페이지 568 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SA1020-Y(T6TR,A,F	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	패키지: TO-226-3, TO-92-3 Long Body	재고3,536	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
BD246A-S	Bourns Inc.	TRANS PNP 60V 10A Transistor Type: PNP Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Power - Max: 3W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: SOT-93	패키지: TO-218-3	재고6,160	10A	60V	4V @ 2.5A, 10A	700µA	20 @ 3A, 4V	3W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-218-3	SOT-93
BC337-025G	ON Semiconductor	TRANS NPN 45V 0.8A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 210MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고4,336	800mA	45V	700mV @ 50mA, 500mA	100nA	160 @ 100mA, 1V	625mW	210MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
KSP14TA	Fairchild/ON Semiconductor	TRANS NPN DARL 30V 0.5A TO-92 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Power - Max: 625mW Frequency - Transition: 125MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고2,592	500mA	30V	1.5V @ 100µA, 100mA	100nA (ICBO)	20000 @ 100mA, 5V	625mW	125MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSP12BU	Fairchild/ON Semiconductor	TRANS NPN DARL 20V TO-92 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V Power - Max: 625mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,824	-	20V	1V @ 10µA, 10mA	100nA	20000 @ 10mA, 5V	625mW	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSC839YBU	Fairchild/ON Semiconductor	TRANS NPN 30V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 12V Power - Max: 250mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고4,080	100mA	30V	400mV @ 1mA, 10mA	100nA (ICBO)	120 @ 2mA, 12V	250mW	200MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJN3301RBU	Fairchild/ON Semiconductor	TRANS NPN 50V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V Power - Max: 300mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고5,232	100mA	50V	300mV @ 500µA, 10mA	100nA (ICBO)	20 @ 10mA, 5V	300mW	250MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BC33816BU	Fairchild/ON Semiconductor	TRANS NPN 25V 0.8A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고5,808	800mA	25V	700mV @ 50mA, 500mA	100nA	100 @ 100mA, 1V	625mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2N4403RLRAG	ON Semiconductor	TRANS PNP 40V 0.6A TO92 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고496,488	600mA	40V	750mV @ 50mA, 500mA	-	100 @ 150mA, 2V	625mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2SD0602AQL	Panasonic Electronic Components	TRANS NPN 50V 0.5A MINI 3P Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 150mA, 10V Power - Max: 200mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	패키지: TO-236-3, SC-59, SOT-23-3	재고7,952	500mA	50V	600mV @ 30mA, 300mA	100nA (ICBO)	85 @ 150mA, 10V	200mW	200MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1
JANTXV2N3741	Microsemi Corporation	TRANS PNP 80V 4A TO-66 Transistor Type: PNP Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Power - Max: 25W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	패키지: TO-213AA, TO-66-2	재고2,304	4A	80V	600mV @ 125mA, 1A	10µA	30 @ 250mA, 1V	25W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-213AA, TO-66-2	TO-66 (TO-213AA)
BCP56TX	Nexperia USA Inc.	TRANS NPN 80V 1A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 1.35W Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고7,568	1A	80V	500mV @ 50mA, 500mA	100nA (ICBO)	63 @ 150mA, 2V	1.35W	180MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
KTC3198-Y A1G	TSC America Inc.	TRANSISTOR, NPN, 50V, 0.15A, 300 Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Power - Max: 500mW Frequency - Transition: 80MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고2,336	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	70 @ 2mA, 6V	500mW	80MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92
PMST5088,115	Nexperia USA Inc.	TRANS NPN 30V 0.1A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고7,152	100mA	30V	500mV @ 1mA, 10mA	50nA (ICBO)	300 @ 100µA, 5V	200mW	100MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
BCW68GLT3G	ON Semiconductor	TRANS PNP 45V 0.8A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 30mA, 300mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Power - Max: 225mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고2,432	800mA	45V	1.5V @ 30mA, 300mA	20nA	120 @ 10mA, 1V	225mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
2SA1693	Sanken	TRANS PNP 80V 6A TO3P Transistor Type: PNP Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 4V Power - Max: 60W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-3P	패키지: TO-3P-3 Full Pack	재고9,696	6A	80V	1.5V @ 200mA, 2A	10µA (ICBO)	50 @ 2A, 4V	60W	20MHz	150°C (TJ)	Through Hole	TO-3P-3 Full Pack	TO-3P
D44C8	Fairchild/ON Semiconductor	TRANS NPN 60V 4A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 1V Power - Max: 60W Frequency - Transition: 40MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고5,136	4A	60V	500mV @ 50mA, 1A	10µA	20 @ 2A, 1V	60W	40MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
2SA1576AT106R	Rohm Semiconductor	TRANS PNP 50V 0.15A SOT-323 Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V Power - Max: 200mW Frequency - Transition: 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	패키지: SC-70, SOT-323	재고3,009,924	150mA	50V	500mV @ 5mA, 50mA	100nA (ICBO)	180 @ 1mA, 6V	200mW	140MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	UMT3
CP208-TIP31C-CT	Central Semiconductor Corp	TRANS NPN 100V 3A DIE Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Power - Max: 2 W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	3 A	100 V	1.2V @ 375mA, 3A	300µA	25 @ 1A, 4V	2 W	3MHz	-65°C ~ 150°C (TJ)	Surface Mount	Die	Die
MMS9014-L-TP	Micro Commercial Co	TRANS NPN 45V 0.1A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Power - Max: 200 mW Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote	100 mA	45 V	300mV @ 5mA, 100mA	100nA	200 @ 1mA, 5V	200 mW	150MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
PBHV9110DH-AU_R1_000A1	Panjit International Inc.	TRANS PNP 100V 1A SOT89 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V Power - Max: 1.4 W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	Request a Quote	1 A	100 V	600mV @ 100mA, 1A	500nA (ICBO)	140 @ 150mA, 2V	1.4 W	100MHz	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
2SA1435-AA	onsemi	2SA1435 - SMALL SIGNAL BIPOLAR T Transistor Type: NPN Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V Power - Max: 600 mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220ML	패키지: -	Request a Quote	300 mA	25 V	500mV @ 4mA, 200mA	100nA (ICBO)	500 @ 10mA, 5V	600 mW	250MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220ML
CMPT6429-TR-PBFREE	Central Semiconductor Corp	TRANS NPN 45V 0.2A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V Power - Max: 350 mW Frequency - Transition: 700MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	재고43,023	200 mA	45 V	600mV @ 5mA, 100mA	100nA	500 @ 100µA, 5V	350 mW	700MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
JANS2N3635	Microchip Technology	TRANS PNP 140V 1A TO39 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 140 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	1 A	140 V	600mV @ 5mA, 50mA	10µA	100 @ 50mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANSD2N2369AU-TR	Microchip Technology	RH DUAL - SMALL-SIGNAL BJT Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 15 V Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: U	패키지: -	Request a Quote	-	15 V	450mV @ 10mA, 100mA	400nA	40 @ 10mA, 1V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	6-SMD, No Lead	U
2SCR512PFRAT100	Rohm Semiconductor	TRANS NPN 30V 2A MPT3 Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 500 mW Frequency - Transition: 320MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	패키지: -	Request a Quote	2 A	30 V	400mV @ 35mA, 700mA	1µA (ICBO)	200 @ 100mA, 2V	500 mW	320MHz	150°C (TJ)	Surface Mount	TO-243AA	MPT3
2N3738	Microchip Technology	TRANS PNP 225V 1A TO66 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 225 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 20 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	패키지: -	Request a Quote	1 A	225 V	-	-	-	20 W	-	-	Through Hole	TO-213AA, TO-66-2	TO-66 (TO-213AA)
2N6306	Microchip Technology	NPN TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 250 V Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 8A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 5V Power - Max: 125 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AD (TO-3)	패키지: -	Request a Quote	8 A	250 V	5V @ 2A, 8A	50µA	15 @ 3A, 5V	125 W	-	-65°C ~ 200°C	Through Hole	TO-204AA, TO-3	TO-204AD (TO-3)

2SA1020-Y(T6TR,A,F

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

패키지: TO-226-3, TO-92-3 Long Body

재고3,536

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

BD246A-S

Bourns Inc.

TRANS PNP 60V 10A

Transistor Type: PNP
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Power - Max: 3W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: SOT-93

패키지: TO-218-3

재고6,160

10A

60V

4V @ 2.5A, 10A

700µA

20 @ 3A, 4V

3W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-218-3

SOT-93

BC337-025G

ON Semiconductor

TRANS NPN 45V 0.8A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 210MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고4,336

800mA

45V

700mV @ 50mA, 500mA

100nA

160 @ 100mA, 1V

625mW

210MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

KSP14TA

Fairchild/ON Semiconductor

TRANS NPN DARL 30V 0.5A TO-92

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: 125MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고2,592

500mA

30V

1.5V @ 100µA, 100mA

100nA (ICBO)

20000 @ 100mA, 5V

625mW

125MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSP12BU

Fairchild/ON Semiconductor

TRANS NPN DARL 20V TO-92

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,824

-

20V

1V @ 10µA, 10mA

100nA

20000 @ 10mA, 5V

625mW

-

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSC839YBU

Fairchild/ON Semiconductor

TRANS NPN 30V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 12V
Power - Max: 250mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고4,080

100mA

30V

400mV @ 1mA, 10mA

100nA (ICBO)

120 @ 2mA, 12V

250mW

200MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

FJN3301RBU

Fairchild/ON Semiconductor

TRANS NPN 50V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Power - Max: 300mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고5,232

100mA

50V

300mV @ 500µA, 10mA

100nA (ICBO)

20 @ 10mA, 5V

300mW

250MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BC33816BU

Fairchild/ON Semiconductor

TRANS NPN 25V 0.8A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고5,808

800mA

25V

700mV @ 50mA, 500mA

100nA

100 @ 100mA, 1V

625mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2N4403RLRAG

ON Semiconductor

TRANS PNP 40V 0.6A TO92

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고496,488

600mA

40V

750mV @ 50mA, 500mA

-

100 @ 150mA, 2V

625mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2SD0602AQL

Panasonic Electronic Components

TRANS NPN 50V 0.5A MINI 3P

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 150mA, 10V
Power - Max: 200mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1

패키지: TO-236-3, SC-59, SOT-23-3

재고7,952

500mA

50V

600mV @ 30mA, 300mA

100nA (ICBO)

85 @ 150mA, 10V

200mW

200MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G1

JANTXV2N3741

Microsemi Corporation

TRANS PNP 80V 4A TO-66

Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Power - Max: 25W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)

패키지: TO-213AA, TO-66-2

재고2,304

4A

80V

600mV @ 125mA, 1A

10µA

30 @ 250mA, 1V

25W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-213AA, TO-66-2

TO-66 (TO-213AA)

BCP56TX

Nexperia USA Inc.

TRANS NPN 80V 1A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 1.35W
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고7,568

1A

80V

500mV @ 50mA, 500mA

100nA (ICBO)

63 @ 150mA, 2V

1.35W

180MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

KTC3198-Y A1G

TSC America Inc.

TRANSISTOR, NPN, 50V, 0.15A, 300

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Power - Max: 500mW
Frequency - Transition: 80MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고2,336

150mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

70 @ 2mA, 6V

500mW

80MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92

PMST5088,115

Nexperia USA Inc.

TRANS NPN 30V 0.1A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고7,152

100mA

30V

500mV @ 1mA, 10mA

50nA (ICBO)

300 @ 100µA, 5V

200mW

100MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

BCW68GLT3G

ON Semiconductor

TRANS PNP 45V 0.8A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 30mA, 300mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Power - Max: 225mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고2,432

800mA

45V

1.5V @ 30mA, 300mA

20nA

120 @ 10mA, 1V

225mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

2SA1693

Sanken

TRANS PNP 80V 6A TO3P

Transistor Type: PNP
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 4V
Power - Max: 60W
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-3P

패키지: TO-3P-3 Full Pack

재고9,696

6A

80V

1.5V @ 200mA, 2A

10µA (ICBO)

50 @ 2A, 4V

60W

20MHz

150°C (TJ)

Through Hole

TO-3P-3 Full Pack

TO-3P

D44C8

Fairchild/ON Semiconductor

TRANS NPN 60V 4A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 1V
Power - Max: 60W
Frequency - Transition: 40MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고5,136

4A

60V

500mV @ 50mA, 1A

10µA

20 @ 2A, 1V

60W

40MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

2SA1576AT106R

Rohm Semiconductor

TRANS PNP 50V 0.15A SOT-323

Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Power - Max: 200mW
Frequency - Transition: 140MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

패키지: SC-70, SOT-323

재고3,009,924

150mA

50V

500mV @ 5mA, 50mA

100nA (ICBO)

180 @ 1mA, 6V

200mW

140MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

UMT3

CP208-TIP31C-CT

Central Semiconductor Corp

TRANS NPN 100V 3A DIE

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Power - Max: 2 W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

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3 A

100 V

1.2V @ 375mA, 3A

300µA

25 @ 1A, 4V

2 W

3MHz

-65°C ~ 150°C (TJ)

Surface Mount

Die

MMS9014-L-TP

Micro Commercial Co

TRANS NPN 45V 0.1A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Power - Max: 200 mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

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100 mA

45 V

300mV @ 5mA, 100mA

100nA

200 @ 1mA, 5V

200 mW

150MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

PBHV9110DH-AU_R1_000A1

Panjit International Inc.

TRANS PNP 100V 1A SOT89

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Power - Max: 1.4 W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

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1 A

100 V

600mV @ 100mA, 1A

500nA (ICBO)

140 @ 150mA, 2V

1.4 W

100MHz

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

2SA1435-AA

onsemi

2SA1435 - SMALL SIGNAL BIPOLAR T

Transistor Type: NPN
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Power - Max: 600 mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220ML

패키지: -

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300 mA

25 V

500mV @ 4mA, 200mA

100nA (ICBO)

500 @ 10mA, 5V

600 mW

250MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220ML

CMPT6429-TR-PBFREE

Central Semiconductor Corp

TRANS NPN 45V 0.2A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V
Power - Max: 350 mW
Frequency - Transition: 700MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

재고43,023

200 mA

45 V

600mV @ 5mA, 100mA

100nA

500 @ 100µA, 5V

350 mW

700MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

JANS2N3635

Microchip Technology

TRANS PNP 140V 1A TO39

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

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1 A

140 V

600mV @ 5mA, 50mA

10µA

100 @ 50mA, 10V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

JANSD2N2369AU-TR

Microchip Technology

RH DUAL - SMALL-SIGNAL BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 15 V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: U

패키지: -

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-

15 V

450mV @ 10mA, 100mA

400nA

40 @ 10mA, 1V

500 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

6-SMD, No Lead

U

2SCR512PFRAT100

Rohm Semiconductor

TRANS NPN 30V 2A MPT3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 500 mW
Frequency - Transition: 320MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3

패키지: -

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2 A

30 V

400mV @ 35mA, 700mA

1µA (ICBO)

200 @ 100mA, 2V

500 mW

320MHz

150°C (TJ)

Surface Mount

TO-243AA

MPT3

2N3738

Microchip Technology

TRANS PNP 225V 1A TO66

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 225 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 20 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)

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1 A

225 V

-

20 W

-

Through Hole

TO-213AA, TO-66-2

TO-66 (TO-213AA)

2N6306

Microchip Technology

NPN TRANSISTOR

Transistor Type: NPN
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 5V
Power - Max: 125 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AD (TO-3)

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8 A

250 V

5V @ 2A, 8A

50µA

15 @ 3A, 5V

125 W

-

-65°C ~ 200°C

Through Hole

TO-204AA, TO-3

TO-204AD (TO-3)