페이지 479 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BC 846B E6327	Infineon Technologies	TRANS NPN 65V 0.1A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 330mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고2,928	100mA	65V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	330mW	250MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BC 846B B5003	Infineon Technologies	TRANS NPN 65V 0.1A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 330mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고2,912	100mA	65V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	330mW	250MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
2SA1680,T6SCMDF(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	패키지: TO-226-3, TO-92-3 Long Body	재고3,872	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	120 @ 100mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
PN2222ARLRAG	ON Semiconductor	TRANS NPN 40V 0.6A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 625mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고7,488	600mA	40V	1V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	625mW	300MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
JANTX2N3741	Microsemi Corporation	TRANS PNP 80V 4A TO-66 Transistor Type: PNP Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Power - Max: 25W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	패키지: TO-213AA, TO-66-2	재고3,552	4A	80V	600mV @ 125mA, 1A	10µA	30 @ 250mA, 1V	25W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-213AA, TO-66-2	TO-66 (TO-213AA)
JAN2N2218	Microsemi Corporation	TRANS NPN 30V 0.8A TO39 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 800mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: TO-205AD, TO-39-3 Metal Can	재고6,560	800mA	30V	1.6V @ 50mA, 500mA	10nA	40 @ 150mA, 10V	800mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
NJVMJD47T4G	ON Semiconductor	TRANS NPN 250V 1A DPAK-4 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 250V Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 200µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Power - Max: 1.56W Frequency - Transition: 10MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고3,200	1A	250V	1V @ 200mA, 1A	200µA	30 @ 300mA, 10V	1.56W	10MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK-3
30A02MH-TL-E	ON Semiconductor	TRANS PNP 30V 0.7A MCPH3 Transistor Type: PNP Current - Collector (Ic) (Max): 700mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 220mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Power - Max: 600mW Frequency - Transition: 520MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: 3-MCPH	패키지: 3-SMD, Flat Leads	재고36,000	700mA	30V	220mV @ 10mA, 200mA	100nA (ICBO)	200 @ 10mA, 2V	600mW	520MHz	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	3-MCPH
BD535	STMicroelectronics	TRANS NPN 60V 8A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 800mV @ 600mA, 6A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2A, 2V Power - Max: 50W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고8,196	8A	60V	800mV @ 600mA, 6A	100µA	25 @ 2A, 2V	50W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
BCP56-16T3G	ON Semiconductor	TRANS NPN 80V 1A SOT-223 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 1.5W Frequency - Transition: 130MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고75,600	1A	80V	500mV @ 50mA, 500mA	100nA (ICBO)	100 @ 150mA, 2V	1.5W	130MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BC856BM-TP	Micro Commercial Co	PNP PLASTIC-ENCAPSULATE BIPLOAR Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Power - Max: - Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: SOT-883	패키지: SC-101, SOT-883	재고3,328	100mA	65V	500mV @ 5mA, 100mA	100nA	220 @ 2mA, 5V	-	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-101, SOT-883	SOT-883
2SB1694T106	Rohm Semiconductor	TRANS PNP 30V 1A SOT-323 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Power - Max: 200mW Frequency - Transition: 320MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	패키지: SC-70, SOT-323	재고801,780	1A	30V	380mV @ 25mA, 500mA	100nA (ICBO)	270 @ 100mA, 2V	200mW	320MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	UMT3
PBSS4032NT,215	Nexperia USA Inc.	TRANS NPN 30V 2.6A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 2.6A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 320mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Power - Max: 1.1W Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고47,874	2.6A	30V	320mV @ 300mA, 3A	100nA	300 @ 1A, 2V	1.1W	180MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
MMBTA42LT1G	ON Semiconductor	TRANS NPN 300V 0.5A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Power - Max: 225mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고691,956	500mA	300V	500mV @ 2mA, 20mA	100nA (ICBO)	40 @ 30mA, 10V	225mW	50MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
2SC3383S-AA	onsemi	BIP NPN 0.2A 50V Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N2605UB	Microchip Technology	TRANS PNP 60V 0.03A UB Transistor Type: PNP Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500µA, 5V Power - Max: 400 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	30 mA	60 V	300mV @ 500µA, 10mA	10nA	150 @ 500µA, 5V	400 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UB
CMPT2907A-TR-PBFREE	Central Semiconductor Corp	TRANS PNP 60V 0.6A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 350 mW Frequency - Transition: 200MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	재고302,976	600 mA	60 V	1.6V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	350 mW	200MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
CP388X-BC108-CT	Central Semiconductor Corp	TRANS NPN 25V 0.2A DIE Transistor Type: - Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 600 mW Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	200 mA	25 V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	600 mW	-	-65°C ~ 150°C (TJ)	Surface Mount	Die	Die
BC849C	Diotec Semiconductor	TRANS NPN 30V 0.1A SOT23-3 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 250 mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: -	재고14,874	100 mA	30 V	600mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	250 mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
BC847AL3-TP	Micro Commercial Co	Interface Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 150 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: DFN1006-3	패키지: -	Request a Quote	100 mA	45 V	600mV @ 5mA, 100mA	1mA	110 @ 2mA, 5V	150 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-101, SOT-883	DFN1006-3
KTA1270-Y-AP	Micro Commercial Co	TRANS PNP 30V 0.5A TO92 Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Power - Max: 500 mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	패키지: -	Request a Quote	500 mA	30 V	250mV @ 10mA, 100mA	100nA (ICBO)	120 @ 100mA, 1V	500 mW	200MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92
2N5154L	Microchip Technology	TRANS NPN 80V 2A TO5AA Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	2 A	80 V	1.5V @ 500mA, 5A	50µA	70 @ 2.5A, 5V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
CMPT4403-TR-PBFREE	Central Semiconductor Corp	TRANS PNP 40V 0.6A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 350 mW Frequency - Transition: 200MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	재고51,051	600 mA	40 V	750mV @ 50mA, 500mA	-	100 @ 10mA, 1V	350 mW	200MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2N4865	Microchip Technology	NPN SILICON TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANSR2N2222AUBC	Microchip Technology	TRANS NPN 50V 0.8A 3SMD Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UBC	패키지: -	Request a Quote	800 mA	50 V	1V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UBC
MS8050-L-TP	Micro Commercial Co	Interface Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 1V Power - Max: 200 mW Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote	800 mA	40 V	500mV @ 80mA, 800mA	100nA	80 @ 100mA, 1V	200 mW	150MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
FMMT416TD	Diodes Incorporated	TRANS NPN 100V 0.5A SOT23 Transistor Type: NPN - Avalanche Mode Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Power - Max: 500 mW Frequency - Transition: 40MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	재고17,910	500 mA	100 V	100mV @ 1mA, 10mA	100nA (ICBO)	100 @ 10mA, 10V	500 mW	40MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2N3964-PBFREE	Central Semiconductor Corp	TRANS PNP 45V 0.2A TO18 Transistor Type: PNP Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V Power - Max: 360 mW Frequency - Transition: 50MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	패키지: -	재고3,819	200 mA	45 V	400mV @ 5mA, 50mA	10nA	250 @ 1mA, 5V	360 mW	50MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18

BC 846B E6327

Infineon Technologies

TRANS NPN 65V 0.1A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 330mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고2,928

100mA

65V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

330mW

250MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BC 846B B5003

Infineon Technologies

TRANS NPN 65V 0.1A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 330mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고2,912

100mA

65V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

330mW

250MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

2SA1680,T6SCMDF(J

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

패키지: TO-226-3, TO-92-3 Long Body

재고3,872

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

120 @ 100mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

PN2222ARLRAG

ON Semiconductor

TRANS NPN 40V 0.6A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고7,488

600mA

40V

1V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

625mW

300MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

JANTX2N3741

Microsemi Corporation

TRANS PNP 80V 4A TO-66

Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Power - Max: 25W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)

패키지: TO-213AA, TO-66-2

재고3,552

4A

80V

600mV @ 125mA, 1A

10µA

30 @ 250mA, 1V

25W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-213AA, TO-66-2

TO-66 (TO-213AA)

JAN2N2218

Microsemi Corporation

TRANS NPN 30V 0.8A TO39

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 800mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: TO-205AD, TO-39-3 Metal Can

재고6,560

800mA

30V

1.6V @ 50mA, 500mA

10nA

40 @ 150mA, 10V

800mW

-

-55°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

NJVMJD47T4G

ON Semiconductor

TRANS NPN 250V 1A DPAK-4

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Power - Max: 1.56W
Frequency - Transition: 10MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK-3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고3,200

1A

250V

1V @ 200mA, 1A

200µA

30 @ 300mA, 10V

1.56W

10MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK-3

30A02MH-TL-E

ON Semiconductor

TRANS PNP 30V 0.7A MCPH3

Transistor Type: PNP
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Power - Max: 600mW
Frequency - Transition: 520MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-MCPH

패키지: 3-SMD, Flat Leads

재고36,000

700mA

30V

220mV @ 10mA, 200mA

100nA (ICBO)

200 @ 10mA, 2V

600mW

520MHz

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

3-MCPH

BD535

STMicroelectronics

TRANS NPN 60V 8A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2A, 2V
Power - Max: 50W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고8,196

8A

60V

800mV @ 600mA, 6A

100µA

25 @ 2A, 2V

50W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

BCP56-16T3G

ON Semiconductor

TRANS NPN 80V 1A SOT-223

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 1.5W
Frequency - Transition: 130MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고75,600

1A

80V

500mV @ 50mA, 500mA

100nA (ICBO)

100 @ 150mA, 2V

1.5W

130MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BC856BM-TP

Micro Commercial Co

PNP PLASTIC-ENCAPSULATE BIPLOAR

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: -
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: SOT-883

패키지: SC-101, SOT-883

재고3,328

100mA

65V

500mV @ 5mA, 100mA

100nA

220 @ 2mA, 5V

-

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-101, SOT-883

SOT-883

2SB1694T106

Rohm Semiconductor

TRANS PNP 30V 1A SOT-323

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 380mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Power - Max: 200mW
Frequency - Transition: 320MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

패키지: SC-70, SOT-323

재고801,780

1A

30V

380mV @ 25mA, 500mA

100nA (ICBO)

270 @ 100mA, 2V

200mW

320MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

UMT3

PBSS4032NT,215

Nexperia USA Inc.

TRANS NPN 30V 2.6A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 2.6A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 320mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Power - Max: 1.1W
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고47,874

2.6A

30V

320mV @ 300mA, 3A

100nA

300 @ 1A, 2V

1.1W

180MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

MMBTA42LT1G

ON Semiconductor

TRANS NPN 300V 0.5A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 225mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고691,956

500mA

300V

500mV @ 2mA, 20mA

100nA (ICBO)

40 @ 30mA, 10V

225mW

50MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

2SC3383S-AA

onsemi

BIP NPN 0.2A 50V

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2N2605UB

Microchip Technology

TRANS PNP 60V 0.03A UB

Transistor Type: PNP
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500µA, 5V
Power - Max: 400 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

30 mA

60 V

300mV @ 500µA, 10mA

10nA

150 @ 500µA, 5V

400 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UB

CMPT2907A-TR-PBFREE

Central Semiconductor Corp

TRANS PNP 60V 0.6A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 350 mW
Frequency - Transition: 200MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

재고302,976

600 mA

60 V

1.6V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

350 mW

200MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

CP388X-BC108-CT

Central Semiconductor Corp

TRANS NPN 25V 0.2A DIE

Transistor Type: -
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 600 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

200 mA

25 V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

600 mW

-

-65°C ~ 150°C (TJ)

Surface Mount

Die

BC849C

Diotec Semiconductor

TRANS NPN 30V 0.1A SOT23-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 250 mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: -

재고14,874

100 mA

30 V

600mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

250 mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

BC847AL3-TP

Micro Commercial Co

Interface

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 150 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3

패키지: -

Request a Quote

100 mA

45 V

600mV @ 5mA, 100mA

1mA

110 @ 2mA, 5V

150 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-101, SOT-883

DFN1006-3

KTA1270-Y-AP

Micro Commercial Co

TRANS PNP 30V 0.5A TO92

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Power - Max: 500 mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

패키지: -

Request a Quote

500 mA

30 V

250mV @ 10mA, 100mA

100nA (ICBO)

120 @ 100mA, 1V

500 mW

200MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92

2N5154L

Microchip Technology

TRANS NPN 80V 2A TO5AA

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

Request a Quote

2 A

80 V

1.5V @ 500mA, 5A

50µA

70 @ 2.5A, 5V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

CMPT4403-TR-PBFREE

Central Semiconductor Corp

TRANS PNP 40V 0.6A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 350 mW
Frequency - Transition: 200MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

재고51,051

600 mA

40 V

750mV @ 50mA, 500mA

-

100 @ 10mA, 1V

350 mW

200MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2N4865

Microchip Technology

NPN SILICON TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

JANSR2N2222AUBC

Microchip Technology

TRANS NPN 50V 0.8A 3SMD

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UBC

패키지: -

Request a Quote

800 mA

50 V

1V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UBC

MS8050-L-TP

Micro Commercial Co

Interface

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 1V
Power - Max: 200 mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

Request a Quote

800 mA

40 V

500mV @ 80mA, 800mA

100nA

80 @ 100mA, 1V

200 mW

150MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

FMMT416TD

Diodes Incorporated

TRANS NPN 100V 0.5A SOT23

Transistor Type: NPN - Avalanche Mode
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Power - Max: 500 mW
Frequency - Transition: 40MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

재고17,910

500 mA

100 V

100mV @ 1mA, 10mA

100nA (ICBO)

100 @ 10mA, 10V

500 mW

40MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2N3964-PBFREE

Central Semiconductor Corp

TRANS PNP 45V 0.2A TO18

Transistor Type: PNP
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Power - Max: 360 mW
Frequency - Transition: 50MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

패키지: -

재고3,819

200 mA

45 V

400mV @ 5mA, 50mA

10nA

250 @ 1mA, 5V

360 mW

50MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18