페이지 103 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - 양극(BJT) - 단일

기록 20,307
페이지  103/726
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BC857BWE6327BTSA1
Infineon Technologies

TRANS PNP 45V 0.1A SOT-323

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
패키지: SC-70, SOT-323
재고5,312
100mA
45V
650mV @ 5mA, 100mA
15nA (ICBO)
220 @ 2mA, 5V
250mW
250MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
BC849CWE6327HTSA1
Infineon Technologies

TRANS NPN 30V 0.1A SOT-323

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
패키지: SC-70, SOT-323
재고7,648
100mA
30V
600mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
250mW
250MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
hot ZTX1149A
Diodes Incorporated

TRANS PNP 25V 3A E-LINE

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 70mA, 3A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 135MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3
  • Supplier Device Package: E-Line (TO-92 compatible)
패키지: E-Line-3
재고19,584
3A
25V
300mV @ 70mA, 3A
100nA
250 @ 500mA, 2V
1W
135MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
MPSA13ZL1G
ON Semiconductor

TRANS NPN DARL 30V 0.5A TO-92

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 125MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고6,912
500mA
30V
1.5V @ 100µA, 100mA
100nA (ICBO)
10000 @ 100mA, 5V
625mW
125MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
TN6729A_D27Z
Fairchild/ON Semiconductor

TRANS PNP 80V 1A TO-226

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Supplier Device Package: TO-226
패키지: TO-226-3, TO-92-3 Long Body (Formed Leads)
재고6,448
1A
80V
500mV @ 10mA, 250mA
100nA (ICBO)
50 @ 250mA, 1V
1W
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body (Formed Leads)
TO-226
BC546B,116
NXP

TRANS NPN 65V 0.1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고6,080
100mA
65V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
500mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
2N3906T93
Rohm Semiconductor

TRANS PNP 40V 0.2A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고2,960
200mA
40V
400mV @ 5mA, 50mA
50nA
100 @ 10mA, 1V
625mW
250MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92
2SD16400Q
Panasonic Electronic Components

TRANS NPN DARL 100V 2A TO-126

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 10V
  • Power - Max: 1.2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126B-A1
패키지: TO-225AA, TO-126-3
재고2,992
2A
100V
1.5V @ 1mA, 1A
100nA (ICBO)
4000 @ 1A, 10V
1.2W
-
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126B-A1
CP736V-2N5401-CT
Central Semiconductor Corp

TRANS PNP 150V 600MA CHIP FORM

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: -
  • Frequency - Transition: 300MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고5,200
600mA
150V
500mV @ 5mA, 50mA
50nA (ICBO)
60 @ 10mA, 5V
-
300MHz
-65°C ~ 150°C (TJ)
Surface Mount
Die
Die
JANTXV2N3507L
Microsemi Corporation

TRANS NPN 50V 3A TO5

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
패키지: TO-205AA, TO-5-3 Metal Can
재고3,920
3A
50V
1.5V @ 250mA, 2.5A
-
30 @ 1.5A, 2V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5
MMBTA42-TP
Micro Commercial Co

TRANS NPN 300V 0.3A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
  • Power - Max: 300mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
패키지: TO-236-3, SC-59, SOT-23-3
재고7,040
300mA
300V
500mV @ 2mA, 20mA
100nA (ICBO)
40 @ 30mA, 10V
300mW
50MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot 2SB1197KT146R
Rohm Semiconductor

TRANS PNP 32V 0.8A SOT-346

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 32V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
  • Power - Max: 200mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3
패키지: TO-236-3, SC-59, SOT-23-3
재고5,899,032
800mA
32V
500mV @ 50mA, 500mA
500nA (ICBO)
120 @ 100mA, 3V
200mW
200MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3
hot ST13009
STMicroelectronics

TRANS NPN 400V 12A TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 12A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3A, 12A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 8A, 5V
  • Power - Max: 100W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고6,288
12A
400V
2.5V @ 3A, 12A
-
10 @ 8A, 5V
100W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot FCX1053ATA
Diodes Incorporated

TRANS NPN 75V 3A SOT-89

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Vce Saturation (Max) @ Ib, Ic: 440mV @ 200mA, 4.5A
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
  • Power - Max: 2W
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
패키지: TO-243AA
재고293,700
3A
75V
440mV @ 200mA, 4.5A
10nA
300 @ 500mA, 2V
2W
140MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
hot ZXTN2010A
Diodes Incorporated

TRANS NPN 60V 4.5A TO92-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4.5A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
  • Power - Max: 1W
  • Frequency - Transition: 130MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 Short Body (Formed Leads)
재고383,040
4.5A
60V
210mV @ 200mA, 5A
50nA (ICBO)
100 @ 2A, 1V
1W
130MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Short Body (Formed Leads)
TO-92-3
BC556BTFR
Fairchild/ON Semiconductor

TRANS PNP 65V 0.1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고4,256
100mA
65V
650mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
500mW
150MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PBSS5240Y,115
Nexperia USA Inc.

TRANS PNP 40V 2A 6TSSOP

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V
  • Power - Max: 430mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: 6-TSSOP, SC-88, SOT-363
재고23,532
2A
40V
350mV @ 200mA, 2A
100nA (ICBO)
210 @ 1A, 2V
430mW
100MHz
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
hot TIP31CG
ON Semiconductor

TRANS NPN 100V 3A TO220AB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 300µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
  • Power - Max: 2W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고152,856
3A
100V
1.2V @ 375mA, 3A
300µA
10 @ 3A, 4V
2W
3MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
2N3904-PBFREE
Central Semiconductor Corp

TRANS NPN 40V TO92-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: -
  • Frequency - Transition: 300MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: -
Request a Quote
-
40 V
-
50nA (ICBO)
100 @ 10mA, 1V
-
300MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
JAN2N930UB
Microchip Technology

TRANS NPN 45V 0.03A UB

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 30 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UB
패키지: -
Request a Quote
30 mA
45 V
-
-
-
-
-
200°C (TJ)
Surface Mount
4-SMD, No Lead
UB
2SAR502U3T106
Rohm Semiconductor

TRANS PNP 30V 0.5A UMT3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 200nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
  • Power - Max: 200 mW
  • Frequency - Transition: 520MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: UMT3
패키지: -
재고39,723
500 mA
30 V
400mV @ 10mA, 200mA
200nA (ICBO)
200 @ 100mA, 2V
200 mW
520MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
UMT3
2N4070
Microchip Technology

POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 65 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AD (TO-3)
패키지: -
Request a Quote
10 A
100 V
-
-
-
65 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-204AD (TO-3)
2N5077
General Semiconductor

TRANS 250V 3A TO59

  • Transistor Type: -
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 250 V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 3A
  • Current - Collector Cutoff (Max): 250nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 500mA, 5V
  • Power - Max: 40 W
  • Frequency - Transition: 40MHz
  • Operating Temperature: -
  • Mounting Type: Stud Mount
  • Package / Case: TO-210AA, TO-59-3, Stud
  • Supplier Device Package: TO-59
패키지: -
Request a Quote
3 A
250 V
2V @ 300mA, 3A
250nA (ICBO)
90 @ 500mA, 5V
40 W
40MHz
-
Stud Mount
TO-210AA, TO-59-3, Stud
TO-59
PBHV9040Z-QX
Nexperia USA Inc.

PBHV9040Z-Q/SOT223/SC-73

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 250 mA
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 20mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 700 mW
  • Frequency - Transition: 55MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
패키지: -
재고3,000
250 mA
400 V
200mV @ 20mA, 100mA
100nA
100 @ 50mA, 10V
700 mW
55MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
2N3507L
Microchip Technology

NPN POWER SILICON TRANSISTORS

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 500mA, 1V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
패키지: -
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3 A
50 V
1.5V @ 250mA, 2.5A
1µA
35 @ 500mA, 1V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
2N3417-PBFREE
Central Semiconductor Corp

TRANS NPN 50V TO92-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: -
재고1,683
-
50 V
-
100nA (ICBO)
180 @ 2mA, 4.5V
-
-
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BC857AM3-TP
Micro Commercial Co

Interface

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 265 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: SOT-723
패키지: -
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100 mA
50 V
650mV @ 5mA, 100mA
1mA
110 @ 2mA, 5V
265 mW
100MHz
-55°C ~ 150°C
Surface Mount
SOT-723
SOT-723
DCX55-13
Diodes Incorporated

TRANS NPN 60V 1A SOT89-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
패키지: -
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1 A
60 V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
1 W
200MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3