페이지 580 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MPSW45AZL1G	ON Semiconductor	TRANS NPN DARL 50V 1A TO-92 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package: TO-92	패키지: TO-226-3, TO-92-3 Long Body (Formed Leads)	재고2,896	1A	50V	1.5V @ 2mA, 1A	100nA (ICBO)	25000 @ 200mA, 5V	1W	100MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body (Formed Leads)	TO-92
FJAF6810ATU	Fairchild/ON Semiconductor	TRANS NPN 750V 10A TO-3PF Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 750V Vce Saturation (Max) @ Ib, Ic: 3V @ 1.5A, 6A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 6A, 5V Power - Max: 60W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-94 Supplier Device Package: TO-3PF	패키지: SC-94	재고4,400	10A	750V	3V @ 1.5A, 6A	1mA	5 @ 6A, 5V	60W	-	150°C (TJ)	Through Hole	SC-94	TO-3PF
KSC2690AYSTSTU	Fairchild/ON Semiconductor	TRANS NPN 160V 1.2A TO-126 Transistor Type: NPN Current - Collector (Ic) (Max): 1.2A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 300mA, 5V Power - Max: 1.2W Frequency - Transition: 155MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	패키지: TO-225AA, TO-126-3	재고2,832	1.2A	160V	700mV @ 200mA, 1A	1µA (ICBO)	160 @ 300mA, 5V	1.2W	155MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126-3
PN2222TAR	Fairchild/ON Semiconductor	TRANS NPN 30V 0.6A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 625mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,408	600mA	30V	1V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	625mW	300MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N5401TA	Fairchild/ON Semiconductor	TRANS PNP 150V 0.6A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Power - Max: 625mW Frequency - Transition: 400MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고23,760	600mA	150V	500mV @ 5mA, 50mA	50nA (ICBO)	60 @ 10mA, 5V	625mW	400MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BUX98APW	STMicroelectronics	TRANS NPN 450V 24A TO-247 Transistor Type: NPN Current - Collector (Ic) (Max): 24A Voltage - Collector Emitter Breakdown (Max): 450V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3.2A, 16A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 200W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고6,208	24A	450V	1.2V @ 3.2A, 16A	2mA	-	200W	-	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
2SD1264AP	Panasonic Electronic Components	TRANS NPN 180V 2A TO-220F Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 2W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F-A1	패키지: TO-220-3 Full Pack	재고3,440	2A	180V	1V @ 50mA, 500mA	50µA (ICBO)	100 @ 150mA, 10V	2W	20MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F-A1
2SC4953	Panasonic Electronic Components	TRANS NPN 400V 3A TO-220D Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 1.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 1.2A, 2V Power - Max: 2W Frequency - Transition: 10MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220D-A1	패키지: TO-220-3 Full Pack	재고79,404	3A	400V	1V @ 300mA, 1.5A	100µA (ICBO)	8 @ 1.2A, 2V	2W	10MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220D-A1
JAN2N2218AL	Microsemi Corporation	TRANS NPN 50V 0.8A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 800mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	패키지: TO-205AA, TO-5-3 Metal Can	재고6,592	800mA	50V	1V @ 50mA, 500mA	10nA	40 @ 150mA, 10V	800mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
SJD112T4G	ON Semiconductor	TRANS NPN DARL 100V 2A DPAK Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,016	-	-	-	-	-	-	-	-	-	-	-
MMST4124T146	Rohm Semiconductor	TRANS NPN 25V 0.2A SOT-346 SMT3 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V Power - Max: - Frequency - Transition: 300MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	패키지: TO-236-3, SC-59, SOT-23-3	재고2,992	200mA	25V	-	-	120 @ 2mA, 1V	-	300MHz	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
50C02SS-TL-E	ON Semiconductor	TRANS NPN 50V 0.4A SSFP Transistor Type: NPN Current - Collector (Ic) (Max): 400mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Power - Max: 200mW Frequency - Transition: 500MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: 3-SSFP	패키지: 3-SMD, Flat Leads	재고5,776	400mA	50V	100mV @ 10mA, 100mA	100nA (ICBO)	300 @ 10mA, 2V	200mW	500MHz	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	3-SSFP
MMBT5087LT3G	ON Semiconductor	TRANS PNP 50V 0.05A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Power - Max: 300mW Frequency - Transition: 40MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고3,600	50mA	50V	300mV @ 1mA, 10mA	50nA (ICBO)	250 @ 100µA, 5V	300mW	40MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
FJPF3305H1TU	Fairchild/ON Semiconductor	TRANS NPN 400V 4A TO-220F Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 19 @ 1A, 5V Power - Max: 30W Frequency - Transition: 4MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	패키지: TO-220-3 Full Pack	재고49,740	4A	400V	1V @ 1A, 4A	1µA (ICBO)	19 @ 1A, 5V	30W	4MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
ST13007D	STMicroelectronics	TRANS NPN 400V 8A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 2V @ 2A, 8A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V Power - Max: 80W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고77,400	8A	400V	2V @ 2A, 8A	100µA	8 @ 5A, 5V	80W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220
2STR2215	STMicroelectronics	TRANS PNP 15V 1.5A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 850mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Power - Max: 500mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고504,000	1.5A	15V	850mV @ 200mA, 2A	100nA (ICBO)	200 @ 500mA, 2V	500mW	-	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BD17910STU	Fairchild/ON Semiconductor	TRANS NPN 80V 3A TO-126 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 30W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	패키지: TO-225AA, TO-126-3	재고25,212	3A	80V	800mV @ 100mA, 1A	100µA (ICBO)	63 @ 150mA, 2V	30W	3MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
BD675AS	Fairchild/ON Semiconductor	TRANS NPN DARL 45V 4A TO-126 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Power - Max: 40W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	패키지: TO-225AA, TO-126-3	재고14,994	4A	45V	2.8V @ 40mA, 2A	500µA	750 @ 2A, 3V	40W	-	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126-3
DXTN07025BFG-7	Diodes Incorporated	TRANS NPN 25V 3A POWERDI3 Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Power - Max: 900 mW Frequency - Transition: 240MHz Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (SWP) Type UX	패키지: -	재고10,740	3 A	25 V	400mV @ 300mA, 3A	20nA (ICBO)	100 @ 1A, 2V	900 mW	240MHz	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerVDFN	PowerDI3333-8 (SWP) Type UX
JAN2N5154P	Microchip Technology	POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	2 A	80 V	1.5V @ 500mA, 5A	50µA	70 @ 2.5A, 5V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JANSH2N2222AUB	Microchip Technology	TRANS NPN 50V 0.8A UB Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	800 mA	50 V	1V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UB
2SB1198HE3-R-TP	Micro Commercial Co	TRANS PNP 80V 0.5A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V Power - Max: 200 mW Frequency - Transition: 180MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	재고7,980	500 mA	80 V	500mV @ 50mA, 500mA	500nA (ICBO)	180 @ 100mA, 3V	200 mW	180MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
BC847CW-SNX	Nexperia USA Inc.	TRANS NPN 45V 0.1A SC70 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 200 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	패키지: -	Request a Quote	100 mA	45 V	400mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	200 mW	100MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70
2SC3143-5-TB-E	onsemi	TRANS NPN 160V 0.08A 3CP Transistor Type: NPN Current - Collector (Ic) (Max): 80 mA Voltage - Collector Emitter Breakdown (Max): 160 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Power - Max: 200 mW Frequency - Transition: 150MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	패키지: -	Request a Quote	80 mA	160 V	700mV @ 3mA, 30mA	100nA (ICBO)	60 @ 10mA, 5V	200 mW	150MHz	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP
BC848A_R1_00001	Panjit International Inc.	TRANS NPN 30V 0.1A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 330 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote	100 mA	30 V	600mV @ 5mA, 100mA	15nA (ICBO)	110 @ 2mA, 5V	330 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
JANTXV2N918UB-TR	Microchip Technology	TRANS NPN 15V 0.05A UB Transistor Type: NPN Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 15 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Power - Max: 200 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	50 mA	15 V	400mV @ 1mA, 10mA	1µA (ICBO)	20 @ 3mA, 1V	200 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
BD438-BP	Micro Commercial Co	TRANS PNP 45V 4A TO126 Transistor Type: PNP Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 1V Power - Max: 1.25 W Frequency - Transition: 3MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	패키지: -	Request a Quote	4 A	45 V	600mV @ 200mA, 2A	100µA	40 @ 2A, 1V	1.25 W	3MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
JANTXV2N3867U4	Microchip Technology	TRANS PNP 40V 3A U4 Transistor Type: PNP Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V Power - Max: 1 W Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U4	패키지: -	Request a Quote	3 A	40 V	1.5V @ 250mA, 2.5A	100µA (ICBO)	40 @ 1.5A, 2V	1 W	-	200°C (TJ)	Surface Mount	3-SMD, No Lead	U4

MPSW45AZL1G

ON Semiconductor

TRANS NPN DARL 50V 1A TO-92

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-92

패키지: TO-226-3, TO-92-3 Long Body (Formed Leads)

재고2,896

1A

50V

1.5V @ 2mA, 1A

100nA (ICBO)

25000 @ 200mA, 5V

1W

100MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body (Formed Leads)

TO-92

FJAF6810ATU

Fairchild/ON Semiconductor

TRANS NPN 750V 10A TO-3PF

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 750V
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.5A, 6A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 6A, 5V
Power - Max: 60W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-94
Supplier Device Package: TO-3PF

패키지: SC-94

재고4,400

10A

750V

3V @ 1.5A, 6A

1mA

5 @ 6A, 5V

60W

-

150°C (TJ)

Through Hole

SC-94

TO-3PF

KSC2690AYSTSTU

Fairchild/ON Semiconductor

TRANS NPN 160V 1.2A TO-126

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.2A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 300mA, 5V
Power - Max: 1.2W
Frequency - Transition: 155MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3

패키지: TO-225AA, TO-126-3

재고2,832

1.2A

160V

700mV @ 200mA, 1A

1µA (ICBO)

160 @ 300mA, 5V

1.2W

155MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126-3

PN2222TAR

Fairchild/ON Semiconductor

TRANS NPN 30V 0.6A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,408

600mA

30V

1V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

625mW

300MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2N5401TA

Fairchild/ON Semiconductor

TRANS PNP 150V 0.6A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 400MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고23,760

600mA

150V

500mV @ 5mA, 50mA

50nA (ICBO)

60 @ 10mA, 5V

625mW

400MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BUX98APW

STMicroelectronics

TRANS NPN 450V 24A TO-247

Transistor Type: NPN
Current - Collector (Ic) (Max): 24A
Voltage - Collector Emitter Breakdown (Max): 450V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3.2A, 16A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 200W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고6,208

24A

450V

1.2V @ 3.2A, 16A

2mA

-

200W

-

150°C (TJ)

Through Hole

TO-247-3

2SD1264AP

Panasonic Electronic Components

TRANS NPN 180V 2A TO-220F

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 180V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 2W
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F-A1

패키지: TO-220-3 Full Pack

재고3,440

2A

180V

1V @ 50mA, 500mA

50µA (ICBO)

100 @ 150mA, 10V

2W

20MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F-A1

2SC4953

Panasonic Electronic Components

TRANS NPN 400V 3A TO-220D

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 1.2A, 2V
Power - Max: 2W
Frequency - Transition: 10MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220D-A1

패키지: TO-220-3 Full Pack

재고79,404

3A

400V

1V @ 300mA, 1.5A

100µA (ICBO)

8 @ 1.2A, 2V

2W

10MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220D-A1

JAN2N2218AL

Microsemi Corporation

TRANS NPN 50V 0.8A TO5

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 800mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5

패키지: TO-205AA, TO-5-3 Metal Can

재고6,592

800mA

50V

1V @ 50mA, 500mA

10nA

40 @ 150mA, 10V

800mW

-

-55°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5

SJD112T4G

ON Semiconductor

TRANS NPN DARL 100V 2A DPAK

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,016

-

MMST4124T146

Rohm Semiconductor

TRANS NPN 25V 0.2A SOT-346 SMT3

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Power - Max: -
Frequency - Transition: 300MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

패키지: TO-236-3, SC-59, SOT-23-3

재고2,992

200mA

25V

-

120 @ 2mA, 1V

-

300MHz

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

50C02SS-TL-E

ON Semiconductor

TRANS NPN 50V 0.4A SSFP

Transistor Type: NPN
Current - Collector (Ic) (Max): 400mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Power - Max: 200mW
Frequency - Transition: 500MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-SSFP

패키지: 3-SMD, Flat Leads

재고5,776

400mA

50V

100mV @ 10mA, 100mA

100nA (ICBO)

300 @ 10mA, 2V

200mW

500MHz

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

3-SSFP

MMBT5087LT3G

ON Semiconductor

TRANS PNP 50V 0.05A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Power - Max: 300mW
Frequency - Transition: 40MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고3,600

50mA

50V

300mV @ 1mA, 10mA

50nA (ICBO)

250 @ 100µA, 5V

300mW

40MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

FJPF3305H1TU

Fairchild/ON Semiconductor

TRANS NPN 400V 4A TO-220F

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 19 @ 1A, 5V
Power - Max: 30W
Frequency - Transition: 4MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F

패키지: TO-220-3 Full Pack

재고49,740

4A

400V

1V @ 1A, 4A

1µA (ICBO)

19 @ 1A, 5V

30W

4MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F

ST13007D

STMicroelectronics

TRANS NPN 400V 8A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 2V @ 2A, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Power - Max: 80W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고77,400

8A

400V

2V @ 2A, 8A

100µA

8 @ 5A, 5V

80W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220

2STR2215

STMicroelectronics

TRANS PNP 15V 1.5A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 850mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고504,000

1.5A

15V

850mV @ 200mA, 2A

100nA (ICBO)

200 @ 500mA, 2V

500mW

-

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BD17910STU

Fairchild/ON Semiconductor

TRANS NPN 80V 3A TO-126

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 30W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

패키지: TO-225AA, TO-126-3

재고25,212

3A

80V

800mV @ 100mA, 1A

100µA (ICBO)

63 @ 150mA, 2V

30W

3MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

BD675AS

Fairchild/ON Semiconductor

TRANS NPN DARL 45V 4A TO-126

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Power - Max: 40W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3

패키지: TO-225AA, TO-126-3

재고14,994

4A

45V

2.8V @ 40mA, 2A

500µA

750 @ 2A, 3V

40W

-

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126-3

DXTN07025BFG-7

Diodes Incorporated

TRANS NPN 25V 3A POWERDI3

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Power - Max: 900 mW
Frequency - Transition: 240MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (SWP) Type UX

패키지: -

재고10,740

3 A

25 V

400mV @ 300mA, 3A

20nA (ICBO)

100 @ 1A, 2V

900 mW

240MHz

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerVDFN

PowerDI3333-8 (SWP) Type UX

JAN2N5154P

Microchip Technology

POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

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2 A

80 V

1.5V @ 500mA, 5A

50µA

70 @ 2.5A, 5V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

JANSH2N2222AUB

Microchip Technology

TRANS NPN 50V 0.8A UB

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB

패키지: -

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800 mA

50 V

1V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UB

2SB1198HE3-R-TP

Micro Commercial Co

TRANS PNP 80V 0.5A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
Power - Max: 200 mW
Frequency - Transition: 180MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

재고7,980

500 mA

80 V

500mV @ 50mA, 500mA

500nA (ICBO)

180 @ 100mA, 3V

200 mW

180MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

BC847CW-SNX

Nexperia USA Inc.

TRANS NPN 45V 0.1A SC70

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 200 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

패키지: -

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100 mA

45 V

400mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

200 mW

100MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70

2SC3143-5-TB-E

onsemi

TRANS NPN 160V 0.08A 3CP

Transistor Type: NPN
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 200 mW
Frequency - Transition: 150MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP

패키지: -

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80 mA

160 V

700mV @ 3mA, 30mA

100nA (ICBO)

60 @ 10mA, 5V

200 mW

150MHz

125°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CP

BC848A_R1_00001

Panjit International Inc.

TRANS NPN 30V 0.1A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 330 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

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100 mA

30 V

600mV @ 5mA, 100mA

15nA (ICBO)

110 @ 2mA, 5V

330 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

JANTXV2N918UB-TR

Microchip Technology

TRANS NPN 15V 0.05A UB

Transistor Type: NPN
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Power - Max: 200 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

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50 mA

15 V

400mV @ 1mA, 10mA

1µA (ICBO)

20 @ 3mA, 1V

200 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

BD438-BP

Micro Commercial Co

TRANS PNP 45V 4A TO126

Transistor Type: PNP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 1V
Power - Max: 1.25 W
Frequency - Transition: 3MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

패키지: -

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4 A

45 V

600mV @ 200mA, 2A

100µA

40 @ 2A, 1V

1.25 W

3MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

JANTXV2N3867U4

Microchip Technology

TRANS PNP 40V 3A U4

Transistor Type: PNP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4

패키지: -

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3 A

40 V

1.5V @ 250mA, 2.5A

100µA (ICBO)

40 @ 1.5A, 2V

1 W

-

200°C (TJ)

Surface Mount

3-SMD, No Lead

U4