페이지 163 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BDV64A	Central Semiconductor Corp	POWER TRANSISTOR PNP TO218 Transistor Type: PNP Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 125W Frequency - Transition: 60MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: TO-218	패키지: TO-218-3	재고4,640	12A	80V	-	-	1000 @ 5A, 4V	125W	60MHz	-	Through Hole	TO-218-3	TO-218
BC328_J35Z	Fairchild/ON Semiconductor	TRANS PNP 25V 0.8A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고7,968	800mA	25V	700mV @ 50mA, 500mA	100nA	100 @ 100mA, 1V	625mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MMBTA92LT3	ON Semiconductor	TRANS PNP 300V 0.5A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V Power - Max: 300mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고60,000	500mA	300V	500mV @ 2mA, 20mA	250nA (ICBO)	25 @ 30mA, 10V	300mW	50MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
BD437	ON Semiconductor	TRANS NPN 45V 4A TO-225AA Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 800mV @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Power - Max: 36W Frequency - Transition: 3MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-225AA	패키지: TO-225AA, TO-126-3	재고789,456	4A	45V	800mV @ 300mA, 3A	100µA (ICBO)	85 @ 500mA, 1V	36W	3MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-225AA
KSA473O	Fairchild/ON Semiconductor	TRANS PNP 30V 3A TO-220 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 10W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고6,352	3A	30V	800mV @ 200mA, 2A	1µA (ICBO)	70 @ 500mA, 2V	10W	100MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
KSC2316OBU	Fairchild/ON Semiconductor	TRANS NPN 120V 0.8A TO-92L Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 Long Body	재고7,840	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92-3
MJF3055	ON Semiconductor	TRANS NPN 90V 10A TO220FP Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 90V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.3A, 10A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Power - Max: 2W Frequency - Transition: 2MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP	패키지: TO-220-3 Full Pack	재고3,536	10A	90V	2.5V @ 3.3A, 10A	1µA	20 @ 4A, 4V	2W	2MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FP
BCW66KGE6327HTSA1	Infineon Technologies	TRANS NPN 45V 0.8A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 500mW Frequency - Transition: 170MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고4,016	800mA	45V	450mV @ 50mA, 500mA	20nA (ICBO)	160 @ 100mA, 1V	500mW	170MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
STE07DE220	STMicroelectronics	TRANS NPN 2200V 7A ISOTOP Transistor Type: NPN - Emitter Switched Bipolar Current - Collector (Ic) (Max): 7A Voltage - Collector Emitter Breakdown (Max): 2200V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 220W Frequency - Transition: - Operating Temperature: 125°C (TJ) Mounting Type: Chassis Mount Package / Case: ISOTOP Supplier Device Package: ISOTOP?	패키지: ISOTOP	재고7,584	7A	2200V	-	-	-	220W	-	125°C (TJ)	Chassis Mount	ISOTOP	ISOTOP?
2N2222A	Microsemi Corporation	TRANS NPN 50V 0.8A TO-18 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	패키지: TO-206AA, TO-18-3 Metal Can	재고746,424	800mA	50V	1V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
2PC4081Q,135	Nexperia USA Inc.	TRANS NPN 50V 0.15A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고3,984	150mA	50V	400mV @ 5mA, 50mA	100nA (ICBO)	120 @ 1mA, 6V	200mW	100MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
BC807-40 RFG	TSC America Inc.	TRANSISTOR, PNP, -45V, -0.5A, 25 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고6,880	500mA	45V	700mV @ 50mA, 500mA	200nA (ICBO)	250 @ 100mA, 1V	300mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
PBSS5330X,135	Nexperia USA Inc.	TRANS PNP 30V 3A SOT89 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 320mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 175 @ 1A, 2V Power - Max: 1.6W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고3,584	3A	30V	320mV @ 300mA, 3A	100nA (ICBO)	175 @ 1A, 2V	1.6W	100MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
BUL742C	STMicroelectronics	TRANS NPN 400V 4A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3.5A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 800mA, 3V Power - Max: 70W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고1,172,952	4A	400V	1.5V @ 1A, 3.5A	250µA	25 @ 800mA, 3V	70W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
PHPT60603PYX	Nexperia USA Inc.	TRANS PNP 60V 3A LFPAK Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 225mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V Power - Max: 1.25W Frequency - Transition: 110MHz Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Supplier Device Package: LFPAK56, Power-SO8	패키지: SC-100, SOT-669	재고7,456	3A	60V	225mV @ 50mA, 1A	100nA (ICBO)	150 @ 500mA, 2V	1.25W	110MHz	175°C (TJ)	Surface Mount	SC-100, SOT-669	LFPAK56, Power-SO8
JANS2N3019	Microsemi Corporation	TRANS NPN 80V 1A TO-5 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Power - Max: 800mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	패키지: TO-205AA, TO-5-3 Metal Can	재고17,856	1A	80V	500mV @ 50mA, 500mA	10µA (ICBO)	50 @ 500mA, 10V	800mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
ZXTN25012EFHTA	Diodes Incorporated	TRANS NPN 12V 6A SOT23-3 Transistor Type: NPN Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 190mV @ 120mA, 6A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V Power - Max: 1.25W Frequency - Transition: 260MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고466,356	6A	12V	190mV @ 120mA, 6A	50nA (ICBO)	500 @ 10mA, 2V	1.25W	260MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BCX41E6327HTSA1	Infineon Technologies	TRANS NPN 125V 0.8A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 125V Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V Power - Max: 330mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고103,344	800mA	125V	900mV @ 30mA, 300mA	10µA	40 @ 200mA, 1V	330mW	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
FX504-TL-E	onsemi	BIP NPN+NPN 3A 50V Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANSM2N5152L	Microchip Technology	RH POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	2 A	80 V	1.5V @ 500mA, 5A	50µA	30 @ 2.5A, 5V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2PD602ASL-QR	Nexperia USA Inc.	TRANS NPN 50V 0.5A TO236AB Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 150mA, 10V Power - Max: 250 mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	패키지: -	재고9,000	500 mA	50 V	600mV @ 30mA, 300mA	10nA (ICBO)	170 @ 150mA, 10V	250 mW	180MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB
BCX22-PBFREE	Central Semiconductor Corp	TRANS NPN 125V TO18 Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 125 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V Power - Max: - Frequency - Transition: 50MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	패키지: -	Request a Quote	-	125 V	-	100nA (ICBO)	40 @ 200mA, 1V	-	50MHz	-	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
JANTX2N5415UA	Microchip Technology	TRANS PNP 200V 1A UA Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 200 V Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Power - Max: 750 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	패키지: -	Request a Quote	1 A	200 V	2V @ 5mA, 50mA	50µA	30 @ 50mA, 10V	750 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UA
2N5968	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 220 W Frequency - Transition: - Operating Temperature: - Mounting Type: Stud Mount Package / Case: TO-211MB, TO-63-4, Stud Supplier Device Package: TO-63	패키지: -	Request a Quote	40 A	100 V	-	-	-	220 W	-	-	Stud Mount	TO-211MB, TO-63-4, Stud	TO-63
MPS2907-H-AP	Micro Commercial Co	TRANS PNP 40V 0.6A TO92 Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 150mA, 10V Power - Max: 625 mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	패키지: -	Request a Quote	600 mA	40 V	600mV @ 50mA, 500mA	100nA	200 @ 150mA, 10V	625 mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92
ZXTP01500BGQTA	Diodes Incorporated	PWRHIVOLTAGETRANSISTORSOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 500 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V Power - Max: 3 W Frequency - Transition: 60MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223-3	패키지: -	Request a Quote	150 mA	500 V	500mV @ 10mA, 50mA	100nA	100 @ 1mA, 10V	3 W	60MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223-3
FZT4403TA	Diodes Incorporated	TRANS PNP SW -40V -600MA SOT-223 Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 1.5 W Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223-3	패키지: -	Request a Quote	600 mA	40 V	750mV @ 50mA, 500mA	-	100 @ 150mA, 2V	1.5 W	200MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223-3
2SCR573D3FRATL	Rohm Semiconductor	TRANS NPN 50V 3A TO252 Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V Power - Max: 10 W Frequency - Transition: 320MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252	패키지: -	재고3,528	3 A	50 V	350mV @ 50mA, 1A	1µA (ICBO)	180 @ 100mA, 3V	10 W	320MHz	150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252

BDV64A

Central Semiconductor Corp

POWER TRANSISTOR PNP TO218

Transistor Type: PNP
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Power - Max: 125W
Frequency - Transition: 60MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: TO-218

패키지: TO-218-3

재고4,640

12A

80V

-

1000 @ 5A, 4V

125W

60MHz

-

Through Hole

TO-218-3

TO-218

BC328_J35Z

Fairchild/ON Semiconductor

TRANS PNP 25V 0.8A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고7,968

800mA

25V

700mV @ 50mA, 500mA

100nA

100 @ 100mA, 1V

625mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MMBTA92LT3

ON Semiconductor

TRANS PNP 300V 0.5A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Power - Max: 300mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고60,000

500mA

300V

500mV @ 2mA, 20mA

250nA (ICBO)

25 @ 30mA, 10V

300mW

50MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

BD437

ON Semiconductor

TRANS NPN 45V 4A TO-225AA

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Power - Max: 36W
Frequency - Transition: 3MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA

패키지: TO-225AA, TO-126-3

재고789,456

4A

45V

800mV @ 300mA, 3A

100µA (ICBO)

85 @ 500mA, 1V

36W

3MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-225AA

KSA473O

Fairchild/ON Semiconductor

TRANS PNP 30V 3A TO-220

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 10W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고6,352

3A

30V

800mV @ 200mA, 2A

1µA (ICBO)

70 @ 500mA, 2V

10W

100MHz

150°C (TJ)

Through Hole

TO-220-3

KSC2316OBU

Fairchild/ON Semiconductor

TRANS NPN 120V 0.8A TO-92L

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 900mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 Long Body

재고7,840

800mA

120V

1V @ 50mA, 500mA

100nA (ICBO)

80 @ 100mA, 5V

900mW

120MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92-3

MJF3055

ON Semiconductor

TRANS NPN 90V 10A TO220FP

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 90V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.3A, 10A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Power - Max: 2W
Frequency - Transition: 2MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP

패키지: TO-220-3 Full Pack

재고3,536

10A

90V

2.5V @ 3.3A, 10A

1µA

20 @ 4A, 4V

2W

2MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220FP

BCW66KGE6327HTSA1

Infineon Technologies

TRANS NPN 45V 0.8A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 500mW
Frequency - Transition: 170MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고4,016

800mA

45V

450mV @ 50mA, 500mA

20nA (ICBO)

160 @ 100mA, 1V

500mW

170MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

STE07DE220

STMicroelectronics

TRANS NPN 2200V 7A ISOTOP

Transistor Type: NPN - Emitter Switched Bipolar
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 2200V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 220W
Frequency - Transition: -
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Supplier Device Package: ISOTOP?

패키지: ISOTOP

재고7,584

7A

2200V

-

220W

-

125°C (TJ)

Chassis Mount

ISOTOP

ISOTOP?

2N2222A

Microsemi Corporation

TRANS NPN 50V 0.8A TO-18

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

패키지: TO-206AA, TO-18-3 Metal Can

재고746,424

800mA

50V

1V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

500mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

2PC4081Q,135

Nexperia USA Inc.

TRANS NPN 50V 0.15A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고3,984

150mA

50V

400mV @ 5mA, 50mA

100nA (ICBO)

120 @ 1mA, 6V

200mW

100MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

BC807-40 RFG

TSC America Inc.

TRANSISTOR, PNP, -45V, -0.5A, 25

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고6,880

500mA

45V

700mV @ 50mA, 500mA

200nA (ICBO)

250 @ 100mA, 1V

300mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

PBSS5330X,135

Nexperia USA Inc.

TRANS PNP 30V 3A SOT89

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 320mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 175 @ 1A, 2V
Power - Max: 1.6W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고3,584

3A

30V

320mV @ 300mA, 3A

100nA (ICBO)

175 @ 1A, 2V

1.6W

100MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

BUL742C

STMicroelectronics

TRANS NPN 400V 4A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3.5A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 800mA, 3V
Power - Max: 70W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고1,172,952

4A

400V

1.5V @ 1A, 3.5A

250µA

25 @ 800mA, 3V

70W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

PHPT60603PYX

Nexperia USA Inc.

TRANS PNP 60V 3A LFPAK

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 225mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Power - Max: 1.25W
Frequency - Transition: 110MHz
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8

패키지: SC-100, SOT-669

재고7,456

3A

60V

225mV @ 50mA, 1A

100nA (ICBO)

150 @ 500mA, 2V

1.25W

110MHz

175°C (TJ)

Surface Mount

SC-100, SOT-669

LFPAK56, Power-SO8

JANS2N3019

Microsemi Corporation

TRANS NPN 80V 1A TO-5

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Power - Max: 800mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5

패키지: TO-205AA, TO-5-3 Metal Can

재고17,856

1A

80V

500mV @ 50mA, 500mA

10µA (ICBO)

50 @ 500mA, 10V

800mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5

ZXTN25012EFHTA

Diodes Incorporated

TRANS NPN 12V 6A SOT23-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 190mV @ 120mA, 6A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Power - Max: 1.25W
Frequency - Transition: 260MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고466,356

6A

12V

190mV @ 120mA, 6A

50nA (ICBO)

500 @ 10mA, 2V

1.25W

260MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BCX41E6327HTSA1

Infineon Technologies

TRANS NPN 125V 0.8A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 125V
Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Power - Max: 330mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고103,344

800mA

125V

900mV @ 30mA, 300mA

10µA

40 @ 200mA, 1V

330mW

100MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

FX504-TL-E

onsemi

BIP NPN+NPN 3A 50V

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

JANSM2N5152L

Microchip Technology

RH POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

Request a Quote

2 A

80 V

1.5V @ 500mA, 5A

50µA

30 @ 2.5A, 5V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

2PD602ASL-QR

Nexperia USA Inc.

TRANS NPN 50V 0.5A TO236AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 150mA, 10V
Power - Max: 250 mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB

패키지: -

재고9,000

500 mA

50 V

600mV @ 30mA, 300mA

10nA (ICBO)

170 @ 150mA, 10V

250 mW

180MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB

BCX22-PBFREE

Central Semiconductor Corp

TRANS NPN 125V TO18

Transistor Type: NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 125 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Power - Max: -
Frequency - Transition: 50MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

패키지: -

Request a Quote

-

125 V

-

100nA (ICBO)

40 @ 200mA, 1V

-

50MHz

-

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

JANTX2N5415UA

Microchip Technology

TRANS PNP 200V 1A UA

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Power - Max: 750 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UA

패키지: -

Request a Quote

1 A

200 V

2V @ 5mA, 50mA

50µA

30 @ 50mA, 10V

750 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UA

2N5968

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 220 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Stud Mount
Package / Case: TO-211MB, TO-63-4, Stud
Supplier Device Package: TO-63

패키지: -

Request a Quote

40 A

100 V

-

220 W

-

Stud Mount

TO-211MB, TO-63-4, Stud

TO-63

MPS2907-H-AP

Micro Commercial Co

TRANS PNP 40V 0.6A TO92

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 150mA, 10V
Power - Max: 625 mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

패키지: -

Request a Quote

600 mA

40 V

600mV @ 50mA, 500mA

100nA

200 @ 150mA, 10V

625 mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92

ZXTP01500BGQTA

Diodes Incorporated

PWRHIVOLTAGETRANSISTORSOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Power - Max: 3 W
Frequency - Transition: 60MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3

패키지: -

Request a Quote

150 mA

500 V

500mV @ 10mA, 50mA

100nA

100 @ 1mA, 10V

3 W

60MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223-3

FZT4403TA

Diodes Incorporated

TRANS PNP SW -40V -600MA SOT-223

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 1.5 W
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3

패키지: -

Request a Quote

600 mA

40 V

750mV @ 50mA, 500mA

-

100 @ 150mA, 2V

1.5 W

200MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223-3

2SCR573D3FRATL

Rohm Semiconductor

TRANS NPN 50V 3A TO252

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
Power - Max: 10 W
Frequency - Transition: 320MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252

패키지: -

재고3,528

3 A

50 V

350mV @ 50mA, 1A

1µA (ICBO)

180 @ 100mA, 3V

10 W

320MHz

150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252