페이지 524 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BC 808-40W H6327	Infineon Technologies	TRANS PNP 25V 0.5A SOT323 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 250mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	패키지: SC-70, SOT-323	재고7,488	500mA	25V	700mV @ 50mA, 500mA	100nA (ICBO)	250 @ 100mA, 1V	250mW	200MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BC858CWE6327BTSA1	Infineon Technologies	TRANS PNP 30V 0.1A SOT-323 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	패키지: SC-70, SOT-323	재고2,800	100mA	30V	650mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	250mW	250MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323-3
JANTX2N3997	Microsemi Corporation	TRANS NPN 80V 10A TO111 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: TO-111-4, Stud Supplier Device Package: TO-111	패키지: TO-111-4, Stud	재고7,024	10A	80V	2V @ 500mA, 5A	10µA	80 @ 1A, 2V	2W	-	-65°C ~ 200°C (TJ)	Chassis, Stud Mount	TO-111-4, Stud	TO-111
ZTX749A_J61Z	Fairchild/ON Semiconductor	TRANS PNP 35V 2A E-LINE Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 35V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고7,488	2A	35V	500mV @ 200mA, 2A	100nA (ICBO)	100 @ 1A, 2V	1W	100MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
PN3638A_D26Z	Fairchild/ON Semiconductor	TRANS PNP 25V 0.8A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA Current - Collector Cutoff (Max): 35nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 2V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고2,080	800mA	25V	1V @ 30mA, 300mA	35nA	20 @ 300mA, 2V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MPS750RLRAG	ON Semiconductor	TRANS PNP 40V 2A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V Power - Max: 625mW Frequency - Transition: 75MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고6,320	2A	40V	500mV @ 200mA, 2A	100nA (ICBO)	75 @ 1A, 2V	625mW	75MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MPS6726G	ON Semiconductor	TRANS PNP 30V 1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V Power - Max: 1W Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92	패키지: TO-226-3, TO-92-3 Long Body	재고9,192	1A	30V	500mV @ 100mA, 1A	100nA (ICBO)	50 @ 1A, 1V	1W	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92
ZTX1149ASTOB	Diodes Incorporated	TRANS PNP 25V 3A E-LINE Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 300mV @ 70mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 135MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3, Formed Leads	재고3,312	3A	25V	300mV @ 70mA, 3A	100nA	250 @ 500mA, 2V	1W	135MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
FZT955TC	Diodes Incorporated	TRANS PNP 140V 4A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Power - Max: 3W Frequency - Transition: 110MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고2,656	4A	140V	370mV @ 300mA, 3A	50nA (ICBO)	100 @ 1A, 5V	3W	110MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BD678AG	ON Semiconductor	TRANS PNP DARL 60V 4A TO225 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-225AA	패키지: TO-225AA, TO-126-3	재고6,624	4A	60V	2.8V @ 40mA, 2A	500µA	750 @ 2A, 3V	40W	-	-55°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-225AA
RXT2907AT100	Rohm Semiconductor	TRANS NPN MPT3 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	패키지: TO-243AA	재고635,520	600mA	60V	1.6V @ 50mA, 500mA	100nA	100 @ 150mA, 10V	500mW	200MHz	150°C (TJ)	Surface Mount	TO-243AA	MPT3
DCP69-13	Diodes Incorporated	TRANS PNP 20V 1A SOT-223 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Power - Max: 1W Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고95,112	1A	20V	500mV @ 100mA, 1A	100nA (ICBO)	85 @ 500mA, 1V	1W	200MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
2PD601ART,235	Nexperia USA Inc.	TRANS NPN 50V 0.1A SOT23-3 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V Power - Max: 250mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고3,328	100mA	50V	250mV @ 10mA, 100mA	10nA (ICBO)	210 @ 2mA, 10V	250mW	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BC817-16-TP	Micro Commercial Co	TRANS NPN 45V 0.8A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 310mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고4,256	800mA	45V	700mV @ 50mA, 500mA	100nA	100 @ 100mA, 1V	310mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
NTE2331	NTE Electronics, Inc	TRANS NPN 800V 6A TO3PML Transistor Type: NPN Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 800 V Vce Saturation (Max) @ Ib, Ic: 5V @ 1A, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 1A, 5V Power - Max: 60 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-3PML	패키지: -	Request a Quote	6 A	800 V	5V @ 1A, 5A	1mA	8 @ 1A, 5V	60 W	-	150°C (TJ)	Through Hole	TO-3P-3 Full Pack	TO-3PML
FMMT614QTA	Diodes Incorporated	TRANS NPN DARL 100V 0.5A SOT23-3 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15000 @ 100mA, 5V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	재고9,000	500 mA	100 V	1V @ 5mA, 500mA	10µA	15000 @ 100mA, 5V	500 mW	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2SD1963T100Q	Rohm Semiconductor	TRANS GP BJT NPN 20V 3A 4-PIN(3+ Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 20 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 25mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	패키지: -	Request a Quote	3 A	20 V	300mV @ 2.5mA, 25mA	500nA (ICBO)	180 @ 2mA, 6V	500 mW	-	150°C (TJ)	Surface Mount	TO-243AA	MPT3
BD772-Y-TP	Micro Commercial Co	Interface Transistor Type: PNP Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 2V Power - Max: 500 mW Frequency - Transition: 80MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	Request a Quote	3 A	30 V	500mV @ 200mA, 2A	10µA	60 @ 1A, 2V	500 mW	80MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
BCV27-TP	Micro Commercial Co	Interface Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Power - Max: 300 mW Frequency - Transition: 170MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote	500 mA	30 V	1V @ 100µA, 100mA	100nA (ICBO)	20000 @ 100mA, 5V	300 mW	170MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
JANTXV2N1715S	Microchip Technology	TRANS NPN 100V 0.75A TO39 Transistor Type: NPN Current - Collector (Ic) (Max): 750 mA Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	750 mA	100 V	-	-	-	-	-	175°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
MPS3415-TIN-LEAD	Central Semiconductor Corp	TRANS NPN 25V 0.5A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V Power - Max: 625 mW Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	Request a Quote	500 mA	25 V	300mV @ 3mA, 50mA	100nA (ICBO)	180 @ 2mA, 4.5V	625 mW	-	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
JANS2N5002	Microchip Technology	TRANS NPN 80V 10A TO59 Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Power - Max: 2 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Stud Mount Package / Case: TO-210AA, TO-59-4, Stud Supplier Device Package: TO-59	패키지: -	Request a Quote	10 A	80 V	1.5V @ 500mA, 5A	50µA	30 @ 2.5A, 5V	2 W	-	-65°C ~ 200°C (TJ)	Stud Mount	TO-210AA, TO-59-4, Stud	TO-59
MMBT2222AQ-7-F	Diodes Incorporated	SS MID-PERF TRANSISTOR SOT23 T&R Transistor Type: NPN Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 310 mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	재고9,000	600 mA	40 V	1V @ 50mA, 500mA	10nA	100 @ 150mA, 10V	310 mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BCP56-16-QX	Nexperia USA Inc.	TRANS NPN 80V 1A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 650 mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: -	Request a Quote	1 A	80 V	500mV @ 50mA, 500mA	100nA (ICBO)	100 @ 150mA, 2V	650 mW	180MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
2N5333	Microchip Technology	TRANS PNP 80V 2A TO5 Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 1 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	2 A	80 V	-	-	-	1 W	-	-	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N6714	onsemi	TRANS NPN 30V 2A TO237 Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-237AA Supplier Device Package: TO-237	패키지: -	Request a Quote	2 A	30 V	-	-	-	-	-	-	Through Hole	TO-237AA	TO-237
2SD2227STPV	Rohm Semiconductor	TRANS GP BJT NPN 50V 0.15A 3-PIN Transistor Type: NPN Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 300nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Power - Max: 300 mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Supplier Device Package: SPT	패키지: -	Request a Quote	150 mA	50 V	800mV @ 200mA, 2A	300nA	120 @ 500mA, 3V	300 mW	-	150°C (TJ)	Through Hole	SC-72 Formed Leads	SPT
PMBTA42-QVL	Nexperia USA Inc.	PMBTA42-Q/SOT23/TO-236AB Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Power - Max: 250 mW Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	패키지: -	Request a Quote	100 mA	300 V	500mV @ 2mA, 20mA	100nA (ICBO)	40 @ 30mA, 10V	250 mW	50MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB

BC 808-40W H6327

Infineon Technologies

TRANS PNP 25V 0.5A SOT323

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 250mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

재고7,488

500mA

25V

700mV @ 50mA, 500mA

100nA (ICBO)

250 @ 100mA, 1V

250mW

200MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

PG-SOT323-3

BC858CWE6327BTSA1

Infineon Technologies

TRANS PNP 30V 0.1A SOT-323

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

재고2,800

100mA

30V

650mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

250mW

250MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

PG-SOT323-3

JANTX2N3997

Microsemi Corporation

TRANS NPN 80V 10A TO111

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: TO-111-4, Stud
Supplier Device Package: TO-111

패키지: TO-111-4, Stud

재고7,024

10A

80V

2V @ 500mA, 5A

10µA

80 @ 1A, 2V

2W

-

-65°C ~ 200°C (TJ)

Chassis, Stud Mount

TO-111-4, Stud

TO-111

ZTX749A_J61Z

Fairchild/ON Semiconductor

TRANS PNP 35V 2A E-LINE

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 35V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고7,488

2A

35V

500mV @ 200mA, 2A

100nA (ICBO)

100 @ 1A, 2V

1W

100MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

PN3638A_D26Z

Fairchild/ON Semiconductor

TRANS PNP 25V 0.8A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 2V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고2,080

800mA

25V

1V @ 30mA, 300mA

35nA

20 @ 300mA, 2V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MPS750RLRAG

ON Semiconductor

TRANS PNP 40V 2A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Power - Max: 625mW
Frequency - Transition: 75MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고6,320

2A

40V

500mV @ 200mA, 2A

100nA (ICBO)

75 @ 1A, 2V

625mW

75MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MPS6726G

ON Semiconductor

TRANS PNP 30V 1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92

패키지: TO-226-3, TO-92-3 Long Body

재고9,192

1A

30V

500mV @ 100mA, 1A

100nA (ICBO)

50 @ 1A, 1V

1W

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92

ZTX1149ASTOB

Diodes Incorporated

TRANS PNP 25V 3A E-LINE

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 70mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 135MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3, Formed Leads

재고3,312

3A

25V

300mV @ 70mA, 3A

100nA

250 @ 500mA, 2V

1W

135MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

FZT955TC

Diodes Incorporated

TRANS PNP 140V 4A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Power - Max: 3W
Frequency - Transition: 110MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고2,656

4A

140V

370mV @ 300mA, 3A

50nA (ICBO)

100 @ 1A, 5V

3W

110MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BD678AG

ON Semiconductor

TRANS PNP DARL 60V 4A TO225

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Power - Max: 40W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA

패키지: TO-225AA, TO-126-3

재고6,624

4A

60V

2.8V @ 40mA, 2A

500µA

750 @ 2A, 3V

40W

-

-55°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-225AA

RXT2907AT100

Rohm Semiconductor

TRANS NPN MPT3

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3

패키지: TO-243AA

재고635,520

600mA

60V

1.6V @ 50mA, 500mA

100nA

100 @ 150mA, 10V

500mW

200MHz

150°C (TJ)

Surface Mount

TO-243AA

MPT3

DCP69-13

Diodes Incorporated

TRANS PNP 20V 1A SOT-223

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Power - Max: 1W
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고95,112

1A

20V

500mV @ 100mA, 1A

100nA (ICBO)

85 @ 500mA, 1V

1W

200MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

2PD601ART,235

Nexperia USA Inc.

TRANS NPN 50V 0.1A SOT23-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고3,328

100mA

50V

250mV @ 10mA, 100mA

10nA (ICBO)

210 @ 2mA, 10V

250mW

100MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BC817-16-TP

Micro Commercial Co

TRANS NPN 45V 0.8A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 310mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고4,256

800mA

45V

700mV @ 50mA, 500mA

100nA

100 @ 100mA, 1V

310mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

NTE2331

NTE Electronics, Inc

TRANS NPN 800V 6A TO3PML

Transistor Type: NPN
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Vce Saturation (Max) @ Ib, Ic: 5V @ 1A, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 1A, 5V
Power - Max: 60 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-3PML

패키지: -

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6 A

800 V

5V @ 1A, 5A

1mA

8 @ 1A, 5V

60 W

-

150°C (TJ)

Through Hole

TO-3P-3 Full Pack

TO-3PML

FMMT614QTA

Diodes Incorporated

TRANS NPN DARL 100V 0.5A SOT23-3

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15000 @ 100mA, 5V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

재고9,000

500 mA

100 V

1V @ 5mA, 500mA

10µA

15000 @ 100mA, 5V

500 mW

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2SD1963T100Q

Rohm Semiconductor

TRANS GP BJT NPN 20V 3A 4-PIN(3+

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3

패키지: -

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3 A

20 V

300mV @ 2.5mA, 25mA

500nA (ICBO)

180 @ 2mA, 6V

500 mW

-

150°C (TJ)

Surface Mount

TO-243AA

MPT3

BD772-Y-TP

Micro Commercial Co

Interface

Transistor Type: PNP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 2V
Power - Max: 500 mW
Frequency - Transition: 80MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

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3 A

30 V

500mV @ 200mA, 2A

10µA

60 @ 1A, 2V

500 mW

80MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

BCV27-TP

Micro Commercial Co

Interface

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 300 mW
Frequency - Transition: 170MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

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500 mA

30 V

1V @ 100µA, 100mA

100nA (ICBO)

20000 @ 100mA, 5V

300 mW

170MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

JANTXV2N1715S

Microchip Technology

TRANS NPN 100V 0.75A TO39

Transistor Type: NPN
Current - Collector (Ic) (Max): 750 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

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750 mA

100 V

-

175°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

MPS3415-TIN-LEAD

Central Semiconductor Corp

TRANS NPN 25V 0.5A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V
Power - Max: 625 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

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500 mA

25 V

300mV @ 3mA, 50mA

100nA (ICBO)

180 @ 2mA, 4.5V

625 mW

-

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

JANS2N5002

Microchip Technology

TRANS NPN 80V 10A TO59

Transistor Type: NPN
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Power - Max: 2 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: TO-210AA, TO-59-4, Stud
Supplier Device Package: TO-59

패키지: -

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10 A

80 V

1.5V @ 500mA, 5A

50µA

30 @ 2.5A, 5V

2 W

-

-65°C ~ 200°C (TJ)

Stud Mount

TO-210AA, TO-59-4, Stud

TO-59

MMBT2222AQ-7-F

Diodes Incorporated

SS MID-PERF TRANSISTOR SOT23 T&R

Transistor Type: NPN
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 310 mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

재고9,000

600 mA

40 V

1V @ 50mA, 500mA

10nA

100 @ 150mA, 10V

310 mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BCP56-16-QX

Nexperia USA Inc.

TRANS NPN 80V 1A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 650 mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: -

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1 A

80 V

500mV @ 50mA, 500mA

100nA (ICBO)

100 @ 150mA, 2V

650 mW

180MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

2N5333

Microchip Technology

TRANS PNP 80V 2A TO5

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

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2 A

80 V

-

1 W

-

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

2N6714

onsemi

TRANS NPN 30V 2A TO237

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-237AA
Supplier Device Package: TO-237

패키지: -

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2 A

30 V

-

Through Hole

TO-237AA

TO-237

2SD2227STPV

Rohm Semiconductor

TRANS GP BJT NPN 50V 0.15A 3-PIN

Transistor Type: NPN
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 300nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Power - Max: 300 mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT

패키지: -

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150 mA

50 V

800mV @ 200mA, 2A

300nA

120 @ 500mA, 3V

300 mW

-

150°C (TJ)

Through Hole

SC-72 Formed Leads

SPT

PMBTA42-QVL

Nexperia USA Inc.

PMBTA42-Q/SOT23/TO-236AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 250 mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB

패키지: -

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100 mA

300 V

500mV @ 2mA, 20mA

100nA (ICBO)

40 @ 30mA, 10V

250 mW

50MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB