페이지 271 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFN38H6327XTSA1	Infineon Technologies	TRANS NPN 300V 0.2A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V Power - Max: 1.5W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	패키지: TO-261-4, TO-261AA	재고4,896	200mA	300V	500mV @ 2mA, 20mA	100nA (ICBO)	30 @ 30mA, 10V	1.5W	70MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4
MJD2955-1G	ON Semiconductor	TRANS PNP 60V 10A IPAK Transistor Type: PNP Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Power - Max: 1.75W Frequency - Transition: 2MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: I-Pak	패키지: TO-251-3 Short Leads, IPak, TO-251AA	재고5,216	10A	60V	8V @ 3.3A, 10A	50µA	20 @ 4A, 4V	1.75W	2MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	I-Pak
BC372G	ON Semiconductor	TRANS NPN DARL 100V 1A TO-92 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.1V @ 250µA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고6,288	1A	100V	1.1V @ 250µA, 250mA	100nA (ICBO)	10000 @ 100mA, 5V	625mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
KSD73YTU	Fairchild/ON Semiconductor	TRANS NPN 60V 5A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 5mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 10V Power - Max: 30W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고3,456	5A	60V	2V @ 500mA, 5A	5mA (ICBO)	120 @ 1A, 10V	30W	20MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
BCX799_D27Z	Fairchild/ON Semiconductor	TRANS PNP 45V 0.5A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 2.5mA, 100mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 1V Power - Max: 625mW Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고7,600	500mA	45V	600mV @ 2.5mA, 100mA	10nA	80 @ 10mA, 1V	625mW	-	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2SC59930P	Panasonic Electronic Components	TRANS NPN 180V 1.5A TO-220D Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 130MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220D-A1	패키지: TO-220-3 Full Pack	재고2,384	1.5A	180V	500mV @ 100mA, 1A	100µA (ICBO)	120 @ 100mA, 5V	2W	130MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220D-A1
2SC5731T100R	Rohm Semiconductor	TRANS NPN 30V 2A SOT-89 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	패키지: TO-243AA	재고5,200	2A	30V	-	-	-	-	-	-	Surface Mount	TO-243AA	MPT3
MJH11020	ON Semiconductor	TRANS NPN DARL 200V 15A TO218 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 200V Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V Power - Max: 150W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: SOT-93	패키지: TO-218-3	재고10,464	15A	200V	4V @ 150mA, 15A	1mA	400 @ 10A, 5V	150W	3MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-218-3	SOT-93
2N4923	ON Semiconductor	TRANS NPN 80V 1A TO225AA Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V Power - Max: 30W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-225AA	패키지: TO-225AA, TO-126-3	재고65,808	1A	80V	600mV @ 100mA, 1A	500µA	30 @ 500mA, 1V	30W	3MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-225AA
BD243B	Fairchild/ON Semiconductor	TRANS NPN 80V 6A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Power - Max: 65W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고7,896	6A	80V	1.5V @ 1A, 6A	700µA	15 @ 3A, 4V	65W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220
2SC6054J0L	Panasonic Electronic Components	TRANS NPN 50V 0.1A SSMINI-3 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V Power - Max: 125mW Frequency - Transition: 100MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F1	패키지: SC-89, SOT-490	재고1,008,000	100mA	50V	300mV @ 10mA, 100mA	100µA	160 @ 2mA, 10V	125mW	100MHz	125°C (TJ)	Surface Mount	SC-89, SOT-490	SSMini3-F1
2SAR523MT2L	Rohm Semiconductor	TRANS PNP 50V 0.1A VMT3 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 150mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	패키지: SOT-723	재고74,130	100mA	50V	400mV @ 5mA, 50mA	100nA (ICBO)	120 @ 1mA, 6V	150mW	300MHz	150°C (TJ)	Surface Mount	SOT-723	VMT3
2SD1796	Sanken	TRANS NPN DARL 60V 4A TO220F Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 10mA, 3A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 4V Power - Max: 25W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	패키지: TO-220-3 Full Pack	재고28,560	4A	60V	1.5V @ 10mA, 3A	10µA (ICBO)	2000 @ 3A, 4V	25W	60MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
2N4401TAR	Fairchild/ON Semiconductor	TRANS NPN 40V 0.6A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Power - Max: 625mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고1,008,000	600mA	40V	750mV @ 50mA, 500mA	-	100 @ 150mA, 1V	625mW	250MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC807-25-AU_R1_000A1	Panjit International Inc.	TRANS PNP 45V 0.5A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 330 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	재고7,683	500 mA	45 V	700mV @ 50mA, 500mA	100nA (ICBO)	160 @ 100mA, 1V	330 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
MMBTA92-HF	Comchip Technology	TRANS PNP 300V 0.2A SOT23-3 Transistor Type: PNP Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 200mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Power - Max: 300 mW Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	200 mA	300 V	200mV @ 2mA, 20mA	250nA (ICBO)	100 @ 10mA, 10V	300 mW	50MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
CPH6702-TL-E	onsemi	BIP PNP+SBD 1.5A 15V Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANSL2N3439L	Microchip Technology	RH POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	1 A	350 V	500mV @ 4mA, 50mA	2µA	40 @ 20mA, 10V	800 mW	-	-55°C ~ 200°C	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
MJ11029G	onsemi	POWER BIPOLAR TRANSISTOR, 50A, 6 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 3.5V @ 500mA, 50A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V Power - Max: 300 W Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AE Supplier Device Package: TO-204 (TO-3)	패키지: -	Request a Quote	50 A	60 V	3.5V @ 500mA, 50A	2mA	1000 @ 25A, 5V	300 W	-	-55°C ~ 200°C (TJ)	Through Hole	TO-204AE	TO-204 (TO-3)
JAN2N3739	Microchip Technology	NPN TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 25mA, 250mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 250mA, 10V Power - Max: 20 W Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	패키지: -	Request a Quote	1 A	300 V	2.5V @ 25mA, 250mA	100µA (ICBO)	25 @ 250mA, 10V	20 W	-	-55°C ~ 200°C (TJ)	Through Hole	TO-213AA, TO-66-2	TO-66 (TO-213AA)
JANKCDF2N5154	Microchip Technology	TRANS NPN 80V 2A TO39 Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	2 A	80 V	1.5V @ 500mA, 5A	50µA	70 @ 2.5A, 5V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
BC817-40HE3-TP	Micro Commercial Co	TRANS NPN 45V 0.5A SOT23 Transistor Type: - Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 300 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	재고519	500 mA	45 V	700mV @ 50mA, 500mA	100nA (ICBO)	250 @ 100mA, 1V	300 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
BSR43-TP	Micro Commercial Co	Interface Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 500 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	Request a Quote	1 A	80 V	500mV @ 50mA, 500mA	100nA (ICBO)	100 @ 100mA, 5V	500 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
2N3920	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 15 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AD (TO-3)	패키지: -	Request a Quote	10 A	60 V	-	-	-	15 W	-	-	Through Hole	TO-204AA, TO-3	TO-204AD (TO-3)
2N6053	Microchip Technology	POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANKCB2N5002	Microchip Technology	TRANS NPN 80V 10A DIE Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Power - Max: 2 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Stud Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	10 A	80 V	1.5V @ 500mA, 5A	50µA	30 @ 2.5A, 5V	2 W	-	-65°C ~ 200°C (TJ)	Stud Mount	Die	Die
NTE226	NTE Electronics, Inc	TRANS PNP 35V 2A TO66 Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 35 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 200µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 200mA, 1.5V Power - Max: 12 W Frequency - Transition: - Operating Temperature: 85°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66	패키지: -	Request a Quote	2 A	35 V	-	200µA (ICBO)	50 @ 200mA, 1.5V	12 W	-	85°C (TJ)	Through Hole	TO-213AA, TO-66-2	TO-66
TIP41A-PBFREE	Central Semiconductor Corp	TRANS NPN 60V 6A TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V Power - Max: 65 W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: -	Request a Quote	6 A	60 V	1.5V @ 600mA, 6A	700µA	30 @ 300mA, 4V	65 W	3MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3

BFN38H6327XTSA1

Infineon Technologies

TRANS NPN 300V 0.2A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Power - Max: 1.5W
Frequency - Transition: 70MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

패키지: TO-261-4, TO-261AA

재고4,896

200mA

300V

500mV @ 2mA, 20mA

100nA (ICBO)

30 @ 30mA, 10V

1.5W

70MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

PG-SOT223-4

MJD2955-1G

ON Semiconductor

TRANS PNP 60V 10A IPAK

Transistor Type: PNP
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Power - Max: 1.75W
Frequency - Transition: 2MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-Pak

패키지: TO-251-3 Short Leads, IPak, TO-251AA

재고5,216

10A

60V

8V @ 3.3A, 10A

50µA

20 @ 4A, 4V

1.75W

2MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

I-Pak

BC372G

ON Semiconductor

TRANS NPN DARL 100V 1A TO-92

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 250µA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고6,288

1A

100V

1.1V @ 250µA, 250mA

100nA (ICBO)

10000 @ 100mA, 5V

625mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

KSD73YTU

Fairchild/ON Semiconductor

TRANS NPN 60V 5A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 5mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 10V
Power - Max: 30W
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고3,456

5A

60V

2V @ 500mA, 5A

5mA (ICBO)

120 @ 1A, 10V

30W

20MHz

150°C (TJ)

Through Hole

TO-220-3

BCX799_D27Z

Fairchild/ON Semiconductor

TRANS PNP 45V 0.5A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 1V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고7,600

500mA

45V

600mV @ 2.5mA, 100mA

10nA

80 @ 10mA, 1V

625mW

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2SC59930P

Panasonic Electronic Components

TRANS NPN 180V 1.5A TO-220D

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 180V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220D-A1

패키지: TO-220-3 Full Pack

재고2,384

1.5A

180V

500mV @ 100mA, 1A

100µA (ICBO)

120 @ 100mA, 5V

2W

130MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220D-A1

2SC5731T100R

Rohm Semiconductor

TRANS NPN 30V 2A SOT-89

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3

패키지: TO-243AA

재고5,200

2A

30V

-

Surface Mount

TO-243AA

MPT3

MJH11020

ON Semiconductor

TRANS NPN DARL 200V 15A TO218

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 200V
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Power - Max: 150W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: SOT-93

패키지: TO-218-3

재고10,464

15A

200V

4V @ 150mA, 15A

1mA

400 @ 10A, 5V

150W

3MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-218-3

SOT-93

2N4923

ON Semiconductor

TRANS NPN 80V 1A TO225AA

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V
Power - Max: 30W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA

패키지: TO-225AA, TO-126-3

재고65,808

1A

80V

600mV @ 100mA, 1A

500µA

30 @ 500mA, 1V

30W

3MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-225AA

BD243B

Fairchild/ON Semiconductor

TRANS NPN 80V 6A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Power - Max: 65W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고7,896

6A

80V

1.5V @ 1A, 6A

700µA

15 @ 3A, 4V

65W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220

2SC6054J0L

Panasonic Electronic Components

TRANS NPN 50V 0.1A SSMINI-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
Power - Max: 125mW
Frequency - Transition: 100MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F1

패키지: SC-89, SOT-490

재고1,008,000

100mA

50V

300mV @ 10mA, 100mA

100µA

160 @ 2mA, 10V

125mW

100MHz

125°C (TJ)

Surface Mount

SC-89, SOT-490

SSMini3-F1

2SAR523MT2L

Rohm Semiconductor

TRANS PNP 50V 0.1A VMT3

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 150mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3

패키지: SOT-723

재고74,130

100mA

50V

400mV @ 5mA, 50mA

100nA (ICBO)

120 @ 1mA, 6V

150mW

300MHz

150°C (TJ)

Surface Mount

SOT-723

VMT3

2SD1796

Sanken

TRANS NPN DARL 60V 4A TO220F

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 10mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 4V
Power - Max: 25W
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F

패키지: TO-220-3 Full Pack

재고28,560

4A

60V

1.5V @ 10mA, 3A

10µA (ICBO)

2000 @ 3A, 4V

25W

60MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F

2N4401TAR

Fairchild/ON Semiconductor

TRANS NPN 40V 0.6A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Power - Max: 625mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고1,008,000

600mA

40V

750mV @ 50mA, 500mA

-

100 @ 150mA, 1V

625mW

250MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC807-25-AU_R1_000A1

Panjit International Inc.

TRANS PNP 45V 0.5A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 330 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

재고7,683

500 mA

45 V

700mV @ 50mA, 500mA

100nA (ICBO)

160 @ 100mA, 1V

330 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

MMBTA92-HF

Comchip Technology

TRANS PNP 300V 0.2A SOT23-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Power - Max: 300 mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

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200 mA

300 V

200mV @ 2mA, 20mA

250nA (ICBO)

100 @ 10mA, 10V

300 mW

50MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

CPH6702-TL-E

onsemi

BIP PNP+SBD 1.5A 15V

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

JANSL2N3439L

Microchip Technology

RH POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

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1 A

350 V

500mV @ 4mA, 50mA

2µA

40 @ 20mA, 10V

800 mW

-

-55°C ~ 200°C

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

MJ11029G

onsemi

POWER BIPOLAR TRANSISTOR, 50A, 6

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 500mA, 50A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V
Power - Max: 300 W
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Supplier Device Package: TO-204 (TO-3)

패키지: -

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50 A

60 V

3.5V @ 500mA, 50A

2mA

1000 @ 25A, 5V

300 W

-

-55°C ~ 200°C (TJ)

Through Hole

TO-204AE

TO-204 (TO-3)

JAN2N3739

Microchip Technology

NPN TRANSISTOR

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 25mA, 250mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 250mA, 10V
Power - Max: 20 W
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)

패키지: -

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1 A

300 V

2.5V @ 25mA, 250mA

100µA (ICBO)

25 @ 250mA, 10V

20 W

-

-55°C ~ 200°C (TJ)

Through Hole

TO-213AA, TO-66-2

TO-66 (TO-213AA)

JANKCDF2N5154

Microchip Technology

TRANS NPN 80V 2A TO39

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

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2 A

80 V

1.5V @ 500mA, 5A

50µA

70 @ 2.5A, 5V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

BC817-40HE3-TP

Micro Commercial Co

TRANS NPN 45V 0.5A SOT23

Transistor Type: -
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 300 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

재고519

500 mA

45 V

700mV @ 50mA, 500mA

100nA (ICBO)

250 @ 100mA, 1V

300 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

BSR43-TP

Micro Commercial Co

Interface

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 500 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

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1 A

80 V

500mV @ 50mA, 500mA

100nA (ICBO)

100 @ 100mA, 5V

500 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

2N3920

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 15 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AD (TO-3)

패키지: -

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10 A

60 V

-

15 W

-

Through Hole

TO-204AA, TO-3

TO-204AD (TO-3)

2N6053

Microchip Technology

POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

JANKCB2N5002

Microchip Technology

TRANS NPN 80V 10A DIE

Transistor Type: NPN
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Power - Max: 2 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

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10 A

80 V

1.5V @ 500mA, 5A

50µA

30 @ 2.5A, 5V

2 W

-

-65°C ~ 200°C (TJ)

Stud Mount

Die

NTE226

NTE Electronics, Inc

TRANS PNP 35V 2A TO66

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 35 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 200µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 200mA, 1.5V
Power - Max: 12 W
Frequency - Transition: -
Operating Temperature: 85°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66

패키지: -

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2 A

35 V

-

200µA (ICBO)

50 @ 200mA, 1.5V

12 W

-

85°C (TJ)

Through Hole

TO-213AA, TO-66-2

TO-66

TIP41A-PBFREE

Central Semiconductor Corp

TRANS NPN 60V 6A TO220-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Power - Max: 65 W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: -

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6 A

60 V

1.5V @ 600mA, 6A

700µA

30 @ 300mA, 4V

65 W

3MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3