페이지 722 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SA1020-O(F,M)	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	패키지: TO-226-3, TO-92-3 Long Body	재고7,392	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
BC847CW/ZLF	Nexperia USA Inc.	TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3	패키지: SC-70, SOT-323	재고3,376	-	-	-	-	-	-	-	-	Surface Mount	SC-70, SOT-323	SC-70-3
FJP5554	Fairchild/ON Semiconductor	TRANS NPN 400V 4A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3.5A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 800mA, 3V Power - Max: 70W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고2,000	4A	400V	1.5V @ 1A, 3.5A	250µA	20 @ 800mA, 3V	70W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
MPSA43ZL1G	ON Semiconductor	TRANS NPN 200V 0.5A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 200V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V Power - Max: 625mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,344	500mA	200V	500mV @ 2mA, 20mA	100nA (ICBO)	25 @ 1mA, 10V	625mW	50MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
ZX5T849ZTA	Diodes Incorporated	TRANS NPN 30V 6A SOT-89 Transistor Type: NPN Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 190mV @ 300mA, 6.5A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2.1W Frequency - Transition: 140MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고7,792	6A	30V	190mV @ 300mA, 6.5A	20nA (ICBO)	100 @ 1A, 1V	2.1W	140MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
PBSS9110S,126	NXP	TRANS PNP 100V 1A TO92 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V Power - Max: 830mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고2,816	1A	100V	320mV @ 100mA, 1A	100nA	150 @ 500mA, 5V	830mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSD288YTU	Fairchild/ON Semiconductor	TRANS NPN 55V 3A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 55V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V Power - Max: 25W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고7,680	3A	55V	1V @ 100mA, 1A	50µA (ICBO)	120 @ 500mA, 5V	25W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
KST4124MTF	Fairchild/ON Semiconductor	TRANS NPN 25V 0.2A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V Power - Max: 350mW Frequency - Transition: 300MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고36,000	200mA	25V	300mV @ 5mA, 50mA	50nA (ICBO)	120 @ 2mA, 1V	350mW	300MHz	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BC636BU	Fairchild/ON Semiconductor	TRANS PNP 45V 1A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고4,976	1A	45V	500mV @ 50mA, 500mA	100nA (ICBO)	40 @ 150mA, 2V	1W	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2N5401CTA	Fairchild/ON Semiconductor	TRANS PNP 150V 0.6A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Power - Max: 625mW Frequency - Transition: 400MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,504	600mA	150V	500mV @ 5mA, 50mA	50nA (ICBO)	60 @ 10mA, 5V	625mW	400MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2SB1204T-E	ON Semiconductor	TRANS PNP 50V 8A TP Transistor Type: PNP Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 130MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TP	패키지: TO-251-3 Short Leads, IPak, TO-251AA	재고5,760	8A	50V	500mV @ 200mA, 4A	1µA (ICBO)	200 @ 500mA, 2V	1W	130MHz	150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TP
ZXTN26070CV-7	Diodes Incorporated	TRANS NPN 70V 2A SOT666 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 70V Vce Saturation (Max) @ Ib, Ic: 330V @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Power - Max: 600mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	패키지: SOT-563, SOT-666	재고432,000	2A	70V	330V @ 200mA, 2A	100nA (ICBO)	200 @ 100mA, 5V	600mW	200MHz	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-666
BC856AW,115	Nexperia USA Inc.	TRANS PNP 65V 0.1A SOT323 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고7,696	100mA	65V	600mV @ 5mA, 100mA	15nA (ICBO)	125 @ 2mA, 5V	200mW	100MHz	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
ZXTP722MATA	Diodes Incorporated	TRANS PNP 70V 2.5A 3-DFN Transistor Type: PNP Current - Collector (Ic) (Max): 2.5A Voltage - Collector Emitter Breakdown (Max): 70V Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V Power - Max: 3W Frequency - Transition: 180MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UDFN Supplier Device Package: DFN2020B-3	패키지: 3-UDFN	재고5,472	2.5A	70V	260mV @ 200mA, 1.5A	25nA	40 @ 1.5A, 5V	3W	180MHz	-55°C ~ 150°C (TJ)	Surface Mount	3-UDFN	DFN2020B-3
MMST3904T146	Rohm Semiconductor	TRANS NPN 40V 0.2A SOT-346 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 200mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	패키지: TO-236-3, SC-59, SOT-23-3	재고399,960	200mA	40V	300mV @ 5mA, 50mA	50nA	100 @ 10mA, 1V	200mW	300MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
FMMT560QTA	Diodes Incorporated	TRANS PNP 500V 0.15A SOT23-3 Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 500V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 10V Power - Max: 500mW Frequency - Transition: 60MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고24,372	150mA	500V	500mV @ 10mA, 50mA	100nA	80 @ 50mA, 10V	500mW	60MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
TIP50	STMicroelectronics	TRANS NPN 400V 1A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Power - Max: 2W Frequency - Transition: 10MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고116,064	1A	400V	1V @ 200mA, 1A	1mA	30 @ 300mA, 10V	2W	10MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220AB
2SD1651C-CTV-YB	onsemi	BIP NPN 6A 800V Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BC817K-16HR	Nexperia USA Inc.	TRANS NPN 45V 0.5A TO236AB Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 350 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	패키지: -	재고1,881	500 mA	45 V	700mV @ 50mA, 500mA	100nA (ICBO)	100 @ 100mA, 1V	350 mW	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB
BSP19-QX	Nexperia USA Inc.	BSP19-Q/SOT223/SC-73 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 350 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 1.2 W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: -	Request a Quote	100 mA	350 V	500mV @ 4mA, 50mA	20nA (ICBO)	40 @ 20mA, 10V	1.2 W	70MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
2SA954-A	NEC Corporation	TRANS PNP 80V 0.3A TO92 Transistor Type: PNP Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 1V Power - Max: 600 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: -	Request a Quote	300 mA	80 V	600mV @ 30mA, 300mA	100nA (ICBO)	90 @ 50mA, 1V	600 mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BC856BM3-TP	Micro Commercial Co	Interface Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 265 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SOT-723	패키지: -	Request a Quote	100 mA	65 V	650mV @ 5mA, 100mA	1mA	200 @ 2mA, 5V	265 mW	100MHz	-55°C ~ 150°C	Surface Mount	SOT-723	SOT-723
PZTA42-ZLX	Nexperia USA Inc.	TRANS NPN 300V 0.1A SOT223 Transistor Type: NPN Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Power - Max: 1.2 W Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: -	Request a Quote	100 mA	300 V	500mV @ 2mA, 20mA	20nA (ICBO)	40 @ 30mA, 10V	1.2 W	50MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
JANKCDP2N5152	Microchip Technology	RH POWER BJT Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	패키지: -	Request a Quote	2 A	80 V	1.5V @ 500mA, 5A	50µA	30 @ 2.5A, 5V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
2SCR586JGTLL	Rohm Semiconductor	TRANS NPN 80V 5A TO263AB Transistor Type: NPN Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Power - Max: 40 W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	패키지: -	재고936	5 A	80 V	300mV @ 100mA, 2A	1µA (ICBO)	120 @ 500mA, 3V	40 W	200MHz	150°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB
MPSA63-PBFREE	Central Semiconductor Corp	TRANS PNP DARL 20V 0.5A TO92-3 Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 20 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 625 mW Frequency - Transition: 125MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: -	재고36,378	500 mA	20 V	1.5V @ 100µA, 100mA	100nA (ICBO)	10000 @ 100mA, 5V	625 mW	125MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2SC2073-BP	Micro Commercial Co	TRANS NPN 150V 1.5A TO220AB Transistor Type: NPN Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V Power - Max: 1.5 W Frequency - Transition: 4MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: -	Request a Quote	1.5 A	150 V	1.5V @ 50mA, 500mA	10µA (ICBO)	40 @ 500mA, 10V	1.5 W	4MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
2N6326	Microchip Technology	TRANS PNP 60V 30A TO3 Transistor Type: PNP Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 200 W Frequency - Transition: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	패키지: -	Request a Quote	30 A	60 V	-	-	-	200 W	-	-	Through Hole	TO-204AA, TO-3	TO-3

2SA1020-O(F,M)

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

패키지: TO-226-3, TO-92-3 Long Body

재고7,392

2A

50V

500mV @ 50mA, 1A

1µA (ICBO)

70 @ 500mA, 2V

900mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Long Body

TO-92MOD

BC847CW/ZLF

Nexperia USA Inc.

TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3

패키지: SC-70, SOT-323

재고3,376

-

Surface Mount

SC-70, SOT-323

SC-70-3

FJP5554

Fairchild/ON Semiconductor

TRANS NPN 400V 4A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3.5A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 800mA, 3V
Power - Max: 70W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고2,000

4A

400V

1.5V @ 1A, 3.5A

250µA

20 @ 800mA, 3V

70W

-

150°C (TJ)

Through Hole

TO-220-3

MPSA43ZL1G

ON Semiconductor

TRANS NPN 200V 0.5A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 200V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V
Power - Max: 625mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,344

500mA

200V

500mV @ 2mA, 20mA

100nA (ICBO)

25 @ 1mA, 10V

625mW

50MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

ZX5T849ZTA

Diodes Incorporated

TRANS NPN 30V 6A SOT-89

Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 190mV @ 300mA, 6.5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Power - Max: 2.1W
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고7,792

6A

30V

190mV @ 300mA, 6.5A

20nA (ICBO)

100 @ 1A, 1V

2.1W

140MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

PBSS9110S,126

NXP

TRANS PNP 100V 1A TO92

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
Power - Max: 830mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고2,816

1A

100V

320mV @ 100mA, 1A

100nA

150 @ 500mA, 5V

830mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSD288YTU

Fairchild/ON Semiconductor

TRANS NPN 55V 3A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 55V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V
Power - Max: 25W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고7,680

3A

55V

1V @ 100mA, 1A

50µA (ICBO)

120 @ 500mA, 5V

25W

-

150°C (TJ)

Through Hole

TO-220-3

KST4124MTF

Fairchild/ON Semiconductor

TRANS NPN 25V 0.2A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Power - Max: 350mW
Frequency - Transition: 300MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고36,000

200mA

25V

300mV @ 5mA, 50mA

50nA (ICBO)

120 @ 2mA, 1V

350mW

300MHz

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

BC636BU

Fairchild/ON Semiconductor

TRANS PNP 45V 1A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고4,976

1A

45V

500mV @ 50mA, 500mA

100nA (ICBO)

40 @ 150mA, 2V

1W

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2N5401CTA

Fairchild/ON Semiconductor

TRANS PNP 150V 0.6A TO-92

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 400MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,504

600mA

150V

500mV @ 5mA, 50mA

50nA (ICBO)

60 @ 10mA, 5V

625mW

400MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2SB1204T-E

ON Semiconductor

TRANS PNP 50V 8A TP

Transistor Type: PNP
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP

패키지: TO-251-3 Short Leads, IPak, TO-251AA

재고5,760

8A

50V

500mV @ 200mA, 4A

1µA (ICBO)

200 @ 500mA, 2V

1W

130MHz

150°C (TJ)

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

TP

ZXTN26070CV-7

Diodes Incorporated

TRANS NPN 70V 2A SOT666

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 330V @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Power - Max: 600mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666

패키지: SOT-563, SOT-666

재고432,000

2A

70V

330V @ 200mA, 2A

100nA (ICBO)

200 @ 100mA, 5V

600mW

200MHz

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-666

BC856AW,115

Nexperia USA Inc.

TRANS PNP 65V 0.1A SOT323

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고7,696

100mA

65V

600mV @ 5mA, 100mA

15nA (ICBO)

125 @ 2mA, 5V

200mW

100MHz

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

ZXTP722MATA

Diodes Incorporated

TRANS PNP 70V 2.5A 3-DFN

Transistor Type: PNP
Current - Collector (Ic) (Max): 2.5A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Power - Max: 3W
Frequency - Transition: 180MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Supplier Device Package: DFN2020B-3

패키지: 3-UDFN

재고5,472

2.5A

70V

260mV @ 200mA, 1.5A

25nA

40 @ 1.5A, 5V

3W

180MHz

-55°C ~ 150°C (TJ)

Surface Mount

3-UDFN

DFN2020B-3

MMST3904T146

Rohm Semiconductor

TRANS NPN 40V 0.2A SOT-346

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 200mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

패키지: TO-236-3, SC-59, SOT-23-3

재고399,960

200mA

40V

300mV @ 5mA, 50mA

50nA

100 @ 10mA, 1V

200mW

300MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

FMMT560QTA

Diodes Incorporated

TRANS PNP 500V 0.15A SOT23-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 500V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 10V
Power - Max: 500mW
Frequency - Transition: 60MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고24,372

150mA

500V

500mV @ 10mA, 50mA

100nA

80 @ 50mA, 10V

500mW

60MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

TIP50

STMicroelectronics

TRANS NPN 400V 1A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Power - Max: 2W
Frequency - Transition: 10MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고116,064

1A

400V

1V @ 200mA, 1A

1mA

30 @ 300mA, 10V

2W

10MHz

150°C (TJ)

Through Hole

TO-220-3

TO-220AB

2SD1651C-CTV-YB

onsemi

BIP NPN 6A 800V

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

BC817K-16HR

Nexperia USA Inc.

TRANS NPN 45V 0.5A TO236AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 350 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB

패키지: -

재고1,881

500 mA

45 V

700mV @ 50mA, 500mA

100nA (ICBO)

100 @ 100mA, 1V

350 mW

100MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB

BSP19-QX

Nexperia USA Inc.

BSP19-Q/SOT223/SC-73

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Power - Max: 1.2 W
Frequency - Transition: 70MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: -

Request a Quote

100 mA

350 V

500mV @ 4mA, 50mA

20nA (ICBO)

40 @ 20mA, 10V

1.2 W

70MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

2SA954-A

NEC Corporation

TRANS PNP 80V 0.3A TO92

Transistor Type: PNP
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 1V
Power - Max: 600 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: -

Request a Quote

300 mA

80 V

600mV @ 30mA, 300mA

100nA (ICBO)

90 @ 50mA, 1V

600 mW

100MHz

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BC856BM3-TP

Micro Commercial Co

Interface

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 265 mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SOT-723

패키지: -

Request a Quote

100 mA

65 V

650mV @ 5mA, 100mA

1mA

200 @ 2mA, 5V

265 mW

100MHz

-55°C ~ 150°C

Surface Mount

SOT-723

PZTA42-ZLX

Nexperia USA Inc.

TRANS NPN 300V 0.1A SOT223

Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 1.2 W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: -

Request a Quote

100 mA

300 V

500mV @ 2mA, 20mA

20nA (ICBO)

40 @ 30mA, 10V

1.2 W

50MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

JANKCDP2N5152

Microchip Technology

RH POWER BJT

Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)

패키지: -

Request a Quote

2 A

80 V

1.5V @ 500mA, 5A

50µA

30 @ 2.5A, 5V

1 W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39 (TO-205AD)

2SCR586JGTLL

Rohm Semiconductor

TRANS NPN 80V 5A TO263AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Power - Max: 40 W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB

패키지: -

재고936

5 A

80 V

300mV @ 100mA, 2A

1µA (ICBO)

120 @ 500mA, 3V

40 W

200MHz

150°C (TJ)

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB

MPSA63-PBFREE

Central Semiconductor Corp

TRANS PNP DARL 20V 0.5A TO92-3

Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 625 mW
Frequency - Transition: 125MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: -

재고36,378

500 mA

20 V

1.5V @ 100µA, 100mA

100nA (ICBO)

10000 @ 100mA, 5V

625 mW

125MHz

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2SC2073-BP

Micro Commercial Co

TRANS NPN 150V 1.5A TO220AB

Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
Power - Max: 1.5 W
Frequency - Transition: 4MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: -

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1.5 A

150 V

1.5V @ 50mA, 500mA

10µA (ICBO)

40 @ 500mA, 10V

1.5 W

4MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

2N6326

Microchip Technology

TRANS PNP 60V 30A TO3

Transistor Type: PNP
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 200 W
Frequency - Transition: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3

패키지: -

Request a Quote

30 A

60 V

-

200 W

-

Through Hole

TO-204AA, TO-3

TO-3