페이지 654 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SA1020-Y(6MBH1,AF	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	패키지: TO-226-3, TO-92-3 Long Body	재고5,184	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
MPSA42RLRP	ON Semiconductor	TRANS NPN 300V 0.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V Power - Max: 625mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,520	500mA	300V	500mV @ 2mA, 20mA	100nA (ICBO)	25 @ 1mA, 10V	625mW	50MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BSV52LT1	ON Semiconductor	TRANS NPN 12V 0.1A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Power - Max: 225mW Frequency - Transition: 400MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고2,480	100mA	12V	400mV @ 5mA, 50mA	100nA (ICBO)	40 @ 10mA, 1V	225mW	400MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
BD1406STU	Fairchild/ON Semiconductor	TRANS PNP 80V 1.5A TO-126 Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Power - Max: 1.25W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	패키지: TO-225AA, TO-126-3	재고3,808	1.5A	80V	500mV @ 50mA, 500mA	100nA (ICBO)	40 @ 150mA, 2V	1.25W	-	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
BC239CTA	Fairchild/ON Semiconductor	TRANS NPN 25V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고7,488	100mA	25V	600mV @ 5mA, 100mA	15nA	380 @ 2mA, 5V	500mW	250MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
ZXT1M322TA	Diodes Incorporated	TRANS PNP 12V 4A 2X2MM 3-MLP Transistor Type: PNP Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 300mV @ 150mA, 4A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2.5A, 2V Power - Max: 3W Frequency - Transition: 110MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerSMD, Flat Leads Supplier Device Package: 3-MLP/DFN (2x2)	패키지: 3-PowerSMD, Flat Leads	재고754,068	4A	12V	300mV @ 150mA, 4A	25nA	180 @ 2.5A, 2V	3W	110MHz	-55°C ~ 150°C (TJ)	Surface Mount	3-PowerSMD, Flat Leads	3-MLP/DFN (2x2)
ZTX853STZ	Diodes Incorporated	TRANS NPN 100V 4A E-LINE Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 200mV @ 400mA, 4A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Power - Max: 1.2W Frequency - Transition: 130MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3 Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3	재고5,216	4A	100V	200mV @ 400mA, 4A	50nA (ICBO)	100 @ 2A, 2V	1.2W	130MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3	E-Line (TO-92 compatible)
BUJD203AX,127	WeEn Semiconductors	TRANS NPN 425V 4A TO-220F Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 425V Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1mA, 5V Power - Max: 26W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: TO-220F	패키지: TO-220-3 Full Pack, Isolated Tab	재고3,360	4A	425V	1V @ 600mA, 3A	2mA	10 @ 1mA, 5V	26W	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack, Isolated Tab	TO-220F
BC858CLT3G	ON Semiconductor	TRANS PNP 30V 0.1A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고5,952	100mA	30V	650mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	300mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
BF723,115	Nexperia USA Inc.	TRANS PNP 250V 0.1A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 250V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V Power - Max: 1.2W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고4,192	100mA	250V	600mV @ 5mA, 30mA	10nA (ICBO)	50 @ 25mA, 20V	1.2W	60MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
MMBT123S-7-F	Diodes Incorporated	TRANS NPN 18V 1A SOT23-3 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 18V Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 300mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 1V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고385,200	1A	18V	500mV @ 30mA, 300mA	1µA (ICBO)	150 @ 100mA, 1V	300mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
PZT2907AT1G	ON Semiconductor	TRANS PNP 60V 0.6A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1.5W Frequency - Transition: 200MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고697,980	600mA	60V	1.6V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	1.5W	200MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
2N2222AUA	TT Electronics/Optek Technology	TRANS NPN 50V 0.8A SMD Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-CLCC Supplier Device Package: Ceramic SMD	패키지: 4-CLCC	재고20,856	800mA	50V	1V @ 50mA, 500mA	50nA	75 @ 1mA, 10V	500mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-CLCC	Ceramic SMD
NTE2348	NTE Electronics, Inc	TRANS NPN 800V 12A TO3P Transistor Type: NPN Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 800 V Vce Saturation (Max) @ Ib, Ic: 2V @ 1.2mA, 6A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 800mA, 5V Power - Max: 150 W Frequency - Transition: 15MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	패키지: -	Request a Quote	12 A	800 V	2V @ 1.2mA, 6A	10µA (ICBO)	10 @ 800mA, 5V	150 W	15MHz	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
JANSR2N2907AUB	Microchip Technology	TRANS PNP 60V 0.6A UB Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	600 mA	60 V	1.6V @ 50mA, 500mA	50nA	100 @ 1mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
BC846C-AQ	Diotec Semiconductor	IC Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 250 mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: -	Request a Quote	100 mA	65 V	600mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	250 mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
JANKCBL2N2907A	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	패키지: -	Request a Quote	600 mA	60 V	1.6V @ 50mA, 500mA	50nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
BC857AQCZ	Nexperia USA Inc.	TRANS PNP 45V 0.1A DFN1412D-3 Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 850mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Power - Max: 360 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1412D-3	패키지: -	재고15,000	100 mA	45 V	850mV @ 5mA, 100mA	15nA (ICBO)	125 @ 2mA, 5V	360 mW	100MHz	150°C (TJ)	Surface Mount, Wettable Flank	3-XDFN Exposed Pad	DFN1412D-3
2SD1898-R-TP	Micro Commercial Co	Interface Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V Power - Max: 500 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	Request a Quote	1 A	80 V	400mV @ 20mA, 500mA	1µA (ICBO)	82 @ 500mA, 3V	500 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
MMBTA92-AQ	Diotec Semiconductor	IC Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 10V Power - Max: 250 mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: -	Request a Quote	500 mA	300 V	500mV @ 2mA, 20mA	250nA (ICBO)	80 @ 10mA, 10V	250 mW	50MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
AS9013-L-HF	Comchip Technology	TRANS NPN 25V 0.5A SOT23-3 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V Power - Max: 300 mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	500 mA	25 V	600mV @ 50mA, 500mA	100nA	120 @ 50mA, 1V	300 mW	150MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2N3724UB-TR	Microchip Technology	TRANS TO5 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
BC869-TP	Micro Commercial Co	Interface Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Power - Max: 500 mW Frequency - Transition: 40MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	Request a Quote	1 A	20 V	500mV @ 100mA, 1A	100nA (ICBO)	100 @ 500mA, 1V	500 mW	40MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
JANS2N5005	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Power - Max: 2 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Stud Mount Package / Case: TO-210AA, TO-59-4, Stud Supplier Device Package: TO-59	패키지: -	Request a Quote	5 A	80 V	1.5V @ 500mA, 5A	50µA	70 @ 2.5A, 5V	2 W	-	-65°C ~ 200°C (TJ)	Stud Mount	TO-210AA, TO-59-4, Stud	TO-59
2C2369A-MSCL	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2N4908	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 150 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AD (TO-3)	패키지: -	Request a Quote	10 A	60 V	-	-	-	150 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-204AD (TO-3)
DXTP5820CFDB-7	Diodes Incorporated	TRANS PNP 20V 6A 3DFN Transistor Type: PNP Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 20 V Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Power - Max: 690 mW Frequency - Transition: 140MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UDFN Exposed Pad Supplier Device Package: U-DFN2020-3 (Type B)	패키지: -	재고5,040	6 A	20 V	350mV @ 300mA, 6A	100nA	200 @ 1A, 2V	690 mW	140MHz	-55°C ~ 150°C (TJ)	Surface Mount	3-UDFN Exposed Pad	U-DFN2020-3 (Type B)
BC807-40-13P	Micro Commercial Co	Interface Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 300 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote	500 mA	45 V	700mV @ 50mA, 500mA	200nA	250 @ 100mA, 1V	300 mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23

2SA1020-Y(6MBH1,AF

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

패키지: TO-226-3, TO-92-3 Long Body

재고5,184

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

MPSA42RLRP

ON Semiconductor

TRANS NPN 300V 0.5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V
Power - Max: 625mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,520

500mA

300V

500mV @ 2mA, 20mA

100nA (ICBO)

25 @ 1mA, 10V

625mW

50MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BSV52LT1

ON Semiconductor

TRANS NPN 12V 0.1A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Power - Max: 225mW
Frequency - Transition: 400MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고2,480

100mA

12V

400mV @ 5mA, 50mA

100nA (ICBO)

40 @ 10mA, 1V

225mW

400MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

BD1406STU

Fairchild/ON Semiconductor

TRANS PNP 80V 1.5A TO-126

Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 1.25W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

패키지: TO-225AA, TO-126-3

재고3,808

1.5A

80V

500mV @ 50mA, 500mA

100nA (ICBO)

40 @ 150mA, 2V

1.25W

-

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

BC239CTA

Fairchild/ON Semiconductor

TRANS NPN 25V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고7,488

100mA

25V

600mV @ 5mA, 100mA

15nA

380 @ 2mA, 5V

500mW

250MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

ZXT1M322TA

Diodes Incorporated

TRANS PNP 12V 4A 2X2MM 3-MLP

Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 150mA, 4A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2.5A, 2V
Power - Max: 3W
Frequency - Transition: 110MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Supplier Device Package: 3-MLP/DFN (2x2)

패키지: 3-PowerSMD, Flat Leads

재고754,068

4A

12V

300mV @ 150mA, 4A

25nA

180 @ 2.5A, 2V

3W

110MHz

-55°C ~ 150°C (TJ)

Surface Mount

3-PowerSMD, Flat Leads

3-MLP/DFN (2x2)

ZTX853STZ

Diodes Incorporated

TRANS NPN 100V 4A E-LINE

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 400mA, 4A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Power - Max: 1.2W
Frequency - Transition: 130MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3

재고5,216

4A

100V

200mV @ 400mA, 4A

50nA (ICBO)

100 @ 2A, 2V

1.2W

130MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3

E-Line (TO-92 compatible)

BUJD203AX,127

WeEn Semiconductors

TRANS NPN 425V 4A TO-220F

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 425V
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1mA, 5V
Power - Max: 26W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220F

패키지: TO-220-3 Full Pack, Isolated Tab

재고3,360

4A

425V

1V @ 600mA, 3A

2mA

10 @ 1mA, 5V

26W

-

150°C (TJ)

Through Hole

TO-220-3 Full Pack, Isolated Tab

TO-220F

BC858CLT3G

ON Semiconductor

TRANS PNP 30V 0.1A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고5,952

100mA

30V

650mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

300mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

BF723,115

Nexperia USA Inc.

TRANS PNP 250V 0.1A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Power - Max: 1.2W
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고4,192

100mA

250V

600mV @ 5mA, 30mA

10nA (ICBO)

50 @ 25mA, 20V

1.2W

60MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

MMBT123S-7-F

Diodes Incorporated

TRANS NPN 18V 1A SOT23-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 18V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 1V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고385,200

1A

18V

500mV @ 30mA, 300mA

1µA (ICBO)

150 @ 100mA, 1V

300mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

PZT2907AT1G

ON Semiconductor

TRANS PNP 60V 0.6A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1.5W
Frequency - Transition: 200MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고697,980

600mA

60V

1.6V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

1.5W

200MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

2N2222AUA

TT Electronics/Optek Technology

TRANS NPN 50V 0.8A SMD

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-CLCC
Supplier Device Package: Ceramic SMD

패키지: 4-CLCC

재고20,856

800mA

50V

1V @ 50mA, 500mA

50nA

75 @ 1mA, 10V

500mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-CLCC

Ceramic SMD

NTE2348

NTE Electronics, Inc

TRANS NPN 800V 12A TO3P

Transistor Type: NPN
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Vce Saturation (Max) @ Ib, Ic: 2V @ 1.2mA, 6A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 800mA, 5V
Power - Max: 150 W
Frequency - Transition: 15MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

패키지: -

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12 A

800 V

2V @ 1.2mA, 6A

10µA (ICBO)

10 @ 800mA, 5V

150 W

15MHz

150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

JANSR2N2907AUB

Microchip Technology

TRANS PNP 60V 0.6A UB

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

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600 mA

60 V

1.6V @ 50mA, 500mA

50nA

100 @ 1mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

BC846C-AQ

Diotec Semiconductor

IC

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 250 mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: -

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100 mA

65 V

600mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

250 mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

JANKCBL2N2907A

Microchip Technology

RH SMALL-SIGNAL BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

패키지: -

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600 mA

60 V

1.6V @ 50mA, 500mA

50nA

100 @ 150mA, 10V

500 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

BC857AQCZ

Nexperia USA Inc.

TRANS PNP 45V 0.1A DFN1412D-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 850mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Power - Max: 360 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1412D-3

패키지: -

재고15,000

100 mA

45 V

850mV @ 5mA, 100mA

15nA (ICBO)

125 @ 2mA, 5V

360 mW

100MHz

150°C (TJ)

Surface Mount, Wettable Flank

3-XDFN Exposed Pad

DFN1412D-3

2SD1898-R-TP

Micro Commercial Co

Interface

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V
Power - Max: 500 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

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1 A

80 V

400mV @ 20mA, 500mA

1µA (ICBO)

82 @ 500mA, 3V

500 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

MMBTA92-AQ

Diotec Semiconductor

IC

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 10V
Power - Max: 250 mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: -

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500 mA

300 V

500mV @ 2mA, 20mA

250nA (ICBO)

80 @ 10mA, 10V

250 mW

50MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

AS9013-L-HF

Comchip Technology

TRANS NPN 25V 0.5A SOT23-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
Power - Max: 300 mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

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500 mA

25 V

600mV @ 50mA, 500mA

100nA

120 @ 50mA, 1V

300 mW

150MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2N3724UB-TR

Microchip Technology

TRANS TO5

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

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-

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

BC869-TP

Micro Commercial Co

Interface

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Power - Max: 500 mW
Frequency - Transition: 40MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

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1 A

20 V

500mV @ 100mA, 1A

100nA (ICBO)

100 @ 500mA, 1V

500 mW

40MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

JANS2N5005

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Power - Max: 2 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: TO-210AA, TO-59-4, Stud
Supplier Device Package: TO-59

패키지: -

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5 A

80 V

1.5V @ 500mA, 5A

50µA

70 @ 2.5A, 5V

2 W

-

-65°C ~ 200°C (TJ)

Stud Mount

TO-210AA, TO-59-4, Stud

TO-59

2C2369A-MSCL

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

2N4908

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 150 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AD (TO-3)

패키지: -

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10 A

60 V

-

150 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-204AD (TO-3)

DXTP5820CFDB-7

Diodes Incorporated

TRANS PNP 20V 6A 3DFN

Transistor Type: PNP
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Power - Max: 690 mW
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-3 (Type B)

패키지: -

재고5,040

6 A

20 V

350mV @ 300mA, 6A

100nA

200 @ 1A, 2V

690 mW

140MHz

-55°C ~ 150°C (TJ)

Surface Mount

3-UDFN Exposed Pad

U-DFN2020-3 (Type B)

BC807-40-13P

Micro Commercial Co

Interface

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 300 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

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500 mA

45 V

700mV @ 50mA, 500mA

200nA

250 @ 100mA, 1V

300 mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23