페이지 184 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559-827
Language Translation

* Please refer to the English Version as our Official Version.

트랜지스터 - 양극(BJT) - 단일

기록 20,307
페이지  184/726
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SB1457(TE6,F,M)
Toshiba Semiconductor and Storage

TRANS PNP 2A 100V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
패키지: TO-226-3, TO-92-3 Long Body
재고2,160
2A
100V
1.5V @ 1mA, 1A
10µA (ICBO)
2000 @ 1A, 2V
900mW
50MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
SE9300
Central Semiconductor Corp

TRANS NPN BIPOLAR TO220

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 150mA, 7.5A
  • Current - Collector Cutoff (Max): 200µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 7.5A, 3V
  • Power - Max: 70W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: TO-220-3
재고5,440
10A
60V
2.5V @ 150mA, 7.5A
200µA (ICBO)
100 @ 7.5A, 3V
70W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
hot MPS751G
ON Semiconductor

TRANS PNP 60V 2A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
  • Power - Max: 625mW
  • Frequency - Transition: 75MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고51,396
2A
60V
500mV @ 200mA, 2A
100nA (ICBO)
75 @ 1A, 2V
625mW
75MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot 2N5190
ON Semiconductor

TRANS NPN 40V 4A TO-225AA

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
  • Power - Max: 40W
  • Frequency - Transition: 2MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-225AA
패키지: TO-225AA, TO-126-3
재고12,288
4A
40V
1.4V @ 1A, 4A
1mA
25 @ 1.5A, 2V
40W
2MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-225AA
BC557,116
NXP

TRANS PNP 45V 0.1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고4,176
100mA
45V
650mV @ 5mA, 100mA
15nA (ICBO)
125 @ 2mA, 5V
500mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot BCX71G
Fairchild/ON Semiconductor

TRANS PNP 45V 0.1A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
  • Current - Collector Cutoff (Max): 20nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고2,023,944
100mA
45V
550mV @ 1.25mA, 50mA
20nA
120 @ 2mA, 5V
350mW
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
JANTX2N4150S
Microsemi Corporation

TRANS NPN 70V 10A TO-39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
패키지: TO-205AD, TO-39-3 Metal Can
재고7,120
10A
70V
2.5V @ 1A, 10A
10µA
40 @ 5A, 5V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
BUB323ZT4G
ON Semiconductor

TRANS NPN DARL 350V 10A D2PAK

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 350V
  • Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
  • Power - Max: 150W
  • Frequency - Transition: 2MHz
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고2,624
10A
350V
1.7V @ 250mA, 10A
100µA
500 @ 5A, 4.6V
150W
2MHz
-65°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
PBSS5250XZ
Nexperia USA Inc.

TRANS PNP 50V 2A SOT89-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 380mV @ 100mA, 2A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
  • Power - Max: 550mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
패키지: TO-243AA
재고3,968
2A
50V
380mV @ 100mA, 2A
100nA
200 @ 1A, 2V
550mW
100MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89-3
2STP535FP
STMicroelectronics

TRANS NPN DARL 180V 8A TO-220FP

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 8A
  • Voltage - Collector Emitter Breakdown (Max): 180V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
  • Power - Max: 37W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
패키지: TO-220-3 Full Pack
재고5,968
8A
180V
2.5V @ 80mA, 8A
50µA
1000 @ 3A, 4V
37W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
hot STN9260
STMicroelectronics

TRANS PNP 600V 0.5A SOT-223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 5V
  • Power - Max: 1.6W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
패키지: TO-261-4, TO-261AA
재고2,000
500mA
600V
1V @ 10mA, 100mA
10µA
50 @ 20mA, 5V
1.6W
-
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
BCP51-16,135
Nexperia USA Inc.

TRANS PNP 45V 1A SOT223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 145MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
패키지: TO-261-4, TO-261AA
재고5,696
1A
45V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
1W
145MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
hot BCP5410TA
Diodes Incorporated

TRANS NPN 45V 1A SOT223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 2W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
패키지: TO-261-4, TO-261AA
재고56,400
1A
45V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
2W
150MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
KSD1588YTU
Fairchild/ON Semiconductor

TRANS NPN 60V 7A TO-220F

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 7A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 1V
  • Power - Max: 2W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
패키지: TO-220-3 Full Pack
재고17,424
7A
60V
500mV @ 500mA, 5A
10µA (ICBO)
100 @ 3A, 1V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
CMPTA06 TR
Central Semiconductor Corp

TRANS NPN 80V 0.5A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 350mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
패키지: TO-236-3, SC-59, SOT-23-3
재고4,352
500mA
80V
250mV @ 10mA, 100mA
100nA
100 @ 100mA, 1V
350mW
100MHz
-65°C ~ 175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot 2N4403
Central Semiconductor Corp

TRANS PNP 40V 0.6A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 625mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고10,238,412
600mA
40V
750mV @ 50mA, 500mA
-
100 @ 150mA, 2V
625mW
200MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
hot MJE350G
ON Semiconductor

TRANS PNP 300V 0.5A TO225AA

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Power - Max: 20W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-225AA
패키지: TO-225AA, TO-126-3
재고1,040,616
500mA
300V
-
100µA (ICBO)
30 @ 50mA, 10V
20W
-
-65°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-225AA
BC847CW-DG-B4X
Nexperia USA Inc.

TRANS NPN 45V 0.1A SOT323

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 200 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
패키지: -
Request a Quote
100 mA
45 V
400mV @ 5mA, 100mA
15nA (ICBO)
420 @ 2mA, 5V
200 mW
100MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
2SA1162-Y-LXHF
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SMINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 200 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
패키지: -
재고53,166
150 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
200 mW
80MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
MMBT3416LT3
onsemi

TRANS NPN GP 25V 100MA SOT-23

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JANSL2N3635L
Microchip Technology

TRANS PNP 140V 1A TO5

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 140 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5AA
패키지: -
Request a Quote
1 A
140 V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5AA
MMSS8050-H-TPS01
Micro Commercial Co

Interface

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 25 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
  • Power - Max: 300 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
패키지: -
Request a Quote
1.5 A
25 V
500mV @ 80mA, 800mA
100nA
200 @ 100mA, 1V
300 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
NSVBCH807-40LT1G
onsemi

TRANS PNP 45V 0.5A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
  • Power - Max: 225 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
패키지: -
Request a Quote
500 mA
45 V
700mV @ 50mA, 500mA
100nA (ICBO)
250 @ 100mA, 1V
225 mW
100MHz
-55°C ~ 175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
2SA1248S
onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 700 mA
  • Voltage - Collector Emitter Breakdown (Max): 160 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 25mA, 250mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
  • Power - Max: 1 W
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
패키지: -
Request a Quote
700 mA
160 V
500mV @ 25mA, 250mA
1µA (ICBO)
140 @ 100mA, 5V
1 W
120MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
BCP51-10-QX
Nexperia USA Inc.

BCP51-10-Q/SOT223/SC-73

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
  • Power - Max: 650 mW
  • Frequency - Transition: 145MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
패키지: -
재고3,000
1 A
45 V
500mV @ 50mA, 500mA
100nA (ICBO)
63 @ 150mA, 2V
650 mW
145MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
2N6350
Microchip Technology

NPN TRANSISTOR

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 5V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AC, TO-33-4 Metal Can
  • Supplier Device Package: TO-33
패키지: -
Request a Quote
5 A
80 V
2.5V @ 10mA, 5A
1µA
2000 @ 5A, 5V
1 W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AC, TO-33-4 Metal Can
TO-33
2SA608G-SPA-AC
onsemi

BIP PNP 0.1A 30V

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2N5154S1
STMicroelectronics

RAD-HARD 80 V, 5 A NPN TRANSISTO

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
  • Power - Max: 35 W
  • Frequency - Transition: -
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-276AA
  • Supplier Device Package: SMD5
패키지: -
재고60
5 A
80 V
1.5V @ 500mA, 5A
1µA
70 @ 2.5A, 5V
35 W
-
200°C (TJ)
Surface Mount
TO-276AA
SMD5