페이지 76 - 트랜지스터 - 양극(BJT) - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SD1835S-AAX	ON Semiconductor	TRANSISTOR NPN Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,776	-	-	-	-	-	-	-	-	-	-	-
BC548BRL1	ON Semiconductor	TRANS NPN 30V 0.1A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 625mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,088	100mA	30V	250mV @ 500µA, 10mA	15nA	200 @ 2mA, 5V	625mW	300MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
FJAF6806DTU	Fairchild/ON Semiconductor	TRANS NPN 750V 6A TO-3PF Transistor Type: NPN Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 750V Vce Saturation (Max) @ Ib, Ic: 5V @ 1A, 4A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 4A, 5V Power - Max: 50W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-94 Supplier Device Package: TO-3PF	패키지: SC-94	재고7,408	6A	750V	5V @ 1A, 4A	1mA	4 @ 4A, 5V	50W	-	150°C (TJ)	Through Hole	SC-94	TO-3PF
KSB772YSTSTU	Fairchild/ON Semiconductor	TRANS PNP 30V 3A TO-126 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V Power - Max: 1W Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126-3	패키지: TO-225AA, TO-126-3	재고5,360	3A	30V	500mV @ 200mA, 2A	1µA (ICBO)	160 @ 1A, 2V	1W	80MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126-3
FMMT6520TC	Diodes Incorporated	TRANS PNP 350V 0.5A SOT23-3 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Power - Max: 330mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고7,008	500mA	350V	1V @ 5mA, 50mA	50nA (ICBO)	20 @ 50mA, 10V	330mW	50MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2SD1445AQ	Panasonic Electronic Components	TRANS NPN 40V 10A TO-220F Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 600mV @ 330mA, 10A Current - Collector Cutoff (Max): 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 3A, 2V Power - Max: 2W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F-A1	패키지: TO-220-3 Full Pack	재고3,088	10A	40V	600mV @ 330mA, 10A	50µA (ICBO)	90 @ 3A, 2V	2W	120MHz	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F-A1
JANTXV2N5665	Microsemi Corporation	TRANS NPN 300V 5A TO66 Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V Power - Max: 2.5W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA)	패키지: TO-213AA, TO-66-2	재고4,416	5A	300V	1V @ 1A, 5A	200nA	25 @ 1A, 5V	2.5W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-213AA, TO-66-2	TO-66 (TO-213AA)
JAN2N2219A	Microsemi Corporation	TRANS NPN 50V 0.8A Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800mW Frequency - Transition: - Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: TO-205AD, TO-39-3 Metal Can	재고31,176	800mA	50V	1V @ 50mA, 500mA	10nA	100 @ 150mA, 10V	800mW	-	-55°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
2SD1803S-TL-E	ON Semiconductor	TRANS NPN 50V 5A TP-FA Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: 2-TP-FA	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고813,972	5A	50V	400mV @ 150mA, 3A	1µA (ICBO)	140 @ 500mA, 2V	1W	180MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	2-TP-FA
2SD1758TLP	Rohm Semiconductor	TRANS NPN 32V 2A SOT-428 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 32V Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V Power - Max: 10W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: CPT3	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고5,104	2A	32V	800mV @ 200mA, 2A	1µA (ICBO)	82 @ 500mA, 3V	10W	100MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	CPT3
ZXTP5401FLTA	Diodes Incorporated	TRANS PNP 150V 0.6A SOT23-3 Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Power - Max: 330mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고2,586,276	600mA	150V	500mV @ 5mA, 50mA	50nA (ICBO)	60 @ 10mA, 5V	330mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
NSVMSD601-RT1G	ON Semiconductor	TRANS NPN 50V BIPOLAR SC59-3 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,512	-	-	-	-	-	-	-	-	-	-	-
SMMBT5551LT3G	ON Semiconductor	TRANS NPN 160V 0.6A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Power - Max: 225mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고7,312	600mA	160V	200mV @ 5mA, 50mA	100nA	80 @ 10mA, 5V	225mW	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
BC846B RFG	TSC America Inc.	TRANSISTOR, NPN, 65V, 0.1A, 200A Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고4,768	100mA	65V	500mV @ 5mA, 100mA	100nA (ICBO)	200 @ 2mA, 5V	200mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
TIP142T	STMicroelectronics	TRANS NPN DARL 100V 10A TO-220 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Power - Max: 80W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고97,512	10A	100V	3V @ 40mA, 10A	2mA	1000 @ 5A, 4V	80W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220
PBSS5612PA,115	Nexperia USA Inc.	TRANS PNP 12V 6A SOT1061 Transistor Type: PNP Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 6A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 190 @ 2A, 2V Power - Max: 2.1W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UDFN Supplier Device Package: 3-HUSON (2x2)	패키지: 3-UDFN	재고7,424	6A	12V	300mV @ 300mA, 6A	100nA	190 @ 2A, 2V	2.1W	60MHz	150°C (TJ)	Surface Mount	3-UDFN	3-HUSON (2x2)
2SA10340SL	Panasonic Electronic Components	TRANS PNP 35V 0.05A MINI-3 Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 35V Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 260 @ 2mA, 5V Power - Max: 200mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	패키지: TO-236-3, SC-59, SOT-23-3	재고23,118	50mA	35V	600mV @ 10mA, 100mA	1µA	260 @ 2mA, 5V	200mW	200MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1
DN0150BLP4-7	Diodes Incorporated	TRANS NPN 50V 0.1A X1-DFN1006-3 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 450mW Frequency - Transition: 60MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Supplier Device Package: X2-DFN1006-3	패키지: 3-XFDFN	재고29,880	100mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	450mW	60MHz	-55°C ~ 150°C (TJ)	Surface Mount	3-XFDFN	X2-DFN1006-3
KSC5502DTTU	Fairchild/ON Semiconductor	TRANS NPN 600V 2A TO-220 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 600V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 1A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 1A, 1V Power - Max: 50W Frequency - Transition: 11MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고13,284	2A	600V	1.5V @ 200mA, 1A	100µA	4 @ 1A, 1V	50W	11MHz	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
MMBTA44-G	Comchip Technology	NPN TRANSISTOR 200MA 400V SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V Power - Max: 350mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고2,960	200mA	400V	750mV @ 5mA, 50mA	100nA (ICBO)	50 @ 10mA, 10V	350mW	-	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
PZT2222A	Fairchild/ON Semiconductor	TRANS NPN 40V 1A SOT-223 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1W Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223-4	패키지: TO-261-4, TO-261AA	재고939,636	1A	40V	1V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	1W	300MHz	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223-4
JANSM2N2369AUB-TR	Microchip Technology	TRANS NPN 20V UB Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 20 V Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Power - Max: 360 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	-	20 V	450mV @ 10mA, 100mA	400nA	20 @ 100mA, 1V	360 mW	-	-65°C ~ 200°C	Surface Mount	3-SMD, No Lead	UB
MMBT5401-FS	Fairchild Semiconductor	TRANS PNP 150V 0.6A SOT23-3 Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Power - Max: 350 mW Frequency - Transition: 300MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	600 mA	150 V	500mV @ 5mA, 50mA	50nA (ICBO)	60 @ 10mA, 5V	350 mW	300MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2N699-PBFREE	Central Semiconductor Corp	TRANS NPN 80V TO39 Transistor Type: NPN Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA Current - Collector Cutoff (Max): 2µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 2 W Frequency - Transition: 50MHz Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	패키지: -	Request a Quote	-	80 V	5V @ 15mA, 150mA	2µA (ICBO)	40 @ 150mA, 10V	2 W	50MHz	-65°C ~ 175°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
JAN2N2812	Microchip Technology	TRANS NPN 60V 10A TO61 Transistor Type: NPN Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: 200°C (TJ) Mounting Type: Stud Mount Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud Supplier Device Package: TO-61	패키지: -	Request a Quote	10 A	60 V	-	-	-	-	-	200°C (TJ)	Stud Mount	TO-211MA, TO-210AC, TO-61-4, Stud	TO-61
BCP69E6327	Infineon Technologies	POWER BIPOLAR TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
PBSS5230T-ZLR	Nexperia USA Inc.	PBSS5230T/ZLR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MMBT2222A-HF	Comchip Technology	TRANS NPN 40V 0.6A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 300 mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	600 mA	40 V	300mV @ 15mA, 150mA	10nA	100 @ 150mA, 10V	300 mW	300MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3

2SD1835S-AAX

ON Semiconductor

TRANSISTOR NPN

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,776

-

BC548BRL1

ON Semiconductor

TRANS NPN 30V 0.1A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,088

100mA

30V

250mV @ 500µA, 10mA

15nA

200 @ 2mA, 5V

625mW

300MHz

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

FJAF6806DTU

Fairchild/ON Semiconductor

TRANS NPN 750V 6A TO-3PF

Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 750V
Vce Saturation (Max) @ Ib, Ic: 5V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 4A, 5V
Power - Max: 50W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-94
Supplier Device Package: TO-3PF

패키지: SC-94

재고7,408

6A

750V

5V @ 1A, 4A

1mA

4 @ 4A, 5V

50W

-

150°C (TJ)

Through Hole

SC-94

TO-3PF

KSB772YSTSTU

Fairchild/ON Semiconductor

TRANS PNP 30V 3A TO-126

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Power - Max: 1W
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3

패키지: TO-225AA, TO-126-3

재고5,360

3A

30V

500mV @ 200mA, 2A

1µA (ICBO)

160 @ 1A, 2V

1W

80MHz

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126-3

FMMT6520TC

Diodes Incorporated

TRANS PNP 350V 0.5A SOT23-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Power - Max: 330mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고7,008

500mA

350V

1V @ 5mA, 50mA

50nA (ICBO)

20 @ 50mA, 10V

330mW

50MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2SD1445AQ

Panasonic Electronic Components

TRANS NPN 40V 10A TO-220F

Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 330mA, 10A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 3A, 2V
Power - Max: 2W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F-A1

패키지: TO-220-3 Full Pack

재고3,088

10A

40V

600mV @ 330mA, 10A

50µA (ICBO)

90 @ 3A, 2V

2W

120MHz

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F-A1

JANTXV2N5665

Microsemi Corporation

TRANS NPN 300V 5A TO66

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
Power - Max: 2.5W
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)

패키지: TO-213AA, TO-66-2

재고4,416

5A

300V

1V @ 1A, 5A

200nA

25 @ 1A, 5V

2.5W

-

-65°C ~ 200°C (TJ)

Through Hole

TO-213AA, TO-66-2

TO-66 (TO-213AA)

JAN2N2219A

Microsemi Corporation

TRANS NPN 50V 0.8A

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 800mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

재고31,176

800mA

50V

1V @ 50mA, 500mA

10nA

100 @ 150mA, 10V

800mW

-

-55°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

2SD1803S-TL-E

ON Semiconductor

TRANS NPN 50V 5A TP-FA

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: 2-TP-FA

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고813,972

5A

50V

400mV @ 150mA, 3A

1µA (ICBO)

140 @ 500mA, 2V

1W

180MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

2-TP-FA

2SD1758TLP

Rohm Semiconductor

TRANS NPN 32V 2A SOT-428

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V
Power - Max: 10W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPT3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고5,104

2A

32V

800mV @ 200mA, 2A

1µA (ICBO)

82 @ 500mA, 3V

10W

100MHz

150°C (TJ)

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

CPT3

ZXTP5401FLTA

Diodes Incorporated

TRANS PNP 150V 0.6A SOT23-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 330mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고2,586,276

600mA

150V

500mV @ 5mA, 50mA

50nA (ICBO)

60 @ 10mA, 5V

330mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

NSVMSD601-RT1G

ON Semiconductor

TRANS NPN 50V BIPOLAR SC59-3

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,512

-

SMMBT5551LT3G

ON Semiconductor

TRANS NPN 160V 0.6A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 225mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고7,312

600mA

160V

200mV @ 5mA, 50mA

100nA

80 @ 10mA, 5V

225mW

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

BC846B RFG

TSC America Inc.

TRANSISTOR, NPN, 65V, 0.1A, 200A

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고4,768

100mA

65V

500mV @ 5mA, 100mA

100nA (ICBO)

200 @ 2mA, 5V

200mW

100MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

TIP142T

STMicroelectronics

TRANS NPN DARL 100V 10A TO-220

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Power - Max: 80W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고97,512

10A

100V

3V @ 40mA, 10A

2mA

1000 @ 5A, 4V

80W

-

150°C (TJ)

Through Hole

TO-220-3

TO-220

PBSS5612PA,115

Nexperia USA Inc.

TRANS PNP 12V 6A SOT1061

Transistor Type: PNP
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 190 @ 2A, 2V
Power - Max: 2.1W
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Supplier Device Package: 3-HUSON (2x2)

패키지: 3-UDFN

재고7,424

6A

12V

300mV @ 300mA, 6A

100nA

190 @ 2A, 2V

2.1W

60MHz

150°C (TJ)

Surface Mount

3-UDFN

3-HUSON (2x2)

2SA10340SL

Panasonic Electronic Components

TRANS PNP 35V 0.05A MINI-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 35V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 260 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1

패키지: TO-236-3, SC-59, SOT-23-3

재고23,118

50mA

35V

600mV @ 10mA, 100mA

1µA

260 @ 2mA, 5V

200mW

200MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G1

DN0150BLP4-7

Diodes Incorporated

TRANS NPN 50V 0.1A X1-DFN1006-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 450mW
Frequency - Transition: 60MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Supplier Device Package: X2-DFN1006-3

패키지: 3-XFDFN

재고29,880

100mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

450mW

60MHz

-55°C ~ 150°C (TJ)

Surface Mount

3-XFDFN

X2-DFN1006-3

KSC5502DTTU

Fairchild/ON Semiconductor

TRANS NPN 600V 2A TO-220

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 600V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 1A, 1V
Power - Max: 50W
Frequency - Transition: 11MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고13,284

2A

600V

1.5V @ 200mA, 1A

100µA

4 @ 1A, 1V

50W

11MHz

150°C (TJ)

Through Hole

TO-220-3

MMBTA44-G

Comchip Technology

NPN TRANSISTOR 200MA 400V SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Power - Max: 350mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고2,960

200mA

400V

750mV @ 5mA, 50mA

100nA (ICBO)

50 @ 10mA, 10V

350mW

-

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

PZT2222A

Fairchild/ON Semiconductor

TRANS NPN 40V 1A SOT-223

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-4

패키지: TO-261-4, TO-261AA

재고939,636

1A

40V

1V @ 50mA, 500mA

10nA (ICBO)

100 @ 150mA, 10V

1W

300MHz

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223-4

JANSM2N2369AUB-TR

Microchip Technology

TRANS NPN 20V UB

Transistor Type: NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 20 V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Power - Max: 360 mW
Frequency - Transition: -
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

-

20 V

450mV @ 10mA, 100mA

400nA

20 @ 100mA, 1V

360 mW

-

-65°C ~ 200°C

Surface Mount

3-SMD, No Lead

UB

MMBT5401-FS

Fairchild Semiconductor

TRANS PNP 150V 0.6A SOT23-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Power - Max: 350 mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

Request a Quote

600 mA

150 V

500mV @ 5mA, 50mA

50nA (ICBO)

60 @ 10mA, 5V

350 mW

300MHz

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2N699-PBFREE

Central Semiconductor Corp

TRANS NPN 80V TO39

Transistor Type: NPN
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 2µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 2 W
Frequency - Transition: 50MHz
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

패키지: -

Request a Quote

-

80 V

5V @ 15mA, 150mA

2µA (ICBO)

40 @ 150mA, 10V

2 W

50MHz

-65°C ~ 175°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

JAN2N2812

Microchip Technology

TRANS NPN 60V 10A TO61

Transistor Type: NPN
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: 200°C (TJ)
Mounting Type: Stud Mount
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Supplier Device Package: TO-61

패키지: -

Request a Quote

10 A

60 V

-

200°C (TJ)

Stud Mount

TO-211MA, TO-210AC, TO-61-4, Stud

TO-61

BCP69E6327

Infineon Technologies

POWER BIPOLAR TRANSISTOR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

PBSS5230T-ZLR

Nexperia USA Inc.

PBSS5230T/ZLR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MMBT2222A-HF

Comchip Technology

TRANS NPN 40V 0.6A SOT-23

Transistor Type: NPN
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 300 mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

Request a Quote

600 mA

40 V

300mV @ 15mA, 150mA

10nA

100 @ 150mA, 10V

300 mW

300MHz

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3