mA	50V	4.7k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	200mW	Surface Mount	SC-70, SOT-323	SOT-323
DDTA123ECA-7-F	Diodes Incorporated	TRANS PREBIAS PNP 200MW SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고52,566	100mA	50V	2.2k	2.2k	20 @ 20mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
NTE2357	NTE Electronics, Inc	TRANS PREBIAS NPN 50V TO92S Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 300 mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Supplier Device Package: TO-92S	패키지: -	Request a Quote	100 mA	50 V	22 kOhms	22 kOhms	50 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	300 mW	Through Hole	TO-226-3, TO-92-3 Short Body	TO-92S
TDTA123J-LM	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 320 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	재고8,910	100 mA	50 V	2.2 kOhms	-	80 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	320 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
RN2113-LF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SSM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	패키지: -	재고9,000	100 mA	50 V	47 kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200 MHz	100 mW	Surface Mount	SC-75, SOT-416	SSM
DTD113ZCHZGT116	Rohm Semiconductor	TRANS PREBIAS NPN 0.5A SST3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 1 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): - Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	패키지: -	재고102,246	500 mA	-	1 kOhms	10 kOhms	82 @ 50mA, 5V	300mV @ 2.5mA, 50mA	-	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
RN1315-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SC70 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	패키지: -	재고8,250	100 mA	50 V	2.2 kOhms	10 kOhms	50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	100 mW	Surface Mount	SC-70, SOT-323	SC-70
PDTA123JQCZ	Nexperia USA Inc.	TRANS PREBIAS PNP 50V 0.1A 3DFN Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 180 MHz Power - Max: 360 mW Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1412D-3	패키지: -	재고15,000	100 mA	50 V	47 kOhms	47 kOhms	100 @ 10mA, 5V	100mV @ 250µA, 5mA	100nA	180 MHz	360 mW	Surface Mount, Wettable Flank	3-XDFN Exposed Pad	DFN1412D-3
DTC143XEBHZGTL	Rohm Semiconductor	TRANS PREBIAS NPN 0.1A EMT3F Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: EMT3F (SOT-416FL)	패키지: -	재고177	100 mA	-	4.7 kOhms	10 kOhms	30 @ 10mA, 5V	300mV @ 500µA, 10mA	-	250 MHz	150 mW	Surface Mount	SC-89, SOT-490	EMT3F (SOT-416FL)
DTC123EUA-TP	Micro Commercial Co	TRANS PREBIAS NPN 50V SOT323 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: -	재고18,000	100 mA	50 V	2.2 kOhms	2.2 kOhms	20 @ 20mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	SOT-323
DTC123ECA-TP	Micro Commercial Co	TRANS PREBIAS NPN 50V SOT23 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote	100 mA	50 V	2.2 kOhms	2.2 kOhms	20 @ 20mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
PDTC144EU-QX	Nexperia USA Inc.	TRANS PREBIAS NPN 50V SOT323 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 230 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: -	Request a Quote	100 mA	50 V	47 kOhms	47 kOhms	80 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	230 MHz	200 mW	Surface Mount	SC-70, SOT-323	SOT-323
DTA113ZE3HZGTL	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A EMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 1 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	패키지: -	재고8,970	100 mA	50 V	1 kOhms	10 kOhms	33 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3

BCR183E6359HTMA1

Infineon Technologies

TRANS PREBIAS PNP SOT23

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고6,816

100mA

50V

10k

30 @ 5mA, 5V

300mV @ 500µA, 10mA

100nA (ICBO)

200MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

DDTC113TKA-7-F

Diodes Incorporated

TRANS PREBIAS NPN 200MW SC59-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59-3

패키지: TO-236-3, SC-59, SOT-23-3

재고7,200

100mA

50V

1k

-

100 @ 1mA, 5V

300mV @ 1mA, 10mA

500nA (ICBO)

250MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59-3

PDTB123EUX

Nexperia USA Inc.

TRANS PREBIAS PNP 0.425W

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 140MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고6,576

500mA

50V

2.2k

40 @ 50mA, 5V

100mV @ 2.5mA, 50mA

500nA

140MHz

300mW

Surface Mount

SC-70, SOT-323

SOT-323-3

SMUN5235T1G

ON Semiconductor

TRANS PREBIAS NPN 202MW SC70-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 202mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)

패키지: SC-70, SOT-323

재고3,632

100mA

50V

2.2k

47k

80 @ 5mA, 10V

250mV @ 1mA, 10mA

500nA

-

202mW

Surface Mount

SC-70, SOT-323

SC-70-3 (SOT323)

DTA124EM3T5G

ON Semiconductor

TRANS PREBIAS PNP 260MW SOT723

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 260mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SOT-723

패키지: SOT-723

재고6,720

100mA

50V

22k

60 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

260mW

Surface Mount

SOT-723

PDTA123JT,215

Nexperia USA Inc.

TRANS PREBIAS PNP 250MW TO236AB

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: -
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고5,680

100mA

50V

2.2k

47k

100 @ 10mA, 5V

100mV @ 250µA, 5mA

100nA (ICBO)

-

250mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

RN1104T5LFT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

패키지: SC-75, SOT-416

재고5,776

100mA

50V

47k

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

100mW

Surface Mount

SC-75, SOT-416

SSM

DDTA122TU-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT323

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 220
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고25,182

100mA

50V

220

-

100 @ 1mA, 5V

300mV @ 250µA, 5mA

500nA (ICBO)

200MHz

200mW

Surface Mount

SC-70, SOT-323

SOT-323

DRA3144V0L

Panasonic Electronic Components

TRANS PREBIAS PNP 100MW SSSMINI3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F2-B

패키지: SOT-723

재고4,048

100mA

50V

47k

10k

30 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

100mW

Surface Mount

SOT-723

SSSMini3-F2-B

DTD143TKT146

Rohm Semiconductor

TRANS PREBIAS NPN 200MW SMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

패키지: TO-236-3, SC-59, SOT-23-3

재고2,224

500mA

40V

4.7k

-

100 @ 50mA, 5V

300mV @ 2.5mA, 50mA

500nA (ICBO)

200MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

DDTC122LE-7-F

Diodes Incorporated

TRANS PREBIAS NPN 150MW SOT523

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 220
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

패키지: SOT-523

재고2,432

100mA

50V

220

10k

56 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz

150mW

Surface Mount

SOT-523

DDTA123YUA-7

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT323

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고3,120

100mA

50V

2.2k

10k

33 @ 10mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

200mW

Surface Mount

SC-70, SOT-323

SOT-323

DDTA123TUA-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT323

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고4,752

100mA

50V

2.2k

-

100 @ 1mA, 5V

300mV @ 500µA, 5mA

500nA (ICBO)

250MHz

200mW

Surface Mount

SC-70, SOT-323

SOT-323

UNR9114J0L

Panasonic Electronic Components

TRANS PREBIAS PNP 125MW SSMINI3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F1

패키지: SC-89, SOT-490

재고28,476

100mA

50V

10k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

80MHz

125mW

Surface Mount

SC-89, SOT-490

SSMini3-F1

DDTA115GCA-7

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): 100k
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고24,882

100mA

50V

-

100k

82 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA (ICBO)

250MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

DDTC143ZUA-7

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT323

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고28,440

100mA

50V

4.7k

47k

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

200mW

Surface Mount

SC-70, SOT-323

SOT-323

DDTA123ECA-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고52,566

100mA

50V

2.2k

20 @ 20mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

NTE2357

NTE Electronics, Inc

TRANS PREBIAS NPN 50V TO92S

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 300 mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S

패키지: -

Request a Quote

100 mA

50 V

22 kOhms

50 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

300 mW

Through Hole

TO-226-3, TO-92-3 Short Body

TO-92S

TDTA123J-LM

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 320 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

재고8,910

100 mA

50 V

2.2 kOhms

-

80 @ 10mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

320 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

RN2113-LF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

패키지: -

재고9,000

100 mA

50 V

47 kOhms

-

120 @ 1mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

200 MHz

100 mW

Surface Mount

SC-75, SOT-416

SSM

DTD113ZCHZGT116

Rohm Semiconductor

TRANS PREBIAS NPN 0.5A SST3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 1 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

패키지: -

재고102,246

500 mA

-

1 kOhms

10 kOhms

82 @ 50mA, 5V

300mV @ 2.5mA, 50mA

-

200 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

RN1315-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

패키지: -

재고8,250

100 mA

50 V

2.2 kOhms

10 kOhms

50 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250 MHz

100 mW

Surface Mount

SC-70, SOT-323

SC-70

PDTA123JQCZ

Nexperia USA Inc.

TRANS PREBIAS PNP 50V 0.1A 3DFN

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1412D-3

패키지: -

재고15,000

100 mA

50 V

47 kOhms

100 @ 10mA, 5V

100mV @ 250µA, 5mA

100nA

180 MHz

360 mW

Surface Mount, Wettable Flank

3-XDFN Exposed Pad

DFN1412D-3

DTC143XEBHZGTL

Rohm Semiconductor

TRANS PREBIAS NPN 0.1A EMT3F

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: EMT3F (SOT-416FL)

패키지: -

재고177

100 mA

-

4.7 kOhms

10 kOhms

30 @ 10mA, 5V

300mV @ 500µA, 10mA

-

250 MHz

150 mW

Surface Mount

SC-89, SOT-490

EMT3F (SOT-416FL)

DTC123EUA-TP

Micro Commercial Co

TRANS PREBIAS NPN 50V SOT323

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: -

재고18,000

100 mA

50 V

2.2 kOhms

20 @ 20mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

200 mW

Surface Mount

SC-70, SOT-323

SOT-323

DTC123ECA-TP

Micro Commercial Co

TRANS PREBIAS NPN 50V SOT23

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

Request a Quote

100 mA

50 V

2.2 kOhms

20 @ 20mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

PDTC144EU-QX

Nexperia USA Inc.

TRANS PREBIAS NPN 50V SOT323

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 230 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: -

Request a Quote

100 mA

50 V

47 kOhms

80 @ 5mA, 5V

150mV @ 500µA, 10mA

1µA

230 MHz

200 mW

Surface Mount

SC-70, SOT-323

SOT-323

DTA113ZE3HZGTL

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A EMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 1 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

패키지: -

재고8,970

100 mA

50 V

1 kOhms

10 kOhms

33 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

150 mW

Surface Mount

SC-75, SOT-416

EMT3