페이지 404 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
PBSS2540E,115	NXP	TRANS NPN 40V 0.5A SC75 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V Power - Max: 250mW Frequency - Transition: 450MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75	패키지: SC-75, SOT-416	재고4,304	500mA	40V	250mV @ 50mA, 500mA	100nA (ICBO)	100 @ 100mA, 2V	250mW	450MHz	150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75
MD1803DFX	STMicroelectronics	TRANS NPN 700V 10A ISOWATT218FX Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 700V Vce Saturation (Max) @ Ib, Ic: 2V @ 1.25A, 5A Current - Collector Cutoff (Max): 200µA DC Current Gain (hFE) (Min) @ Ic, Vce: 5.5 @ 5A, 5V Power - Max: 57W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOWATT218FX Supplier Device Package: ISOWATT-218FX	패키지: ISOWATT218FX	재고8,736	10A	700V	2V @ 1.25A, 5A	200µA	5.5 @ 5A, 5V	57W	-	150°C (TJ)	Through Hole	ISOWATT218FX	ISOWATT-218FX
ZXTCM322TA	Diodes Incorporated	TRANS NPN 50V 4A 3MLP Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Power - Max: 3W Frequency - Transition: 165MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerSMD, Flat Leads Supplier Device Package: 3-MLP/DFN (2x2)	패키지: 3-PowerSMD, Flat Leads	재고6,240	4A	50V	320mV @ 200mA, 4A	25nA	100 @ 2A, 2V	3W	165MHz	-55°C ~ 150°C (TJ)	Surface Mount	3-PowerSMD, Flat Leads	3-MLP/DFN (2x2)
KSC2310YTA	Fairchild/ON Semiconductor	TRANS NPN 150V 0.05A TO-92L Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 Long Body (Formed Leads)	재고360,000	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	120 @ 10mA, 5V	800mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body (Formed Leads)	TO-92-3
SS9014BTA	Fairchild/ON Semiconductor	TRANS NPN 45V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Power - Max: 450mW Frequency - Transition: 270MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,728	100mA	45V	300mV @ 5mA, 100mA	50nA (ICBO)	100 @ 1mA, 5V	450mW	270MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSA1298PYWD	Fairchild/ON Semiconductor	TRANS PNP 25V 0.8A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 200mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고6,528	800mA	25V	400mV @ 20mA, 500mA	100nA (ICBO)	100 @ 100mA, 1V	200mW	120MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
ZTX1053ASTOB	Diodes Incorporated	TRANS NPN 75V 3A E-LINE Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 75V Vce Saturation (Max) @ Ib, Ic: 350mV @ 100mA, 3A Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Power - Max: 1W Frequency - Transition: 140MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3, Formed Leads	재고3,392	3A	75V	350mV @ 100mA, 3A	10nA	300 @ 1A, 2V	1W	140MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
BC369_D27Z	Fairchild/ON Semiconductor	TRANS PNP 20V 1.5A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Power - Max: 625mW Frequency - Transition: 45MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고2,832	1.5A	20V	500mV @ 100mA, 1A	10µA (ICBO)	85 @ 500mA, 1V	625mW	45MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2STA2510	STMicroelectronics	TRANS PNP 100V 25A TO-3P Transistor Type: PNP Current - Collector (Ic) (Max): 25A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.2A, 12A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 12A, 4V Power - Max: 125W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	패키지: TO-3P-3, SC-65-3	재고6,640	25A	100V	1.5V @ 1.2A, 12A	10µA (ICBO)	40 @ 12A, 4V	125W	20MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
2SC382900L	Panasonic Electronic Components	TRANS NPN 10V 0.08A MINI-3P Transistor Type: NPN Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 10V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V Power - Max: 200mW Frequency - Transition: 6GHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	패키지: TO-236-3, SC-59, SOT-23-3	재고2,336	80mA	10V	-	1µA (ICBO)	50 @ 20mA, 8V	200mW	6GHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1
ZTX1149ASTZ	Diodes Incorporated	TRANS PNP 25V 3A E-LINE Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 300mV @ 70mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 135MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3, Formed Leads	재고12,048	3A	25V	300mV @ 70mA, 3A	100nA	250 @ 500mA, 2V	1W	135MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
BD680G	ON Semiconductor	TRANS PNP DARL 80V 4A TO225 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-225AA	패키지: TO-225AA, TO-126-3	재고16,164	4A	80V	2.5V @ 30mA, 1.5A	500µA	750 @ 1.5A, 3V	40W	-	-55°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-225AA
JANTXV2N5154	Aeroflex Metelics, Division of MACOM	DIODE Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: TO-205AD, TO-39-3 Metal Can	재고6,528	2A	80V	1.5V @ 500mA, 5A	50µA	70 @ 2.5A, 5V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
PMBTA14,215	Nexperia USA Inc.	TRANS NPN DARL 30V 0.5A SOT23 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Power - Max: 250mW Frequency - Transition: 125MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고4,352	500mA	30V	1.5V @ 100µA, 100mA	100nA (ICBO)	20000 @ 100mA, 5V	250mW	125MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BC848BWT106	Rohm Semiconductor	TRANS NPN 30V 0.1A SOT-323 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 200mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	패키지: SC-70, SOT-323	재고82,344	100mA	30V	600mV @ 5mA, 100mA	100nA (ICBO)	200 @ 2mA, 5V	200mW	200MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	UMT3
STT818B	STMicroelectronics	TRANS PNP 30V 3A SOT23-6 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 500mV @ 20mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Power - Max: 1.2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6L	패키지: SOT-23-6	재고5,023,956	3A	30V	500mV @ 20mA, 2A	100nA (ICBO)	100 @ 500mA, 1V	1.2W	-	150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6L
2SC3852A	Sanken	TRANS NPN 80V 3A TO220F Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 500mA, 4V Power - Max: 25W Frequency - Transition: 15MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	패키지: TO-220-3 Full Pack	재고5,184	3A	80V	500mV @ 50mA, 2A	10µA (ICBO)	500 @ 500mA, 4V	25W	15MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
NTE2353	NTE Electronics, Inc	TRANS NPN 800V 10A TO3PML Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 800 V Vce Saturation (Max) @ Ib, Ic: 5V @ 1.6A, 8A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 1A, 5V Power - Max: 70 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-3PML	패키지: -	Request a Quote	10 A	800 V	5V @ 1.6A, 8A	1mA	8 @ 1A, 5V	70 W	-	150°C (TJ)	Through Hole	TO-3P-3 Full Pack	TO-3PML
JANTX2N3467L	Microchip Technology	TRANS PNP 40V 1A TO5 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V Power - Max: 1 W Frequency - Transition: 175MHz Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	1 A	40 V	1.2V @ 100mA, 1A	100nA (ICBO)	40 @ 500mA, 1V	1 W	175MHz	-55°C ~ 175°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
BC856AW-QF	Nexperia USA Inc.	TRANS PNP 65V 0.1A SOT323 Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Power - Max: 200 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: -	Request a Quote	100 mA	65 V	600mV @ 5mA, 100mA	15nA (ICBO)	125 @ 2mA, 5V	200 mW	100MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
NTE24	NTE Electronics, Inc	TRANS NPN 80V 1A TO237 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V Power - Max: 850 mW Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-237AA Supplier Device Package: TO-237	패키지: -	Request a Quote	1 A	80 V	1.5V @ 100mA, 1A	100nA (ICBO)	40 @ 250mA, 2V	850 mW	50MHz	150°C (TJ)	Through Hole	TO-237AA	TO-237
2N1487	Microchip Technology	POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 3V @ 300mA, 1.5A Current - Collector Cutoff (Max): 25µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1.5A, 4V Power - Max: 75 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AD (TO-3)	패키지: -	Request a Quote	6 A	40 V	3V @ 300mA, 1.5A	25µA (ICBO)	15 @ 1.5A, 4V	75 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-204AD (TO-3)
JANSL2N2219AL	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	800 mA	50 V	1V @ 50mA, 500mA	10nA	100 @ 150mA, 10V	800 mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N5730	Microchip Technology	POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 45 W Frequency - Transition: - Operating Temperature: - Mounting Type: Stud Mount Package / Case: TO-210AA, TO-59-4, Stud Supplier Device Package: TO-59	패키지: -	Request a Quote	10 A	80 V	-	-	-	45 W	-	-	Stud Mount	TO-210AA, TO-59-4, Stud	TO-59
2N6420	Microchip Technology	TRANS PNP 175V 1A TO66 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 175 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 35 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	패키지: -	Request a Quote	1 A	175 V	-	-	-	35 W	-	-	Through Hole	TO-213AA, TO-66-2	TO-66 (TO-213AA)
2N6189	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 2mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 60 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Stud Mount Package / Case: TO-210AA, TO-59-4, Stud Supplier Device Package: TO-59	패키지: -	Request a Quote	10 A	100 V	1.2V @ 100µA, 2mA	-	-	60 W	-	-65°C ~ 200°C (TJ)	Stud Mount	TO-210AA, TO-59-4, Stud	TO-59
SJD1023T4G	onsemi	IC Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANTX2N4033UA-TR	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	패키지: -	Request a Quote	1 A	80 V	1V @ 100mA, 1A	25nA	100 @ 100mA, 5V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UA

PBSS2540E,115

NXP

TRANS NPN 40V 0.5A SC75

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Power - Max: 250mW
Frequency - Transition: 450MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75

패키지: SC-75, SOT-416

재고4,304

500mA

40V

250mV @ 50mA, 500mA

100nA (ICBO)

100 @ 100mA, 2V

250mW

450MHz

150°C (TJ)

Surface Mount

SC-75, SOT-416

SC-75

MD1803DFX

STMicroelectronics

TRANS NPN 700V 10A ISOWATT218FX

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 700V
Vce Saturation (Max) @ Ib, Ic: 2V @ 1.25A, 5A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5.5 @ 5A, 5V
Power - Max: 57W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOWATT218FX
Supplier Device Package: ISOWATT-218FX

패키지: ISOWATT218FX

재고8,736

10A

700V

2V @ 1.25A, 5A

200µA

5.5 @ 5A, 5V

57W

-

150°C (TJ)

Through Hole

ISOWATT218FX

ISOWATT-218FX

ZXTCM322TA

Diodes Incorporated

TRANS NPN 50V 4A 3MLP

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Power - Max: 3W
Frequency - Transition: 165MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Supplier Device Package: 3-MLP/DFN (2x2)

패키지: 3-PowerSMD, Flat Leads

재고6,240

4A

50V

320mV @ 200mA, 4A

25nA

100 @ 2A, 2V

3W

165MHz

-55°C ~ 150°C (TJ)

Surface Mount

3-PowerSMD, Flat Leads

3-MLP/DFN (2x2)

KSC2310YTA

Fairchild/ON Semiconductor

TRANS NPN 150V 0.05A TO-92L

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 Long Body (Formed Leads)

재고360,000

50mA

150V

500mV @ 1mA, 10mA

100nA (ICBO)

120 @ 10mA, 5V

800mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body (Formed Leads)

TO-92-3

SS9014BTA

Fairchild/ON Semiconductor

TRANS NPN 45V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Power - Max: 450mW
Frequency - Transition: 270MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,728

100mA

45V

300mV @ 5mA, 100mA

50nA (ICBO)

100 @ 1mA, 5V

450mW

270MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSA1298PYWD

Fairchild/ON Semiconductor

TRANS PNP 25V 0.8A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 200mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고6,528

800mA

25V

400mV @ 20mA, 500mA

100nA (ICBO)

100 @ 100mA, 1V

200mW

120MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

ZTX1053ASTOB

Diodes Incorporated

TRANS NPN 75V 3A E-LINE

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 75V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100mA, 3A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Power - Max: 1W
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3, Formed Leads

재고3,392

3A

75V

350mV @ 100mA, 3A

10nA

300 @ 1A, 2V

1W

140MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

BC369_D27Z

Fairchild/ON Semiconductor

TRANS PNP 20V 1.5A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Power - Max: 625mW
Frequency - Transition: 45MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고2,832

1.5A

20V

500mV @ 100mA, 1A

10µA (ICBO)

85 @ 500mA, 1V

625mW

45MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2STA2510

STMicroelectronics

TRANS PNP 100V 25A TO-3P

Transistor Type: PNP
Current - Collector (Ic) (Max): 25A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.2A, 12A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 12A, 4V
Power - Max: 125W
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

패키지: TO-3P-3, SC-65-3

재고6,640

25A

100V

1.5V @ 1.2A, 12A

10µA (ICBO)

40 @ 12A, 4V

125W

20MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

2SC382900L

Panasonic Electronic Components

TRANS NPN 10V 0.08A MINI-3P

Transistor Type: NPN
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 10V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Power - Max: 200mW
Frequency - Transition: 6GHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1

패키지: TO-236-3, SC-59, SOT-23-3

재고2,336

80mA

10V

-

1µA (ICBO)

50 @ 20mA, 8V

200mW

6GHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G1

ZTX1149ASTZ

Diodes Incorporated

TRANS PNP 25V 3A E-LINE

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 70mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 135MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3, Formed Leads

재고12,048

3A

25V

300mV @ 70mA, 3A

100nA

250 @ 500mA, 2V

1W

135MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

BD680G

ON Semiconductor

TRANS PNP DARL 80V 4A TO225

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Power - Max: 40W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA

패키지: TO-225AA, TO-126-3

재고16,164

4A

80V

2.5V @ 30mA, 1.5A

500µA

750 @ 1.5A, 3V

40W

-

-55°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-225AA

JANTXV2N5154

Aeroflex Metelics, Division of MACOM

DIODE

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: TO-205AD, TO-39-3 Metal Can

재고6,528

2A

80V

1.5V @ 500mA, 5A

50µA

70 @ 2.5A, 5V

1W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

PMBTA14,215

Nexperia USA Inc.

TRANS NPN DARL 30V 0.5A SOT23

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 250mW
Frequency - Transition: 125MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고4,352

500mA

30V

1.5V @ 100µA, 100mA

100nA (ICBO)

20000 @ 100mA, 5V

250mW

125MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BC848BWT106

Rohm Semiconductor

TRANS NPN 30V 0.1A SOT-323

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

패키지: SC-70, SOT-323

재고82,344

100mA

30V

600mV @ 5mA, 100mA

100nA (ICBO)

200 @ 2mA, 5V

200mW

200MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

UMT3

STT818B

STMicroelectronics

TRANS PNP 30V 3A SOT23-6

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Power - Max: 1.2W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6L

패키지: SOT-23-6

재고5,023,956

3A

30V

500mV @ 20mA, 2A

100nA (ICBO)

100 @ 500mA, 1V

1.2W

-

150°C (TJ)

Surface Mount

SOT-23-6

SOT-23-6L

2SC3852A

Sanken

TRANS NPN 80V 3A TO220F

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 500mA, 4V
Power - Max: 25W
Frequency - Transition: 15MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F

패키지: TO-220-3 Full Pack

재고5,184

3A

80V

500mV @ 50mA, 2A

10µA (ICBO)

500 @ 500mA, 4V

25W

15MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F

NTE2353

NTE Electronics, Inc

TRANS NPN 800V 10A TO3PML

Transistor Type: NPN
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Vce Saturation (Max) @ Ib, Ic: 5V @ 1.6A, 8A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 1A, 5V
Power - Max: 70 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-3PML

패키지: -

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10 A

800 V

5V @ 1.6A, 8A

1mA

8 @ 1A, 5V

70 W

-

150°C (TJ)

Through Hole

TO-3P-3 Full Pack

TO-3PML

JANTX2N3467L

Microchip Technology

TRANS PNP 40V 1A TO5

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Power - Max: 1 W
Frequency - Transition: 175MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

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1 A

40 V

1.2V @ 100mA, 1A

100nA (ICBO)

40 @ 500mA, 1V

1 W

175MHz

-55°C ~ 175°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

BC856AW-QF

Nexperia USA Inc.

TRANS PNP 65V 0.1A SOT323

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Power - Max: 200 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: -

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100 mA

65 V

600mV @ 5mA, 100mA

15nA (ICBO)

125 @ 2mA, 5V

200 mW

100MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

NTE24

NTE Electronics, Inc

TRANS NPN 80V 1A TO237

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V
Power - Max: 850 mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-237AA
Supplier Device Package: TO-237

패키지: -

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1 A

80 V

1.5V @ 100mA, 1A

100nA (ICBO)

40 @ 250mA, 2V

850 mW

50MHz

150°C (TJ)

Through Hole

TO-237AA

TO-237

2N1487

Microchip Technology

POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 25µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1.5A, 4V
Power - Max: 75 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AD (TO-3)

패키지: -

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6 A

40 V

3V @ 300mA, 1.5A

25µA (ICBO)

15 @ 1.5A, 4V

75 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-204AD (TO-3)

JANSL2N2219AL

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

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800 mA

50 V

1V @ 50mA, 500mA

10nA

100 @ 150mA, 10V

800 mW

-

-55°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

2N5730

Microchip Technology

POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 45 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Stud Mount
Package / Case: TO-210AA, TO-59-4, Stud
Supplier Device Package: TO-59

패키지: -

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10 A

80 V

-

45 W

-

Stud Mount

TO-210AA, TO-59-4, Stud

TO-59

2N6420

Microchip Technology

TRANS PNP 175V 1A TO66

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 35 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)

패키지: -

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1 A

175 V

-

35 W

-

Through Hole

TO-213AA, TO-66-2

TO-66 (TO-213AA)

2N6189

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 2mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 60 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: TO-210AA, TO-59-4, Stud
Supplier Device Package: TO-59

패키지: -

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10 A

100 V

1.2V @ 100µA, 2mA

-

60 W

-

-65°C ~ 200°C (TJ)

Stud Mount

TO-210AA, TO-59-4, Stud

TO-59

SJD1023T4G

onsemi

IC

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

JANTX2N4033UA-TR

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UA

패키지: -

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1 A

80 V

1V @ 100mA, 1A

25nA

100 @ 100mA, 5V

500 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UA