페이지 539 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
TIPL761C-S	Bourns Inc.	TRANS NPN 550V 4A SOT-93 Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 550V Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 2A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Power - Max: 100W Frequency - Transition: 12MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: SOT-93	패키지: TO-218-3	재고2,496	4A	550V	1V @ 400mA, 2A	50µA	20 @ 500mA, 5V	100W	12MHz	-	Through Hole	TO-218-3	SOT-93
NSCT3906LT1G	ON Semiconductor	TRANS PNP 40V 0.2A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 225mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고4,992	200mA	40V	400mV @ 5mA, 50mA	-	100 @ 10mA, 1V	225mW	250MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
MPS2222RLRPG	ON Semiconductor	TRANS NPN 30V 0.6A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 625mW Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고7,200	600mA	30V	1.6V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	625mW	250MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
TIP142FTU	Fairchild/ON Semiconductor	TRANS NPN DARL 100V 10A TO-3P Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 125W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-3PF-3	패키지: TO-3P-3 Full Pack	재고7,440	10A	100V	3V @ 40mA, 10A	2mA	1000 @ 5A, 4V	125W	-	150°C (TJ)	Through Hole	TO-3P-3 Full Pack	TO-3PF-3
KSC4010RTU	Fairchild/ON Semiconductor	TRANS NPN 120V 6A TO-3P Transistor Type: NPN Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 500mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V Power - Max: 60W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P-3, SC-65-3	패키지: TO-3P-3, SC-65-3	재고5,760	6A	120V	2.5V @ 500mA, 5A	10µA (ICBO)	55 @ 1A, 5V	60W	30MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3
TIP31B	Central Semiconductor Corp	THROUGH-HOLE TRANSISTOR-BIPOLAR Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Power - Max: 40W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고53,292	3A	80V	1.2V @ 375mA, 3A	300µA	25 @ 1A, 4V	40W	3MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
2DB1188P-13	Diodes Incorporated	TRANS PNP 32V 2A SOT89-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 32V Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고73,008	2A	32V	800mV @ 200mA, 2A	100nA (ICBO)	82 @ 500mA, 3V	1W	120MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
SBCW66GLT1G	ON Semiconductor	TRANS NPN 45V 0.8A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고2,208	800mA	45V	700mV @ 50mA, 500mA	20nA	160 @ 100mA, 1V	300mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
2PA1774RMB,315	Nexperia USA Inc.	TRANS PNP 40V 0.1A DFN1006B-3 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V Power - Max: 250mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: DFN1006-3	패키지: SC-101, SOT-883	재고2,208	100mA	40V	200mV @ 5mA, 50mA	100nA (ICBO)	180 @ 1mA, 6V	250mW	100MHz	150°C (TJ)	Surface Mount	SC-101, SOT-883	DFN1006-3
BC849BW,115	Nexperia USA Inc.	TRANS NPN 30V 0.1A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고5,232	100mA	30V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	200mW	100MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
BC807-16 RFG	TSC America Inc.	TRANSISTOR, PNP, -45V, -0.5A, 10 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고7,184	500mA	45V	700mV @ 50mA, 500mA	200nA (ICBO)	100 @ 100mA, 1V	300mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
BC549B B1G	TSC America Inc.	TRANSISTOR, NPN, 30V, 0.1A, 200A Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고3,280	100mA	30V	-	15nA (ICBO)	200 @ 2mA, 5V	500mW	-	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
BF621,115	Nexperia USA Inc.	TRANS PNP 300V 0.05A SOT89 Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 30mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V Power - Max: 1.1W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고3,408	50mA	300V	800mV @ 5mA, 30mA	10nA (ICBO)	50 @ 25mA, 20V	1.1W	60MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
PBHV9560ZX	Nexperia USA Inc.	IC TRANS PNP 600V 0.5A SC73 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 600V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 10V Power - Max: 650mW Frequency - Transition: 38MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고4,816	500mA	600V	250mV @ 5mA, 50mA	100nA	70 @ 50mA, 10V	650mW	38MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
ZTX653	Diodes Incorporated	TRANS NPN 100V 2A E-LINE Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 1W Frequency - Transition: 175MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3	재고112,968	2A	100V	500mV @ 200mA, 2A	100nA (ICBO)	-	1W	175MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3	E-Line (TO-92 compatible)
ZTX553	Diodes Incorporated	TRANS PNP 100V 1A E-LINE Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3	재고56,640	1A	100V	250mV @ 15mA, 150mA	100nA (ICBO)	40 @ 150mA, 10V	1W	150MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3	E-Line (TO-92 compatible)
BC807-40-TP	Micro Commercial Co	TRANS PNP 45V 0.5A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고74,322	500mA	45V	700mV @ 50mA, 500mA	200nA	250 @ 100mA, 1V	300mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
MMBT2907AWT1G	ON Semiconductor	TRANS PNP 60V 0.6A SOT323 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 150mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 (SOT323)	패키지: SC-70, SOT-323	재고2,626,932	600mA	60V	1.6V @ 50mA, 500mA	-	100 @ 150mA, 10V	150mW	200MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70-3 (SOT323)
KSA812YMTF-FS	Fairchild Semiconductor	TRANS PNP 50V 0.1A SOT23-3 Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V Power - Max: 150 mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	100 mA	50 V	300mV @ 10mA, 100mA	100nA (ICBO)	135 @ 1mA, 6V	150 mW	180MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BC846AQCZ	Nexperia USA Inc.	TRANS 65V 0.1A DFN1412D-3 Transistor Type: - Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 360 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1412D-3	패키지: -	Request a Quote	100 mA	65 V	400mV @ 5mA, 100mA	15nA (ICBO)	110 @ 2mA, 5V	360 mW	100MHz	150°C (TJ)	Surface Mount, Wettable Flank	3-XDFN Exposed Pad	DFN1412D-3
JANTX2N3250AUB-TR	Microchip Technology	TRANS PNP 60V 0.2A UB Transistor Type: PNP Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Power - Max: 360 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	200 mA	60 V	500mV @ 5mA, 50mA	10µA (ICBO)	50 @ 10mA, 1V	360 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UB
2SD2224-E	onsemi	NPN 7A 60V DARLINGTON Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JAN2N6693	Microchip Technology	TRANS NPN 400V 15A TO61 Transistor Type: NPN Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 400 V Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A Current - Collector Cutoff (Max): 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V Power - Max: 3 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Stud Mount Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud Supplier Device Package: TO-61	패키지: -	Request a Quote	15 A	400 V	1V @ 3A, 15A	1mA (ICBO)	15 @ 1A, 3V	3 W	-	-65°C ~ 200°C (TJ)	Stud Mount	TO-211MA, TO-210AC, TO-61-4, Stud	TO-61
2N3741	Microchip Technology	PNP TRANSISTOR Transistor Type: PNP Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V Power - Max: 25 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	패키지: -	재고1,461	4 A	80 V	600mV @ 125mA, 1A	10µA	40 @ 100mA, 1V	25 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-213AA, TO-66-2	TO-66 (TO-213AA)
2N6303	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 750mV @ 150mA, 1.5A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 500mA, 1V Power - Max: 1 W Frequency - Transition: 60MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	3 A	80 V	750mV @ 150mA, 1.5A	1µA	35 @ 500mA, 1V	1 W	60MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2SC5245-4-TL-E	onsemi	BIP NPN 30MA 10V FT=8G Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANSR2N2222AUB-E10	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	800 mA	50 V	1V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
2C5337	Microchip Technology	POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

TIPL761C-S

Bourns Inc.

TRANS NPN 550V 4A SOT-93

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 550V
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 2A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Power - Max: 100W
Frequency - Transition: 12MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: SOT-93

패키지: TO-218-3

재고2,496

4A

550V

1V @ 400mA, 2A

50µA

20 @ 500mA, 5V

100W

12MHz

-

Through Hole

TO-218-3

SOT-93

NSCT3906LT1G

ON Semiconductor

TRANS PNP 40V 0.2A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 225mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고4,992

200mA

40V

400mV @ 5mA, 50mA

-

100 @ 10mA, 1V

225mW

250MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

MPS2222RLRPG

ON Semiconductor

TRANS NPN 30V 0.6A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 625mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고7,200

600mA

30V

1.6V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

625mW

250MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

TIP142FTU

Fairchild/ON Semiconductor

TRANS NPN DARL 100V 10A TO-3P

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Power - Max: 125W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-3PF-3

패키지: TO-3P-3 Full Pack

재고7,440

10A

100V

3V @ 40mA, 10A

2mA

1000 @ 5A, 4V

125W

-

150°C (TJ)

Through Hole

TO-3P-3 Full Pack

TO-3PF-3

KSC4010RTU

Fairchild/ON Semiconductor

TRANS NPN 120V 6A TO-3P

Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Power - Max: 60W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P-3, SC-65-3

패키지: TO-3P-3, SC-65-3

재고5,760

6A

120V

2.5V @ 500mA, 5A

10µA (ICBO)

55 @ 1A, 5V

60W

30MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TIP31B

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-BIPOLAR

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Power - Max: 40W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고53,292

3A

80V

1.2V @ 375mA, 3A

300µA

25 @ 1A, 4V

40W

3MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

2DB1188P-13

Diodes Incorporated

TRANS PNP 32V 2A SOT89-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고73,008

2A

32V

800mV @ 200mA, 2A

100nA (ICBO)

82 @ 500mA, 3V

1W

120MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

SBCW66GLT1G

ON Semiconductor

TRANS NPN 45V 0.8A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고2,208

800mA

45V

700mV @ 50mA, 500mA

20nA

160 @ 100mA, 1V

300mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

2PA1774RMB,315

Nexperia USA Inc.

TRANS PNP 40V 0.1A DFN1006B-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3

패키지: SC-101, SOT-883

재고2,208

100mA

40V

200mV @ 5mA, 50mA

100nA (ICBO)

180 @ 1mA, 6V

250mW

100MHz

150°C (TJ)

Surface Mount

SC-101, SOT-883

DFN1006-3

BC849BW,115

Nexperia USA Inc.

TRANS NPN 30V 0.1A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고5,232

100mA

30V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

200mW

100MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

BC807-16 RFG

TSC America Inc.

TRANSISTOR, PNP, -45V, -0.5A, 10

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고7,184

500mA

45V

700mV @ 50mA, 500mA

200nA (ICBO)

100 @ 100mA, 1V

300mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

BC549B B1G

TSC America Inc.

TRANSISTOR, NPN, 30V, 0.1A, 200A

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고3,280

100mA

30V

-

15nA (ICBO)

200 @ 2mA, 5V

500mW

-

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

BF621,115

Nexperia USA Inc.

TRANS PNP 300V 0.05A SOT89

Transistor Type: PNP
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Power - Max: 1.1W
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고3,408

50mA

300V

800mV @ 5mA, 30mA

10nA (ICBO)

50 @ 25mA, 20V

1.1W

60MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

PBHV9560ZX

Nexperia USA Inc.

IC TRANS PNP 600V 0.5A SC73

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 600V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 10V
Power - Max: 650mW
Frequency - Transition: 38MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고4,816

500mA

600V

250mV @ 5mA, 50mA

100nA

70 @ 50mA, 10V

650mW

38MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

ZTX653

Diodes Incorporated

TRANS NPN 100V 2A E-LINE

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 1W
Frequency - Transition: 175MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3

재고112,968

2A

100V

500mV @ 200mA, 2A

100nA (ICBO)

-

1W

175MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3

E-Line (TO-92 compatible)

ZTX553

Diodes Incorporated

TRANS PNP 100V 1A E-LINE

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3

재고56,640

1A

100V

250mV @ 15mA, 150mA

100nA (ICBO)

40 @ 150mA, 10V

1W

150MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3

E-Line (TO-92 compatible)

BC807-40-TP

Micro Commercial Co

TRANS PNP 45V 0.5A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고74,322

500mA

45V

700mV @ 50mA, 500mA

200nA

250 @ 100mA, 1V

300mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

MMBT2907AWT1G

ON Semiconductor

TRANS PNP 60V 0.6A SOT323

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 150mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)

패키지: SC-70, SOT-323

재고2,626,932

600mA

60V

1.6V @ 50mA, 500mA

-

100 @ 150mA, 10V

150mW

200MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70-3 (SOT323)

KSA812YMTF-FS

Fairchild Semiconductor

TRANS PNP 50V 0.1A SOT23-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Power - Max: 150 mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

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100 mA

50 V

300mV @ 10mA, 100mA

100nA (ICBO)

135 @ 1mA, 6V

150 mW

180MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BC846AQCZ

Nexperia USA Inc.

TRANS 65V 0.1A DFN1412D-3

Transistor Type: -
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 360 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1412D-3

패키지: -

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100 mA

65 V

400mV @ 5mA, 100mA

15nA (ICBO)

110 @ 2mA, 5V

360 mW

100MHz

150°C (TJ)

Surface Mount, Wettable Flank

3-XDFN Exposed Pad

DFN1412D-3

JANTX2N3250AUB-TR

Microchip Technology

TRANS PNP 60V 0.2A UB

Transistor Type: PNP
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Power - Max: 360 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB

패키지: -

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200 mA

60 V

500mV @ 5mA, 50mA

10µA (ICBO)

50 @ 10mA, 1V

360 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UB

2SD2224-E

onsemi

NPN 7A 60V DARLINGTON

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

JAN2N6693

Microchip Technology

TRANS NPN 400V 15A TO61

Transistor Type: NPN
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 3A, 15A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V
Power - Max: 3 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Supplier Device Package: TO-61

패키지: -

Request a Quote

15 A

400 V

1V @ 3A, 15A

1mA (ICBO)

15 @ 1A, 3V

3 W

-

-65°C ~ 200°C (TJ)

Stud Mount

TO-211MA, TO-210AC, TO-61-4, Stud

TO-61

2N3741

Microchip Technology

PNP TRANSISTOR

Transistor Type: PNP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Power - Max: 25 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)

패키지: -

재고1,461

4 A

80 V

600mV @ 125mA, 1A

10µA

40 @ 100mA, 1V

25 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-213AA, TO-66-2

TO-66 (TO-213AA)

2N6303

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 500mA, 1V
Power - Max: 1 W
Frequency - Transition: 60MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

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3 A

80 V

750mV @ 150mA, 1.5A

1µA

35 @ 500mA, 1V

1 W

60MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

2SC5245-4-TL-E

onsemi

BIP NPN 30MA 10V FT=8G

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

JANSR2N2222AUB-E10

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

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800 mA

50 V

1V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

2C5337

Microchip Technology

POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-