페이지 65 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BCX51E6327HTSA1	Infineon Technologies	TRANS PNP 45V 1A SOT-89 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Power - Max: 2W Frequency - Transition: 125MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PG-SOT89	패키지: TO-243AA	재고2,848	1A	45V	500mV @ 50mA, 500mA	100nA (ICBO)	40 @ 150mA, 2V	2W	125MHz	150°C (TJ)	Surface Mount	TO-243AA	PG-SOT89
BC557B_D11Z	Fairchild/ON Semiconductor	TRANS PNP 45V 0.1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,248	100mA	45V	650mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	500mW	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC560CTAR	Fairchild/ON Semiconductor	TRANS PNP 45V 0.1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고4,800	100mA	45V	650mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	500mW	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MPSW05G	ON Semiconductor	TRANS NPN 60V 0.5A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V Power - Max: 1W Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92	패키지: TO-226-3, TO-92-3 Long Body	재고4,112	500mA	60V	400mV @ 10mA, 250mA	500nA	60 @ 250mA, 1V	1W	50MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92
MJF15030	ON Semiconductor	TRANS NPN 150V 8A TO220FP Transistor Type: NPN Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V Power - Max: 2W Frequency - Transition: 30MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP	패키지: TO-220-3 Full Pack	재고4,864	8A	150V	500mV @ 100mA, 1A	10µA	20 @ 4A, 2V	2W	30MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FP
2SD23750P	Panasonic Electronic Components	TRANS NPN 60V 3A TO-220D Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 4V Power - Max: 2W Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220D-A1	패키지: TO-220-3 Full Pack	재고3,792	3A	60V	1V @ 50mA, 2A	100µA	800 @ 500mA, 4V	2W	50MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220D-A1
2N2907AL	Microsemi Corporation	TRANS PNP 60V 0.6A TO-18 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	패키지: TO-206AA, TO-18-3 Metal Can	재고6,960	600mA	60V	1.6V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
BD136	STMicroelectronics	TRANS PNP 45V 1.5A SOT-32 Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2V, 150MA Power - Max: 1.25W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: SOT-32	패키지: TO-225AA, TO-126-3	재고1,985,208	1.5A	45V	500mV @ 50mA, 500mA	100nA (ICBO)	40 @ 2V, 150MA	1.25W	-	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	SOT-32
BU941ZT	STMicroelectronics	TRANS NPN DARL 350V 15A TO-220 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 1.8V @ 250mA, 10A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V Power - Max: 150W Frequency - Transition: - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고17,880	15A	350V	1.8V @ 250mA, 10A	100µA	300 @ 5A, 10V	150W	-	175°C (TJ)	Through Hole	TO-220-3	TO-220AB
2SC4027S-TL-E	ON Semiconductor	TRANS NPN 160V 1.5A TP-FA Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: 2-TP-FA	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고160,920	1.5A	160V	450mV @ 50mA, 500mA	1µA (ICBO)	100 @ 100mA, 5V	1W	120MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	2-TP-FA
FJX733YTF	Fairchild/ON Semiconductor	TRANS PNP 50V 0.15A SOT-323 Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 200mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고2,032	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	120 @ 1mA, 6V	200mW	180MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
SMMBTA56LT1G	ON Semiconductor	TRANS PNP 80V 0.5A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 225mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고36,000	500mA	80V	250mV @ 10mA, 100mA	100nA	100 @ 100mA, 1V	225mW	50MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
ZTX869	Diodes Incorporated	TRANS NPN 25V 5A E-LINE Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 1V Power - Max: 1.2W Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3	재고1,256,964	5A	25V	220mV @ 100mA, 5A	50nA (ICBO)	300 @ 1A, 1V	1.2W	100MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3	E-Line (TO-92 compatible)
DSS3540M-7B	Diodes Incorporated	TRANS PNP 40V 0.5A DFN1006-3 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V Power - Max: 250mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Supplier Device Package: 3-DFN1006 (1.0x0.6)	패키지: 3-UFDFN	재고89,808	500mA	40V	350mV @ 50mA, 500mA	100nA	150 @ 100mA, 2V	250mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	3-UFDFN	3-DFN1006 (1.0x0.6)
ZTX951	Diodes Incorporated	TRANS PNP 60V 4A E-LINE Transistor Type: PNP Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 400mA, 4A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 1.2W Frequency - Transition: 120MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3	재고235,164	4A	60V	300mV @ 400mA, 4A	50nA (ICBO)	100 @ 1A, 1V	1.2W	120MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3	E-Line (TO-92 compatible)
FZT491AQTA	Diodes Incorporated	TRANS NPN 40V 1A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Power - Max: 3 W Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: -	재고3,000	1 A	40 V	500mV @ 100mA, 1A	100nA	300 @ 500mA, 5V	3 W	150MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
JANKCBD2N3439	Microchip Technology	RH POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 800 mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	1 A	350 V	500mV @ 4mA, 50mA	2µA	40 @ 20mA, 10V	800 mW	-	-55°C ~ 200°C	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
NTE289A	NTE Electronics, Inc	TRANS NPN 80V 0.5A TO92 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 40mA, 400mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Power - Max: 600 mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	Request a Quote	500 mA	80 V	600mV @ 40mA, 400mA	1µA (ICBO)	100 @ 50mA, 5V	600 mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
2N5663U3	Microchip Technology	POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANTX2N918UB-TR	Microchip Technology	TRANS NPN 15V 0.05A UB Transistor Type: NPN Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 15 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Power - Max: 200 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	50 mA	15 V	400mV @ 1mA, 10mA	1µA (ICBO)	20 @ 3mA, 1V	200 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UB
BCP56-10-TP	Micro Commercial Co	TRANS NPN 80V 1A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 1.5 W Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: -	Request a Quote	1 A	80 V	500mV @ 50mA, 500mA	100nA (ICBO)	63 @ 150mA, 2V	1.5 W	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
2N6301	Microchip Technology	NPN TRANSISTOR Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Power - Max: 75 W Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	패키지: -	재고459	8 A	80 V	3V @ 80mA, 8A	500µA	750 @ 4A, 3V	75 W	-	-55°C ~ 200°C (TJ)	Through Hole	TO-213AA, TO-66-2	TO-66 (TO-213AA)
2N6249	Microsemi Corporation	NPN TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 200 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V Power - Max: 6 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AA (TO-3)	패키지: -	Request a Quote	10 A	200 V	1.5V @ 1A, 10A	1mA	10 @ 10A, 3V	6 W	-	-65°C ~ 200°C	Through Hole	TO-204AA, TO-3	TO-204AA (TO-3)
JANTX2N5671	Microchip Technology	TRANS NPN 90V 30A TO3 Transistor Type: NPN Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 90 V Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A Current - Collector Cutoff (Max): 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20A, 5V Power - Max: 6 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	패키지: -	Request a Quote	30 A	90 V	5V @ 6A, 30A	10mA	20 @ 20A, 5V	6 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
2C4240	Microchip Technology	POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SD874-Q-TP	Micro Commercial Co	TRANS NPN 25V 1A SOT89 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 10V Power - Max: 500 mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	Request a Quote	1 A	25 V	400mV @ 50mA, 500mA	100nA (ICBO)	85 @ 500mA, 10V	500 mW	200MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
BC337-16	Diotec Semiconductor	BJT TO-92 45V 800MA NPN 0.625W 1 Transistor Type: NPN Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	Request a Quote	800 mA	45 V	700mV @ 50mA, 500mA	100nA	100 @ 100mA, 1V	625 mW	100MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
2SD1388TP-4-SY	Sanyo	NPN EPITAXIAL PLANAR SILICON Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

BCX51E6327HTSA1

Infineon Technologies

TRANS PNP 45V 1A SOT-89

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 2W
Frequency - Transition: 125MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PG-SOT89

패키지: TO-243AA

재고2,848

1A

45V

500mV @ 50mA, 500mA

100nA (ICBO)

40 @ 150mA, 2V

2W

125MHz

150°C (TJ)

Surface Mount

TO-243AA

PG-SOT89

BC557B_D11Z

Fairchild/ON Semiconductor

TRANS PNP 45V 0.1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,248

100mA

45V

650mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

500mW

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC560CTAR

Fairchild/ON Semiconductor

TRANS PNP 45V 0.1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고4,800

100mA

45V

650mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

500mW

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MPSW05G

ON Semiconductor

TRANS NPN 60V 0.5A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Power - Max: 1W
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92

패키지: TO-226-3, TO-92-3 Long Body

재고4,112

500mA

60V

400mV @ 10mA, 250mA

500nA

60 @ 250mA, 1V

1W

50MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92

MJF15030

ON Semiconductor

TRANS NPN 150V 8A TO220FP

Transistor Type: NPN
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Power - Max: 2W
Frequency - Transition: 30MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP

패키지: TO-220-3 Full Pack

재고4,864

8A

150V

500mV @ 100mA, 1A

10µA

20 @ 4A, 2V

2W

30MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220FP

2SD23750P

Panasonic Electronic Components

TRANS NPN 60V 3A TO-220D

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 4V
Power - Max: 2W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220D-A1

패키지: TO-220-3 Full Pack

재고3,792

3A

60V

1V @ 50mA, 2A

100µA

800 @ 500mA, 4V

2W

50MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220D-A1

2N2907AL

Microsemi Corporation

TRANS PNP 60V 0.6A TO-18

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

패키지: TO-206AA, TO-18-3 Metal Can

재고6,960

600mA

60V

1.6V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

500mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

BD136

STMicroelectronics

TRANS PNP 45V 1.5A SOT-32

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2V, 150MA
Power - Max: 1.25W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: SOT-32

패키지: TO-225AA, TO-126-3

재고1,985,208

1.5A

45V

500mV @ 50mA, 500mA

100nA (ICBO)

40 @ 2V, 150MA

1.25W

-

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

SOT-32

BU941ZT

STMicroelectronics

TRANS NPN DARL 350V 15A TO-220

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 250mA, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
Power - Max: 150W
Frequency - Transition: -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고17,880

15A

350V

1.8V @ 250mA, 10A

100µA

300 @ 5A, 10V

150W

-

175°C (TJ)

Through Hole

TO-220-3

TO-220AB

2SC4027S-TL-E

ON Semiconductor

TRANS NPN 160V 1.5A TP-FA

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: 2-TP-FA

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고160,920

1.5A

160V

450mV @ 50mA, 500mA

1µA (ICBO)

100 @ 100mA, 5V

1W

120MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

2-TP-FA

FJX733YTF

Fairchild/ON Semiconductor

TRANS PNP 50V 0.15A SOT-323

Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 200mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고2,032

150mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

120 @ 1mA, 6V

200mW

180MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

SMMBTA56LT1G

ON Semiconductor

TRANS PNP 80V 0.5A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 225mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고36,000

500mA

80V

250mV @ 10mA, 100mA

100nA

100 @ 100mA, 1V

225mW

50MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

ZTX869

Diodes Incorporated

TRANS NPN 25V 5A E-LINE

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 1V
Power - Max: 1.2W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3

재고1,256,964

5A

25V

220mV @ 100mA, 5A

50nA (ICBO)

300 @ 1A, 1V

1.2W

100MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3

E-Line (TO-92 compatible)

DSS3540M-7B

Diodes Incorporated

TRANS PNP 40V 0.5A DFN1006-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Supplier Device Package: 3-DFN1006 (1.0x0.6)

패키지: 3-UFDFN

재고89,808

500mA

40V

350mV @ 50mA, 500mA

100nA

150 @ 100mA, 2V

250mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

3-UFDFN

3-DFN1006 (1.0x0.6)

ZTX951

Diodes Incorporated

TRANS PNP 60V 4A E-LINE

Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 400mA, 4A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Power - Max: 1.2W
Frequency - Transition: 120MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3

재고235,164

4A

60V

300mV @ 400mA, 4A

50nA (ICBO)

100 @ 1A, 1V

1.2W

120MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3

E-Line (TO-92 compatible)

FZT491AQTA

Diodes Incorporated

TRANS NPN 40V 1A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Power - Max: 3 W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: -

재고3,000

1 A

40 V

500mV @ 100mA, 1A

100nA

300 @ 500mA, 5V

3 W

150MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

JANKCBD2N3439

Microchip Technology

RH POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Power - Max: 800 mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

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1 A

350 V

500mV @ 4mA, 50mA

2µA

40 @ 20mA, 10V

800 mW

-

-55°C ~ 200°C

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

NTE289A

NTE Electronics, Inc

TRANS NPN 80V 0.5A TO92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Power - Max: 600 mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

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500 mA

80 V

600mV @ 40mA, 400mA

1µA (ICBO)

100 @ 50mA, 5V

600 mW

120MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

2N5663U3

Microchip Technology

POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

JANTX2N918UB-TR

Microchip Technology

TRANS NPN 15V 0.05A UB

Transistor Type: NPN
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Power - Max: 200 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB

패키지: -

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50 mA

15 V

400mV @ 1mA, 10mA

1µA (ICBO)

20 @ 3mA, 1V

200 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UB

BCP56-10-TP

Micro Commercial Co

TRANS NPN 80V 1A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 1.5 W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: -

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1 A

80 V

500mV @ 50mA, 500mA

100nA (ICBO)

63 @ 150mA, 2V

1.5 W

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

2N6301

Microchip Technology

NPN TRANSISTOR

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Power - Max: 75 W
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)

패키지: -

재고459

8 A

80 V

3V @ 80mA, 8A

500µA

750 @ 4A, 3V

75 W

-

-55°C ~ 200°C (TJ)

Through Hole

TO-213AA, TO-66-2

TO-66 (TO-213AA)

2N6249

Microsemi Corporation

NPN TRANSISTOR

Transistor Type: NPN
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
Power - Max: 6 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)

패키지: -

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10 A

200 V

1.5V @ 1A, 10A

1mA

10 @ 10A, 3V

6 W

-

-65°C ~ 200°C

Through Hole

TO-204AA, TO-3

TO-204AA (TO-3)

JANTX2N5671

Microchip Technology

TRANS NPN 90V 30A TO3

Transistor Type: NPN
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20A, 5V
Power - Max: 6 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

패키지: -

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30 A

90 V

5V @ 6A, 30A

10mA

20 @ 20A, 5V

6 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

2C4240

Microchip Technology

POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SD874-Q-TP

Micro Commercial Co

TRANS NPN 25V 1A SOT89

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 10V
Power - Max: 500 mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

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1 A

25 V

400mV @ 50mA, 500mA

100nA (ICBO)

85 @ 500mA, 10V

500 mW

200MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

BC337-16

Diotec Semiconductor

BJT TO-92 45V 800MA NPN 0.625W 1

Transistor Type: NPN
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 625 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

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800 mA

45 V

700mV @ 50mA, 500mA

100nA

100 @ 100mA, 1V

625 mW

100MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

2SD1388TP-4-SY

Sanyo

NPN EPITAXIAL PLANAR SILICON

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-