페이지 666 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BDP953E6327HTSA1	Infineon Technologies	TRANS NPN 100V 3A SOT-223 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Power - Max: 5W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	패키지: TO-261-4, TO-261AA	재고6,320	3A	100V	500mV @ 200mA, 2A	100nA (ICBO)	100 @ 500mA, 1V	5W	100MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4
JANS2N6193	Microsemi Corporation	TRANS PNP 100V 5A TO-39 Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: TO-205AD, TO-39-3 Metal Can	재고3,440	5A	100V	1.2V @ 500mA, 5A	100µA	60 @ 2A, 2V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
BD743C-S	Bourns Inc.	TRANS NPN 100V 15A Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 5A, 15A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V Power - Max: 2W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고5,808	15A	100V	3V @ 5A, 15A	100µA	20 @ 5A, 4V	2W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
2STL2580	STMicroelectronics	TRANS NPN 400V 1A TO-92MOD Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 5V Power - Max: 1.5W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	패키지: TO-226-3, TO-92-3 Long Body	재고2,720	1A	400V	1V @ 200mA, 1A	10µA (ICBO)	60 @ 250mA, 5V	1.5W	-	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SB1679G0L	Panasonic Electronic Components	TRANS PNP 10V 0.5A SMINI-3 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 10V Vce Saturation (Max) @ Ib, Ic: 300mV @ 8mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 2V Power - Max: 150mW Frequency - Transition: 130MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2	패키지: SC-85	재고4,944	500mA	10V	300mV @ 8mA, 400mA	100nA (ICBO)	130 @ 500mA, 2V	150mW	130MHz	150°C (TJ)	Surface Mount	SC-85	SMini3-F2
PN4250_D75Z	Fairchild/ON Semiconductor	TRANS PNP 40V 0.5A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,984	500mA	40V	250mV @ 500µA, 10mA	10nA (ICBO)	250 @ 100µA, 5V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC212_D27Z	Fairchild/ON Semiconductor	TRANS PNP 50V 0.3A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V Power - Max: 625mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,072	300mA	50V	600mV @ 5mA, 100mA	15nA (ICBO)	60 @ 2mA, 5V	625mW	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC327TA	Fairchild/ON Semiconductor	TRANS PNP 45V 0.8A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고6,688	800mA	45V	700mV @ 50mA, 500mA	100nA	100 @ 100mA, 1V	625mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC557	Fairchild/ON Semiconductor	TRANS PNP 45V 0.1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고2,267,148	100mA	45V	650mV @ 5mA, 100mA	15nA (ICBO)	110 @ 2mA, 5V	500mW	150MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BC546BBU	Fairchild/ON Semiconductor	TRANS NPN 65V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 500mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고5,024	100mA	65V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	500mW	300MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
JANTX2N4033UB	Microsemi Corporation	TRANS PNP 80V 1A Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 500mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: TO-205AA, TO-5-3 Metal Can	재고2,896	1A	80V	1V @ 100mA, 1A	10µA (ICBO)	100 @ 100mA, 5V	500mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-39 (TO-205AD)
CJD31C TR13	Central Semiconductor Corp	TRANS NPN 100V 3A DPAK Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Power - Max: 1.56W Frequency - Transition: 3MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고5,904	3A	100V	1.2V @ 375mA, 3A	50µA	10 @ 3A, 4V	1.56W	3MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK
DSM80100M-7	Diodes Incorporated	TRANS PNP 80V 0.5A SOT26 Transistor Type: PNP + Diode (Isolated) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Power - Max: 600mW Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	패키지: SOT-23-6	재고6,224	500mA	80V	250mV @ 10mA, 100mA	100nA (ICBO)	120 @ 10mA, 1V	600mW	-	-65°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
2SD2702TL	Rohm Semiconductor	TRANS NPN 12V 1.5A TUMT3 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V Power - Max: 800mW Frequency - Transition: 400MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: TUMT3	패키지: 3-SMD, Flat Leads	재고3,456	1.5A	12V	200mV @ 25mA, 500mA	100nA (ICBO)	270 @ 200mA, 2V	800mW	400MHz	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	TUMT3
2N6052	Central Semiconductor Corp	TRANS PNP 100V 12A TO-3 Transistor Type: PNP Current - Collector (Ic) (Max): 12A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V Power - Max: 150W Frequency - Transition: 4MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	패키지: TO-204AA, TO-3	재고9,576	12A	100V	3V @ 120mA, 12A	1mA	750 @ 6A, 3V	150W	4MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
CXTA14 TR	Central Semiconductor Corp	TRANS NPN DARL 30V 0.5A SOT89 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Power - Max: 1.2W Frequency - Transition: 125MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고77,814	500mA	30V	1.5V @ 100µA, 100mA	100nA (ICBO)	20000 @ 100mA, 5V	1.2W	125MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
CEN-U57	Central Semiconductor Corp	TRANS PNP 100V 2A TO-202 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 1V Power - Max: 1.75W Frequency - Transition: 50MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-202 Long Tab Supplier Device Package: TO-202	패키지: TO-202 Long Tab	재고14,910	2A	100V	350mV @ 25mA, 250mA	100nA (ICBO)	20 @ 500mA, 1V	1.75W	50MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-202 Long Tab	TO-202
BC850C,215	Nexperia USA Inc.	TRANS NPN 45V 0.1A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고59,784	100mA	45V	600mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	250mW	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
CXT5551-TR-PBFREE	Central Semiconductor Corp	TRANS NPN 160V 0.6A SOT89 Transistor Type: NPN Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Power - Max: 1.2 W Frequency - Transition: 300MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	재고23,004	600 mA	160 V	200mV @ 5mA, 50mA	50nA (ICBO)	80 @ 10mA, 5V	1.2 W	300MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
2SC3914-TB-E	onsemi	NPN SILICON TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Power - Max: 200 mW Frequency - Transition: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	패키지: -	Request a Quote	500 mA	50 V	-	-	50 @ 10mA, 5V	200 mW	-	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP
2N5878-PBFREE	Central Semiconductor Corp	TRANS NPN 80V 10A TO3 Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 3V @ 2.5A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Power - Max: 150 W Frequency - Transition: 4MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	패키지: -	Request a Quote	10 A	80 V	3V @ 2.5A, 10A	1mA	20 @ 4A, 4V	150 W	4MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
BC807-40H-QR	Nexperia USA Inc.	BC807-40H-Q/SOT23/TO-236AB Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 320 mW Frequency - Transition: 80MHz Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	패키지: -	Request a Quote	500 mA	45 V	700mV @ 50mA, 500mA	100nA (ICBO)	250 @ 100mA, 1V	320 mW	80MHz	175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB
NJVMD45H11T4G	onsemi	TRANS PNP 80V 8A DPAK Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BC807-40W-QX	Nexperia USA Inc.	TRANS PNP 45V 0.5A SOT323 Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 200 mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: -	Request a Quote	500 mA	45 V	700mV @ 50mA, 500mA	100nA (ICBO)	250 @ 100mA, 1V	200 mW	80MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
2N5152L	Microchip Technology	NPN SILICON TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	2 A	80 V	1.5V @ 500mA, 5A	50µA	30 @ 2.5A, 5V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2N5075	Microchip Technology	POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 200 V Vce Saturation (Max) @ Ib, Ic: 2V @ 300µA, 500µA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 40 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Stud Mount Package / Case: TO-210AA, TO-59-4, Stud Supplier Device Package: TO-59	패키지: -	Request a Quote	3 A	200 V	2V @ 300µA, 500µA	-	-	40 W	-	-65°C ~ 200°C (TJ)	Stud Mount	TO-210AA, TO-59-4, Stud	TO-59
2N6727	NTE Electronics, Inc	TRANS PNP 40V 2A TO237 Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V Power - Max: 1 W Frequency - Transition: 500MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-237AA Supplier Device Package: TO-237	패키지: -	Request a Quote	2 A	40 V	500mV @ 100mA, 1A	-	50 @ 1A, 1V	1 W	500MHz	-	Through Hole	TO-237AA	TO-237
2SA733-P-BP	Micro Commercial Co	TRANS PNP 50V 0.1A TO92 Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Power - Max: 250 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	Request a Quote	100 mA	50 V	300mV @ 10mA, 100mA	100nA (ICBO)	200 @ 1mA, 6V	250 mW	100MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92

BDP953E6327HTSA1

Infineon Technologies

TRANS NPN 100V 3A SOT-223

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Power - Max: 5W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

패키지: TO-261-4, TO-261AA

재고6,320

3A

100V

500mV @ 200mA, 2A

100nA (ICBO)

100 @ 500mA, 1V

5W

100MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

PG-SOT223-4

JANS2N6193

Microsemi Corporation

TRANS PNP 100V 5A TO-39

Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: TO-205AD, TO-39-3 Metal Can

재고3,440

5A

100V

1.2V @ 500mA, 5A

100µA

60 @ 2A, 2V

1W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

BD743C-S

Bourns Inc.

TRANS NPN 100V 15A

Transistor Type: NPN
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 5A, 15A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고5,808

15A

100V

3V @ 5A, 15A

100µA

20 @ 5A, 4V

2W

-

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

2STL2580

STMicroelectronics

TRANS NPN 400V 1A TO-92MOD

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 5V
Power - Max: 1.5W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

패키지: TO-226-3, TO-92-3 Long Body

재고2,720

1A

400V

1V @ 200mA, 1A

10µA (ICBO)

60 @ 250mA, 5V

1.5W

-

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

2SB1679G0L

Panasonic Electronic Components

TRANS PNP 10V 0.5A SMINI-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 10V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 8mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 2V
Power - Max: 150mW
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2

패키지: SC-85

재고4,944

500mA

10V

300mV @ 8mA, 400mA

100nA (ICBO)

130 @ 500mA, 2V

150mW

130MHz

150°C (TJ)

Surface Mount

SC-85

SMini3-F2

PN4250_D75Z

Fairchild/ON Semiconductor

TRANS PNP 40V 0.5A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,984

500mA

40V

250mV @ 500µA, 10mA

10nA (ICBO)

250 @ 100µA, 5V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC212_D27Z

Fairchild/ON Semiconductor

TRANS PNP 50V 0.3A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V
Power - Max: 625mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,072

300mA

50V

600mV @ 5mA, 100mA

15nA (ICBO)

60 @ 2mA, 5V

625mW

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC327TA

Fairchild/ON Semiconductor

TRANS PNP 45V 0.8A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고6,688

800mA

45V

700mV @ 50mA, 500mA

100nA

100 @ 100mA, 1V

625mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC557

Fairchild/ON Semiconductor

TRANS PNP 45V 0.1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고2,267,148

100mA

45V

650mV @ 5mA, 100mA

15nA (ICBO)

110 @ 2mA, 5V

500mW

150MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BC546BBU

Fairchild/ON Semiconductor

TRANS NPN 65V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고5,024

100mA

65V

600mV @ 5mA, 100mA

15nA (ICBO)

200 @ 2mA, 5V

500mW

300MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

JANTX2N4033UB

Microsemi Corporation

TRANS PNP 80V 1A

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 500mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: TO-205AA, TO-5-3 Metal Can

재고2,896

1A

80V

1V @ 100mA, 1A

10µA (ICBO)

100 @ 100mA, 5V

500mW

-

-55°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-39 (TO-205AD)

CJD31C TR13

Central Semiconductor Corp

TRANS NPN 100V 3A DPAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Power - Max: 1.56W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고5,904

3A

100V

1.2V @ 375mA, 3A

50µA

10 @ 3A, 4V

1.56W

3MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

DSM80100M-7

Diodes Incorporated

TRANS PNP 80V 0.5A SOT26

Transistor Type: PNP + Diode (Isolated)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Power - Max: 600mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

패키지: SOT-23-6

재고6,224

500mA

80V

250mV @ 10mA, 100mA

100nA (ICBO)

120 @ 10mA, 1V

600mW

-

-65°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-26

2SD2702TL

Rohm Semiconductor

TRANS NPN 12V 1.5A TUMT3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Power - Max: 800mW
Frequency - Transition: 400MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: TUMT3

패키지: 3-SMD, Flat Leads

재고3,456

1.5A

12V

200mV @ 25mA, 500mA

100nA (ICBO)

270 @ 200mA, 2V

800mW

400MHz

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

TUMT3

2N6052

Central Semiconductor Corp

TRANS PNP 100V 12A TO-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
Power - Max: 150W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

패키지: TO-204AA, TO-3

재고9,576

12A

100V

3V @ 120mA, 12A

1mA

750 @ 6A, 3V

150W

4MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

CXTA14 TR

Central Semiconductor Corp

TRANS NPN DARL 30V 0.5A SOT89

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 1.2W
Frequency - Transition: 125MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: TO-243AA

재고77,814

500mA

30V

1.5V @ 100µA, 100mA

100nA (ICBO)

20000 @ 100mA, 5V

1.2W

125MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

CEN-U57

Central Semiconductor Corp

TRANS PNP 100V 2A TO-202

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 1V
Power - Max: 1.75W
Frequency - Transition: 50MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-202 Long Tab
Supplier Device Package: TO-202

패키지: TO-202 Long Tab

재고14,910

2A

100V

350mV @ 25mA, 250mA

100nA (ICBO)

20 @ 500mA, 1V

1.75W

50MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-202 Long Tab

TO-202

BC850C,215

Nexperia USA Inc.

TRANS NPN 45V 0.1A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고59,784

100mA

45V

600mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

250mW

100MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

CXT5551-TR-PBFREE

Central Semiconductor Corp

TRANS NPN 160V 0.6A SOT89

Transistor Type: NPN
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 1.2 W
Frequency - Transition: 300MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

재고23,004

600 mA

160 V

200mV @ 5mA, 50mA

50nA (ICBO)

80 @ 10mA, 5V

1.2 W

300MHz

-65°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

2SC3914-TB-E

onsemi

NPN SILICON TRANSISTOR

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Power - Max: 200 mW
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP

패키지: -

Request a Quote

500 mA

50 V

-

50 @ 10mA, 5V

200 mW

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CP

2N5878-PBFREE

Central Semiconductor Corp

TRANS NPN 80V 10A TO3

Transistor Type: NPN
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 2.5A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Power - Max: 150 W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

패키지: -

Request a Quote

10 A

80 V

3V @ 2.5A, 10A

1mA

20 @ 4A, 4V

150 W

4MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

BC807-40H-QR

Nexperia USA Inc.

BC807-40H-Q/SOT23/TO-236AB

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 320 mW
Frequency - Transition: 80MHz
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB

패키지: -

Request a Quote

500 mA

45 V

700mV @ 50mA, 500mA

100nA (ICBO)

250 @ 100mA, 1V

320 mW

80MHz

175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB

NJVMD45H11T4G

onsemi

TRANS PNP 80V 8A DPAK

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

BC807-40W-QX

Nexperia USA Inc.

TRANS PNP 45V 0.5A SOT323

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Power - Max: 200 mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: -

Request a Quote

500 mA

45 V

700mV @ 50mA, 500mA

100nA (ICBO)

250 @ 100mA, 1V

200 mW

80MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

2N5152L

Microchip Technology

NPN SILICON TRANSISTOR

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

Request a Quote

2 A

80 V

1.5V @ 500mA, 5A

50µA

30 @ 2.5A, 5V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

2N5075

Microchip Technology

POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Vce Saturation (Max) @ Ib, Ic: 2V @ 300µA, 500µA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 40 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: TO-210AA, TO-59-4, Stud
Supplier Device Package: TO-59

패키지: -

Request a Quote

3 A

200 V

2V @ 300µA, 500µA

-

40 W

-

-65°C ~ 200°C (TJ)

Stud Mount

TO-210AA, TO-59-4, Stud

TO-59

2N6727

NTE Electronics, Inc

TRANS PNP 40V 2A TO237

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Power - Max: 1 W
Frequency - Transition: 500MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-237AA
Supplier Device Package: TO-237

패키지: -

Request a Quote

2 A

40 V

500mV @ 100mA, 1A

-

50 @ 1A, 1V

1 W

500MHz

-

Through Hole

TO-237AA

TO-237

2SA733-P-BP

Micro Commercial Co

TRANS PNP 50V 0.1A TO92

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Power - Max: 250 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

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100 mA

50 V

300mV @ 10mA, 100mA

100nA (ICBO)

200 @ 1mA, 6V

250 mW

100MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92