페이지 572 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BC 817-16 B5003	Infineon Technologies	TRANS NPN 45V 0.5A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 330mW Frequency - Transition: 170MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고3,504	500mA	45V	700mV @ 50mA, 500mA	100nA (ICBO)	100 @ 100mA, 1V	330mW	170MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
TIP36B	Central Semiconductor Corp	TRANS GENERAL PURPOSE TO-218 Transistor Type: PNP Current - Collector (Ic) (Max): 25A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V Power - Max: 125W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: TO-218	패키지: TO-218-3	재고3,680	25A	80V	-	-	10 @ 15A, 4V	125W	3MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-218-3	TO-218
JANTXV2N6250T1	Microsemi Corporation	TRANS NPN 275V 10A TO-3 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 275V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V Power - Max: 6W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA (Straight Leads) Supplier Device Package: TO-254AA	패키지: TO-254-3, TO-254AA (Straight Leads)	재고3,744	10A	275V	1.5V @ 1.25A, 10A	1mA	8 @ 10A, 3V	6W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-254-3, TO-254AA (Straight Leads)	TO-254AA
JANTX2N6250T1	Microsemi Corporation	TRANS NPN 275V 10A TO-3 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 275V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V Power - Max: 6W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA (Straight Leads) Supplier Device Package: TO-254AA	패키지: TO-254-3, TO-254AA (Straight Leads)	재고7,824	10A	275V	1.5V @ 1.25A, 10A	1mA	8 @ 10A, 3V	6W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-254-3, TO-254AA (Straight Leads)	TO-254AA
JANTX2N2369AU	Microsemi Corporation	TRANS NPN 15V SMD Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: 3-SMD, No Lead	재고7,712	-	15V	450mV @ 10mA, 100mA	400nA	20 @ 100mA, 1V	500mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
BDW54C-S	Bourns Inc.	TRANS PNP DARL 100V 4A Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 4V @ 40mA, 4A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고4,304	4A	100V	4V @ 40mA, 4A	500µA	750 @ 1.5A, 3V	2W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
PN2222ARLRP	ON Semiconductor	TRANS NPN 40V 0.6A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 625mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,616	600mA	40V	1V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	625mW	300MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
ESM2030DV	STMicroelectronics	TRANS NPN DARL 300V 67A ISOTOP Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 67A Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.6A, 56A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 56A, 5V Power - Max: 150W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ISOTOP Supplier Device Package: ISOTOP?	패키지: ISOTOP	재고5,072	67A	300V	1.5V @ 1.6A, 56A	-	300 @ 56A, 5V	150W	-	150°C (TJ)	Chassis Mount	ISOTOP	ISOTOP?
BD158STU	Fairchild/ON Semiconductor	TRANS NPN 300V 0.5A TO-126 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Power - Max: 20W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	패키지: TO-225AA, TO-126-3	재고3,824	500mA	300V	-	100µA (ICBO)	30 @ 50mA, 10V	20W	-	-	Through Hole	TO-225AA, TO-126-3	TO-126
PN2907ARLRA	ON Semiconductor	TRANS PNP 60V 0.6A TO92 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고2,256	600mA	60V	1.6V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	625mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2SB15920RA	Panasonic Electronic Components	TRANS PNP 25V 3A TO-92NL Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 220mV @ 25mA, 1.4A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 1.4A, 2V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92NL-A1	패키지: TO-226-3, TO-92-3 Long Body	재고5,792	3A	25V	220mV @ 25mA, 1.4A	-	130 @ 1.4A, 2V	1W	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92NL-A1
BC549B A1G	TSC America Inc.	TRANSISTOR, NPN, 30V, 0.1A, 200A Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고4,304	100mA	30V	-	15nA (ICBO)	200 @ 2mA, 5V	500mW	-	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92
BC548B B1G	TSC America Inc.	TRANSISTOR, NPN, 30V, 0.1A, 200A Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고3,008	100mA	30V	-	15nA (ICBO)	200 @ 2mA, 5V	500mW	-	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
TTC004B,Q	Toshiba Semiconductor and Storage	TRANS NPN 160V 1.5A TO126N Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Power - Max: 10W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126N	패키지: TO-225AA, TO-126-3	재고18,000	1.5A	160V	500mV @ 50mA, 500mA	100nA (ICBO)	140 @ 100mA, 5V	10W	100MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126N
TIP102	Fairchild/ON Semiconductor	TRANS NPN DARL 100V 8A TO-220 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고361,224	8A	100V	2.5V @ 80mA, 8A	50µA	1000 @ 3A, 4V	2W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
MMST4403T146	Rohm Semiconductor	TRANS PNP 40V 0.6A SOT-346 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Power - Max: 200mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	패키지: TO-236-3, SC-59, SOT-23-3	재고495,420	600mA	40V	750mV @ 50mA, 500mA	100nA (ICBO)	100 @ 150mA, 1V	200mW	200MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
2SD1979GSL	Panasonic Electronic Components	TRANS NPN 20V 0.3A SMINI-3 Transistor Type: NPN Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 4mA, 2V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2	패키지: SC-85	재고22,998	300mA	20V	100mV @ 3mA, 30mA	1µA (ICBO)	500 @ 4mA, 2V	150mW	80MHz	150°C (TJ)	Surface Mount	SC-85	SMini3-F2
2N3716	Central Semiconductor Corp	TRANS NPN 80V 10A TO-3 Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 800mV @ 500mA, 5A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V Power - Max: 150W Frequency - Transition: 4MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	패키지: TO-204AA, TO-3	재고7,040	10A	80V	800mV @ 500mA, 5A	-	50 @ 1A, 2V	150W	4MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
JANTX2N3440U4	Microchip Technology	TRANS NPN 250V 2UA U4 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U4	패키지: -	Request a Quote	1 A	250 V	500mV @ 4mA, 50mA	2µA	40 @ 20mA, 10V	800 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	U4
2SA1048-Y-AP	Micro Commercial Co	TRANS PNP 50V 0.15A TO92S Transistor Type: PNP Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200 mW Frequency - Transition: 80MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads) Supplier Device Package: TO-92S	패키지: -	Request a Quote	150 mA	50 V	300mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	200 mW	80MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Short Body (Formed Leads)	TO-92S
2SD1468STPQ	Rohm Semiconductor	TRANS GP BJT NPN 15V 1A 3-PIN SP Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 15 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Power - Max: 300 mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Supplier Device Package: SPT	패키지: -	Request a Quote	1 A	15 V	500mV @ 1mA, 10mA	500nA	180 @ 2mA, 6V	300 mW	-	150°C (TJ)	Through Hole	SC-72 Formed Leads	SPT
BC338-40-AP	Micro Commercial Co	TRANS NPN 25V 0.8A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 300mA, 1V Power - Max: 625 mW Frequency - Transition: 210MHz Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	패키지: -	Request a Quote	800 mA	25 V	700mV @ 50mA, 500mA	200nA	250 @ 300mA, 1V	625 mW	210MHz	-55°C ~ 150°C	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92
BCP54-10TF	Nexperia USA Inc.	BCP54-10T/SOT223/SC-73 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 1.3 W Frequency - Transition: 155MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: -	Request a Quote	1 A	45 V	500mV @ 50mA, 500mA	100nA (ICBO)	63 @ 150mA, 2V	1.3 W	155MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
JANTX2N3700UB-TR	Microchip Technology	TRANS NPN 80V 1A UB Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	1 A	80 V	500mV @ 50mA, 500mA	10nA	50 @ 500mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UB
2SC3752M-CB11	onsemi	BIP NPN 3A 800V Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 800 V Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V Power - Max: 30 W Frequency - Transition: 15MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220ML	패키지: -	Request a Quote	3 A	800 V	2V @ 300mA, 1.5A	10µA (ICBO)	20 @ 200mA, 5V	30 W	15MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220ML
2N3491	Microchip Technology	POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 115 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Stud Mount Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud Supplier Device Package: TO-61	패키지: -	Request a Quote	7 A	80 V	-	-	-	115 W	-	-65°C ~ 200°C (TJ)	Stud Mount	TO-211MA, TO-210AC, TO-61-4, Stud	TO-61
BC848C-C	Diotec Semiconductor	IC Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 200 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: -	Request a Quote	100 mA	30 V	600mV @ 5mA, 100mA	100nA (ICBO)	420 @ 2mA, 5V	200 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
2N3585P	Microchip Technology	POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V Power - Max: 2.5 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	패키지: -	Request a Quote	2 A	300 V	750mV @ 125mA, 1A	5mA	40 @ 100mA, 10V	2.5 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-213AA, TO-66-2	TO-66 (TO-213AA)

BC 817-16 B5003

Infineon Technologies

TRANS NPN 45V 0.5A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 330mW
Frequency - Transition: 170MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고3,504

500mA

45V

700mV @ 50mA, 500mA

100nA (ICBO)

100 @ 100mA, 1V

330mW

170MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

TIP36B

Central Semiconductor Corp

TRANS GENERAL PURPOSE TO-218

Transistor Type: PNP
Current - Collector (Ic) (Max): 25A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Power - Max: 125W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Supplier Device Package: TO-218

패키지: TO-218-3

재고3,680

25A

80V

-

10 @ 15A, 4V

125W

3MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-218-3

TO-218

JANTXV2N6250T1

Microsemi Corporation

TRANS NPN 275V 10A TO-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 275V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
Power - Max: 6W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA

패키지: TO-254-3, TO-254AA (Straight Leads)

재고3,744

10A

275V

1.5V @ 1.25A, 10A

1mA

8 @ 10A, 3V

6W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-254-3, TO-254AA (Straight Leads)

TO-254AA

JANTX2N6250T1

Microsemi Corporation

TRANS NPN 275V 10A TO-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 275V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
Power - Max: 6W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA

패키지: TO-254-3, TO-254AA (Straight Leads)

재고7,824

10A

275V

1.5V @ 1.25A, 10A

1mA

8 @ 10A, 3V

6W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-254-3, TO-254AA (Straight Leads)

TO-254AA

JANTX2N2369AU

Microsemi Corporation

TRANS NPN 15V SMD

Transistor Type: NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: 3-SMD, No Lead

재고7,712

-

15V

450mV @ 10mA, 100mA

400nA

20 @ 100mA, 1V

500mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

BDW54C-S

Bourns Inc.

TRANS PNP DARL 100V 4A

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 4V @ 40mA, 4A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고4,304

4A

100V

4V @ 40mA, 4A

500µA

750 @ 1.5A, 3V

2W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

PN2222ARLRP

ON Semiconductor

TRANS NPN 40V 0.6A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,616

600mA

40V

1V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

625mW

300MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

ESM2030DV

STMicroelectronics

TRANS NPN DARL 300V 67A ISOTOP

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 67A
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.6A, 56A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 56A, 5V
Power - Max: 150W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Supplier Device Package: ISOTOP?

패키지: ISOTOP

재고5,072

67A

300V

1.5V @ 1.6A, 56A

-

300 @ 56A, 5V

150W

-

150°C (TJ)

Chassis Mount

ISOTOP

ISOTOP?

BD158STU

Fairchild/ON Semiconductor

TRANS NPN 300V 0.5A TO-126

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Power - Max: 20W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

패키지: TO-225AA, TO-126-3

재고3,824

500mA

300V

-

100µA (ICBO)

30 @ 50mA, 10V

20W

-

Through Hole

TO-225AA, TO-126-3

TO-126

PN2907ARLRA

ON Semiconductor

TRANS PNP 60V 0.6A TO92

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고2,256

600mA

60V

1.6V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

625mW

200MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2SB15920RA

Panasonic Electronic Components

TRANS PNP 25V 3A TO-92NL

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 25mA, 1.4A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 1.4A, 2V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92NL-A1

패키지: TO-226-3, TO-92-3 Long Body

재고5,792

3A

25V

220mV @ 25mA, 1.4A

-

130 @ 1.4A, 2V

1W

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92NL-A1

BC549B A1G

TSC America Inc.

TRANSISTOR, NPN, 30V, 0.1A, 200A

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고4,304

100mA

30V

-

15nA (ICBO)

200 @ 2mA, 5V

500mW

-

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92

BC548B B1G

TSC America Inc.

TRANSISTOR, NPN, 30V, 0.1A, 200A

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고3,008

100mA

30V

-

15nA (ICBO)

200 @ 2mA, 5V

500mW

-

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

TTC004B,Q

Toshiba Semiconductor and Storage

TRANS NPN 160V 1.5A TO126N

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Power - Max: 10W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126N

패키지: TO-225AA, TO-126-3

재고18,000

1.5A

160V

500mV @ 50mA, 500mA

100nA (ICBO)

140 @ 100mA, 5V

10W

100MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126N

TIP102

Fairchild/ON Semiconductor

TRANS NPN DARL 100V 8A TO-220

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고361,224

8A

100V

2.5V @ 80mA, 8A

50µA

1000 @ 3A, 4V

2W

-

150°C (TJ)

Through Hole

TO-220-3

MMST4403T146

Rohm Semiconductor

TRANS PNP 40V 0.6A SOT-346

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Power - Max: 200mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

패키지: TO-236-3, SC-59, SOT-23-3

재고495,420

600mA

40V

750mV @ 50mA, 500mA

100nA (ICBO)

100 @ 150mA, 1V

200mW

200MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

2SD1979GSL

Panasonic Electronic Components

TRANS NPN 20V 0.3A SMINI-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 4mA, 2V
Power - Max: 150mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2

패키지: SC-85

재고22,998

300mA

20V

100mV @ 3mA, 30mA

1µA (ICBO)

500 @ 4mA, 2V

150mW

80MHz

150°C (TJ)

Surface Mount

SC-85

SMini3-F2

2N3716

Central Semiconductor Corp

TRANS NPN 80V 10A TO-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 500mA, 5A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Power - Max: 150W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

패키지: TO-204AA, TO-3

재고7,040

10A

80V

800mV @ 500mA, 5A

-

50 @ 1A, 2V

150W

4MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

JANTX2N3440U4

Microchip Technology

TRANS NPN 250V 2UA U4

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4

패키지: -

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1 A

250 V

500mV @ 4mA, 50mA

2µA

40 @ 20mA, 10V

800 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

U4

2SA1048-Y-AP

Micro Commercial Co

TRANS PNP 50V 0.15A TO92S

Transistor Type: PNP
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 200 mW
Frequency - Transition: 80MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Supplier Device Package: TO-92S

패키지: -

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150 mA

50 V

300mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

200 mW

80MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Short Body (Formed Leads)

TO-92S

2SD1468STPQ

Rohm Semiconductor

TRANS GP BJT NPN 15V 1A 3-PIN SP

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Power - Max: 300 mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT

패키지: -

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1 A

15 V

500mV @ 1mA, 10mA

500nA

180 @ 2mA, 6V

300 mW

-

150°C (TJ)

Through Hole

SC-72 Formed Leads

SPT

BC338-40-AP

Micro Commercial Co

TRANS NPN 25V 0.8A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 300mA, 1V
Power - Max: 625 mW
Frequency - Transition: 210MHz
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

패키지: -

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800 mA

25 V

700mV @ 50mA, 500mA

200nA

250 @ 300mA, 1V

625 mW

210MHz

-55°C ~ 150°C

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92

BCP54-10TF

Nexperia USA Inc.

BCP54-10T/SOT223/SC-73

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 1.3 W
Frequency - Transition: 155MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: -

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1 A

45 V

500mV @ 50mA, 500mA

100nA (ICBO)

63 @ 150mA, 2V

1.3 W

155MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

JANTX2N3700UB-TR

Microchip Technology

TRANS NPN 80V 1A UB

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB

패키지: -

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1 A

80 V

500mV @ 50mA, 500mA

10nA

50 @ 500mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UB

2SC3752M-CB11

onsemi

BIP NPN 3A 800V

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Power - Max: 30 W
Frequency - Transition: 15MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220ML

패키지: -

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3 A

800 V

2V @ 300mA, 1.5A

10µA (ICBO)

20 @ 200mA, 5V

30 W

15MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220ML

2N3491

Microchip Technology

POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 115 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Supplier Device Package: TO-61

패키지: -

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7 A

80 V

-

115 W

-

-65°C ~ 200°C (TJ)

Stud Mount

TO-211MA, TO-210AC, TO-61-4, Stud

TO-61

BC848C-C

Diotec Semiconductor

IC

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 200 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: -

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100 mA

30 V

600mV @ 5mA, 100mA

100nA (ICBO)

420 @ 2mA, 5V

200 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

2N3585P

Microchip Technology

POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
Power - Max: 2.5 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)

패키지: -

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2 A

300 V

750mV @ 125mA, 1A

5mA

40 @ 100mA, 10V

2.5 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-213AA, TO-66-2

TO-66 (TO-213AA)