페이지 559 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC2383-O(T6OMI,FM	Toshiba Semiconductor and Storage	TRANS NPN 1A 160V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	패키지: TO-226-3, TO-92-3 Long Body	재고7,440	1A	160V	1.5V @ 50mA, 500mA	1µA (ICBO)	60 @ 200mA, 5V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
CP647-PMD19K100-WS	Central Semiconductor Corp	TRANS PNP DARL 30A 100V DIE Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 30A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2.8V @ 60mA, 15A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 15A, 3V Power - Max: - Frequency - Transition: 4MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고7,056	30A	100V	2.8V @ 60mA, 15A	-	800 @ 15A, 3V	-	4MHz	-65°C ~ 150°C (TJ)	Surface Mount	Die	Die
2SC5706-P-TL-E	ON Semiconductor	TRANS NPN 100V 5A Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Power - Max: 800mW Frequency - Transition: 400MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: 2-TP-FA	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고5,440	5A	100V	240mV @ 100mA, 2A	1µA (ICBO)	200 @ 500mA, 2V	800mW	400MHz	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	2-TP-FA
MPSA64RLRAG	ON Semiconductor	TRANS PNP DARL 30V 0.5A TO-92 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Power - Max: 625mW Frequency - Transition: 125MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,584	500mA	30V	1.5V @ 100µA, 100mA	100nA (ICBO)	20000 @ 100mA, 5V	625mW	125MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MJD243	ON Semiconductor	TRANS NPN 100V 4A DPAK-3 Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V Power - Max: 1.4W Frequency - Transition: 40MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고7,408	4A	100V	600mV @ 100mA, 1A	100nA (ICBO)	40 @ 200mA, 1V	1.4W	40MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK-3
BC558BRL1	ON Semiconductor	TRANS PNP 30V 0.1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Power - Max: 625mW Frequency - Transition: 360MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,360	100mA	30V	650mV @ 5mA, 100mA	100nA	180 @ 2mA, 5V	625mW	360MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2PD601AQW,115	NXP	TRANS NPN 50V 0.1A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고3,024	100mA	50V	250mV @ 10mA, 100mA	10nA (ICBO)	160 @ 2mA, 10V	200mW	100MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
KSA1010Y	Fairchild/ON Semiconductor	TRANS PNP 100V 7A TO-220 Transistor Type: PNP Current - Collector (Ic) (Max): 7A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 5V Power - Max: 1.5W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고7,936	7A	100V	600mV @ 500mA, 5A	10µA (ICBO)	100 @ 3A, 5V	1.5W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
JANTX2N4033	Microsemi Corporation	TRANS PNP 80V 1A TO39 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 800mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: TO-205AD, TO-39-3 Metal Can	재고6,608	1A	80V	1V @ 100mA, 1A	10µA (ICBO)	100 @ 100mA, 5V	800mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
2SA1418T-TD-E	ON Semiconductor	TRANS PNP 0.7A 160V Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	패키지: TO-243AA	재고6,832	-	-	-	-	-	-	-	-	Surface Mount	TO-243AA	PCP
TIP147TU	Fairchild/ON Semiconductor	TRANS PNP DARL 100V 10A TO-3P Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 80W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	패키지: TO-3P-3, SC-65-3	재고5,744	10A	100V	3V @ 40mA, 10A	2mA	1000 @ 5A, 4V	80W	-	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
KSD794AYSTU	Fairchild/ON Semiconductor	TRANS NPN 60V 3A TO-126 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 2V @ 150mA, 1.5A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 5V Power - Max: 1W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	패키지: TO-225AA, TO-126-3	재고16,572	3A	60V	2V @ 150mA, 1.5A	1µA (ICBO)	160 @ 500mA, 5V	1W	60MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126-3
MMBT4403T-7-F	Diodes Incorporated	TRANS PNP 40V 0.6A SOT523 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 150mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	패키지: SOT-523	재고1,116,300	600mA	40V	750mV @ 50mA, 500mA	-	100 @ 150mA, 2V	150mW	200MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
2SA1790JCL	Panasonic Electronic Components	TRANS PNP 20V 0.03A SSMINI-3 Transistor Type: PNP Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V Power - Max: 125mW Frequency - Transition: 300MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F1	패키지: SC-89, SOT-490	재고24,738	30mA	20V	100mV @ 1mA, 10mA	100µA	110 @ 1mA, 10V	125mW	300MHz	125°C (TJ)	Surface Mount	SC-89, SOT-490	SSMini3-F1
MJB41CT4G	ON Semiconductor	TRANS NPN 100V 6A D2PAK-3 Transistor Type: NPN Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Power - Max: 2W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고19,020	6A	100V	1.5V @ 600mA, 6A	700µA	15 @ 3A, 4V	2W	3MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
BC846ALT1G	ON Semiconductor	TRANS NPN 65V 0.1A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고300,996	100mA	65V	600mV @ 5mA, 100mA	15nA (ICBO)	110 @ 2mA, 5V	300mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
JANKCCD2N3500	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	300 mA	150 V	400mV @ 15mA, 150mA	10µA (ICBO)	40 @ 150mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANKCDD2N5154	Microchip Technology	RH POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	2 A	80 V	1.5V @ 500mA, 5A	50µA	70 @ 2.5A, 5V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
BC847BW_R1_00001	Panjit International Inc.	TRANS NPN 45V 0.1A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: -	Request a Quote	100 mA	45 V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	250 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
JANTX2N2907AUBP	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	600 mA	60 V	1.6V @ 50mA, 500mA	50nA	100 @ 1mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
JANKCA2N3637	Microchip Technology	TRANS PNP 175V 1A TO39 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 175 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	1 A	175 V	600mV @ 5mA, 50mA	10µA	100 @ 50mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
NTE88	NTE Electronics, Inc	TRANS PNP 250V 10A TO3 Transistor Type: PNP Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 250 V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 400mA, 4A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 2V Power - Max: 200 W Frequency - Transition: 4MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	패키지: -	Request a Quote	10 A	250 V	2.5V @ 400mA, 4A	1mA	20 @ 2A, 2V	200 W	4MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
CEN-U05-PBFREE	Central Semiconductor Corp	TRANS NPN 60V 2A TO202 Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 1V Power - Max: 1.75 W Frequency - Transition: 50MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-202 Long Tab Supplier Device Package: TO-202	패키지: -	재고1,959	2 A	60 V	350mV @ 25mA, 250mA	100nA (ICBO)	20 @ 500mA, 1V	1.75 W	50MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-202 Long Tab	TO-202
JANKCCL2N5151	Microchip Technology	RH POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	2 A	80 V	1.5V @ 500mA, 5A	50µA	30 @ 2.5A, 5V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
2N6726	onsemi	TRANS PNP 30V 2A TO237 Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-237AA Supplier Device Package: TO-237	패키지: -	Request a Quote	2 A	30 V	-	-	-	-	-	-	Through Hole	TO-237AA	TO-237
BSP51-QX	Nexperia USA Inc.	BSP51-Q/SOT223/SC-73 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Power - Max: 1.25 W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: -	Request a Quote	1 A	60 V	1.3V @ 500µA, 500mA	50nA	2000 @ 500mA, 10V	1.25 W	200MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
2N5550-D26Z	Fairchild Semiconductor	TRANS NPN 140V 0.6A TO92-3 Transistor Type: NPN Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Power - Max: 625 mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92-3	패키지: -	Request a Quote	600 mA	140 V	250mV @ 5mA, 50mA	100nA (ICBO)	60 @ 10mA, 5V	625 mW	300MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92-3
ZXTN2018FQTA	Diodes Incorporated	TRANS NPN 60V 5A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 210mV @ 300mA, 6A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Power - Max: 1 W Frequency - Transition: 130MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	재고34,359	5 A	60 V	210mV @ 300mA, 6A	100nA	100 @ 2A, 1V	1 W	130MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3

2SC2383-O(T6OMI,FM

Toshiba Semiconductor and Storage

TRANS NPN 1A 160V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

패키지: TO-226-3, TO-92-3 Long Body

재고7,440

1A

160V

1.5V @ 50mA, 500mA

1µA (ICBO)

60 @ 200mA, 5V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

CP647-PMD19K100-WS

Central Semiconductor Corp

TRANS PNP DARL 30A 100V DIE

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 60mA, 15A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 15A, 3V
Power - Max: -
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고7,056

30A

100V

2.8V @ 60mA, 15A

-

800 @ 15A, 3V

-

4MHz

-65°C ~ 150°C (TJ)

Surface Mount

Die

2SC5706-P-TL-E

ON Semiconductor

TRANS NPN 100V 5A

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 800mW
Frequency - Transition: 400MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: 2-TP-FA

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고5,440

5A

100V

240mV @ 100mA, 2A

1µA (ICBO)

200 @ 500mA, 2V

800mW

400MHz

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

2-TP-FA

MPSA64RLRAG

ON Semiconductor

TRANS PNP DARL 30V 0.5A TO-92

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,584

500mA

30V

1.5V @ 100µA, 100mA

100nA (ICBO)

20000 @ 100mA, 5V

625mW

125MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MJD243

ON Semiconductor

TRANS NPN 100V 4A DPAK-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Power - Max: 1.4W
Frequency - Transition: 40MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK-3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고7,408

4A

100V

600mV @ 100mA, 1A

100nA (ICBO)

40 @ 200mA, 1V

1.4W

40MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK-3

BC558BRL1

ON Semiconductor

TRANS PNP 30V 0.1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Power - Max: 625mW
Frequency - Transition: 360MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,360

100mA

30V

650mV @ 5mA, 100mA

100nA

180 @ 2mA, 5V

625mW

360MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2PD601AQW,115

NXP

TRANS NPN 50V 0.1A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고3,024

100mA

50V

250mV @ 10mA, 100mA

10nA (ICBO)

160 @ 2mA, 10V

200mW

100MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

KSA1010Y

Fairchild/ON Semiconductor

TRANS PNP 100V 7A TO-220

Transistor Type: PNP
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 5V
Power - Max: 1.5W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고7,936

7A

100V

600mV @ 500mA, 5A

10µA (ICBO)

100 @ 3A, 5V

1.5W

-

150°C (TJ)

Through Hole

TO-220-3

JANTX2N4033

Microsemi Corporation

TRANS PNP 80V 1A TO39

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 800mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

재고6,608

1A

80V

1V @ 100mA, 1A

10µA (ICBO)

100 @ 100mA, 5V

800mW

-

-55°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

2SA1418T-TD-E

ON Semiconductor

TRANS PNP 0.7A 160V

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP

패키지: TO-243AA

재고6,832

-

Surface Mount

TO-243AA

PCP

TIP147TU

Fairchild/ON Semiconductor

TRANS PNP DARL 100V 10A TO-3P

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Power - Max: 80W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

패키지: TO-3P-3, SC-65-3

재고5,744

10A

100V

3V @ 40mA, 10A

2mA

1000 @ 5A, 4V

80W

-

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

KSD794AYSTU

Fairchild/ON Semiconductor

TRANS NPN 60V 3A TO-126

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2V @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 5V
Power - Max: 1W
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3

패키지: TO-225AA, TO-126-3

재고16,572

3A

60V

2V @ 150mA, 1.5A

1µA (ICBO)

160 @ 500mA, 5V

1W

60MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126-3

MMBT4403T-7-F

Diodes Incorporated

TRANS PNP 40V 0.6A SOT523

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 150mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

패키지: SOT-523

재고1,116,300

600mA

40V

750mV @ 50mA, 500mA

-

100 @ 150mA, 2V

150mW

200MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-523

2SA1790JCL

Panasonic Electronic Components

TRANS PNP 20V 0.03A SSMINI-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
Power - Max: 125mW
Frequency - Transition: 300MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F1

패키지: SC-89, SOT-490

재고24,738

30mA

20V

100mV @ 1mA, 10mA

100µA

110 @ 1mA, 10V

125mW

300MHz

125°C (TJ)

Surface Mount

SC-89, SOT-490

SSMini3-F1

MJB41CT4G

ON Semiconductor

TRANS NPN 100V 6A D2PAK-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Power - Max: 2W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고19,020

6A

100V

1.5V @ 600mA, 6A

700µA

15 @ 3A, 4V

2W

3MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

BC846ALT1G

ON Semiconductor

TRANS NPN 65V 0.1A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고300,996

100mA

65V

600mV @ 5mA, 100mA

15nA (ICBO)

110 @ 2mA, 5V

300mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

JANKCCD2N3500

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

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300 mA

150 V

400mV @ 15mA, 150mA

10µA (ICBO)

40 @ 150mA, 10V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

JANKCDD2N5154

Microchip Technology

RH POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

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2 A

80 V

1.5V @ 500mA, 5A

50µA

70 @ 2.5A, 5V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

BC847BW_R1_00001

Panjit International Inc.

TRANS NPN 45V 0.1A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: -

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100 mA

45 V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

250 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

JANTX2N2907AUBP

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

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600 mA

60 V

1.6V @ 50mA, 500mA

50nA

100 @ 1mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

JANKCA2N3637

Microchip Technology

TRANS PNP 175V 1A TO39

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

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1 A

175 V

600mV @ 5mA, 50mA

10µA

100 @ 50mA, 10V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

NTE88

NTE Electronics, Inc

TRANS PNP 250V 10A TO3

Transistor Type: PNP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 400mA, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 2V
Power - Max: 200 W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

패키지: -

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10 A

250 V

2.5V @ 400mA, 4A

1mA

20 @ 2A, 2V

200 W

4MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

CEN-U05-PBFREE

Central Semiconductor Corp

TRANS NPN 60V 2A TO202

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 1V
Power - Max: 1.75 W
Frequency - Transition: 50MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-202 Long Tab
Supplier Device Package: TO-202

패키지: -

재고1,959

2 A

60 V

350mV @ 25mA, 250mA

100nA (ICBO)

20 @ 500mA, 1V

1.75 W

50MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-202 Long Tab

TO-202

JANKCCL2N5151

Microchip Technology

RH POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

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2 A

80 V

1.5V @ 500mA, 5A

50µA

30 @ 2.5A, 5V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

2N6726

onsemi

TRANS PNP 30V 2A TO237

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-237AA
Supplier Device Package: TO-237

패키지: -

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2 A

30 V

-

Through Hole

TO-237AA

TO-237

BSP51-QX

Nexperia USA Inc.

BSP51-Q/SOT223/SC-73

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 1.25 W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: -

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1 A

60 V

1.3V @ 500µA, 500mA

50nA

2000 @ 500mA, 10V

1.25 W

200MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

2N5550-D26Z

Fairchild Semiconductor

TRANS NPN 140V 0.6A TO92-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 625 mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92-3

패키지: -

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600 mA

140 V

250mV @ 5mA, 50mA

100nA (ICBO)

60 @ 10mA, 5V

625 mW

300MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92-3

ZXTN2018FQTA

Diodes Incorporated

TRANS NPN 60V 5A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 210mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Power - Max: 1 W
Frequency - Transition: 130MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

재고34,359

5 A

60 V

210mV @ 300mA, 6A

100nA

100 @ 2A, 1V

1 W

130MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3