페이지 45 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
KSE3055TTU	Fairchild/ON Semiconductor	TRANS NPN 60V 10A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Power - Max: 600mW Frequency - Transition: 2MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고26,388	10A	60V	8V @ 3.3A, 10A	700µA	20 @ 4A, 4V	600mW	2MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
KSA1182OMTF	Fairchild/ON Semiconductor	TRANS PNP 30V 0.5A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Power - Max: 150mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고4,304	500mA	30V	250mV @ 10mA, 100mA	100nA (ICBO)	70 @ 100mA, 1V	150mW	200MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
MJE5851	ON Semiconductor	TRANS PNP 350V 8A TO220AB Transistor Type: PNP Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V Power - Max: 80W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고6,032	8A	350V	5V @ 3A, 8A	-	5 @ 5A, 5V	80W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
JAN2N3501L	Microsemi Corporation	TRANS NPN 150V 0.3A Transistor Type: NPN Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	패키지: TO-205AA, TO-5-3 Metal Can	재고4,672	300mA	150V	400mV @ 15mA, 150mA	10µA (ICBO)	100 @ 150mA, 10V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
TIP32C	Central Semiconductor Corp	THROUGH-HOLE TRANSISTOR-BIPOLAR Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Power - Max: 40W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고1,349,856	3A	100V	1.2V @ 375mA, 3A	300µA	25 @ 1A, 4V	40W	3MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
BC55PASX	Nexperia USA Inc.	IC TRANS NPN 1A 60 SOT1061 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 420mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: DFN2020D-3	패키지: 3-SMD, No Lead	재고5,280	1A	60V	500mV @ 50mA, 500mA	100nA (ICBO)	63 @ 150mA, 2V	420mW	180MHz	150°C (TJ)	Surface Mount	3-SMD, No Lead	DFN2020D-3
PBSS4041PX,115	Nexperia USA Inc.	TRANS PNP 60V 5A SOT89 Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500mA, 5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V Power - Max: 2.5W Frequency - Transition: 110MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고5,056	5A	60V	300mV @ 500mA, 5A	100nA	150 @ 2A, 2V	2.5W	110MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
BF824,235	Nexperia USA Inc.	TRANS PNP 30V 0.025A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 4mA, 10V Power - Max: 250mW Frequency - Transition: 450MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고3,040	25mA	30V	-	50nA (ICBO)	25 @ 4mA, 10V	250mW	450MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
TIP31C-BP	Micro Commercial Co	TRANS NPN 100V 3A TO-220AB Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Power - Max: 2W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고22,800	3A	100V	1.2V @ 375mA, 3A	300µA	10 @ 3A, 4V	2W	3MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
2SD145000A	Panasonic Electronic Components	TRANS NPN 20V 0.5A NS-B1 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Power - Max: 300mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: NS-B1 Supplier Device Package: NS-B1	패키지: NS-B1	재고48,888	500mA	20V	400mV @ 20mA, 500mA	100nA (ICBO)	200 @ 500mA, 2V	300mW	200MHz	150°C (TJ)	Through Hole	NS-B1	NS-B1
BD136G	ON Semiconductor	TRANS PNP 45V 1.5A TO225AA Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Power - Max: 1.25W Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-225AA	패키지: TO-225AA, TO-126-3	재고250,632	1.5A	45V	500mV @ 50mA, 500mA	100nA (ICBO)	40 @ 150mA, 2V	1.25W	-	-55°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-225AA
2SC3265-Y,LF	Toshiba Semiconductor and Storage	TRANS NPN 25V 0.8A S-MINI Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 200mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236	패키지: TO-236-3, SC-59, SOT-23-3	재고28,506	800mA	25V	400mV @ 20mA, 500mA	100nA (ICBO)	160 @ 100mA, 1V	200mW	120MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236
KST43MTF	Fairchild/ON Semiconductor	TRANS NPN 200V 0.5A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 200V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Power - Max: 350mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고27,036	500mA	200V	500mV @ 2mA, 20mA	100nA (ICBO)	40 @ 30mA, 10V	350mW	50MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
JANS2N2221UA	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: - Frequency - Transition: 250MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	패키지: -	Request a Quote	-	30 V	-	-	100 @ 150mA, 10V	-	250MHz	-	Surface Mount	4-SMD, No Lead	UA
2SA1246T-AA	onsemi	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CMPT3904G-TR-PBFREE	Central Semiconductor Corp	TRANS NPN 40V 0.2A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 350 mW Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	재고1,050,345	200 mA	40 V	300mV @ 5mA, 50mA	-	100 @ 10mA, 1V	350 mW	300MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
MJD31C-TP	Micro Commercial Co	Interface Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 20µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Power - Max: 1.25 W Frequency - Transition: 3MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	패키지: -	Request a Quote	3 A	100 V	1.2V @ 375mA, 3A	20µA	10 @ 3A, 4V	1.25 W	3MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK
2SA1083-E-AP	Micro Commercial Co	TRANS PNP 60V 0.1A TO92 Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 12V Power - Max: 400 mW Frequency - Transition: 90MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	패키지: -	Request a Quote	100 mA	60 V	200mV @ 1mA, 10mA	100nA (ICBO)	400 @ 2mA, 12V	400 mW	90MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92
BD882-R-TP	Micro Commercial Co	Interface Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 2V Power - Max: 500 mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	Request a Quote	3 A	30 V	500mV @ 200mA, 2A	10µA	60 @ 1A, 2V	500 mW	50MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
JAN2N3867U4	Microchip Technology	TRANS PNP 40V 3A U4 Transistor Type: PNP Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V Power - Max: 1 W Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U4	패키지: -	Request a Quote	3 A	40 V	1.5V @ 250mA, 2.5A	100µA (ICBO)	40 @ 1.5A, 2V	1 W	-	200°C (TJ)	Surface Mount	3-SMD, No Lead	U4
2N4225	Microchip Technology	POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 5 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	3 A	40 V	-	-	-	5 W	-	-	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N5624	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 116 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AD (TO-3)	패키지: -	Request a Quote	10 A	80 V	-	-	-	116 W	-	-	Through Hole	TO-204AA, TO-3	TO-204AD (TO-3)
MMBT3904-EVL	Venkel	Transistor,SOT-23,40V,200mA,NPN Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 225 mW Frequency - Transition: 300MHz Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: -	패키지: -	Request a Quote	200 mA	40 V	300mV @ 5mA, 50mA	50nA	100 @ 10mA, 1V	225 mW	300MHz	-50°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	-
2SA1973-5-TB-E-ON	onsemi	PNP EPITAXIAL PLANAR SILICON Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SAR513RHZGTL	Rohm Semiconductor	PNP, SOT-346T, -50V -1A, MIDDLE Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V Power - Max: 500 mW Frequency - Transition: 400MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Supplier Device Package: TSMT3	패키지: -	재고4,140	1 A	50 V	400mV @ 25mA, 500mA	1µA (ICBO)	180 @ 50mA, 2V	500 mW	400MHz	150°C (TJ)	Surface Mount	SC-96	TSMT3
2SCR572D3TL1	Rohm Semiconductor	TRANS NPN 30V 5A TO252 Transistor Type: NPN Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 3V Power - Max: 10 W Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252	패키지: -	재고43,182	5 A	30 V	400mV @ 100mA, 2A	1µA (ICBO)	200 @ 500mA, 3V	10 W	300MHz	150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252
FJP5555STU	Fairchild Semiconductor	POWER BIPOLAR TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
DXTP03100CFG-7	Diodes Incorporated	PWR MID PERF TRANSISTOR POWERDI3 Transistor Type: PNP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 380mV @ 400mA, 4A Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 2V Power - Max: 1.07 W Frequency - Transition: 125MHz Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (SWP) Type UX	패키지: -	재고5,940	5 A	100 V	380mV @ 400mA, 4A	50nA	250 @ 10mA, 2V	1.07 W	125MHz	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerVDFN	PowerDI3333-8 (SWP) Type UX

KSE3055TTU

Fairchild/ON Semiconductor

TRANS NPN 60V 10A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Power - Max: 600mW
Frequency - Transition: 2MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고26,388

10A

60V

8V @ 3.3A, 10A

700µA

20 @ 4A, 4V

600mW

2MHz

150°C (TJ)

Through Hole

TO-220-3

KSA1182OMTF

Fairchild/ON Semiconductor

TRANS PNP 30V 0.5A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Power - Max: 150mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고4,304

500mA

30V

250mV @ 10mA, 100mA

100nA (ICBO)

70 @ 100mA, 1V

150mW

200MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

MJE5851

ON Semiconductor

TRANS PNP 350V 8A TO220AB

Transistor Type: PNP
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Power - Max: 80W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고6,032

8A

350V

5V @ 3A, 8A

-

5 @ 5A, 5V

80W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

JAN2N3501L

Microsemi Corporation

TRANS NPN 150V 0.3A

Transistor Type: NPN
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5

패키지: TO-205AA, TO-5-3 Metal Can

재고4,672

300mA

150V

400mV @ 15mA, 150mA

10µA (ICBO)

100 @ 150mA, 10V

1W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5

TIP32C

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-BIPOLAR

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Power - Max: 40W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고1,349,856

3A

100V

1.2V @ 375mA, 3A

300µA

25 @ 1A, 4V

40W

3MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

BC55PASX

Nexperia USA Inc.

IC TRANS NPN 1A 60 SOT1061

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 420mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: DFN2020D-3

패키지: 3-SMD, No Lead

재고5,280

1A

60V

500mV @ 50mA, 500mA

100nA (ICBO)

63 @ 150mA, 2V

420mW

180MHz

150°C (TJ)

Surface Mount

3-SMD, No Lead

DFN2020D-3

PBSS4041PX,115

Nexperia USA Inc.

TRANS PNP 60V 5A SOT89

Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500mA, 5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Power - Max: 2.5W
Frequency - Transition: 110MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고5,056

5A

60V

300mV @ 500mA, 5A

100nA

150 @ 2A, 2V

2.5W

110MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

BF824,235

Nexperia USA Inc.

TRANS PNP 30V 0.025A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 4mA, 10V
Power - Max: 250mW
Frequency - Transition: 450MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고3,040

25mA

30V

-

50nA (ICBO)

25 @ 4mA, 10V

250mW

450MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

TIP31C-BP

Micro Commercial Co

TRANS NPN 100V 3A TO-220AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Power - Max: 2W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고22,800

3A

100V

1.2V @ 375mA, 3A

300µA

10 @ 3A, 4V

2W

3MHz

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

2SD145000A

Panasonic Electronic Components

TRANS NPN 20V 0.5A NS-B1

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 300mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1

패키지: NS-B1

재고48,888

500mA

20V

400mV @ 20mA, 500mA

100nA (ICBO)

200 @ 500mA, 2V

300mW

200MHz

150°C (TJ)

Through Hole

NS-B1

BD136G

ON Semiconductor

TRANS PNP 45V 1.5A TO225AA

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 1.25W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA

패키지: TO-225AA, TO-126-3

재고250,632

1.5A

45V

500mV @ 50mA, 500mA

100nA (ICBO)

40 @ 150mA, 2V

1.25W

-

-55°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-225AA

2SC3265-Y,LF

Toshiba Semiconductor and Storage

TRANS NPN 25V 0.8A S-MINI

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 200mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236

패키지: TO-236-3, SC-59, SOT-23-3

재고28,506

800mA

25V

400mV @ 20mA, 500mA

100nA (ICBO)

160 @ 100mA, 1V

200mW

120MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236

KST43MTF

Fairchild/ON Semiconductor

TRANS NPN 200V 0.5A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 200V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 350mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고27,036

500mA

200V

500mV @ 2mA, 20mA

100nA (ICBO)

40 @ 30mA, 10V

350mW

50MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

JANS2N2221UA

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: -
Frequency - Transition: 250MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UA

패키지: -

Request a Quote

-

30 V

-

100 @ 150mA, 10V

-

250MHz

-

Surface Mount

4-SMD, No Lead

UA

2SA1246T-AA

onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

CMPT3904G-TR-PBFREE

Central Semiconductor Corp

TRANS NPN 40V 0.2A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 350 mW
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

재고1,050,345

200 mA

40 V

300mV @ 5mA, 50mA

-

100 @ 10mA, 1V

350 mW

300MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

MJD31C-TP

Micro Commercial Co

Interface

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Power - Max: 1.25 W
Frequency - Transition: 3MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

패키지: -

Request a Quote

3 A

100 V

1.2V @ 375mA, 3A

20µA

10 @ 3A, 4V

1.25 W

3MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

2SA1083-E-AP

Micro Commercial Co

TRANS PNP 60V 0.1A TO92

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 12V
Power - Max: 400 mW
Frequency - Transition: 90MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

패키지: -

Request a Quote

100 mA

60 V

200mV @ 1mA, 10mA

100nA (ICBO)

400 @ 2mA, 12V

400 mW

90MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92

BD882-R-TP

Micro Commercial Co

Interface

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 2V
Power - Max: 500 mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

Request a Quote

3 A

30 V

500mV @ 200mA, 2A

10µA

60 @ 1A, 2V

500 mW

50MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

JAN2N3867U4

Microchip Technology

TRANS PNP 40V 3A U4

Transistor Type: PNP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4

패키지: -

Request a Quote

3 A

40 V

1.5V @ 250mA, 2.5A

100µA (ICBO)

40 @ 1.5A, 2V

1 W

-

200°C (TJ)

Surface Mount

3-SMD, No Lead

U4

2N4225

Microchip Technology

POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 5 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

Request a Quote

3 A

40 V

-

5 W

-

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

2N5624

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 116 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AD (TO-3)

패키지: -

Request a Quote

10 A

80 V

-

116 W

-

Through Hole

TO-204AA, TO-3

TO-204AD (TO-3)

MMBT3904-EVL

Venkel

Transistor,SOT-23,40V,200mA,NPN

Transistor Type: NPN
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 225 mW
Frequency - Transition: 300MHz
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: -

패키지: -

Request a Quote

200 mA

40 V

300mV @ 5mA, 50mA

50nA

100 @ 10mA, 1V

225 mW

300MHz

-50°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

2SA1973-5-TB-E-ON

onsemi

PNP EPITAXIAL PLANAR SILICON

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SAR513RHZGTL

Rohm Semiconductor

PNP, SOT-346T, -50V -1A, MIDDLE

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Power - Max: 500 mW
Frequency - Transition: 400MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Supplier Device Package: TSMT3

패키지: -

재고4,140

1 A

50 V

400mV @ 25mA, 500mA

1µA (ICBO)

180 @ 50mA, 2V

500 mW

400MHz

150°C (TJ)

Surface Mount

SC-96

TSMT3

2SCR572D3TL1

Rohm Semiconductor

TRANS NPN 30V 5A TO252

Transistor Type: NPN
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 3V
Power - Max: 10 W
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252

패키지: -

재고43,182

5 A

30 V

400mV @ 100mA, 2A

1µA (ICBO)

200 @ 500mA, 3V

10 W

300MHz

150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252

FJP5555STU

Fairchild Semiconductor

POWER BIPOLAR TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

DXTP03100CFG-7

Diodes Incorporated

PWR MID PERF TRANSISTOR POWERDI3

Transistor Type: PNP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 380mV @ 400mA, 4A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 2V
Power - Max: 1.07 W
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (SWP) Type UX

패키지: -

재고5,940

5 A

100 V

380mV @ 400mA, 4A

50nA

250 @ 10mA, 2V

1.07 W

125MHz

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerVDFN

PowerDI3333-8 (SWP) Type UX