페이지 31 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
CHIPT0204GUE6327X6SA1	Infineon Technologies	CHIP T0204GU E6327 DIE Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,720	-	-	-	-	-	-	-	-	-	-	-
BC 807-16W E6327	Infineon Technologies	TRANS PNP 45V 0.5A SOT-323 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 250mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	패키지: SC-70, SOT-323	재고4,592	500mA	45V	700mV @ 50mA, 500mA	100nA (ICBO)	100 @ 100mA, 1V	250mW	200MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323-3
CP547-2N6287-WN	Central Semiconductor Corp	TRANS PNP DARL 20A 100V DIE Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,672	-	-	-	-	-	-	-	-	-	-	-
CXT5401E TR	Central Semiconductor Corp	TRANS PNP Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 220V Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Power - Max: 1.2W Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고2,176	600mA	220V	150mV @ 5mA, 50mA	50nA	100 @ 10mA, 5V	1.2W	300MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
BDW73C-S	Bourns Inc.	TRANS NPN DARL 100V 8A Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고2,496	8A	100V	4V @ 80mA, 8A	500µA	750 @ 3A, 3V	2W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
FSB6714	Fairchild/ON Semiconductor	TRANS NPN 30V 3-SSOT Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-SSOT	패키지: TO-236-3, SC-59, SOT-23-3	재고4,032	-	30V	-	-	-	-	-	-	-	TO-236-3, SC-59, SOT-23-3	3-SSOT
KSD1221YTU	Fairchild/ON Semiconductor	TRANS NPN 60V 3A I-PAK Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Power - Max: 1W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: I-Pak	패키지: TO-251-3 Short Leads, IPak, TO-251AA	재고4,880	3A	60V	1V @ 300mA, 3A	100µA (ICBO)	100 @ 500mA, 5V	1W	3MHz	150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	I-Pak
KSP75TF	Fairchild/ON Semiconductor	TRANS PNP DARL 40V 0.5A TO-92 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 625mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,888	500mA	40V	1.5V @ 100µA, 100mA	500nA	10000 @ 100mA, 5V	625mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N7053_D74Z	Fairchild/ON Semiconductor	TRANS NPN DARL 100V 1.5A TO-226 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V Power - Max: 1W Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package: TO-226	패키지: TO-226-3, TO-92-3 Long Body (Formed Leads)	재고4,736	1.5A	100V	1.5V @ 100µA, 100mA	200nA	1000 @ 1A, 5V	1W	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body (Formed Leads)	TO-226
JAN2N5238	Microsemi Corporation	TRANS NPN 170V 10A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 170V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	패키지: TO-205AA, TO-5-3 Metal Can	재고4,000	10A	170V	2.5V @ 1A, 10A	10µA	40 @ 5A, 5V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
DSC5A01T0L	Panasonic Electronic Components	TRANS NPN 40V 0.05A SMINI3 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2mA, 10V Power - Max: 150mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2-B	패키지: SC-85	재고3,808	50mA	40V	200mV @ 1mA, 10mA	1µA	1000 @ 2mA, 10V	150mW	150MHz	150°C (TJ)	Surface Mount	SC-85	SMini3-F2-B
2SAR514P5T100	Rohm Semiconductor	PNP -80V -0.7A MEDIUM POWER TRAN Transistor Type: PNP Current - Collector (Ic) (Max): 700mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Power - Max: 500mW Frequency - Transition: 380MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	패키지: TO-243AA	재고7,200	700mA	80V	400mV @ 15mA, 300mA	1µA (ICBO)	120 @ 100mA, 3V	500mW	380MHz	150°C (TJ)	Surface Mount	TO-243AA	MPT3
FZT3019	Fairchild/ON Semiconductor	TRANS NPN 80V 1A SOT-223 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223-4	패키지: TO-261-4, TO-261AA	재고145,800	1A	80V	500mV @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	1W	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223-4
MMST2907A-7-F	Diodes Incorporated	TRANS PNP 60V 0.6A SC70-3 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 200mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고745,200	600mA	60V	1.6V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	200mW	200MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
2N3771G	ON Semiconductor	TRANS NPN 40V 30A TO-3 Transistor Type: NPN Current - Collector (Ic) (Max): 30A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A Current - Collector Cutoff (Max): 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V Power - Max: 150W Frequency - Transition: 200kHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	패키지: TO-204AA, TO-3	재고9,876	30A	40V	4V @ 6A, 30A	10mA	15 @ 15A, 4V	150W	200kHz	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
MMBT5087LT1G	ON Semiconductor	TRANS PNP 50V 0.05A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Power - Max: 300mW Frequency - Transition: 40MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고3,018,984	50mA	50V	300mV @ 1mA, 10mA	50nA (ICBO)	250 @ 100µA, 5V	300mW	40MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
BC848B,215	Nexperia USA Inc.	TRANS NPN 30V 0.1A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고140,370	100mA	30V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	250mW	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
MMBTA06LT1G	ON Semiconductor	TRANS NPN 80V 0.5A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 225mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고5,885,016	500mA	80V	250mV @ 10mA, 100mA	100nA	100 @ 100mA, 1V	225mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
2SC4548-E-TP	Micro Commercial Co	TRANS NPN 400V 0.2A SOT89 Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 400 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 500 mW Frequency - Transition: 70MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	Request a Quote	200 mA	400 V	600mV @ 5mA, 50mA	100nA (ICBO)	100 @ 50mA, 10V	500 mW	70MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
JANS2N2218A	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	800 mA	50 V	1V @ 50mA, 500mA	10nA	40 @ 150mA, 10V	800 mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
PHPT61002PYCLHX	Nexperia USA Inc.	TRANS PNP 100V 2A LFPAK56 PWRSO8 Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 10V Power - Max: 25 W Frequency - Transition: 125MHz Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Supplier Device Package: LFPAK56, Power-SO8	패키지: -	재고4,500	2 A	100 V	500mV @ 200mA, 2A	100nA (ICBO)	20 @ 2A, 10V	25 W	125MHz	175°C (TJ)	Surface Mount	SC-100, SOT-669	LFPAK56, Power-SO8
2SA1016KG-AA	onsemi	SMALL SIGNAL BIPOLAR TRANS PNP Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC2001-L-AP	Micro Commercial Co	TRANS NPN 25V 0.7A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 70mA, 700mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 1V Power - Max: 600 mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	패키지: -	Request a Quote	700 mA	25 V	600mV @ 70mA, 700mA	100nA	135 @ 100mA, 1V	600 mW	50MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92
BCY59-V111-HQ	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANSR2N2219	Microchip Technology	TRANS NPN 50V 0.8A TO39 Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	800 mA	50 V	1.6V @ 50mA, 500mA	10nA	100 @ 150mA, 10V	800 mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
MPSA55RLRA	onsemi	TRANS PNP SS GP 60V TO92 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N6277	Microchip Technology	NPN TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 3V @ 10A, 50A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 4V Power - Max: 250 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	패키지: -	Request a Quote	50 A	150 V	3V @ 10A, 50A	50µA	50 @ 1A, 4V	250 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
2SA1772E-E	onsemi	HIGH VOLTAGE TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

CHIPT0204GUE6327X6SA1

Infineon Technologies

CHIP T0204GU E6327 DIE

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,720

-

BC 807-16W E6327

Infineon Technologies

TRANS PNP 45V 0.5A SOT-323

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 250mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

재고4,592

500mA

45V

700mV @ 50mA, 500mA

100nA (ICBO)

100 @ 100mA, 1V

250mW

200MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

PG-SOT323-3

CP547-2N6287-WN

Central Semiconductor Corp

TRANS PNP DARL 20A 100V DIE

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,672

-

CXT5401E TR

Central Semiconductor Corp

TRANS PNP

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 220V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Power - Max: 1.2W
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고2,176

600mA

220V

150mV @ 5mA, 50mA

50nA

100 @ 10mA, 5V

1.2W

300MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

BDW73C-S

Bourns Inc.

TRANS NPN DARL 100V 8A

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고2,496

8A

100V

4V @ 80mA, 8A

500µA

750 @ 3A, 3V

2W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

FSB6714

Fairchild/ON Semiconductor

TRANS NPN 30V 3-SSOT

Transistor Type: NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-SSOT

패키지: TO-236-3, SC-59, SOT-23-3

재고4,032

-

30V

-

TO-236-3, SC-59, SOT-23-3

3-SSOT

KSD1221YTU

Fairchild/ON Semiconductor

TRANS NPN 60V 3A I-PAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Power - Max: 1W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-Pak

패키지: TO-251-3 Short Leads, IPak, TO-251AA

재고4,880

3A

60V

1V @ 300mA, 3A

100µA (ICBO)

100 @ 500mA, 5V

1W

3MHz

150°C (TJ)

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

I-Pak

KSP75TF

Fairchild/ON Semiconductor

TRANS PNP DARL 40V 0.5A TO-92

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,888

500mA

40V

1.5V @ 100µA, 100mA

500nA

10000 @ 100mA, 5V

625mW

-

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2N7053_D74Z

Fairchild/ON Semiconductor

TRANS NPN DARL 100V 1.5A TO-226

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V
Power - Max: 1W
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-226

패키지: TO-226-3, TO-92-3 Long Body (Formed Leads)

재고4,736

1.5A

100V

1.5V @ 100µA, 100mA

200nA

1000 @ 1A, 5V

1W

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body (Formed Leads)

TO-226

JAN2N5238

Microsemi Corporation

TRANS NPN 170V 10A TO5

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 170V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5

패키지: TO-205AA, TO-5-3 Metal Can

재고4,000

10A

170V

2.5V @ 1A, 10A

10µA

40 @ 5A, 5V

1W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5

DSC5A01T0L

Panasonic Electronic Components

TRANS NPN 40V 0.05A SMINI3

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2mA, 10V
Power - Max: 150mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2-B

패키지: SC-85

재고3,808

50mA

40V

200mV @ 1mA, 10mA

1µA

1000 @ 2mA, 10V

150mW

150MHz

150°C (TJ)

Surface Mount

SC-85

SMini3-F2-B

2SAR514P5T100

Rohm Semiconductor

PNP -80V -0.7A MEDIUM POWER TRAN

Transistor Type: PNP
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Power - Max: 500mW
Frequency - Transition: 380MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3

패키지: TO-243AA

재고7,200

700mA

80V

400mV @ 15mA, 300mA

1µA (ICBO)

120 @ 100mA, 3V

500mW

380MHz

150°C (TJ)

Surface Mount

TO-243AA

MPT3

FZT3019

Fairchild/ON Semiconductor

TRANS NPN 80V 1A SOT-223

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-4

패키지: TO-261-4, TO-261AA

재고145,800

1A

80V

500mV @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

1W

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223-4

MMST2907A-7-F

Diodes Incorporated

TRANS PNP 60V 0.6A SC70-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 200mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고745,200

600mA

60V

1.6V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

200mW

200MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

2N3771G

ON Semiconductor

TRANS NPN 40V 30A TO-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V
Power - Max: 150W
Frequency - Transition: 200kHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

패키지: TO-204AA, TO-3

재고9,876

30A

40V

4V @ 6A, 30A

10mA

15 @ 15A, 4V

150W

200kHz

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

MMBT5087LT1G

ON Semiconductor

TRANS PNP 50V 0.05A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Power - Max: 300mW
Frequency - Transition: 40MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고3,018,984

50mA

50V

300mV @ 1mA, 10mA

50nA (ICBO)

250 @ 100µA, 5V

300mW

40MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

BC848B,215

Nexperia USA Inc.

TRANS NPN 30V 0.1A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고140,370

100mA

30V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

250mW

100MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

MMBTA06LT1G

ON Semiconductor

TRANS NPN 80V 0.5A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 225mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고5,885,016

500mA

80V

250mV @ 10mA, 100mA

100nA

100 @ 100mA, 1V

225mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

2SC4548-E-TP

Micro Commercial Co

TRANS NPN 400V 0.2A SOT89

Transistor Type: NPN
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 500 mW
Frequency - Transition: 70MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

Request a Quote

200 mA

400 V

600mV @ 5mA, 50mA

100nA (ICBO)

100 @ 50mA, 10V

500 mW

70MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

JANS2N2218A

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

Request a Quote

800 mA

50 V

1V @ 50mA, 500mA

10nA

40 @ 150mA, 10V

800 mW

-

-55°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

PHPT61002PYCLHX

Nexperia USA Inc.

TRANS PNP 100V 2A LFPAK56 PWRSO8

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 10V
Power - Max: 25 W
Frequency - Transition: 125MHz
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8

패키지: -

재고4,500

2 A

100 V

500mV @ 200mA, 2A

100nA (ICBO)

20 @ 2A, 10V

25 W

125MHz

175°C (TJ)

Surface Mount

SC-100, SOT-669

LFPAK56, Power-SO8

2SA1016KG-AA

onsemi

SMALL SIGNAL BIPOLAR TRANS PNP

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SC2001-L-AP

Micro Commercial Co

TRANS NPN 25V 0.7A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 70mA, 700mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 1V
Power - Max: 600 mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

패키지: -

Request a Quote

700 mA

25 V

600mV @ 70mA, 700mA

100nA

135 @ 100mA, 1V

600 mW

50MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92

BCY59-V111-HQ

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

JANSR2N2219

Microchip Technology

TRANS NPN 50V 0.8A TO39

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

Request a Quote

800 mA

50 V

1.6V @ 50mA, 500mA

10nA

100 @ 150mA, 10V

800 mW

-

-55°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

MPSA55RLRA

onsemi

TRANS PNP SS GP 60V TO92

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2N6277

Microchip Technology

NPN TRANSISTOR

Transistor Type: NPN
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 10A, 50A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 4V
Power - Max: 250 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

패키지: -

Request a Quote

50 A

150 V

3V @ 10A, 50A

50µA

50 @ 1A, 4V

250 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

2SA1772E-E

onsemi

HIGH VOLTAGE TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-