페이지 702 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SA1721RTE85LF	Toshiba Semiconductor and Storage	TRANS PNP 300V 100MA TO236-3 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V Power - Max: 150mW Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	패키지: TO-236-3, SC-59, SOT-23-3	재고4,464	100mA	300V	500mV @ 2mA, 20mA	100nA (ICBO)	30 @ 20mA, 10V	150mW	50MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
2SA1162S-GR,LF(D	Toshiba Semiconductor and Storage	TRANSISTOR PNP 50V 150MA S-MINI Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	패키지: TO-236-3, SC-59, SOT-23-3	재고36,000	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	70 @ 2mA, 6V	150mW	80MHz	125°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
FZT600BTC	Diodes Incorporated	TRANS NPN DARL 140V 2A SOT223 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 10mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 500mA, 10V Power - Max: 2W Frequency - Transition: 250MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고3,344	2A	140V	1.2V @ 10mA, 1A	10µA	10000 @ 500mA, 10V	2W	250MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
2SD22250RA	Panasonic Electronic Components	TRANS NPN 120V 0.5A MT-2 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 150mA, 10V Power - Max: 1W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: MT-2-A1	패키지: 3-SIP	재고5,376	500mA	120V	1V @ 30mA, 300mA	-	130 @ 150mA, 10V	1W	200MHz	150°C (TJ)	Through Hole	3-SIP	MT-2-A1
TIP112 TIN/LEAD	Central Semiconductor Corp	TRANS NPN 100V TO220 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V Power - Max: - Frequency - Transition: 25MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고6,320	-	100V	2.5V @ 8mA, 2A	-	1000 @ 1A, 4V	-	25MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
ZTX694BSTZ	Diodes Incorporated	TRANS NPN 120V 0.5A E-LINE Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 200mA, 2V Power - Max: 1W Frequency - Transition: 130MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3, Formed Leads	재고6,384	500mA	120V	500mV @ 5mA, 400mA	100nA (ICBO)	400 @ 200mA, 2V	1W	130MHz	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
NSS35200CF8T1G	ON Semiconductor	TRANS PNP 35V 2A 8CHIPFET Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 35V Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V Power - Max: 635mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	패키지: 8-SMD, Flat Lead	재고1,295,508	2A	35V	300mV @ 20mA, 2A	100nA	100 @ 1.5A, 2V	635mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
NSV2029M3T5G	ON Semiconductor	TRANS PNP 50V 0.15A SOT723 Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500pA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 265mW Frequency - Transition: 140MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SOT-723	패키지: SOT-723	재고6,960	150mA	50V	500mV @ 5mA, 50mA	500pA (ICBO)	120 @ 1mA, 6V	265mW	140MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-723	SOT-723
TIP126TU	Fairchild/ON Semiconductor	TRANS PNP DARL 80V 5A TO-220 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고9,348	5A	80V	4V @ 20mA, 5A	2mA	1000 @ 3A, 3V	2W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
BCP52-10,135	Nexperia USA Inc.	TRANS PNP 60V 1A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 1.3W Frequency - Transition: 145MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고5,488	1A	60V	500mV @ 50mA, 500mA	100nA (ICBO)	63 @ 150mA, 2V	1.3W	145MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
NZT753	Fairchild/ON Semiconductor	TRANS PNP 100V 4A SOT-223 Transistor Type: PNP Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Power - Max: 1.2W Frequency - Transition: 75MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223-4	패키지: TO-261-4, TO-261AA	재고553,968	4A	100V	300mV @ 50mA, 1A	100nA (ICBO)	100 @ 500mA, 2V	1.2W	75MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223-4
MJD44H11TF	Fairchild/ON Semiconductor	TRANS NPN 80V 8A DPAK Transistor Type: NPN Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Power - Max: 1.75W Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-3	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고28,320	8A	80V	1V @ 400mA, 8A	10µA	40 @ 4A, 1V	1.75W	50MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-3
FMMT717TA	Diodes Incorporated	TRANS PNP 12V 2.5A SOT23-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2.5A Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 2.5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Power - Max: 625mW Frequency - Transition: 110MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고798,108	2.5A	12V	220mV @ 50mA, 2.5A	100nA	300 @ 100mA, 2V	625mW	110MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2SC4382	Sanken	TRANS NPN 200V 2A TO220F Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 200V Vce Saturation (Max) @ Ib, Ic: 1V @ 70mA, 700mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 700mA, 10V Power - Max: 25W Frequency - Transition: 15MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	패키지: TO-220-3 Full Pack	재고45,072	2A	200V	1V @ 70mA, 700mA	10µA (ICBO)	60 @ 700mA, 10V	25W	15MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
BF820-QVL	Nexperia USA Inc.	BF820-Q/SOT23/TO-236AB Transistor Type: NPN Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V Power - Max: 250 mW Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	패키지: -	Request a Quote	50 mA	300 V	600mV @ 5mA, 30mA	10nA (ICBO)	50 @ 25mA, 20V	250 mW	60MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB
2SB1151-O-BP	Micro Commercial Co	TRANS PNP 60V 5A TO126 Transistor Type: PNP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Power - Max: 1.25 W Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	패키지: -	Request a Quote	5 A	60 V	300mV @ 200mA, 2A	10µA (ICBO)	100 @ 2A, 1V	1.25 W	-	-55°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
CEN867-TR-TIN-LEAD	Central Semiconductor Corp	TRANSISTOR NPN Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC4942-T1-AZ	Renesas Electronics Corporation	TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
STL128DN	STMicroelectronics	TRANS NPN 400V 4A TO220 Transistor Type: NPN Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 400 V Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 2A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Power - Max: 60 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: -	Request a Quote	4 A	400 V	1V @ 400mA, 2A	250µA	10 @ 10mA, 5V	60 W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220
D44VM10	Harris Corporation	TRANS NPN 80V 8A TO220AB Transistor Type: NPN Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 6A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Power - Max: 50 W Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: -	Request a Quote	8 A	80 V	600mV @ 300mA, 6A	10µA	40 @ 4A, 1V	50 W	50MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
PMD10K80	Solid State Inc.	TRANS NPN DARL 80V 12A TO3 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	패키지: -	Request a Quote	12 A	80 V	-	-	-	-	-	-	Through Hole	TO-204AA, TO-3	TO-3
BC847CQCZ	Nexperia USA Inc.	TRANS 45V 0.1A DFN1412D-3 Transistor Type: - Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 360 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1412D-3	패키지: -	Request a Quote	100 mA	45 V	400mV @ 5mA, 100mA	15nA (ICBO)	420 @ 2mA, 5V	360 mW	100MHz	150°C (TJ)	Surface Mount, Wettable Flank	3-XDFN Exposed Pad	DFN1412D-3
2N2727	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 1 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	500 mA	150 V	-	-	-	1 W	-	-	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
2SA2071P5T100	Rohm Semiconductor	PNP HIGH SPEED SWITCHING TRANSIS Transistor Type: PNP Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	패키지: -	Request a Quote	3 A	60 V	500mV @ 1mA, 10mA	1µA (ICBO)	180 @ 2mA, 6V	500 mW	-	150°C (TJ)	Surface Mount	TO-243AA	MPT3
2N5621	Microchip Technology	POWER BJT Transistor Type: PNP Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 116 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AD (TO-3)	패키지: -	Request a Quote	10 A	60 V	-	-	-	116 W	-	-	Through Hole	TO-204AA, TO-3	TO-204AD (TO-3)
2SC2983-Y-TP	Micro Commercial Co	TRANS NPN 160V 1.5A DPAK Transistor Type: NPN Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 160 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 5V Power - Max: 1 W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	패키지: -	Request a Quote	1.5 A	160 V	1.5V @ 50mA, 500mA	1µA (ICBO)	70 @ 100mA, 5V	1 W	100MHz	150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK
2C6338	Microchip Technology	TRANSISTOR POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANTX2N2604UB-TR	Microchip Technology	TRANS PNP 60V 0.03A UB Transistor Type: PNP Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500µA, 5V Power - Max: 400 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	30 mA	60 V	300mV @ 500µA, 10mA	10nA	60 @ 500µA, 5V	400 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	4-SMD, No Lead	UB

2SA1721RTE85LF

Toshiba Semiconductor and Storage

TRANS PNP 300V 100MA TO236-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Power - Max: 150mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

패키지: TO-236-3, SC-59, SOT-23-3

재고4,464

100mA

300V

500mV @ 2mA, 20mA

100nA (ICBO)

30 @ 20mA, 10V

150mW

50MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

2SA1162S-GR,LF(D

Toshiba Semiconductor and Storage

TRANSISTOR PNP 50V 150MA S-MINI

Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

패키지: TO-236-3, SC-59, SOT-23-3

재고36,000

150mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

70 @ 2mA, 6V

150mW

80MHz

125°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

FZT600BTC

Diodes Incorporated

TRANS NPN DARL 140V 2A SOT223

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 10mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 500mA, 10V
Power - Max: 2W
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고3,344

2A

140V

1.2V @ 10mA, 1A

10µA

10000 @ 500mA, 10V

2W

250MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

2SD22250RA

Panasonic Electronic Components

TRANS NPN 120V 0.5A MT-2

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: MT-2-A1

패키지: 3-SIP

재고5,376

500mA

120V

1V @ 30mA, 300mA

-

130 @ 150mA, 10V

1W

200MHz

150°C (TJ)

Through Hole

3-SIP

MT-2-A1

TIP112 TIN/LEAD

Central Semiconductor Corp

TRANS NPN 100V TO220

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Power - Max: -
Frequency - Transition: 25MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고6,320

-

100V

2.5V @ 8mA, 2A

-

1000 @ 1A, 4V

-

25MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

ZTX694BSTZ

Diodes Incorporated

TRANS NPN 120V 0.5A E-LINE

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 200mA, 2V
Power - Max: 1W
Frequency - Transition: 130MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3, Formed Leads

재고6,384

500mA

120V

500mV @ 5mA, 400mA

100nA (ICBO)

400 @ 200mA, 2V

1W

130MHz

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

NSS35200CF8T1G

ON Semiconductor

TRANS PNP 35V 2A 8CHIPFET

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 35V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V
Power - Max: 635mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

패키지: 8-SMD, Flat Lead

재고1,295,508

2A

35V

300mV @ 20mA, 2A

100nA

100 @ 1.5A, 2V

635mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

NSV2029M3T5G

ON Semiconductor

TRANS PNP 50V 0.15A SOT723

Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500pA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 265mW
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SOT-723

패키지: SOT-723

재고6,960

150mA

50V

500mV @ 5mA, 50mA

500pA (ICBO)

120 @ 1mA, 6V

265mW

140MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-723

TIP126TU

Fairchild/ON Semiconductor

TRANS PNP DARL 80V 5A TO-220

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고9,348

5A

80V

4V @ 20mA, 5A

2mA

1000 @ 3A, 3V

2W

-

150°C (TJ)

Through Hole

TO-220-3

BCP52-10,135

Nexperia USA Inc.

TRANS PNP 60V 1A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 1.3W
Frequency - Transition: 145MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고5,488

1A

60V

500mV @ 50mA, 500mA

100nA (ICBO)

63 @ 150mA, 2V

1.3W

145MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

NZT753

Fairchild/ON Semiconductor

TRANS PNP 100V 4A SOT-223

Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Power - Max: 1.2W
Frequency - Transition: 75MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-4

패키지: TO-261-4, TO-261AA

재고553,968

4A

100V

300mV @ 50mA, 1A

100nA (ICBO)

100 @ 500mA, 2V

1.2W

75MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223-4

MJD44H11TF

Fairchild/ON Semiconductor

TRANS NPN 80V 8A DPAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Power - Max: 1.75W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고28,320

8A

80V

1V @ 400mA, 8A

10µA

40 @ 4A, 1V

1.75W

50MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252-3

FMMT717TA

Diodes Incorporated

TRANS PNP 12V 2.5A SOT23-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2.5A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 2.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Power - Max: 625mW
Frequency - Transition: 110MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고798,108

2.5A

12V

220mV @ 50mA, 2.5A

100nA

300 @ 100mA, 2V

625mW

110MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2SC4382

Sanken

TRANS NPN 200V 2A TO220F

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 200V
Vce Saturation (Max) @ Ib, Ic: 1V @ 70mA, 700mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 700mA, 10V
Power - Max: 25W
Frequency - Transition: 15MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F

패키지: TO-220-3 Full Pack

재고45,072

2A

200V

1V @ 70mA, 700mA

10µA (ICBO)

60 @ 700mA, 10V

25W

15MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F

BF820-QVL

Nexperia USA Inc.

BF820-Q/SOT23/TO-236AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Power - Max: 250 mW
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB

패키지: -

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50 mA

300 V

600mV @ 5mA, 30mA

10nA (ICBO)

50 @ 25mA, 20V

250 mW

60MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB

2SB1151-O-BP

Micro Commercial Co

TRANS PNP 60V 5A TO126

Transistor Type: PNP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Power - Max: 1.25 W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

패키지: -

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5 A

60 V

300mV @ 200mA, 2A

10µA (ICBO)

100 @ 2A, 1V

1.25 W

-

-55°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

CEN867-TR-TIN-LEAD

Central Semiconductor Corp

TRANSISTOR NPN

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

2SC4942-T1-AZ

Renesas Electronics Corporation

TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

STL128DN

STMicroelectronics

TRANS NPN 400V 4A TO220

Transistor Type: NPN
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 2A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
Power - Max: 60 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: -

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4 A

400 V

1V @ 400mA, 2A

250µA

10 @ 10mA, 5V

60 W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220

D44VM10

Harris Corporation

TRANS NPN 80V 8A TO220AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 6A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Power - Max: 50 W
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: -

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8 A

80 V

600mV @ 300mA, 6A

10µA

40 @ 4A, 1V

50 W

50MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

PMD10K80

Solid State Inc.

TRANS NPN DARL 80V 12A TO3

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

패키지: -

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12 A

80 V

-

Through Hole

TO-204AA, TO-3

TO-3

BC847CQCZ

Nexperia USA Inc.

TRANS 45V 0.1A DFN1412D-3

Transistor Type: -
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 360 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1412D-3

패키지: -

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100 mA

45 V

400mV @ 5mA, 100mA

15nA (ICBO)

420 @ 2mA, 5V

360 mW

100MHz

150°C (TJ)

Surface Mount, Wettable Flank

3-XDFN Exposed Pad

DFN1412D-3

2N2727

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

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500 mA

150 V

-

1 W

-

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

2SA2071P5T100

Rohm Semiconductor

PNP HIGH SPEED SWITCHING TRANSIS

Transistor Type: PNP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Power - Max: 500 mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3

패키지: -

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3 A

60 V

500mV @ 1mA, 10mA

1µA (ICBO)

180 @ 2mA, 6V

500 mW

-

150°C (TJ)

Surface Mount

TO-243AA

MPT3

2N5621

Microchip Technology

POWER BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 116 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AD (TO-3)

패키지: -

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10 A

60 V

-

116 W

-

Through Hole

TO-204AA, TO-3

TO-204AD (TO-3)

2SC2983-Y-TP

Micro Commercial Co

TRANS NPN 160V 1.5A DPAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 5V
Power - Max: 1 W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK

패키지: -

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1.5 A

160 V

1.5V @ 50mA, 500mA

1µA (ICBO)

70 @ 100mA, 5V

1 W

100MHz

150°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

2C6338

Microchip Technology

TRANSISTOR POWER BJT

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

JANTX2N2604UB-TR

Microchip Technology

TRANS PNP 60V 0.03A UB

Transistor Type: PNP
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500µA, 5V
Power - Max: 400 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB

패키지: -

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30 mA

60 V

300mV @ 500µA, 10mA

10nA

60 @ 500µA, 5V

400 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

4-SMD, No Lead

UB