페이지 100 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  100/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA192001EV4XWSA1
Infineon Technologies

FET RF 65V 1.99GHZ H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 15.9dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.8A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36260-2
패키지: 2-Flatpack, Fin Leads
재고3,568
1.99GHz
15.9dB
30V
10µA
-
1.8A
50W
65V
2-Flatpack, Fin Leads
H-36260-2
MAGX-000035-01500P
M/A-Com Technology Solutions

FET RF 65V 3.5GHZ 14DFN

  • Transistor Type: HEMT
  • Frequency: 3.5GHz
  • Gain: 14dB
  • Voltage - Test: 50V
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: 35mA
  • Power - Output: 14W
  • Voltage - Rated: 65V
  • Package / Case: 14-VDFN Exposed Pad
  • Supplier Device Package: 14-DFN (3x6)
패키지: 14-VDFN Exposed Pad
재고7,632
3.5GHz
14dB
50V
1mA
-
35mA
14W
65V
14-VDFN Exposed Pad
14-DFN (3x6)
ON5450,518
NXP

MOSFET RF 64QFP

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,192
-
-
-
-
-
-
-
-
-
-
MRF8P20160HSR5
NXP

FET RF 2CH 65V 1.92GHZ

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.92GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 37W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
패키지: NI-780S-4
재고5,664
1.92GHz
16.5dB
28V
-
-
550mA
37W
65V
NI-780S-4
NI-780S-4
BLF6G20LS-180RN:11
Ampleon USA Inc.

RF FET LDMOS 65V 17.2DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 17.2dB
  • Voltage - Test: 30V
  • Current Rating: 49A
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고3,408
1.93GHz ~ 1.99GHz
17.2dB
30V
49A
-
1.4A
40W
65V
SOT-502B
SOT502B
MRFE6S8046NR1
NXP

FET RF 66V 894MHZ TO-270-4

  • Transistor Type: LDMOS
  • Frequency: 894MHz
  • Gain: 19.8dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 35.5W
  • Voltage - Rated: 66V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270AB
재고4,448
894MHz
19.8dB
28V
-
-
300mA
35.5W
66V
TO-270AB
TO-270 WB-4
MRF5S4125NBR1
NXP

FET RF 65V 465MHZ TO-272-4

  • Transistor Type: LDMOS
  • Frequency: 465MHz
  • Gain: 23dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 25W
  • Voltage - Rated: 65V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
패키지: TO-272BB
재고3,552
465MHz
23dB
28V
-
-
1.1A
25W
65V
TO-272BB
TO-272 WB-4
BLF7G20LS-140P,118
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT1121B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 850mA
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1121B
  • Supplier Device Package: CDFM4
패키지: SOT-1121B
재고5,008
1.81GHz ~ 1.88GHz
17.5dB
28V
-
-
850mA
60W
65V
SOT-1121B
CDFM4
PTFA091201EV4R250XTMA1
Infineon Technologies

IC FET RF LDMOS 120W H-36248-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 110W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36248-2
패키지: 2-Flatpack, Fin Leads
재고5,328
960MHz
19dB
28V
10µA
-
750mA
110W
65V
2-Flatpack, Fin Leads
H-36248-2
AFV141KHR5
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.4GHz
  • Gain: 17.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1000W
  • Voltage - Rated: 105V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
패키지: SOT-979A
재고4,992
1.4GHz
17.7dB
50V
-
-
100mA
1000W
105V
SOT-979A
NI-1230-4H
2731GN-110M
Microsemi Corporation

FETS RF GAN 150V 2.7-3.1GHZ 55QP

  • Transistor Type: 2 N-Channel (Dual) Common Source
  • Frequency: 2.7GHz ~ 3.1GHz
  • Gain: 11.7dB ~ 12.2dB
  • Voltage - Test: 60V
  • Current Rating: 2.5mA
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 125W
  • Voltage - Rated: 150V
  • Package / Case: 55QP
  • Supplier Device Package: 55QP
패키지: 55QP
재고2,160
2.7GHz ~ 3.1GHz
11.7dB ~ 12.2dB
60V
2.5mA
-
250mA
125W
150V
55QP
55QP
VRF152MP
Microsemi Corporation

RF MOSFET N-CHANNEL 50V M174

  • Transistor Type: N-Channel
  • Frequency: 175MHz
  • Gain: 14dB
  • Voltage - Test: 50V
  • Current Rating: 50µA
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 150W
  • Voltage - Rated: 130V
  • Package / Case: M174
  • Supplier Device Package: M174
패키지: M174
재고6,576
175MHz
14dB
50V
50µA
-
250mA
150W
130V
M174
M174
MRF8P20165WHSR5
NXP

FET RF 2CH 65V 2.01GHZ NI780S4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.98GHz ~ 2.01GHz
  • Gain: 14.8dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 37W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
패키지: NI-780S-4
재고6,396
1.98GHz ~ 2.01GHz
14.8dB
28V
-
-
550mA
37W
65V
NI-780S-4
NI-780S-4
BLF888BS,112
Ampleon USA Inc.

RF MOSFET LDMOS DUAL 50V SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 470MHz ~ 860MHz
  • Gain: 21dB
  • Voltage - Test: 50V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 250W
  • Voltage - Rated: 104V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
패키지: SOT539B
재고6,240
470MHz ~ 860MHz
21dB
50V
2.8µA
-
-
250W
104V
SOT539B
SOT539B
CGHV96050F1
Cree/Wolfspeed

FET RF 100V 9.6GHZ 440210

  • Transistor Type: HEMT
  • Frequency: 7.9GHz ~ 9.6GHz
  • Gain: 17dB
  • Voltage - Test: 40V
  • Current Rating: 13A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 32W
  • Voltage - Rated: 100V
  • Package / Case: 440210
  • Supplier Device Package: 440210
패키지: 440210
재고7,104
7.9GHz ~ 9.6GHz
17dB
40V
13A
-
500mA
32W
100V
440210
440210
AFT09MS007NT1
NXP

FET RF 30V 870MHZ PLD1.5W

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 15.2dB
  • Voltage - Test: 7.5V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 7.3W
  • Voltage - Rated: 30V
  • Package / Case: PLD-1.5W-2
  • Supplier Device Package: PLD-1.5W-2
패키지: PLD-1.5W-2
재고22,080
870MHz
15.2dB
7.5V
-
-
100mA
7.3W
30V
PLD-1.5W-2
PLD-1.5W-2
CGH40025F
Cree/Wolfspeed

FET RF 84V 6GHZ 440166

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 6GHz
  • Gain: 13dB
  • Voltage - Test: 28V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 30W
  • Voltage - Rated: 84V
  • Package / Case: 440166
  • Supplier Device Package: 440166
패키지: 440166
재고21,060
0Hz ~ 6GHz
13dB
28V
7A
-
250mA
30W
84V
440166
440166
ART150PEXY
Ampleon USA Inc.

RF MOSFET LDMOS 65V TO270

  • Transistor Type: LDMOS
  • Frequency: 1MHz ~ 650MHz
  • Gain: 31.2dB
  • Voltage - Test: 65 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 150W
  • Voltage - Rated: 200 V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2F-1
패키지: -
재고342
1MHz ~ 650MHz
31.2dB
65 V
1.4µA
-
500 mA
150W
200 V
TO-270AA
TO-270-2F-1
BLC10G22XS-600AVTZ
Ampleon USA Inc.

RF MOSFET LDMOS 32V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 15.4dB
  • Voltage - Test: 32 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 1.15 A
  • Power - Output: 600W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
패키지: -
재고72
2.11GHz ~ 2.17GHz
15.4dB
32 V
2.8µA
-
1.15 A
600W
65 V
SOT-1258-4
SOT1258-4
BLC10G22XS-301AVTYZ
Ampleon USA Inc.

RF MOSFET LDMOS 30V DFM6

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 15dB
  • Voltage - Test: 30 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 1.1 A
  • Power - Output: 300W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1275-1
  • Supplier Device Package: DFM6
패키지: -
Request a Quote
2.11GHz ~ 2.17GHz
15dB
30 V
1.4µA
-
1.1 A
300W
65 V
SOT-1275-1
DFM6
1011GN-125E
Microchip Technology

RF MOSFET HEMT 50V 55-QQ

  • Transistor Type: HEMT
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 18.75dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 60 mA
  • Power - Output: 150W
  • Voltage - Rated: 125 V
  • Package / Case: 55-QQ
  • Supplier Device Package: 55-QQ
패키지: -
Request a Quote
1.03GHz ~ 1.09GHz
18.75dB
50 V
-
-
60 mA
150W
125 V
55-QQ
55-QQ
A3G35H100-04SR3
NXP

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
GTVA220701FA-V1-R2
MACOM Technology Solutions

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PTFB092707FH-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37288L-4

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 19dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.15 A
  • Power - Output: 60W
  • Voltage - Rated: 65 V
  • Package / Case: H-37288L-4/2
  • Supplier Device Package: H-37288L-4/2
패키지: -
Request a Quote
960MHz
19dB
28 V
-
-
2.15 A
60W
65 V
H-37288L-4/2
H-37288L-4/2
PTFB211501E-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 30V H-36248-2

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 18dB
  • Voltage - Test: 30 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2 A
  • Power - Output: 40W
  • Voltage - Rated: 65 V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36248-2
패키지: -
Request a Quote
2.17GHz
18dB
30 V
-
-
1.2 A
40W
65 V
2-Flatpack, Fin Leads
H-36248-2
ART2K0FESJ
Ampleon USA Inc.

ART2K0FES/SOT539/TRAY

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1MHz ~ 400MHz
  • Gain: 28.9dB
  • Voltage - Test: 65 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 600 mA
  • Power - Output: 2000W
  • Voltage - Rated: 200 V
  • Package / Case: SOT-539BN
  • Supplier Device Package: SOT539BN
패키지: -
Request a Quote
1MHz ~ 400MHz
28.9dB
65 V
1.4µA
-
600 mA
2000W
200 V
SOT-539BN
SOT539BN
A5G21H605W19NR3
NXP

RF MOSFET LDMOS 30V ACP1230S-4

  • Transistor Type: GaN
  • Frequency: 2.11GHz ~ 2.2GHz
  • Gain: 15.1dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 300 mA
  • Power - Output: 85W
  • Voltage - Rated: 125 V
  • Package / Case: OM-780-4S4S
  • Supplier Device Package: OM-780-4S4S
패키지: -
Request a Quote
2.11GHz ~ 2.2GHz
15.1dB
48 V
-
-
300 mA
85W
125 V
OM-780-4S4S
OM-780-4S4S
GTRA214602FC-V1-R2
MACOM Technology Solutions

RF MOSFET HEMT 48V H-37248C-4

  • Transistor Type: HEMT
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 14.4dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150 mA
  • Power - Output: 490W
  • Voltage - Rated: 125 V
  • Package / Case: H-37248C-4
  • Supplier Device Package: H-37248C-4
패키지: -
Request a Quote
2.11GHz ~ 2.17GHz
14.4dB
48 V
-
-
150 mA
490W
125 V
H-37248C-4
H-37248C-4