페이지 716 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BCP 51-16 H6778	Infineon Technologies	TRANS PNP 45V 1A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 2W Frequency - Transition: 125MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	패키지: TO-261-4, TO-261AA	재고3,248	1A	45V	500mV @ 50mA, 500mA	100nA (ICBO)	100 @ 150mA, 2V	2W	125MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4
TEC301-303	Central Semiconductor Corp	TRANSISTOR TO-106 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,632	-	-	-	-	-	-	-	-	-	-	-
2N5191	Central Semiconductor Corp	TRANS NPN 60V 4A TO126 Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V Power - Max: 40W Frequency - Transition: 2MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	패키지: TO-225AA, TO-126-3	재고7,680	4A	60V	1.4V @ 1A, 4A	1mA	25 @ 1.5A, 2V	40W	2MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
JANTXV2N5154L	Microsemi Corporation	TRANS NPN 80V 2A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	패키지: TO-205AA, TO-5-3 Metal Can	재고3,120	2A	80V	1.5V @ 500mA, 5A	50µA	70 @ 2.5A, 5V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
JAN2N3251A	Microsemi Corporation	TRANS PNP 60V 0.2A TO-39 Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 360mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: TO-205AD, TO-39-3 Metal Can	재고5,392	200mA	60V	500mV @ 5mA, 50mA	10µA (ICBO)	100 @ 10mA, 1V	360mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
2SC4731T-AY	ON Semiconductor	TRANS NPN 100V 4A FLP Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V Power - Max: 1.5W Frequency - Transition: 180MHz Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 No Tab Supplier Device Package: FLP	패키지: TO-220-3 No Tab	재고6,320	4A	100V	400mV @ 200mA, 2A	1µA (ICBO)	200 @ 500mA, 5V	1.5W	180MHz	-	Through Hole	TO-220-3 No Tab	FLP
MPSA18RLRM	ON Semiconductor	TRANS NPN 45V 0.2A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V Power - Max: 625mW Frequency - Transition: 160MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,472	200mA	45V	300mV @ 5mA, 50mA	50nA (ICBO)	500 @ 10mA, 5V	625mW	160MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2SB1326TV2Q	Rohm Semiconductor	TRANS PNP 20V 5A ATV Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SIP Supplier Device Package: ATV	패키지: 3-SIP	재고3,312	5A	20V	1V @ 100mA, 4A	500nA (ICBO)	120 @ 500mA, 2V	1W	120MHz	150°C (TJ)	Through Hole	3-SIP	ATV
KSD1021GTA	Fairchild/ON Semiconductor	TRANS NPN 30V 1A TO-92S Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Power - Max: 350mW Frequency - Transition: 130MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads) Supplier Device Package: TO-92S	패키지: TO-226-3, TO-92-3 Short Body (Formed Leads)	재고3,472	1A	30V	500mV @ 100mA, 1A	100nA (ICBO)	200 @ 100mA, 1V	350mW	130MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Short Body (Formed Leads)	TO-92S
BC328TF	Fairchild/ON Semiconductor	TRANS PNP 25V 0.8A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,216	800mA	25V	700mV @ 50mA, 500mA	100nA	100 @ 100mA, 1V	625mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC328	Fairchild/ON Semiconductor	TRANS PNP 25V 0.8A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고5,632	800mA	25V	700mV @ 50mA, 500mA	100nA	100 @ 100mA, 1V	625mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BUL45G	ON Semiconductor	TRANS NPN 400V 5A TO220AB Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 400mV @ 400mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 300mA, 5V Power - Max: 75W Frequency - Transition: 12MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고5,424	5A	400V	400mV @ 400mA, 2A	100µA	14 @ 300mA, 5V	75W	12MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
BC857B	STMicroelectronics	TRANS PNP 45V 0.1A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고30,831,264	100mA	45V	650mV @ 5mA, 100mA	15nA (ICBO)	220 @ 2mA, 5V	250mW	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
JAN2N3507A	Microsemi Corporation	TRANS NPN 50V 3A TO39 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: TO-205AD, TO-39-3 Metal Can	재고3,232	3A	50V	1.5V @ 250mA, 2.5A	-	30 @ 1.5A, 2V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
JAN2N3735L	Microsemi Corporation	TRANS NPN 40V 1.5A TO5 Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Power - Max: 1W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	패키지: TO-205AA, TO-5-3 Metal Can	재고5,600	1.5A	40V	900mV @ 100mA, 1A	10µA (ICBO)	20 @ 1A, 1.5V	1W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5
BUT70W	STMicroelectronics	TRANS NPN 125V 32A TO-247 Transistor Type: NPN Current - Collector (Ic) (Max): 32A Voltage - Collector Emitter Breakdown (Max): 125V Vce Saturation (Max) @ Ib, Ic: 900mV @ 7A, 70A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 200W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고142,800	32A	125V	900mV @ 7A, 70A	-	-	200W	-	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
2SC4211-7-TL-E	ON Semiconductor	TRANS NPN 50V 0.15A SOT-323 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: MCP	패키지: SC-70, SOT-323	재고36,000	-	-	-	-	-	-	-	-	Surface Mount	SC-70, SOT-323	MCP
2SAR544RTL	Rohm Semiconductor	TRANS PNP 80V 2.5A TSMT3 Transistor Type: PNP Current - Collector (Ic) (Max): 2.5A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Power - Max: 1W Frequency - Transition: 280MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Supplier Device Package: TSMT3	패키지: SC-96	재고4,416	2.5A	80V	400mV @ 50mA, 1A	1µA (ICBO)	120 @ 100mA, 3V	1W	280MHz	150°C (TJ)	Surface Mount	SC-96	TSMT3
KSD2012GTU	Fairchild/ON Semiconductor	TRANS NPN 60V 3A TO-220F Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V Power - Max: 25W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	패키지: TO-220-3 Full Pack	재고65,820	3A	60V	1V @ 200mA, 2A	100µA (ICBO)	150 @ 500mA, 5V	25W	3MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F
2N3904RM	Fairchild Semiconductor	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: NPN Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 625 mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	패키지: -	Request a Quote	200 mA	40 V	300mV @ 5mA, 50mA	50nA	100 @ 10mA, 1V	625 mW	300MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92
JAN2N2946AUB-TR	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 35 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV Power - Max: 400 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	100 mA	35 V	-	10µA (ICBO)	50 @ 1mA, 500mV	400 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
BCX53-16-TP	Micro Commercial Co	TRANS PNP 80V 1A SOT89 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 500 mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	재고5,520	1 A	80 V	500mV @ 50mA, 500mA	100nA (ICBO)	100 @ 150mA, 2V	500 mW	50MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89
JAN2N2904AL	Microchip Technology	TRANS PNP 60V 600MA TO5AA Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V Power - Max: 600 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	패키지: -	Request a Quote	600 mA	60 V	1.6V @ 50mA, 500mA	1µA	40 @ 500mA, 10V	600 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
NTE62	NTE Electronics, Inc	TRANS NPN 900V 3A TO3 Transistor Type: NPN Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 900 V Vce Saturation (Max) @ Ib, Ic: 10V @ 500mA, 1.5A Current - Collector Cutoff (Max): 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 1.5A, 10V Power - Max: 50 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	패키지: -	Request a Quote	3 A	900 V	10V @ 500mA, 1.5A	10mA	3 @ 1.5A, 10V	50 W	-	150°C (TJ)	Through Hole	TO-204AA, TO-3	TO-3
2SARA41CHZGT116S	Rohm Semiconductor	TRANS PNP 120V 0.05A SOT323 Transistor Type: PNP Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Power - Max: 200 mW Frequency - Transition: 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: -	재고4,242	50 mA	120 V	500mV @ 1mA, 10mA	500nA (ICBO)	180 @ 2mA, 6V	200 mW	140MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
2N4930	Microchip Technology	TRANS PNP 200V 200MA TO39 Transistor Type: PNP Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 200 V Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3mA, 30mA Current - Collector Cutoff (Max): 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: -	Request a Quote	200 mA	200 V	1.2V @ 3mA, 30mA	250nA (ICBO)	50 @ 30mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
JANTXV2N6211	Microchip Technology	TRANS PNP 225V 0.005A TO66 Transistor Type: PNP Current - Collector (Ic) (Max): 5 mA Voltage - Collector Emitter Breakdown (Max): 225 V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 125mA, 1A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V Power - Max: 3 W Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TA) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	패키지: -	Request a Quote	5 mA	225 V	1.4V @ 125mA, 1A	5mA	30 @ 1A, 5V	3 W	-	-55°C ~ 200°C (TA)	Through Hole	TO-213AA, TO-66-2	TO-66 (TO-213AA)
2N3421-PBFREE	Central Semiconductor Corp	TRANS NPN 80V TO39 Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V Power - Max: - Frequency - Transition: 40MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: -	Request a Quote	-	80 V	-	500nA (ICBO)	40 @ 1A, 2V	-	40MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39

BCP 51-16 H6778

Infineon Technologies

TRANS PNP 45V 1A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 2W
Frequency - Transition: 125MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

패키지: TO-261-4, TO-261AA

재고3,248

1A

45V

500mV @ 50mA, 500mA

100nA (ICBO)

100 @ 150mA, 2V

2W

125MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

PG-SOT223-4

TEC301-303

Central Semiconductor Corp

TRANSISTOR TO-106

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,632

-

2N5191

Central Semiconductor Corp

TRANS NPN 60V 4A TO126

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
Power - Max: 40W
Frequency - Transition: 2MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

패키지: TO-225AA, TO-126-3

재고7,680

4A

60V

1.4V @ 1A, 4A

1mA

25 @ 1.5A, 2V

40W

2MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

JANTXV2N5154L

Microsemi Corporation

TRANS NPN 80V 2A TO5

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5

패키지: TO-205AA, TO-5-3 Metal Can

재고3,120

2A

80V

1.5V @ 500mA, 5A

50µA

70 @ 2.5A, 5V

1W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5

JAN2N3251A

Microsemi Corporation

TRANS PNP 60V 0.2A TO-39

Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 360mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: TO-205AD, TO-39-3 Metal Can

재고5,392

200mA

60V

500mV @ 5mA, 50mA

10µA (ICBO)

100 @ 10mA, 1V

360mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

2SC4731T-AY

ON Semiconductor

TRANS NPN 100V 4A FLP

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Power - Max: 1.5W
Frequency - Transition: 180MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-220-3 No Tab
Supplier Device Package: FLP

패키지: TO-220-3 No Tab

재고6,320

4A

100V

400mV @ 200mA, 2A

1µA (ICBO)

200 @ 500mA, 5V

1.5W

180MHz

-

Through Hole

TO-220-3 No Tab

FLP

MPSA18RLRM

ON Semiconductor

TRANS NPN 45V 0.2A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 160MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,472

200mA

45V

300mV @ 5mA, 50mA

50nA (ICBO)

500 @ 10mA, 5V

625mW

160MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2SB1326TV2Q

Rohm Semiconductor

TRANS PNP 20V 5A ATV

Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: ATV

패키지: 3-SIP

재고3,312

5A

20V

1V @ 100mA, 4A

500nA (ICBO)

120 @ 500mA, 2V

1W

120MHz

150°C (TJ)

Through Hole

3-SIP

ATV

KSD1021GTA

Fairchild/ON Semiconductor

TRANS NPN 30V 1A TO-92S

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Power - Max: 350mW
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Supplier Device Package: TO-92S

패키지: TO-226-3, TO-92-3 Short Body (Formed Leads)

재고3,472

1A

30V

500mV @ 100mA, 1A

100nA (ICBO)

200 @ 100mA, 1V

350mW

130MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Short Body (Formed Leads)

TO-92S

BC328TF

Fairchild/ON Semiconductor

TRANS PNP 25V 0.8A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,216

800mA

25V

700mV @ 50mA, 500mA

100nA

100 @ 100mA, 1V

625mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BC328

Fairchild/ON Semiconductor

TRANS PNP 25V 0.8A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고5,632

800mA

25V

700mV @ 50mA, 500mA

100nA

100 @ 100mA, 1V

625mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BUL45G

ON Semiconductor

TRANS NPN 400V 5A TO220AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 400mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 300mA, 5V
Power - Max: 75W
Frequency - Transition: 12MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고5,424

5A

400V

400mV @ 400mA, 2A

100µA

14 @ 300mA, 5V

75W

12MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

BC857B

STMicroelectronics

TRANS PNP 45V 0.1A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고30,831,264

100mA

45V

650mV @ 5mA, 100mA

15nA (ICBO)

220 @ 2mA, 5V

250mW

100MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

JAN2N3507A

Microsemi Corporation

TRANS NPN 50V 3A TO39

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: TO-205AD, TO-39-3 Metal Can

재고3,232

3A

50V

1.5V @ 250mA, 2.5A

-

30 @ 1.5A, 2V

1W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

JAN2N3735L

Microsemi Corporation

TRANS NPN 40V 1.5A TO5

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5

패키지: TO-205AA, TO-5-3 Metal Can

재고5,600

1.5A

40V

900mV @ 100mA, 1A

10µA (ICBO)

20 @ 1A, 1.5V

1W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5

BUT70W

STMicroelectronics

TRANS NPN 125V 32A TO-247

Transistor Type: NPN
Current - Collector (Ic) (Max): 32A
Voltage - Collector Emitter Breakdown (Max): 125V
Vce Saturation (Max) @ Ib, Ic: 900mV @ 7A, 70A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 200W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고142,800

32A

125V

900mV @ 7A, 70A

-

200W

-

150°C (TJ)

Through Hole

TO-247-3

2SC4211-7-TL-E

ON Semiconductor

TRANS NPN 50V 0.15A SOT-323

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: MCP

패키지: SC-70, SOT-323

재고36,000

-

Surface Mount

SC-70, SOT-323

MCP

2SAR544RTL

Rohm Semiconductor

TRANS PNP 80V 2.5A TSMT3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2.5A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Power - Max: 1W
Frequency - Transition: 280MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Supplier Device Package: TSMT3

패키지: SC-96

재고4,416

2.5A

80V

400mV @ 50mA, 1A

1µA (ICBO)

120 @ 100mA, 3V

1W

280MHz

150°C (TJ)

Surface Mount

SC-96

TSMT3

KSD2012GTU

Fairchild/ON Semiconductor

TRANS NPN 60V 3A TO-220F

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
Power - Max: 25W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F

패키지: TO-220-3 Full Pack

재고65,820

3A

60V

1V @ 200mA, 2A

100µA (ICBO)

150 @ 500mA, 5V

25W

3MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F

2N3904RM

Fairchild Semiconductor

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: NPN
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 625 mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

패키지: -

Request a Quote

200 mA

40 V

300mV @ 5mA, 50mA

50nA

100 @ 10mA, 1V

625 mW

300MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92

JAN2N2946AUB-TR

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 35 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV
Power - Max: 400 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

100 mA

35 V

-

10µA (ICBO)

50 @ 1mA, 500mV

400 mW

-

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

BCX53-16-TP

Micro Commercial Co

TRANS PNP 80V 1A SOT89

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 500 mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

재고5,520

1 A

80 V

500mV @ 50mA, 500mA

100nA (ICBO)

100 @ 150mA, 2V

500 mW

50MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89

JAN2N2904AL

Microchip Technology

TRANS PNP 60V 600MA TO5AA

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
Power - Max: 600 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5AA

패키지: -

Request a Quote

600 mA

60 V

1.6V @ 50mA, 500mA

1µA

40 @ 500mA, 10V

600 mW

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AA, TO-5-3 Metal Can

TO-5AA

NTE62

NTE Electronics, Inc

TRANS NPN 900V 3A TO3

Transistor Type: NPN
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Vce Saturation (Max) @ Ib, Ic: 10V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 1.5A, 10V
Power - Max: 50 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

패키지: -

Request a Quote

3 A

900 V

10V @ 500mA, 1.5A

10mA

3 @ 1.5A, 10V

50 W

-

150°C (TJ)

Through Hole

TO-204AA, TO-3

TO-3

2SARA41CHZGT116S

Rohm Semiconductor

TRANS PNP 120V 0.05A SOT323

Transistor Type: PNP
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Power - Max: 200 mW
Frequency - Transition: 140MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: -

재고4,242

50 mA

120 V

500mV @ 1mA, 10mA

500nA (ICBO)

180 @ 2mA, 6V

200 mW

140MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

2N4930

Microchip Technology

TRANS PNP 200V 200MA TO39

Transistor Type: PNP
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3mA, 30mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: -

Request a Quote

200 mA

200 V

1.2V @ 3mA, 30mA

250nA (ICBO)

50 @ 30mA, 10V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

JANTXV2N6211

Microchip Technology

TRANS PNP 225V 0.005A TO66

Transistor Type: PNP
Current - Collector (Ic) (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 225 V
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V
Power - Max: 3 W
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TA)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)

패키지: -

Request a Quote

5 mA

225 V

1.4V @ 125mA, 1A

5mA

30 @ 1A, 5V

3 W

-

-55°C ~ 200°C (TA)

Through Hole

TO-213AA, TO-66-2

TO-66 (TO-213AA)

2N3421-PBFREE

Central Semiconductor Corp

TRANS NPN 80V TO39

Transistor Type: NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Power - Max: -
Frequency - Transition: 40MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: -

Request a Quote

-

80 V

-

500nA (ICBO)

40 @ 1A, 2V

-

40MHz

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39