페이지 297 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
TIP31F-S	Bourns Inc.	TRANS NPN 160V 3A Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 750MA, 3A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Power - Max: 2W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고4,448	3A	160V	2.5V @ 750MA, 3A	300µA	25 @ 1A, 4V	2W	-	-	Through Hole	TO-220-3	TO-220
PN3565_D75Z	Fairchild/ON Semiconductor	TRANS NPN 25V 0.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 10V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,792	500mA	25V	350mV @ 100µA, 1mA	50nA (ICBO)	150 @ 1mA, 10V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MPS2369ARLRP	ON Semiconductor	TRANS NPN 15V 0.2A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고6,992	200mA	15V	500mV @ 10mA, 100mA	400nA	20 @ 100mA, 1V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
ZTX694BSTOB	Diodes Incorporated	TRANS NPN 120V 0.5A E-LINE Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 200mA, 2V Power - Max: 1W Frequency - Transition: 130MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3, Formed Leads	재고6,576	500mA	120V	500mV @ 5mA, 400mA	100nA (ICBO)	400 @ 200mA, 2V	1W	130MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
2N5962_D74Z	Fairchild/ON Semiconductor	TRANS NPN 45V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA Current - Collector Cutoff (Max): 2nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 10mA, 5V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,712	100mA	45V	200mV @ 500µA, 10mA	2nA (ICBO)	600 @ 10mA, 5V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N3417_D74Z	Fairchild/ON Semiconductor	TRANS NPN 50V 0.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고7,296	500mA	50V	300mV @ 3mA, 50mA	100nA (ICBO)	180 @ 2mA, 4.5V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
NST848BF3T5G	ON Semiconductor	TRANS NPN 30V 0.1A SOT-1123 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 290mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	패키지: SOT-1123	재고7,264	100mA	30V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	290mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-1123	SOT-1123
BCW68GR	Nexperia USA Inc.	BCW68GSOT23TO-236AB Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 250mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	패키지: TO-236-3, SC-59, SOT-23-3	재고6,288	800mA	45V	450mV @ 50mA, 500mA	5µA (ICBO)	160 @ 100mA, 1V	250mW	80MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB
PBHV9050Z,115	Nexperia USA Inc.	TRANS PNP 500V 0.25A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 250mA Voltage - Collector Emitter Breakdown (Max): 500V Vce Saturation (Max) @ Ib, Ic: 350mV @ 20mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 10V Power - Max: 700mW Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고2,000	250mA	500V	350mV @ 20mA, 100mA	100nA	80 @ 50mA, 10V	700mW	50MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
2SB14380RA	Panasonic Electronic Components	TRANS PNP 100V 2A MT-2 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 2V Power - Max: 1W Frequency - Transition: 90MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: MT-2-A1	패키지: 3-SIP	재고7,536	2A	100V	300mV @ 50mA, 1A	100nA (ICBO)	120 @ 200mA, 2V	1W	90MHz	150°C (TJ)	Through Hole	3-SIP	MT-2-A1
FJE3303H2TU	Fairchild/ON Semiconductor	TRANS NPN 400V 1.5A TO126 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 2V Power - Max: 20W Frequency - Transition: 4MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	패키지: TO-225AA, TO-126-3	재고424,548	1.5A	400V	3V @ 500mA, 1.5A	10µA (ICBO)	14 @ 500mA, 2V	20W	4MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126-3
2SAR572DGTL	Rohm Semiconductor	TRANS PNP 30V 5A CPT Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 3V Power - Max: 10W Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: CPT3	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고3,328	5A	30V	400mV @ 100mA, 2A	1µA (ICBO)	200 @ 500mA, 3V	10W	300MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	CPT3
PMMT591A,215	Nexperia USA Inc.	TRANS PNP 40V 1A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Power - Max: 250mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고26,964	1A	40V	500mV @ 100mA, 1A	100nA	300 @ 100mA, 5V	250mW	150MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
2DD2661-13	Diodes Incorporated	TRANS NPN 12V 2A SOT89-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 180mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V Power - Max: 900mW Frequency - Transition: 170MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고306,000	2A	12V	180mV @ 50mA, 1A	100nA (ICBO)	270 @ 200mA, 2V	900mW	170MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
BC817-40W-7	Diodes Incorporated	TRANS NPN 45V 0.5A SC70-3 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고36,000	500mA	45V	700mV @ 50mA, 500mA	100nA	250 @ 100mA, 1V	200mW	100MHz	-65°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
2N2219A	Microsemi Corporation	TRANS NPN 50V 0.8A TO-39 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: TO-205AD, TO-39-3 Metal Can	재고14,580	800mA	50V	1V @ 50mA, 500mA	10nA	100 @ 150mA, 10V	800mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
SBC817-25LT1G	ON Semiconductor	TRANS NPN 45V 0.5A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고36,000	500mA	45V	700mV @ 50mA, 500mA	100nA (ICBO)	160 @ 100mA, 1V	300mW	100MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
MMBT5551LT1G	ON Semiconductor	TRANS NPN 160V 0.6A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Power - Max: 225mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고6,863,892	600mA	160V	200mV @ 5mA, 50mA	100nA	80 @ 10mA, 5V	225mW	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
ZUMT619TA	Diodes Incorporated	TRANS NPN 50V 1A SC70-3 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Power - Max: 385mW Frequency - Transition: 215MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고559,092	1A	50V	270mV @ 50mA, 1A	10nA	200 @ 500mA, 2V	385mW	215MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
JANS2N2907AL	Microchip Technology	TRANS PNP 60V 0.6A TO18 Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	패키지: -	Request a Quote	600 mA	60 V	1.6V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
MMBT2484LT1	onsemi	TRANS SS GP NPN 60V SOT23 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BC807-16W_R1_00001	Panjit International Inc.	TRANS PNP 45V 0.5A SOT323 Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 300 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: -	재고8,625	500 mA	45 V	700mV @ 50mA, 500mA	100nA (ICBO)	100 @ 100mA, 1V	300 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
2N4232	Microchip Technology	POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N5287	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 5mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 50 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Stud Mount Package / Case: TO-210AA, TO-59-4, Stud Supplier Device Package: TO-59	패키지: -	Request a Quote	5 A	100 V	1.5V @ 1mA, 5mA	-	-	50 W	-	-65°C ~ 200°C (TJ)	Stud Mount	TO-210AA, TO-59-4, Stud	TO-59
ZXTN2010ZQTA	Diodes Incorporated	TRANS NPN 60V 5A SOT89-3 T&R Transistor Type: NPN Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 230mV @ 300mA, 6A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Power - Max: 2.1 W Frequency - Transition: 130MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: -	재고6,171	5 A	60 V	230mV @ 300mA, 6A	50nA (ICBO)	100 @ 2A, 1V	2.1 W	130MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
2N6030	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 120 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 200 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AD (TO-3)	패키지: -	Request a Quote	16 A	120 V	-	-	-	200 W	-	-	Through Hole	TO-204AA, TO-3	TO-204AD (TO-3)
FMMT718-TP	Micro Commercial Co	TRANS PNP 20V 1.5A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Power - Max: 350 mW Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	재고270,000	1.5 A	20 V	220mV @ 50mA, 1.5A	100nA (ICBO)	300 @ 100mA, 2V	350 mW	150MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2SC3117S	onsemi	TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 160 V Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Power - Max: 1 W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	패키지: -	Request a Quote	1.5 A	160 V	450mV @ 50mA, 500mA	1µA (ICBO)	140 @ 100mA, 5V	1 W	120MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126

TIP31F-S

Bourns Inc.

TRANS NPN 160V 3A

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 750MA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고4,448

3A

160V

2.5V @ 750MA, 3A

300µA

25 @ 1A, 4V

2W

-

Through Hole

TO-220-3

TO-220

PN3565_D75Z

Fairchild/ON Semiconductor

TRANS NPN 25V 0.5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 10V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,792

500mA

25V

350mV @ 100µA, 1mA

50nA (ICBO)

150 @ 1mA, 10V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MPS2369ARLRP

ON Semiconductor

TRANS NPN 15V 0.2A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고6,992

200mA

15V

500mV @ 10mA, 100mA

400nA

20 @ 100mA, 1V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

ZTX694BSTOB

Diodes Incorporated

TRANS NPN 120V 0.5A E-LINE

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 200mA, 2V
Power - Max: 1W
Frequency - Transition: 130MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3, Formed Leads

재고6,576

500mA

120V

500mV @ 5mA, 400mA

100nA (ICBO)

400 @ 200mA, 2V

1W

130MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

2N5962_D74Z

Fairchild/ON Semiconductor

TRANS NPN 45V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,712

100mA

45V

200mV @ 500µA, 10mA

2nA (ICBO)

600 @ 10mA, 5V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2N3417_D74Z

Fairchild/ON Semiconductor

TRANS NPN 50V 0.5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고7,296

500mA

50V

300mV @ 3mA, 50mA

100nA (ICBO)

180 @ 2mA, 4.5V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

NST848BF3T5G

ON Semiconductor

TRANS NPN 30V 0.1A SOT-1123

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 290mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1123
Supplier Device Package: SOT-1123

패키지: SOT-1123

재고7,264

100mA

30V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

290mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-1123

BCW68GR

Nexperia USA Inc.

BCW68GSOT23TO-236AB

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 250mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB

패키지: TO-236-3, SC-59, SOT-23-3

재고6,288

800mA

45V

450mV @ 50mA, 500mA

5µA (ICBO)

160 @ 100mA, 1V

250mW

80MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB

PBHV9050Z,115

Nexperia USA Inc.

TRANS PNP 500V 0.25A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 500V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 10V
Power - Max: 700mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고2,000

250mA

500V

350mV @ 20mA, 100mA

100nA

80 @ 50mA, 10V

700mW

50MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

2SB14380RA

Panasonic Electronic Components

TRANS PNP 100V 2A MT-2

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 2V
Power - Max: 1W
Frequency - Transition: 90MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: MT-2-A1

패키지: 3-SIP

재고7,536

2A

100V

300mV @ 50mA, 1A

100nA (ICBO)

120 @ 200mA, 2V

1W

90MHz

150°C (TJ)

Through Hole

3-SIP

MT-2-A1

FJE3303H2TU

Fairchild/ON Semiconductor

TRANS NPN 400V 1.5A TO126

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 2V
Power - Max: 20W
Frequency - Transition: 4MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3

패키지: TO-225AA, TO-126-3

재고424,548

1.5A

400V

3V @ 500mA, 1.5A

10µA (ICBO)

14 @ 500mA, 2V

20W

4MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126-3

2SAR572DGTL

Rohm Semiconductor

TRANS PNP 30V 5A CPT

Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 3V
Power - Max: 10W
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPT3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고3,328

5A

30V

400mV @ 100mA, 2A

1µA (ICBO)

200 @ 500mA, 3V

10W

300MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

CPT3

PMMT591A,215

Nexperia USA Inc.

TRANS PNP 40V 1A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Power - Max: 250mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고26,964

1A

40V

500mV @ 100mA, 1A

100nA

300 @ 100mA, 5V

250mW

150MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

2DD2661-13

Diodes Incorporated

TRANS NPN 12V 2A SOT89-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Power - Max: 900mW
Frequency - Transition: 170MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고306,000

2A

12V

180mV @ 50mA, 1A

100nA (ICBO)

270 @ 200mA, 2V

900mW

170MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

BC817-40W-7

Diodes Incorporated

TRANS NPN 45V 0.5A SC70-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고36,000

500mA

45V

700mV @ 50mA, 500mA

100nA

250 @ 100mA, 1V

200mW

100MHz

-65°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

2N2219A

Microsemi Corporation

TRANS NPN 50V 0.8A TO-39

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 800mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

재고14,580

800mA

50V

1V @ 50mA, 500mA

10nA

100 @ 150mA, 10V

800mW

-

-55°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

SBC817-25LT1G

ON Semiconductor

TRANS NPN 45V 0.5A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고36,000

500mA

45V

700mV @ 50mA, 500mA

100nA (ICBO)

160 @ 100mA, 1V

300mW

100MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

MMBT5551LT1G

ON Semiconductor

TRANS NPN 160V 0.6A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 225mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고6,863,892

600mA

160V

200mV @ 5mA, 50mA

100nA

80 @ 10mA, 5V

225mW

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

ZUMT619TA

Diodes Incorporated

TRANS NPN 50V 1A SC70-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 385mW
Frequency - Transition: 215MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고559,092

1A

50V

270mV @ 50mA, 1A

10nA

200 @ 500mA, 2V

385mW

215MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

JANS2N2907AL

Microchip Technology

TRANS PNP 60V 0.6A TO18

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

패키지: -

Request a Quote

600 mA

60 V

1.6V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

MMBT2484LT1

onsemi

TRANS SS GP NPN 60V SOT23

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

BC807-16W_R1_00001

Panjit International Inc.

TRANS PNP 45V 0.5A SOT323

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 300 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: -

재고8,625

500 mA

45 V

700mV @ 50mA, 500mA

100nA (ICBO)

100 @ 100mA, 1V

300 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

2N4232

Microchip Technology

POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2N5287

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 5mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 50 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: TO-210AA, TO-59-4, Stud
Supplier Device Package: TO-59

패키지: -

Request a Quote

5 A

100 V

1.5V @ 1mA, 5mA

-

50 W

-

-65°C ~ 200°C (TJ)

Stud Mount

TO-210AA, TO-59-4, Stud

TO-59

ZXTN2010ZQTA

Diodes Incorporated

TRANS NPN 60V 5A SOT89-3 T&R

Transistor Type: NPN
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 230mV @ 300mA, 6A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Power - Max: 2.1 W
Frequency - Transition: 130MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: -

재고6,171

5 A

60 V

230mV @ 300mA, 6A

50nA (ICBO)

100 @ 2A, 1V

2.1 W

130MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

2N6030

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 200 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AD (TO-3)

패키지: -

Request a Quote

16 A

120 V

-

200 W

-

Through Hole

TO-204AA, TO-3

TO-204AD (TO-3)

FMMT718-TP

Micro Commercial Co

TRANS PNP 20V 1.5A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Power - Max: 350 mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

재고270,000

1.5 A

20 V

220mV @ 50mA, 1.5A

100nA (ICBO)

300 @ 100mA, 2V

350 mW

150MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2SC3117S

onsemi

TRANSISTOR

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Power - Max: 1 W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

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1.5 A

160 V

450mV @ 50mA, 500mA

1µA (ICBO)

140 @ 100mA, 5V

1 W

120MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126