페이지 548 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SD2695(T6CNO,A,F)	Toshiba Semiconductor and Storage	TRANS NPN 2A 60V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	패키지: TO-226-3, TO-92-3 Long Body	재고2,032	2A	60V	1.5V @ 1mA, 1A	10µA (ICBO)	2000 @ 1A, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
JAN2N1486	Microsemi Corporation	TRANS NPN 55V 3A Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 55V Vce Saturation (Max) @ Ib, Ic: 750mV @ 40mA, 750mA Current - Collector Cutoff (Max): 15µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 750mA, 4V Power - Max: 1.75W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-233AA, TO-8-3 Lens Top Metal Can Supplier Device Package: TO-8	패키지: TO-233AA, TO-8-3 Lens Top Metal Can	재고5,456	3A	55V	750mV @ 40mA, 750mA	15µA (ICBO)	35 @ 750mA, 4V	1.75W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-233AA, TO-8-3 Lens Top Metal Can	TO-8
BD244C-S	Bourns Inc.	TRANS PNP 100V 6A Transistor Type: PNP Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고5,120	6A	100V	1.5V @ 1A, 6A	700µA	15 @ 3A, 4V	2W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
TIP29E-S	Bourns Inc.	TRANS NPN 140V 1A Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 4V Power - Max: 2W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고3,472	1A	140V	700mV @ 125mA, 1A	300µA	40 @ 200mA, 4V	2W	-	-	Through Hole	TO-220-3	TO-220
ZTX1056ASTOB	Diodes Incorporated	TRANS NPN 160V 3A E-LINE Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 3A Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 10V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3, Formed Leads	재고3,744	3A	160V	300mV @ 200mA, 3A	10nA	300 @ 500mA, 10V	1W	120MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
FCX1147ATA	Diodes Incorporated	TRANS PNP 12V 3A SOT-89 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 5A Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V Power - Max: 2W Frequency - Transition: 115MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고60,000	3A	12V	400mV @ 50mA, 5A	10nA	250 @ 500mA, 2V	2W	115MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
PBSS3540E,115	NXP	TRANS PNP 40V 0.5A SC75 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V Power - Max: 250mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75	패키지: SC-75, SOT-416	재고3,344	500mA	40V	350mV @ 50mA, 500mA	100nA (ICBO)	150 @ 100mA, 2V	250mW	300MHz	150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75
CPH3240-TL-E	ON Semiconductor	TRANS NPN 100V 1A CPH3 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Supplier Device Package: 3-CPH	패키지: SC-96	재고72,000	1A	100V	400mV @ 40mA, 400mA	100nA (ICBO)	140 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Surface Mount	SC-96	3-CPH
KSB596YTU	Fairchild/ON Semiconductor	TRANS PNP 80V 4A TO-220 Transistor Type: PNP Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A Current - Collector Cutoff (Max): 70µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V Power - Max: 30W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고10,452	4A	80V	1.7V @ 300mA, 3A	70µA (ICBO)	120 @ 500mA, 5V	30W	3MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
2N5308	Central Semiconductor Corp	TRANS NPN DARL 40V 0.3A TO-92 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Power - Max: 625mW Frequency - Transition: 60MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고612,000	300mA	40V	1.4V @ 200µA, 200mA	100nA (ICBO)	7000 @ 2mA, 5V	625mW	60MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
KSE45H11TU	Fairchild/ON Semiconductor	TRANS PNP 80V 10A TO-220 Transistor Type: PNP Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V Power - Max: 1.67W Frequency - Transition: 40MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고63,408	10A	80V	1V @ 400mA, 8A	10µA	60 @ 2A, 1V	1.67W	40MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
BST52,115	Nexperia USA Inc.	TRANS NPN DARL 80V 1A SOT89 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Power - Max: 1.3W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고22,764	1A	80V	1.3V @ 500µA, 500mA	50nA	2000 @ 500mA, 10V	1.3W	200MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
JANTX2N2484	Microsemi Corporation	TRANS NPN 60V 0.05A TO-18 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V Power - Max: 360mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	패키지: TO-206AA, TO-18-3 Metal Can	재고67,884	50mA	60V	300mV @ 100µA, 1mA	2nA	225 @ 10mA, 5V	360mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
2SD2138APA	Panasonic Electronic Components	TRANS NPN DARL 80V 2A MT-4 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 2A, 4V Power - Max: 15W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: MT-4-A1	패키지: 3-SIP	재고14,988	2A	80V	2.5V @ 8mA, 2A	100µA	4000 @ 2A, 4V	15W	20MHz	150°C (TJ)	Through Hole	3-SIP	MT-4-A1
DXTP19020DP5-13	Diodes Incorporated	TRANS PNP 20V 8A POWERDI5 Transistor Type: PNP Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Power - Max: 3W Frequency - Transition: 176MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5	패키지: PowerDI? 5	재고42,918	8A	20V	275mV @ 800mA, 8A	50nA (ICBO)	300 @ 100mA, 2V	3W	176MHz	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI? 5	PowerDI? 5
MMBTA63-7-F	Diodes Incorporated	TRANS PNP DARL 30V 0.5A SOT23-3 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 300mW Frequency - Transition: 125MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고660,000	500mA	30V	1.5V @ 100µA, 100mA	100nA (ICBO)	10000 @ 100mA, 5V	300mW	125MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2N2907A	Central Semiconductor Corp	TRANS PNP 60V 0.6A TO-18 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 400mW Frequency - Transition: 200MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	패키지: TO-206AA, TO-18-3 Metal Can	재고517,932	600mA	60V	1.6V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	400mW	200MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
2SD1851-TB-E-SY	Sanyo	PNP EPITAXIAL PLANAR SILICON Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANHCA2N3637	Microchip Technology	TRANS PNP 175V 1A TO39 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 175 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	1 A	175 V	600mV @ 5mA, 50mA	10µA	100 @ 50mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANSP2N3501	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	300 mA	150 V	400mV @ 15mA, 150mA	10µA (ICBO)	100 @ 150mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
FMMT493-HF	Comchip Technology	TRANS NPN 1A 120V SOT-23 Transistor Type: - Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V Power - Max: 250 mW Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	1 A	100 V	600mV @ 100mA, 1A	100nA	100 @ 250mA, 10V	250 mW	150MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
S9014-C-BP	Micro Commercial Co	TRANS NPN 45V 0.1A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Power - Max: 400 mW Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	Request a Quote	100 mA	45 V	300mV @ 5mA, 100mA	100nA	200 @ 1mA, 5V	400 mW	150MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
2N2219AE4	Microchip Technology	TRANS NPN 50V 0.8A TO39 Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	800 mA	50 V	1V @ 50mA, 500mA	10nA	100 @ 150mA, 10V	800 mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
MJD50RLG	onsemi	TRANS NPN 400V 1A DPAK Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 400 V Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 200µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Power - Max: 1.56 W Frequency - Transition: 10MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	패키지: -	Request a Quote	1 A	400 V	1V @ 200mA, 1A	200µA	30 @ 300mA, 10V	1.56 W	10MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK
BCX38A-PBFREE	Central Semiconductor Corp	TRANS NPN 60V TO92 Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 500mA, 5V Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	Request a Quote	-	60 V	-	100nA (ICBO)	1000 @ 500mA, 5V	-	-	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
JANTX2N2604	Microchip Technology	TRANS PNP 60V 0.03A TO46 Transistor Type: PNP Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500µA, 5V Power - Max: 400 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46 (TO-206AB)	패키지: -	Request a Quote	30 mA	60 V	300mV @ 500µA, 10mA	10nA	60 @ 500µA, 5V	400 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AB, TO-46-3 Metal Can	TO-46 (TO-206AB)
2SA1222-T-AZ	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 160 V Vce Saturation (Max) @ Ib, Ic: 900mV @ 200mA, 1A Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V Power - Max: 1 W Frequency - Transition: 45MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SSIP Supplier Device Package: -	패키지: -	Request a Quote	500 mA	160 V	900mV @ 200mA, 1A	200nA (ICBO)	100 @ 100mA, 2V	1 W	45MHz	150°C (TJ)	Through Hole	3-SSIP	-
2SC4696-AN	onsemi	NPN 0.5A 80V DARLINGTON Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

2SD2695(T6CNO,A,F)

Toshiba Semiconductor and Storage

TRANS NPN 2A 60V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

패키지: TO-226-3, TO-92-3 Long Body

재고2,032

2A

60V

1.5V @ 1mA, 1A

10µA (ICBO)

2000 @ 1A, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

JAN2N1486

Microsemi Corporation

TRANS NPN 55V 3A

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 55V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 40mA, 750mA
Current - Collector Cutoff (Max): 15µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 750mA, 4V
Power - Max: 1.75W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-233AA, TO-8-3 Lens Top Metal Can
Supplier Device Package: TO-8

패키지: TO-233AA, TO-8-3 Lens Top Metal Can

재고5,456

3A

55V

750mV @ 40mA, 750mA

15µA (ICBO)

35 @ 750mA, 4V

1.75W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-233AA, TO-8-3 Lens Top Metal Can

TO-8

BD244C-S

Bourns Inc.

TRANS PNP 100V 6A

Transistor Type: PNP
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고5,120

6A

100V

1.5V @ 1A, 6A

700µA

15 @ 3A, 4V

2W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

TIP29E-S

Bourns Inc.

TRANS NPN 140V 1A

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 4V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고3,472

1A

140V

700mV @ 125mA, 1A

300µA

40 @ 200mA, 4V

2W

-

Through Hole

TO-220-3

TO-220

ZTX1056ASTOB

Diodes Incorporated

TRANS NPN 160V 3A E-LINE

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 3A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 10V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3, Formed Leads

재고3,744

3A

160V

300mV @ 200mA, 3A

10nA

300 @ 500mA, 10V

1W

120MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

FCX1147ATA

Diodes Incorporated

TRANS PNP 12V 3A SOT-89

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 5A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Power - Max: 2W
Frequency - Transition: 115MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고60,000

3A

12V

400mV @ 50mA, 5A

10nA

250 @ 500mA, 2V

2W

115MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

PBSS3540E,115

NXP

TRANS PNP 40V 0.5A SC75

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Power - Max: 250mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75

패키지: SC-75, SOT-416

재고3,344

500mA

40V

350mV @ 50mA, 500mA

100nA (ICBO)

150 @ 100mA, 2V

250mW

300MHz

150°C (TJ)

Surface Mount

SC-75, SOT-416

SC-75

CPH3240-TL-E

ON Semiconductor

TRANS NPN 100V 1A CPH3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Power - Max: 900mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Supplier Device Package: 3-CPH

패키지: SC-96

재고72,000

1A

100V

400mV @ 40mA, 400mA

100nA (ICBO)

140 @ 100mA, 5V

900mW

120MHz

150°C (TJ)

Surface Mount

SC-96

3-CPH

KSB596YTU

Fairchild/ON Semiconductor

TRANS PNP 80V 4A TO-220

Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A
Current - Collector Cutoff (Max): 70µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V
Power - Max: 30W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고10,452

4A

80V

1.7V @ 300mA, 3A

70µA (ICBO)

120 @ 500mA, 5V

30W

3MHz

150°C (TJ)

Through Hole

TO-220-3

2N5308

Central Semiconductor Corp

TRANS NPN DARL 40V 0.3A TO-92

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Power - Max: 625mW
Frequency - Transition: 60MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고612,000

300mA

40V

1.4V @ 200µA, 200mA

100nA (ICBO)

7000 @ 2mA, 5V

625mW

60MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

KSE45H11TU

Fairchild/ON Semiconductor

TRANS PNP 80V 10A TO-220

Transistor Type: PNP
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Power - Max: 1.67W
Frequency - Transition: 40MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고63,408

10A

80V

1V @ 400mA, 8A

10µA

60 @ 2A, 1V

1.67W

40MHz

150°C (TJ)

Through Hole

TO-220-3

BST52,115

Nexperia USA Inc.

TRANS NPN DARL 80V 1A SOT89

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 1.3W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고22,764

1A

80V

1.3V @ 500µA, 500mA

50nA

2000 @ 500mA, 10V

1.3W

200MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

JANTX2N2484

Microsemi Corporation

TRANS NPN 60V 0.05A TO-18

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Power - Max: 360mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

패키지: TO-206AA, TO-18-3 Metal Can

재고67,884

50mA

60V

300mV @ 100µA, 1mA

2nA

225 @ 10mA, 5V

360mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

2SD2138APA

Panasonic Electronic Components

TRANS NPN DARL 80V 2A MT-4

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 2A, 4V
Power - Max: 15W
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: MT-4-A1

패키지: 3-SIP

재고14,988

2A

80V

2.5V @ 8mA, 2A

100µA

4000 @ 2A, 4V

15W

20MHz

150°C (TJ)

Through Hole

3-SIP

MT-4-A1

DXTP19020DP5-13

Diodes Incorporated

TRANS PNP 20V 8A POWERDI5

Transistor Type: PNP
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Power - Max: 3W
Frequency - Transition: 176MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI? 5

패키지: PowerDI? 5

재고42,918

8A

20V

275mV @ 800mA, 8A

50nA (ICBO)

300 @ 100mA, 2V

3W

176MHz

-55°C ~ 150°C (TJ)

Surface Mount

PowerDI? 5

MMBTA63-7-F

Diodes Incorporated

TRANS PNP DARL 30V 0.5A SOT23-3

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 300mW
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고660,000

500mA

30V

1.5V @ 100µA, 100mA

100nA (ICBO)

10000 @ 100mA, 5V

300mW

125MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2N2907A

Central Semiconductor Corp

TRANS PNP 60V 0.6A TO-18

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 400mW
Frequency - Transition: 200MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

패키지: TO-206AA, TO-18-3 Metal Can

재고517,932

600mA

60V

1.6V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

400mW

200MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

2SD1851-TB-E-SY

Sanyo

PNP EPITAXIAL PLANAR SILICON

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

JANHCA2N3637

Microchip Technology

TRANS PNP 175V 1A TO39

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

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1 A

175 V

600mV @ 5mA, 50mA

10µA

100 @ 50mA, 10V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

JANSP2N3501

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

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300 mA

150 V

400mV @ 15mA, 150mA

10µA (ICBO)

100 @ 150mA, 10V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

FMMT493-HF

Comchip Technology

TRANS NPN 1A 120V SOT-23

Transistor Type: -
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Power - Max: 250 mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

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1 A

100 V

600mV @ 100mA, 1A

100nA

100 @ 250mA, 10V

250 mW

150MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

S9014-C-BP

Micro Commercial Co

TRANS NPN 45V 0.1A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Power - Max: 400 mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

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100 mA

45 V

300mV @ 5mA, 100mA

100nA

200 @ 1mA, 5V

400 mW

150MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

2N2219AE4

Microchip Technology

TRANS NPN 50V 0.8A TO39

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

Request a Quote

800 mA

50 V

1V @ 50mA, 500mA

10nA

100 @ 150mA, 10V

800 mW

-

-55°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

MJD50RLG

onsemi

TRANS NPN 400V 1A DPAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Power - Max: 1.56 W
Frequency - Transition: 10MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

패키지: -

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1 A

400 V

1V @ 200mA, 1A

200µA

30 @ 300mA, 10V

1.56 W

10MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

BCX38A-PBFREE

Central Semiconductor Corp

TRANS NPN 60V TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 500mA, 5V
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

Request a Quote

-

60 V

-

100nA (ICBO)

1000 @ 500mA, 5V

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

JANTX2N2604

Microchip Technology

TRANS PNP 60V 0.03A TO46

Transistor Type: PNP
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500µA, 5V
Power - Max: 400 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Supplier Device Package: TO-46 (TO-206AB)

패키지: -

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30 mA

60 V

300mV @ 500µA, 10mA

10nA

60 @ 500µA, 5V

400 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AB, TO-46-3 Metal Can

TO-46 (TO-206AB)

2SA1222-T-AZ

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Vce Saturation (Max) @ Ib, Ic: 900mV @ 200mA, 1A
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Power - Max: 1 W
Frequency - Transition: 45MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SSIP
Supplier Device Package: -

패키지: -

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500 mA

160 V

900mV @ 200mA, 1A

200nA (ICBO)

100 @ 100mA, 2V

1 W

45MHz

150°C (TJ)

Through Hole

3-SSIP

-

2SC4696-AN

onsemi

NPN 0.5A 80V DARLINGTON

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-