페이지 277 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC3668-O,T2CLAF(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	패키지: SC-71	재고6,816	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	1W	100MHz	150°C (TJ)	Through Hole	SC-71	MSTM
TIP47	Central Semiconductor Corp	TRANS NPN 250V 1A TO220 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 250V Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Power - Max: 40W Frequency - Transition: 10MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고708,960	1A	250V	1V @ 200mA, 1A	1mA	30 @ 300mA, 10V	40W	10MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
TIP36A-S	Bourns Inc.	TRANS PNP 60V 25A Transistor Type: PNP Current - Collector (Ic) (Max): 25A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V Power - Max: 3.5W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: SOT-93	패키지: TO-218-3	재고5,088	25A	60V	4V @ 5A, 25A	1mA	10 @ 15A, 4V	3.5W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-218-3	SOT-93
BD434	STMicroelectronics	TRANS PNP 22V 4A SOT-32 Transistor Type: PNP Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 22V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V Power - Max: 36W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: SOT-32	패키지: TO-225AA, TO-126-3	재고1,093,236	4A	22V	500mV @ 200mA, 2A	100µA	40 @ 10mA, 5V	36W	3MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	SOT-32
2STW4466	STMicroelectronics	TRANS NPN 80V 6A TO-247 Transistor Type: NPN Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 4V Power - Max: 60W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고5,472	6A	80V	1.5V @ 600mA, 6A	100nA (ICBO)	50 @ 2A, 4V	60W	20MHz	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
KSC2310OBU	Fairchild/ON Semiconductor	TRANS NPN 150V 0.05A TO-92L Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 Long Body	재고4,544	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92-3
BC214LC	Fairchild/ON Semiconductor	TRANS PNP 30V 0.5A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고7,136	500mA	30V	600mV @ 5mA, 100mA	15nA (ICBO)	140 @ 2mA, 5V	625mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BC337TFR	Fairchild/ON Semiconductor	TRANS NPN 45V 0.8A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고4,480	800mA	45V	700mV @ 50mA, 500mA	100nA	100 @ 100mA, 1V	625mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC237B	Central Semiconductor Corp	THROUGH-HOLE TRANSISTOR-SMALL SI Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Power - Max: 300mW Frequency - Transition: 150MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고5,568	100mA	50V	600mV @ 5mA, 100mA	15nA	180 @ 2mA, 5V	300mW	150MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
2SA1419S-TD-H	ON Semiconductor	TRANS PNP 160V 1.5A PCP Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Power - Max: 500mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	패키지: TO-243AA	재고7,440	1.5A	160V	500mV @ 50mA, 500mA	1µA (ICBO)	140 @ 100mA, 5V	500mW	120MHz	150°C (TJ)	Surface Mount	TO-243AA	PCP
2SA2040-TL-E	ON Semiconductor	TRANS PNP 50V 8A TP-FA Transistor Type: PNP Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 290MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: 2-TP-FA	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고9,864	8A	50V	400mV @ 40mA, 2A	100nA (ICBO)	200 @ 500mA, 2V	1W	290MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	2-TP-FA
SBC846BWT1G	ON Semiconductor	TRANS NPN 65V 0.1A SC-70 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 (SOT323)	패키지: SC-70, SOT-323	재고6,704	100mA	65V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	150mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70-3 (SOT323)
TIP102-BP	Micro Commercial Co	TRANS NPN DARL 100V 8A TO-220 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V Power - Max: 80W Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고20,172	8A	100V	2.5V @ 80mA, 8A	50µA	1000 @ 3A, 4V	80W	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
MMBT3904LT1HTSA1	Infineon Technologies	TRANS NPN 40V 0.2A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 330mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고380,682	200mA	40V	300mV @ 5mA, 50mA	50nA (ICBO)	100 @ 10mA, 1V	330mW	300MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
FZT696BTA	Diodes Incorporated	TRANS NPN 180V 0.5A SOT-223 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 200mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고22,992	500mA	180V	250mV @ 5mA, 200mA	100nA (ICBO)	150 @ 200mA, 5V	2W	70MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
FMMT491TA	Diodes Incorporated	TRANS NPN 60V 1A SOT23-3 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Power - Max: 500mW Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고1,168,632	1A	60V	250mV @ 100mA, 1A	100nA	100 @ 500mA, 5V	500mW	150MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2SB1406-AN	onsemi	PNP 1.5A 50V DARLINGTON Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SAR583D3FRATL	Rohm Semiconductor	PNP, TO-252 (DPAK), -50V -7A, PO Transistor Type: PNP Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 3V Power - Max: 10 W Frequency - Transition: 230MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252	패키지: -	재고6,801	7 A	50 V	400mV @ 150mA, 3A	1µA (ICBO)	180 @ 1mA, 3V	10 W	230MHz	150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252
2SB1140T	onsemi	PNP SILICON TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
PBSS4350T-QR	Nexperia USA Inc.	PBSS4350T-Q/SOT23/TO-236AB Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Power - Max: 1.2 W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	패키지: -	Request a Quote	2 A	50 V	370mV @ 300mA, 3A	100nA (ICBO)	300 @ 1A, 2V	1.2 W	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB
JAN2N6689	Microchip Technology	TRANS NPN 300V 100UA TO61 Transistor Type: NPN Current - Collector (Ic) (Max): 100 µA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 5V @ 5A, 15A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V Power - Max: 3 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TA) Mounting Type: Stud Mount Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud Supplier Device Package: TO-61	패키지: -	Request a Quote	100 µA	300 V	5V @ 5A, 15A	100µA	15 @ 1A, 3V	3 W	-	-65°C ~ 200°C (TA)	Stud Mount	TO-211MA, TO-210AC, TO-61-4, Stud	TO-61
JANSR2N2906AUBC	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UBC	패키지: -	Request a Quote	600 mA	60 V	1.6V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UBC
JANSP2N3635L	Microchip Technology	TRANS PNP 140V 1A TO5 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 140 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	1 A	140 V	600mV @ 5mA, 50mA	10µA	100 @ 50mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
JANTXV2N5416	Microchip Technology	PNP TRANSISTOR Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Power - Max: 750 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	1 A	300 V	2V @ 5mA, 50mA	1mA	30 @ 50mA, 10V	750 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
NJVMJD340T4G	onsemi	TRANS NPN 300V 0.5A DPAK Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Power - Max: 1.56 W Frequency - Transition: 10MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	패키지: -	재고873	500 mA	300 V	1V @ 10mA, 100mA	100µA	30 @ 50mA, 10V	1.56 W	10MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK
2C3790	Microchip Technology	POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SA1201-Y-TE12L-ZC	Toshiba Semiconductor and Storage	PB-F POWER TRANSISTOR PW-MINI PD Transistor Type: PNP Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 120 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 500 mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	패키지: -	재고2,322	800 mA	120 V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	500 mW	120MHz	150°C (TJ)	Surface Mount	TO-243AA	PW-MINI
CP588-2N2605-CT	Central Semiconductor Corp	TRANS PNP 45V 0.03A DIE Transistor Type: - Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 500µA, 10mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V Power - Max: 400 mW Frequency - Transition: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	30 mA	45 V	500mV @ 500µA, 10mA	-	100 @ 10µA, 5V	400 mW	-	-	Surface Mount	Die	Die

2SC3668-O,T2CLAF(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

패키지: SC-71

재고6,816

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

1W

100MHz

150°C (TJ)

Through Hole

SC-71

MSTM

TIP47

Central Semiconductor Corp

TRANS NPN 250V 1A TO220

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Power - Max: 40W
Frequency - Transition: 10MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고708,960

1A

250V

1V @ 200mA, 1A

1mA

30 @ 300mA, 10V

40W

10MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

TIP36A-S

Bourns Inc.

TRANS PNP 60V 25A

Transistor Type: PNP
Current - Collector (Ic) (Max): 25A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Power - Max: 3.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: SOT-93

패키지: TO-218-3

재고5,088

25A

60V

4V @ 5A, 25A

1mA

10 @ 15A, 4V

3.5W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-218-3

SOT-93

BD434

STMicroelectronics

TRANS PNP 22V 4A SOT-32

Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 22V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V
Power - Max: 36W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: SOT-32

패키지: TO-225AA, TO-126-3

재고1,093,236

4A

22V

500mV @ 200mA, 2A

100µA

40 @ 10mA, 5V

36W

3MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

SOT-32

2STW4466

STMicroelectronics

TRANS NPN 80V 6A TO-247

Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 4V
Power - Max: 60W
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고5,472

6A

80V

1.5V @ 600mA, 6A

100nA (ICBO)

50 @ 2A, 4V

60W

20MHz

150°C (TJ)

Through Hole

TO-247-3

KSC2310OBU

Fairchild/ON Semiconductor

TRANS NPN 150V 0.05A TO-92L

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 Long Body

재고4,544

50mA

150V

500mV @ 1mA, 10mA

100nA (ICBO)

70 @ 10mA, 5V

800mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92-3

BC214LC

Fairchild/ON Semiconductor

TRANS PNP 30V 0.5A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고7,136

500mA

30V

600mV @ 5mA, 100mA

15nA (ICBO)

140 @ 2mA, 5V

625mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BC337TFR

Fairchild/ON Semiconductor

TRANS NPN 45V 0.8A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고4,480

800mA

45V

700mV @ 50mA, 500mA

100nA

100 @ 100mA, 1V

625mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC237B

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 150MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고5,568

100mA

50V

600mV @ 5mA, 100mA

15nA

180 @ 2mA, 5V

300mW

150MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

2SA1419S-TD-H

ON Semiconductor

TRANS PNP 160V 1.5A PCP

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Power - Max: 500mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP

패키지: TO-243AA

재고7,440

1.5A

160V

500mV @ 50mA, 500mA

1µA (ICBO)

140 @ 100mA, 5V

500mW

120MHz

150°C (TJ)

Surface Mount

TO-243AA

PCP

2SA2040-TL-E

ON Semiconductor

TRANS PNP 50V 8A TP-FA

Transistor Type: PNP
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 290MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: 2-TP-FA

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고9,864

8A

50V

400mV @ 40mA, 2A

100nA (ICBO)

200 @ 500mA, 2V

1W

290MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

2-TP-FA

SBC846BWT1G

ON Semiconductor

TRANS NPN 65V 0.1A SC-70

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 150mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)

패키지: SC-70, SOT-323

재고6,704

100mA

65V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

150mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70-3 (SOT323)

TIP102-BP

Micro Commercial Co

TRANS NPN DARL 100V 8A TO-220

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Power - Max: 80W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고20,172

8A

100V

2.5V @ 80mA, 8A

50µA

1000 @ 3A, 4V

80W

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

MMBT3904LT1HTSA1

Infineon Technologies

TRANS NPN 40V 0.2A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 330mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고380,682

200mA

40V

300mV @ 5mA, 50mA

50nA (ICBO)

100 @ 10mA, 1V

330mW

300MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

FZT696BTA

Diodes Incorporated

TRANS NPN 180V 0.5A SOT-223

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 180V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 200mA, 5V
Power - Max: 2W
Frequency - Transition: 70MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고22,992

500mA

180V

250mV @ 5mA, 200mA

100nA (ICBO)

150 @ 200mA, 5V

2W

70MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

FMMT491TA

Diodes Incorporated

TRANS NPN 60V 1A SOT23-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Power - Max: 500mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고1,168,632

1A

60V

250mV @ 100mA, 1A

100nA

100 @ 500mA, 5V

500mW

150MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2SB1406-AN

onsemi

PNP 1.5A 50V DARLINGTON

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SAR583D3FRATL

Rohm Semiconductor

PNP, TO-252 (DPAK), -50V -7A, PO

Transistor Type: PNP
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 3V
Power - Max: 10 W
Frequency - Transition: 230MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252

패키지: -

재고6,801

7 A

50 V

400mV @ 150mA, 3A

1µA (ICBO)

180 @ 1mA, 3V

10 W

230MHz

150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252

2SB1140T

onsemi

PNP SILICON TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

PBSS4350T-QR

Nexperia USA Inc.

PBSS4350T-Q/SOT23/TO-236AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Power - Max: 1.2 W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB

패키지: -

Request a Quote

2 A

50 V

370mV @ 300mA, 3A

100nA (ICBO)

300 @ 1A, 2V

1.2 W

100MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB

JAN2N6689

Microchip Technology

TRANS NPN 300V 100UA TO61

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 µA
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 5V @ 5A, 15A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V
Power - Max: 3 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TA)
Mounting Type: Stud Mount
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Supplier Device Package: TO-61

패키지: -

Request a Quote

100 µA

300 V

5V @ 5A, 15A

100µA

15 @ 1A, 3V

3 W

-

-65°C ~ 200°C (TA)

Stud Mount

TO-211MA, TO-210AC, TO-61-4, Stud

TO-61

JANSR2N2906AUBC

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UBC

패키지: -

Request a Quote

600 mA

60 V

1.6V @ 50mA, 500mA

50nA

40 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UBC

JANSP2N3635L

Microchip Technology

TRANS PNP 140V 1A TO5

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

Request a Quote

1 A

140 V

600mV @ 5mA, 50mA

10µA

100 @ 50mA, 10V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

JANTXV2N5416

Microchip Technology

PNP TRANSISTOR

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Power - Max: 750 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

Request a Quote

1 A

300 V

2V @ 5mA, 50mA

1mA

30 @ 50mA, 10V

750 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

NJVMJD340T4G

onsemi

TRANS NPN 300V 0.5A DPAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Power - Max: 1.56 W
Frequency - Transition: 10MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

패키지: -

재고873

500 mA

300 V

1V @ 10mA, 100mA

100µA

30 @ 50mA, 10V

1.56 W

10MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

2C3790

Microchip Technology

POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SA1201-Y-TE12L-ZC

Toshiba Semiconductor and Storage

PB-F POWER TRANSISTOR PW-MINI PD

Transistor Type: PNP
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 500 mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI

패키지: -

재고2,322

800 mA

120 V

1V @ 50mA, 500mA

100nA (ICBO)

80 @ 100mA, 5V

500 mW

120MHz

150°C (TJ)

Surface Mount

TO-243AA

PW-MINI

CP588-2N2605-CT

Central Semiconductor Corp

TRANS PNP 45V 0.03A DIE

Transistor Type: -
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Power - Max: 400 mW
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

30 mA

45 V

500mV @ 500µA, 10mA

-

100 @ 10µA, 5V

400 mW

-

Surface Mount

Die