페이지 302 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
FJPF1943OTU	Fairchild/ON Semiconductor	TRANS PNP 230V 15A TO-220F Transistor Type: PNP Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 50W Frequency - Transition: 30MHz Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	패키지: TO-220-3 Full Pack	재고6,512	15A	230V	3V @ 800mA, 8A	5µA (ICBO)	80 @ 1A, 5V	50W	30MHz	-50°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
ZTX1051ASTOB	Diodes Incorporated	TRANS NPN 40V 4A E-LINE Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 4A Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Power - Max: 1W Frequency - Transition: 155MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3, Formed Leads	재고6,336	4A	40V	210mV @ 100mA, 4A	10nA	300 @ 1A, 2V	1W	155MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
KSD363RTU	Fairchild/ON Semiconductor	TRANS NPN 120V 6A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V Power - Max: 40W Frequency - Transition: 10MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고5,056	6A	120V	1V @ 100mA, 1A	1mA (ICBO)	40 @ 1A, 5V	40W	10MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
2N6107	Central Semiconductor Corp	TRANS PNP 70V 7A TO-220 Transistor Type: PNP Current - Collector (Ic) (Max): 7A Voltage - Collector Emitter Breakdown (Max): 70V Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V Power - Max: 40W Frequency - Transition: 4MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고24,792	7A	70V	3.5V @ 3A, 7A	1mA	30 @ 2A, 4V	40W	4MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
TIP42CTU	Fairchild/ON Semiconductor	TRANS PNP 100V 6A TO-220 Transistor Type: PNP Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Power - Max: 2W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고332,904	6A	100V	1.5V @ 600mA, 6A	700µA	15 @ 3A, 4V	2W	3MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
KSP05TA	Fairchild/ON Semiconductor	TRANS NPN 60V 0.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고7,024	500mA	60V	250mV @ 10mA, 100mA	100nA	50 @ 100mA, 1V	625mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BCP69-16F	Nexperia USA Inc.	BCP69-16/SC-73/REEL 13" Q1/T1 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고28,422	-	-	-	-	-	-	-	-	Surface Mount	TO-261-4, TO-261AA	SOT-223
BCV47E6327HTSA1	Infineon Technologies	TRANS NPN DARL 60V 0.5A SOT-23 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 360mW Frequency - Transition: 170MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고92,142	500mA	60V	1V @ 100µA, 100mA	100nA (ICBO)	10000 @ 100mA, 5V	360mW	170MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
2N5087	Central Semiconductor Corp	TRANS PNP 50V 0.05A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Power - Max: 625mW Frequency - Transition: 40MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고717,768	50mA	50V	300mV @ 1mA, 10mA	50nA (ICBO)	250 @ 100µA, 5V	625mW	40MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
KSA1298YMTF	Fairchild/ON Semiconductor	TRANS PNP 25V 0.8A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 200mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고26,142	800mA	25V	400mV @ 20mA, 500mA	100nA (ICBO)	160 @ 100mA, 1V	200mW	120MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BC850CMTF	Fairchild/ON Semiconductor	TRANS NPN 45V 0.1A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 310mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고23,388	100mA	45V	600mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	310mW	300MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BSV52	Fairchild/ON Semiconductor	TRANS NPN 12V 0.2A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Power - Max: 225mW Frequency - Transition: 400MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고326,628	200mA	12V	400mV @ 5mA, 50mA	100nA (ICBO)	40 @ 10mA, 1V	225mW	400MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
JANS2N2484UBC-TR	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V Power - Max: 360 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UBC	패키지: -	Request a Quote	50 mA	60 V	300mV @ 100µA, 1mA	2nA	250 @ 1mA, 5V	360 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UBC
APT17ZTR-G1	Diodes Incorporated	IC TRANSISTOR HIGH VOLT TO92 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANKCAR2N2369A	Microchip Technology	TRANS NPN 15V TO18 Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 15 V Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Power - Max: 360 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	패키지: -	Request a Quote	-	15 V	450mV @ 10mA, 100mA	400nA	20 @ 100mA, 1V	360 mW	-	-65°C ~ 200°C	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
BC857CQBZ	Nexperia USA Inc.	TRANS 45V 0.1A DFN1110D-3 Transistor Type: - Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 340 mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1110D-3	패키지: -	Request a Quote	100 mA	45 V	400mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	340 mW	-	150°C (TJ)	Surface Mount, Wettable Flank	3-XDFN Exposed Pad	DFN1110D-3
BC856B	Taiwan Semiconductor Corporation	SOT-23, -80V, -0.1A, PNP BIPOLAR Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Power - Max: 200 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote	100 mA	65 V	650mV @ 5mA, 100mA	100nA (ICBO)	220 @ 2mA, 5V	200 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
JANKCCP2N5151	Microchip Technology	RH POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	2 A	80 V	1.5V @ 500mA, 5A	50µA	30 @ 2.5A, 5V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
AC847BQ-7	Diodes Incorporated	GENERAL PURPOSE TRANSISTOR SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 310 mW Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	재고9,000	100 mA	45 V	600mV @ 5mA, 100mA	15nA	200 @ 2mA, 5V	310 mW	300MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BC849C_R1_00001	Panjit International Inc.	TRANS NPN 30V 0.1A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 330 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	재고7,500	100 mA	30 V	600mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	330 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2SA1370D-AE	onsemi	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 200 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V Power - Max: 1 W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: 3-MP	패키지: -	Request a Quote	100 mA	200 V	600mV @ 2mA, 20mA	100nA (ICBO)	60 @ 10mA, 10V	1 W	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	3-MP
MJD45H11AJ	Nexperia USA Inc.	TRANS PNP 80V 8A DPAK Transistor Type: PNP Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V Power - Max: 1.75 W Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	패키지: -	재고26,550	8 A	80 V	1V @ 400mA, 8A	1µA	60 @ 2A, 1V	1.75 W	80MHz	150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK
JANS2N5003	Microchip Technology	TRANS PNP 80V 5A TO59/I Transistor Type: PNP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Power - Max: 2 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: TO-210AA, TO-59-4, Stud Supplier Device Package: TO-59/I	패키지: -	Request a Quote	5 A	80 V	1.5V @ 500mA, 5A	50µA	30 @ 2.5A, 5V	2 W	-	-65°C ~ 200°C (TJ)	Chassis, Stud Mount	TO-210AA, TO-59-4, Stud	TO-59/I
JANTXV2N1613	Microchip Technology	TRANS NPN 30V 0.5A TO39 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	500 mA	30 V	1.5V @ 15mA, 150mA	10nA (ICBO)	40 @ 150mA, 10V	800 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
2N5541	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 130 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 7 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	5 A	130 V	-	-	-	7 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N3725A	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	500 mA	50 V	-	-	-	-	-	200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
MJD148J	Nexperia USA Inc.	TRANS NPN 45V 4A DPAK Transistor Type: NPN Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Power - Max: 1.6 W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	패키지: -	재고18,288	4 A	45 V	500mV @ 200mA, 2A	1µA	85 @ 500mA, 1V	1.6 W	3MHz	150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK
2SA1162-O-LXHF	Toshiba Semiconductor and Storage	TRANS PNP 50V 0.15A SMINI Transistor Type: PNP Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Power - Max: 200 mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	패키지: -	재고17,895	150 mA	50 V	300mV @ 10mA, 100mA	100nA (ICBO)	70 @ 2mA, 6V	200 mW	80MHz	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini

FJPF1943OTU

Fairchild/ON Semiconductor

TRANS PNP 230V 15A TO-220F

Transistor Type: PNP
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Power - Max: 50W
Frequency - Transition: 30MHz
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F

패키지: TO-220-3 Full Pack

재고6,512

15A

230V

3V @ 800mA, 8A

5µA (ICBO)

80 @ 1A, 5V

50W

30MHz

-50°C ~ 150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F

ZTX1051ASTOB

Diodes Incorporated

TRANS NPN 40V 4A E-LINE

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 4A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Power - Max: 1W
Frequency - Transition: 155MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3, Formed Leads

재고6,336

4A

40V

210mV @ 100mA, 4A

10nA

300 @ 1A, 2V

1W

155MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

KSD363RTU

Fairchild/ON Semiconductor

TRANS NPN 120V 6A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Power - Max: 40W
Frequency - Transition: 10MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고5,056

6A

120V

1V @ 100mA, 1A

1mA (ICBO)

40 @ 1A, 5V

40W

10MHz

150°C (TJ)

Through Hole

TO-220-3

2N6107

Central Semiconductor Corp

TRANS PNP 70V 7A TO-220

Transistor Type: PNP
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V
Power - Max: 40W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고24,792

7A

70V

3.5V @ 3A, 7A

1mA

30 @ 2A, 4V

40W

4MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

TIP42CTU

Fairchild/ON Semiconductor

TRANS PNP 100V 6A TO-220

Transistor Type: PNP
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Power - Max: 2W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고332,904

6A

100V

1.5V @ 600mA, 6A

700µA

15 @ 3A, 4V

2W

3MHz

150°C (TJ)

Through Hole

TO-220-3

KSP05TA

Fairchild/ON Semiconductor

TRANS NPN 60V 0.5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고7,024

500mA

60V

250mV @ 10mA, 100mA

100nA

50 @ 100mA, 1V

625mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BCP69-16F

Nexperia USA Inc.

BCP69-16/SC-73/REEL 13" Q1/T1

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고28,422

-

Surface Mount

TO-261-4, TO-261AA

SOT-223

BCV47E6327HTSA1

Infineon Technologies

TRANS NPN DARL 60V 0.5A SOT-23

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 360mW
Frequency - Transition: 170MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고92,142

500mA

60V

1V @ 100µA, 100mA

100nA (ICBO)

10000 @ 100mA, 5V

360mW

170MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

2N5087

Central Semiconductor Corp

TRANS PNP 50V 0.05A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Power - Max: 625mW
Frequency - Transition: 40MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고717,768

50mA

50V

300mV @ 1mA, 10mA

50nA (ICBO)

250 @ 100µA, 5V

625mW

40MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

KSA1298YMTF

Fairchild/ON Semiconductor

TRANS PNP 25V 0.8A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 200mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고26,142

800mA

25V

400mV @ 20mA, 500mA

100nA (ICBO)

160 @ 100mA, 1V

200mW

120MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BC850CMTF

Fairchild/ON Semiconductor

TRANS NPN 45V 0.1A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 310mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고23,388

100mA

45V

600mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

310mW

300MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BSV52

Fairchild/ON Semiconductor

TRANS NPN 12V 0.2A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Power - Max: 225mW
Frequency - Transition: 400MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고326,628

200mA

12V

400mV @ 5mA, 50mA

100nA (ICBO)

40 @ 10mA, 1V

225mW

400MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

JANS2N2484UBC-TR

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Power - Max: 360 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UBC

패키지: -

Request a Quote

50 mA

60 V

300mV @ 100µA, 1mA

2nA

250 @ 1mA, 5V

360 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UBC

APT17ZTR-G1

Diodes Incorporated

IC TRANSISTOR HIGH VOLT TO92

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

JANKCAR2N2369A

Microchip Technology

TRANS NPN 15V TO18

Transistor Type: NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 15 V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Power - Max: 360 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

패키지: -

Request a Quote

-

15 V

450mV @ 10mA, 100mA

400nA

20 @ 100mA, 1V

360 mW

-

-65°C ~ 200°C

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

BC857CQBZ

Nexperia USA Inc.

TRANS 45V 0.1A DFN1110D-3

Transistor Type: -
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 340 mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1110D-3

패키지: -

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100 mA

45 V

400mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

340 mW

-

150°C (TJ)

Surface Mount, Wettable Flank

3-XDFN Exposed Pad

DFN1110D-3

BC856B

Taiwan Semiconductor Corporation

SOT-23, -80V, -0.1A, PNP BIPOLAR

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 200 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

Request a Quote

100 mA

65 V

650mV @ 5mA, 100mA

100nA (ICBO)

220 @ 2mA, 5V

200 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

JANKCCP2N5151

Microchip Technology

RH POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

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2 A

80 V

1.5V @ 500mA, 5A

50µA

30 @ 2.5A, 5V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

AC847BQ-7

Diodes Incorporated

GENERAL PURPOSE TRANSISTOR SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 310 mW
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

재고9,000

100 mA

45 V

600mV @ 5mA, 100mA

15nA

200 @ 2mA, 5V

310 mW

300MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BC849C_R1_00001

Panjit International Inc.

TRANS NPN 30V 0.1A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 330 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

재고7,500

100 mA

30 V

600mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

330 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2SA1370D-AE

onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
Power - Max: 1 W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: 3-MP

패키지: -

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100 mA

200 V

600mV @ 2mA, 20mA

100nA (ICBO)

60 @ 10mA, 10V

1 W

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

3-MP

MJD45H11AJ

Nexperia USA Inc.

TRANS PNP 80V 8A DPAK

Transistor Type: PNP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Power - Max: 1.75 W
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

패키지: -

재고26,550

8 A

80 V

1V @ 400mA, 8A

1µA

60 @ 2A, 1V

1.75 W

80MHz

150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

JANS2N5003

Microchip Technology

TRANS PNP 80V 5A TO59/I

Transistor Type: PNP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Power - Max: 2 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: TO-210AA, TO-59-4, Stud
Supplier Device Package: TO-59/I

패키지: -

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5 A

80 V

1.5V @ 500mA, 5A

50µA

30 @ 2.5A, 5V

2 W

-

-65°C ~ 200°C (TJ)

Chassis, Stud Mount

TO-210AA, TO-59-4, Stud

TO-59/I

JANTXV2N1613

Microchip Technology

TRANS NPN 30V 0.5A TO39

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

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500 mA

30 V

1.5V @ 15mA, 150mA

10nA (ICBO)

40 @ 150mA, 10V

800 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

2N5541

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 130 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 7 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

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5 A

130 V

-

7 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

2N3725A

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

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500 mA

50 V

-

200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

MJD148J

Nexperia USA Inc.

TRANS NPN 45V 4A DPAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Power - Max: 1.6 W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

패키지: -

재고18,288

4 A

45 V

500mV @ 200mA, 2A

1µA

85 @ 500mA, 1V

1.6 W

3MHz

150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

2SA1162-O-LXHF

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SMINI

Transistor Type: PNP
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Power - Max: 200 mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

패키지: -

재고17,895

150 mA

50 V

300mV @ 10mA, 100mA

100nA (ICBO)

70 @ 2mA, 6V

200 mW

80MHz

125°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini