페이지 518 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BULT118M	STMicroelectronics	TRANS NPN 400V 2A SOT-32 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Power - Max: 45W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: SOT-32-3	패키지: TO-225AA, TO-126-3	재고4,912	2A	400V	1.5V @ 400mA, 2A	250µA	10 @ 500mA, 5V	45W	-	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	SOT-32-3
MMBT4401_D87Z	Fairchild/ON Semiconductor	TRANS NPN 40V 0.6A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Power - Max: 350mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고2,528	600mA	40V	750mV @ 50mA, 500mA	-	100 @ 150mA, 1V	350mW	250MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
MPSA77RLRA	ON Semiconductor	TRANS PNP DARL 60V 0.5A TO-92 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고2,416	500mA	60V	1.5V @ 100µA, 100mA	500nA	10000 @ 100mA, 5V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BF493S	ON Semiconductor	TRANS PNP 350V 0.5A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 2V @ 2mA, 20mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V Power - Max: 625mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고4,144	500mA	350V	2V @ 2mA, 20mA	10nA	40 @ 10mA, 10V	625mW	50MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
MJE15032	ON Semiconductor	TRANS NPN 250V 8A TO220AB Transistor Type: NPN Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 250V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V Power - Max: 2W Frequency - Transition: 30MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고41,304	8A	250V	500mV @ 100mA, 1A	10µA (ICBO)	10 @ 2A, 5V	2W	30MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
2STA1695	STMicroelectronics	TRANS PNP 140V 10A TO-3P Transistor Type: PNP Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 700mV @ 700mA, 7A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V Power - Max: 100W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	패키지: TO-3P-3, SC-65-3	재고7,680	10A	140V	700mV @ 700mA, 7A	100nA (ICBO)	70 @ 3A, 4V	100W	20MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
BUB323ZG	ON Semiconductor	TRANS NPN DARL 350V 10A D2PAK Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V Power - Max: 150W Frequency - Transition: 2MHz Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고5,936	10A	350V	1.7V @ 250mA, 10A	100µA	500 @ 5A, 4.6V	150W	2MHz	-65°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
MJB44H11T4-A	STMicroelectronics	TRANS NPN 80V 10A D2PAK-3 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Power - Max: 50W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고7,152	10A	80V	1V @ 400mA, 8A	10µA	40 @ 4A, 1V	50W	-	150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
2SD2017	Sanken	TRANS NPN DARL 250V 6A TO220F Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 250V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 2A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V Power - Max: 35W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	패키지: TO-220-3 Full Pack	재고7,128	6A	250V	1.5V @ 2mA, 2A	100µA (ICBO)	2000 @ 2A, 2V	35W	20MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
STD901T	STMicroelectronics	TRANS NPN DARL 350V 4A DPAK Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1800 @ 2A, 2V Power - Max: 35W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고4,720	4A	350V	2V @ 20mA, 2A	100µA	1800 @ 2A, 2V	35W	-	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK
2SA2154MFV-GR(TPL3	Toshiba Semiconductor and Storage	TRANS PNP 50V 0.15A VESM Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	패키지: SOT-723	재고90,540	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	150mW	80MHz	150°C (TJ)	Surface Mount	SOT-723	VESM
MJL21193G	ON Semiconductor	TRANS PNP 250V 16A TO264 Transistor Type: PNP Current - Collector (Ic) (Max): 16A Voltage - Collector Emitter Breakdown (Max): 250V Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V Power - Max: 200W Frequency - Transition: 4MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264	패키지: TO-264-3, TO-264AA	재고9,744	16A	250V	4V @ 3.2A, 16A	100µA	25 @ 8A, 5V	200W	4MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264
BD13716S	Fairchild/ON Semiconductor	TRANS NPN 60V 1.5A TO-126 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 1.25W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	패키지: TO-225AA, TO-126-3	재고13,152	1.5A	60V	500mV @ 50mA, 500mA	100nA (ICBO)	100 @ 150mA, 2V	1.25W	-	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
NTE126A	NTE Electronics, Inc	TRANS PNP 11.5V TO18 Transistor Type: PNP Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 11.5 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V Power - Max: 150 mW Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 100°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	패키지: -	Request a Quote	-	11.5 V	600mV @ 10mA, 100mA	100µA	40 @ 100mA, 1V	150 mW	300MHz	-65°C ~ 100°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
BCP54E6327	Infineon Technologies	TRANS NPN 45V 1A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Power - Max: 2 W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: -	Request a Quote	1 A	45 V	500mV @ 50mA, 500mA	100nA (ICBO)	40 @ 150mA, 2V	2 W	100MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BFS20	Diotec Semiconductor	IC Transistor Type: NPN Current - Collector (Ic) (Max): 25 mA Voltage - Collector Emitter Breakdown (Max): 20 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 10V Power - Max: 200 mW Frequency - Transition: 450MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: -	Request a Quote	25 mA	20 V	-	100nA (ICBO)	40 @ 7mA, 10V	200 mW	450MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
BC850A-AQ	Diotec Semiconductor	IC Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 250 mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: -	Request a Quote	100 mA	45 V	600mV @ 5mA, 100mA	15nA (ICBO)	110 @ 2mA, 5V	250 mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
JANSD2N2369AUBC-TR	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 15 V Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Power - Max: 360 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UBC	패키지: -	Request a Quote	-	15 V	450mV @ 10mA, 100mA	400nA	20 @ 100mA, 1V	360 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UBC
CXT3904-TR-PBFREE	Central Semiconductor Corp	TRANS NPN 40V 0.2A SOT89 Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 1.2 W Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	재고69,672	200 mA	40 V	300mV @ 5mA, 50mA	-	100 @ 10mA, 1V	1.2 W	300MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
2N6308T1	Microchip Technology	POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 350 V Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V Power - Max: 125 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AD (TO-3)	패키지: -	Request a Quote	8 A	350 V	5V @ 2.67A, 8A	50µA	12 @ 3A, 5V	125 W	-	-65°C ~ 200°C	Through Hole	TO-204AA, TO-3	TO-204AD (TO-3)
2SD667-C-AP	Micro Commercial Co	TRANS NPN 80V 1A TO92MOD Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V Power - Max: 900 mW Frequency - Transition: 140MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package: TO-92MOD	패키지: -	Request a Quote	1 A	80 V	1V @ 50mA, 500mA	10µA (ICBO)	100 @ 150mA, 5V	900 mW	140MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body (Formed Leads)	TO-92MOD
JAN2N1481	Microchip Technology	TRANS NPN 40V 1.5A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 750mV @ 10mA, 200mA Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 4V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	1.5 A	40 V	750mV @ 10mA, 200mA	5µA (ICBO)	35 @ 200mA, 4V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
S8550-ML	MOSLEADER	25V 300mW 500mA PNP SOT-23 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANS2N5152L	Microchip Technology	TRANS NPN 80V 0.001A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 1 mA Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	1 mA	80 V	1.5V @ 500mA, 5A	1mA	30 @ 2.5A, 5V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
MNS2N3501UBP	Microchip Technology	TRANS NPN 150V 0.3A UB Transistor Type: NPN Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	300 mA	150 V	400mV @ 15mA, 150mA	10µA (ICBO)	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
2SC3114S-AA	onsemi	BIP NPN 0.15A 50V Transistor Type: NPN Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1mA, 6V Power - Max: 400 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: 3-NP	패키지: -	Request a Quote	150 mA	50 V	500mV @ 5mA, 50mA	100nA (ICBO)	140 @ 1mA, 6V	400 mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	3-NP
2SA2044-TL-E	Sanyo	PNP EPITAXIAL PLANAR SILICON Transistor Type: PNP Current - Collector (Ic) (Max): 9 A Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 340mV @ 200mA, 4A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Power - Max: 1 W Frequency - Transition: 290MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: 2-TP-FA	패키지: -	Request a Quote	9 A	30 V	340mV @ 200mA, 4A	100nA (ICBO)	200 @ 500mA, 2V	1 W	290MHz	150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	2-TP-FA
PBHV8140Z-QX	Nexperia USA Inc.	PBHV8140Z-Q/SOT223/SC-73 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 400 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 200mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 730 mW Frequency - Transition: 25MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: -	Request a Quote	1 A	400 V	250mV @ 200mA, 1A	100nA	100 @ 50mA, 10V	730 mW	25MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223

BULT118M

STMicroelectronics

TRANS NPN 400V 2A SOT-32

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Power - Max: 45W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: SOT-32-3

패키지: TO-225AA, TO-126-3

재고4,912

2A

400V

1.5V @ 400mA, 2A

250µA

10 @ 500mA, 5V

45W

-

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

SOT-32-3

MMBT4401_D87Z

Fairchild/ON Semiconductor

TRANS NPN 40V 0.6A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Power - Max: 350mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고2,528

600mA

40V

750mV @ 50mA, 500mA

-

100 @ 150mA, 1V

350mW

250MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

MPSA77RLRA

ON Semiconductor

TRANS PNP DARL 60V 0.5A TO-92

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고2,416

500mA

60V

1.5V @ 100µA, 100mA

500nA

10000 @ 100mA, 5V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BF493S

ON Semiconductor

TRANS PNP 350V 0.5A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 2V @ 2mA, 20mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Power - Max: 625mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고4,144

500mA

350V

2V @ 2mA, 20mA

10nA

40 @ 10mA, 10V

625mW

50MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

MJE15032

ON Semiconductor

TRANS NPN 250V 8A TO220AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Power - Max: 2W
Frequency - Transition: 30MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고41,304

8A

250V

500mV @ 100mA, 1A

10µA (ICBO)

10 @ 2A, 5V

2W

30MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

2STA1695

STMicroelectronics

TRANS PNP 140V 10A TO-3P

Transistor Type: PNP
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 700mA, 7A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
Power - Max: 100W
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

패키지: TO-3P-3, SC-65-3

재고7,680

10A

140V

700mV @ 700mA, 7A

100nA (ICBO)

70 @ 3A, 4V

100W

20MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

BUB323ZG

ON Semiconductor

TRANS NPN DARL 350V 10A D2PAK

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
Power - Max: 150W
Frequency - Transition: 2MHz
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고5,936

10A

350V

1.7V @ 250mA, 10A

100µA

500 @ 5A, 4.6V

150W

2MHz

-65°C ~ 175°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

MJB44H11T4-A

STMicroelectronics

TRANS NPN 80V 10A D2PAK-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Power - Max: 50W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고7,152

10A

80V

1V @ 400mA, 8A

10µA

40 @ 4A, 1V

50W

-

150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

2SD2017

Sanken

TRANS NPN DARL 250V 6A TO220F

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Power - Max: 35W
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F

패키지: TO-220-3 Full Pack

재고7,128

6A

250V

1.5V @ 2mA, 2A

100µA (ICBO)

2000 @ 2A, 2V

35W

20MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F

STD901T

STMicroelectronics

TRANS NPN DARL 350V 4A DPAK

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 2V @ 20mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1800 @ 2A, 2V
Power - Max: 35W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고4,720

4A

350V

2V @ 20mA, 2A

100µA

1800 @ 2A, 2V

35W

-

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

2SA2154MFV-GR(TPL3

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A VESM

Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

패키지: SOT-723

재고90,540

150mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

150mW

80MHz

150°C (TJ)

Surface Mount

SOT-723

VESM

MJL21193G

ON Semiconductor

TRANS PNP 250V 16A TO264

Transistor Type: PNP
Current - Collector (Ic) (Max): 16A
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Power - Max: 200W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264

패키지: TO-264-3, TO-264AA

재고9,744

16A

250V

4V @ 3.2A, 16A

100µA

25 @ 8A, 5V

200W

4MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-264-3, TO-264AA

TO-264

BD13716S

Fairchild/ON Semiconductor

TRANS NPN 60V 1.5A TO-126

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 1.25W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

패키지: TO-225AA, TO-126-3

재고13,152

1.5A

60V

500mV @ 50mA, 500mA

100nA (ICBO)

100 @ 150mA, 2V

1.25W

-

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

NTE126A

NTE Electronics, Inc

TRANS PNP 11.5V TO18

Transistor Type: PNP
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 11.5 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Power - Max: 150 mW
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 100°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

패키지: -

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-

11.5 V

600mV @ 10mA, 100mA

100µA

40 @ 100mA, 1V

150 mW

300MHz

-65°C ~ 100°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

BCP54E6327

Infineon Technologies

TRANS NPN 45V 1A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 2 W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: -

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1 A

45 V

500mV @ 50mA, 500mA

100nA (ICBO)

40 @ 150mA, 2V

2 W

100MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BFS20

Diotec Semiconductor

IC

Transistor Type: NPN
Current - Collector (Ic) (Max): 25 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 10V
Power - Max: 200 mW
Frequency - Transition: 450MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: -

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25 mA

20 V

-

100nA (ICBO)

40 @ 7mA, 10V

200 mW

450MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

BC850A-AQ

Diotec Semiconductor

IC

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 250 mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: -

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100 mA

45 V

600mV @ 5mA, 100mA

15nA (ICBO)

110 @ 2mA, 5V

250 mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

JANSD2N2369AUBC-TR

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 15 V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Power - Max: 360 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UBC

패키지: -

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-

15 V

450mV @ 10mA, 100mA

400nA

20 @ 100mA, 1V

360 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UBC

CXT3904-TR-PBFREE

Central Semiconductor Corp

TRANS NPN 40V 0.2A SOT89

Transistor Type: NPN
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 1.2 W
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

재고69,672

200 mA

40 V

300mV @ 5mA, 50mA

-

100 @ 10mA, 1V

1.2 W

300MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

2N6308T1

Microchip Technology

POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Power - Max: 125 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AD (TO-3)

패키지: -

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8 A

350 V

5V @ 2.67A, 8A

50µA

12 @ 3A, 5V

125 W

-

-65°C ~ 200°C

Through Hole

TO-204AA, TO-3

TO-204AD (TO-3)

2SD667-C-AP

Micro Commercial Co

TRANS NPN 80V 1A TO92MOD

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V
Power - Max: 900 mW
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-92MOD

패키지: -

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1 A

80 V

1V @ 50mA, 500mA

10µA (ICBO)

100 @ 150mA, 5V

900 mW

140MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body (Formed Leads)

TO-92MOD

JAN2N1481

Microchip Technology

TRANS NPN 40V 1.5A TO5

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 4V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

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1.5 A

40 V

750mV @ 10mA, 200mA

5µA (ICBO)

35 @ 200mA, 4V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

S8550-ML

MOSLEADER

25V 300mW 500mA PNP SOT-23

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

JANS2N5152L

Microchip Technology

TRANS NPN 80V 0.001A TO5

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

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1 mA

80 V

1.5V @ 500mA, 5A

1mA

30 @ 2.5A, 5V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

MNS2N3501UBP

Microchip Technology

TRANS NPN 150V 0.3A UB

Transistor Type: NPN
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

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300 mA

150 V

400mV @ 15mA, 150mA

10µA (ICBO)

100 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

2SC3114S-AA

onsemi

BIP NPN 0.15A 50V

Transistor Type: NPN
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1mA, 6V
Power - Max: 400 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: 3-NP

패키지: -

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150 mA

50 V

500mV @ 5mA, 50mA

100nA (ICBO)

140 @ 1mA, 6V

400 mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

3-NP

2SA2044-TL-E

Sanyo

PNP EPITAXIAL PLANAR SILICON

Transistor Type: PNP
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 340mV @ 200mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 1 W
Frequency - Transition: 290MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: 2-TP-FA

패키지: -

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9 A

30 V

340mV @ 200mA, 4A

100nA (ICBO)

200 @ 500mA, 2V

1 W

290MHz

150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

2-TP-FA

PBHV8140Z-QX

Nexperia USA Inc.

PBHV8140Z-Q/SOT223/SC-73

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 730 mW
Frequency - Transition: 25MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: -

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1 A

400 V

250mV @ 200mA, 1A

100nA

100 @ 50mA, 10V

730 mW

25MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223