페이지 55 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BC846BW/ZLF	Nexperia USA Inc.	TRANS NPN 65V 0.1A SOT323 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88-6	패키지: 6-TSSOP, SC-88, SOT-363	재고7,184	-	-	-	-	-	-	-	-	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88-6
TIP29C-S	Bourns Inc.	TRANS NPN 100V 1A Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고5,760	1A	100V	700mV @ 125mA, 1A	300µA	15 @ 1A, 4V	2W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
MPSA12_D74Z	Fairchild/ON Semiconductor	TRANS NPN DARL 20V 1.2A TO-92 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고7,616	1.2A	20V	1V @ 10µA, 10mA	100nA	20000 @ 10mA, 5V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BD242B	ON Semiconductor	TRANS PNP 80V 3A TO220AB Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 600mA, 3A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Power - Max: 40W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고99,600	3A	80V	1.2V @ 600mA, 3A	300µA	25 @ 1A, 4V	40W	3MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
BC487G	ON Semiconductor	TRANS NPN 60V 0.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고5,136	500mA	60V	300mV @ 100mA, 1A	100nA (ICBO)	60 @ 100mA, 5V	625mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJP5021RVTU	Fairchild/ON Semiconductor	TRANS NPN 500V 5A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 500V Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V Power - Max: 50W Frequency - Transition: 18MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고3,264	5A	500V	1V @ 600mA, 3A	10µA (ICBO)	15 @ 600mA, 5V	50W	18MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
PN4141	Fairchild/ON Semiconductor	TRANS NPN 30V 0.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 625mW Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고3,072	500mA	30V	1.6V @ 50mA, 500mA	-	100 @ 150mA, 10V	625mW	-	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
KSC1187OBU	Fairchild/ON Semiconductor	TRANS NPN 20V 0.03A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 10V Power - Max: 250mW Frequency - Transition: 700MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고5,232	30mA	20V	-	100nA (ICBO)	70 @ 2mA, 10V	250mW	700MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BCX20	Fairchild/ON Semiconductor	TRANS NPN 25V 0.8A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 310mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고642,960	800mA	25V	620mV @ 50mA, 500mA	100nA (ICBO)	100 @ 100mA, 1V	310mW	-	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2SB1463JRL	Panasonic Electronic Components	TRANS PNP 150V 0.05A SSMINI-3 Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 10mA, 5V Power - Max: 125mW Frequency - Transition: 200MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F1	패키지: SC-89, SOT-490	재고3,504	50mA	150V	1V @ 3mA, 30mA	1µA (ICBO)	130 @ 10mA, 5V	125mW	200MHz	125°C (TJ)	Surface Mount	SC-89, SOT-490	SSMini3-F1
2SA06840S	Panasonic Electronic Components	TRANS PNP 50V 1A TO-92L Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 10V Power - Max: 1W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92	패키지: TO-226-3, TO-92-3 Long Body	재고7,936	1A	50V	400mV @ 50mA, 500mA	100nA (ICBO)	170 @ 500mA, 10V	1W	200MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92
2SA10960R	Panasonic Electronic Components	TRANS PNP 50V 2A TO-126 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V Power - Max: 1.2W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	패키지: TO-225AA, TO-126-3	재고6,944	2A	50V	1V @ 150mA, 1.5A	100µA	120 @ 1A, 5V	1.2W	150MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
BCX71GE6327HTSA1	Infineon Technologies	TRANS PNP 45V 0.1A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Power - Max: 330mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고7,248	100mA	45V	550mV @ 1.25mA, 50mA	20nA (ICBO)	120 @ 2mA, 5V	330mW	250MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
NSVMMBT4401WT1G	ON Semiconductor	TRANS NPN 40V BIPOLAR SC70-3 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,000	-	-	-	-	-	-	-	-	-	-	-
2PD601ASL,235	Nexperia USA Inc.	TRANS NPN 50V 0.1A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 10V Power - Max: 250mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고4,880	100mA	50V	250mV @ 10mA, 100mA	10nA (ICBO)	290 @ 2mA, 10V	250mW	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BCX5510TA	Diodes Incorporated	TRANS NPN 60V 1A SOT89 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고16,368	1A	60V	500mV @ 50mA, 500mA	100nA (ICBO)	63 @ 150mA, 2V	1W	150MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
PBHV9515QAZ	Nexperia USA Inc.	TRANS PNP 150V 0.5A DFN1010D-3 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 10V Power - Max: 325mW Frequency - Transition: 75MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1010D-3	패키지: 3-XDFN Exposed Pad	재고2,288	500mA	150V	100mV @ 5mA, 50mA	100nA	100 @ 200mA, 10V	325mW	75MHz	150°C (TJ)	Surface Mount	3-XDFN Exposed Pad	DFN1010D-3
MMBT3904TT1G	ON Semiconductor	TRANS NPN 40V 0.2A SOT416 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 300mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75, SOT-416	패키지: SC-75, SOT-416	재고114,312	200mA	40V	300mV @ 5mA, 50mA	-	100 @ 10mA, 1V	300mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75, SOT-416
SS8050BBU	Fairchild/ON Semiconductor	TRANS NPN 25V 1.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 100mA, 1V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고27,450	1.5A	25V	500mV @ 80mA, 800mA	100nA (ICBO)	85 @ 100mA, 1V	1W	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
DXT3150-13	Diodes Incorporated	TRANS NPN 25V 5A SOT89-3 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 220MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고660,000	5A	25V	500mV @ 200mA, 4A	1µA (ICBO)	250 @ 500mA, 2V	1W	220MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
2SC3325-Y,LF	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.5A S-MINI Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Power - Max: 200mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	패키지: TO-236-3, SC-59, SOT-23-3	재고197,706	500mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	120 @ 100mA, 1V	200mW	300MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
BC850B-AU_R1_000A1	Panjit International Inc.	TRANS NPN 45V 0.1A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 330 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote	100 mA	45 V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	330 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2SAR502U3HZGT106	Rohm Semiconductor	TRANS PNP 30V 0.5A UMT3 Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 200 mW Frequency - Transition: 520MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	패키지: -	재고4,779	500 mA	30 V	400mV @ 10mA, 200mA	200nA (ICBO)	200 @ 100mA, 2V	200 mW	520MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	UMT3
2SC2873-Y-TE12L-ZC	Toshiba Semiconductor and Storage	PB-F POWER TRANSISTOR PW-MINI MO Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 500 mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	패키지: -	재고3,453	2 A	50 V	500mV @ 50mA, 1A	100nA (ICBO)	70 @ 500mA, 2V	500 mW	120MHz	150°C (TJ)	Surface Mount	TO-243AA	PW-MINI
JANSM2N3634UB	Microchip Technology	TRANS PNP 140V 1A UB Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 140 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	1 A	140 V	600mV @ 5mA, 50mA	10µA	50 @ 50mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UB
2SC5069-TD-E	onsemi	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BCX54E6327	Infineon Technologies	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANS2N7371	Microchip Technology	POWER BJT Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Power - Max: 100 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA Supplier Device Package: TO-254AA	패키지: -	Request a Quote	12 A	100 V	3V @ 120mA, 12A	1mA	1000 @ 6A, 3V	100 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-254-3, TO-254AA	TO-254AA

BC846BW/ZLF

Nexperia USA Inc.

TRANS NPN 65V 0.1A SOT323

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88-6

패키지: 6-TSSOP, SC-88, SOT-363

재고7,184

-

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88-6

TIP29C-S

Bourns Inc.

TRANS NPN 100V 1A

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고5,760

1A

100V

700mV @ 125mA, 1A

300µA

15 @ 1A, 4V

2W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

MPSA12_D74Z

Fairchild/ON Semiconductor

TRANS NPN DARL 20V 1.2A TO-92

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1.2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고7,616

1.2A

20V

1V @ 10µA, 10mA

100nA

20000 @ 10mA, 5V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BD242B

ON Semiconductor

TRANS PNP 80V 3A TO220AB

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 600mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Power - Max: 40W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고99,600

3A

80V

1.2V @ 600mA, 3A

300µA

25 @ 1A, 4V

40W

3MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

BC487G

ON Semiconductor

TRANS NPN 60V 0.5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고5,136

500mA

60V

300mV @ 100mA, 1A

100nA (ICBO)

60 @ 100mA, 5V

625mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

FJP5021RVTU

Fairchild/ON Semiconductor

TRANS NPN 500V 5A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 500V
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
Power - Max: 50W
Frequency - Transition: 18MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고3,264

5A

500V

1V @ 600mA, 3A

10µA (ICBO)

15 @ 600mA, 5V

50W

18MHz

150°C (TJ)

Through Hole

TO-220-3

PN4141

Fairchild/ON Semiconductor

TRANS NPN 30V 0.5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고3,072

500mA

30V

1.6V @ 50mA, 500mA

-

100 @ 150mA, 10V

625mW

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

KSC1187OBU

Fairchild/ON Semiconductor

TRANS NPN 20V 0.03A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 10V
Power - Max: 250mW
Frequency - Transition: 700MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고5,232

30mA

20V

-

100nA (ICBO)

70 @ 2mA, 10V

250mW

700MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BCX20

Fairchild/ON Semiconductor

TRANS NPN 25V 0.8A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 310mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고642,960

800mA

25V

620mV @ 50mA, 500mA

100nA (ICBO)

100 @ 100mA, 1V

310mW

-

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2SB1463JRL

Panasonic Electronic Components

TRANS PNP 150V 0.05A SSMINI-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 10mA, 5V
Power - Max: 125mW
Frequency - Transition: 200MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F1

패키지: SC-89, SOT-490

재고3,504

50mA

150V

1V @ 3mA, 30mA

1µA (ICBO)

130 @ 10mA, 5V

125mW

200MHz

125°C (TJ)

Surface Mount

SC-89, SOT-490

SSMini3-F1

2SA06840S

Panasonic Electronic Components

TRANS PNP 50V 1A TO-92L

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 10V
Power - Max: 1W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92

패키지: TO-226-3, TO-92-3 Long Body

재고7,936

1A

50V

400mV @ 50mA, 500mA

100nA (ICBO)

170 @ 500mA, 10V

1W

200MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92

2SA10960R

Panasonic Electronic Components

TRANS PNP 50V 2A TO-126

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V
Power - Max: 1.2W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

패키지: TO-225AA, TO-126-3

재고6,944

2A

50V

1V @ 150mA, 1.5A

100µA

120 @ 1A, 5V

1.2W

150MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

BCX71GE6327HTSA1

Infineon Technologies

TRANS PNP 45V 0.1A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Power - Max: 330mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고7,248

100mA

45V

550mV @ 1.25mA, 50mA

20nA (ICBO)

120 @ 2mA, 5V

330mW

250MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

NSVMMBT4401WT1G

ON Semiconductor

TRANS NPN 40V BIPOLAR SC70-3

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,000

-

2PD601ASL,235

Nexperia USA Inc.

TRANS NPN 50V 0.1A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 10V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고4,880

100mA

50V

250mV @ 10mA, 100mA

10nA (ICBO)

290 @ 2mA, 10V

250mW

100MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BCX5510TA

Diodes Incorporated

TRANS NPN 60V 1A SOT89

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고16,368

1A

60V

500mV @ 50mA, 500mA

100nA (ICBO)

63 @ 150mA, 2V

1W

150MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

PBHV9515QAZ

Nexperia USA Inc.

TRANS PNP 150V 0.5A DFN1010D-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 10V
Power - Max: 325mW
Frequency - Transition: 75MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1010D-3

패키지: 3-XDFN Exposed Pad

재고2,288

500mA

150V

100mV @ 5mA, 50mA

100nA

100 @ 200mA, 10V

325mW

75MHz

150°C (TJ)

Surface Mount

3-XDFN Exposed Pad

DFN1010D-3

MMBT3904TT1G

ON Semiconductor

TRANS NPN 40V 0.2A SOT416

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 300mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416

패키지: SC-75, SOT-416

재고114,312

200mA

40V

300mV @ 5mA, 50mA

-

100 @ 10mA, 1V

300mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-75, SOT-416

SS8050BBU

Fairchild/ON Semiconductor

TRANS NPN 25V 1.5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 100mA, 1V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고27,450

1.5A

25V

500mV @ 80mA, 800mA

100nA (ICBO)

85 @ 100mA, 1V

1W

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

DXT3150-13

Diodes Incorporated

TRANS NPN 25V 5A SOT89-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 220MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고660,000

5A

25V

500mV @ 200mA, 4A

1µA (ICBO)

250 @ 500mA, 2V

1W

220MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

2SC3325-Y,LF

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.5A S-MINI

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Power - Max: 200mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

패키지: TO-236-3, SC-59, SOT-23-3

재고197,706

500mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

120 @ 100mA, 1V

200mW

300MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

BC850B-AU_R1_000A1

Panjit International Inc.

TRANS NPN 45V 0.1A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 330 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

Request a Quote

100 mA

45 V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

330 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2SAR502U3HZGT106

Rohm Semiconductor

TRANS PNP 30V 0.5A UMT3

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 200 mW
Frequency - Transition: 520MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

패키지: -

재고4,779

500 mA

30 V

400mV @ 10mA, 200mA

200nA (ICBO)

200 @ 100mA, 2V

200 mW

520MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

UMT3

2SC2873-Y-TE12L-ZC

Toshiba Semiconductor and Storage

PB-F POWER TRANSISTOR PW-MINI MO

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 500 mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI

패키지: -

재고3,453

2 A

50 V

500mV @ 50mA, 1A

100nA (ICBO)

70 @ 500mA, 2V

500 mW

120MHz

150°C (TJ)

Surface Mount

TO-243AA

PW-MINI

JANSM2N3634UB

Microchip Technology

TRANS PNP 140V 1A UB

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

1 A

140 V

600mV @ 5mA, 50mA

10µA

50 @ 50mA, 10V

1 W

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UB

2SC5069-TD-E

onsemi

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

BCX54E6327

Infineon Technologies

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

JANS2N7371

Microchip Technology

POWER BJT

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Power - Max: 100 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA
Supplier Device Package: TO-254AA

패키지: -

Request a Quote

12 A

100 V

3V @ 120mA, 12A

1mA

1000 @ 6A, 3V

100 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-254-3, TO-254AA

TO-254AA