페이지 13 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  13/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFB192557SHV1R250XTMA1
Infineon Technologies

IC FET RF LDMOS H-34288G-4/2

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.35A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: H-34288G-4/2
  • Supplier Device Package: H-34288G-4/2
패키지: H-34288G-4/2
재고5,872
1.99GHz
19dB
28V
-
-
1.35A
60W
65V
H-34288G-4/2
H-34288G-4/2
PTF210451F V1
Infineon Technologies

IC FET RF LDMOS 45W H-31265-2

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-31265-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고4,816
2.17GHz
14dB
28V
1µA
-
500mA
45W
65V
2-Flatpack, Fin Leads, Flanged
H-31265-2
BLF8G22LS-160BVX
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT1244B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 55W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244B
  • Supplier Device Package: SOT1244B
패키지: SOT-1244B
재고5,808
2.11GHz ~ 2.17GHz
18dB
32V
-
-
1.3A
55W
65V
SOT-1244B
SOT1244B
MAPG-002729-350L00
M/A-Com Technology Solutions

TRANSISTOR RF 350W GAN

  • Transistor Type: -
  • Frequency: 2.7GHz ~ 2.9GHz
  • Gain: 11.5dB
  • Voltage - Test: 50V
  • Current Rating: 10A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 400W
  • Voltage - Rated: 55V
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,152
2.7GHz ~ 2.9GHz
11.5dB
50V
10A
-
500mA
400W
55V
-
-
MRF8S21200HR5
NXP

FET RF 2CH 65V 2.14GHZ NI1230H

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.14GHz
  • Gain: 18.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 48W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
패키지: NI-1230
재고7,984
2.14GHz
18.1dB
28V
-
-
1.4A
48W
65V
NI-1230
NI-1230
MRF8P9300HSR5
NXP

FET RF 2CH 70V 960MHZ NI-1230HS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 960MHz
  • Gain: 19.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.4A
  • Power - Output: 100W
  • Voltage - Rated: 70V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
패키지: NI-1230S
재고6,896
960MHz
19.4dB
28V
-
-
2.4A
100W
70V
NI-1230S
NI-1230S
MRF6V12250HSR3
NXP

FET RF 100V 1.03GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz
  • Gain: 20.3dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 275W
  • Voltage - Rated: 100V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고7,216
1.03GHz
20.3dB
50V
-
-
100mA
275W
100V
NI-780S
NI-780S
MRFE6S9200HSR5
NXP

FET RF 66V 880MHZ NI-880S

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 58W
  • Voltage - Rated: 66V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
패키지: NI-880S
재고5,632
880MHz
21dB
28V
-
-
1.4A
58W
66V
NI-880S
NI-880S
MRFG35010R5
NXP

FET RF 15V 3.55GHZ NI360HF

  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 10dB
  • Voltage - Test: 12V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 180mA
  • Power - Output: 10W
  • Voltage - Rated: 15V
  • Package / Case: NI-360HF
  • Supplier Device Package: NI-360HF
패키지: NI-360HF
재고5,472
3.55GHz
10dB
12V
-
-
180mA
10W
15V
NI-360HF
NI-360HF
hot MRFG35005MT1
NXP

FET RF 15V 3.55GHZ 1.5PLD

  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 11dB
  • Voltage - Test: 12V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 80mA
  • Power - Output: 4.5W
  • Voltage - Rated: 15V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
패키지: PLD-1.5
재고15,072
3.55GHz
11dB
12V
-
-
80mA
4.5W
15V
PLD-1.5
PLD-1.5
MRF5S19150HR5
NXP

FET RF 65V 1.99GHZ NI-880

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 32W
  • Voltage - Rated: 65V
  • Package / Case: NI-880
  • Supplier Device Package: NI-880
패키지: NI-880
재고4,048
1.93GHz ~ 1.99GHz
14dB
28V
-
-
1.4A
32W
65V
NI-880
NI-880
MRF5S19060MBR1
NXP

FET RF 65V 1.99GHZ TO-272-4

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 12W
  • Voltage - Rated: 65V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
패키지: TO-272BB
재고6,368
1.93GHz ~ 1.99GHz
14dB
28V
-
-
750mA
12W
65V
TO-272BB
TO-272 WB-4
2N5555
Fairchild/ON Semiconductor

JFET N-CH 25V 15MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 15mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고6,544
-
-
-
15mA
-
-
-
25V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
NE651R479A-A
CEL

FET RF 8V 1.9GHZ 79A

  • Transistor Type: HFET
  • Frequency: 1.9GHz
  • Gain: 12dB
  • Voltage - Test: 3.5V
  • Current Rating: 1A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 27dBm
  • Voltage - Rated: 8V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 79A
패키지: 4-SMD, Flat Leads
재고6,800
1.9GHz
12dB
3.5V
1A
-
50mA
27dBm
8V
4-SMD, Flat Leads
79A
PTFB090901FAV2R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,304
-
-
-
-
-
-
-
-
-
-
BLF647PSJ
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT1121B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.3GHz
  • Gain: 17.5dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 200W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1121B
  • Supplier Device Package: CDFM4
패키지: SOT-1121B
재고4,304
1.3GHz
17.5dB
32V
-
-
100mA
200W
65V
SOT-1121B
CDFM4
MRF8P20165WHR3
NXP

FET RF 2CH 65V 2.01GHZ NI780-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.98GHz ~ 2.01GHz
  • Gain: 14.8dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 37W
  • Voltage - Rated: 65V
  • Package / Case: NI-780-4
  • Supplier Device Package: NI-780-4
패키지: NI-780-4
재고5,488
1.98GHz ~ 2.01GHz
14.8dB
28V
-
-
550mA
37W
65V
NI-780-4
NI-780-4
PD85006L-E
STMicroelectronics

TRANS RF POWER POWERFLAT5X5

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 17dB
  • Voltage - Test: 13.6V
  • Current Rating: 2A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 5W
  • Voltage - Rated: 40V
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerFLAT? (5x5)
패키지: 8-PowerVDFN
재고3,984
870MHz
17dB
13.6V
2A
-
200mA
5W
40V
8-PowerVDFN
PowerFLAT? (5x5)
CGHV60075D5-GP4
Cree/Wolfspeed

RF MOSFET HEMT 50V DIE

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 125mA
  • Power - Output: 75W
  • Voltage - Rated: 150V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고4,736
6GHz
17dB
50V
-
-
125mA
75W
150V
Die
Die
PD57045TR-E
STMicroelectronics

FET RF 65V 945MHZ POWERSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
패키지: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
재고6,144
945MHz
14.5dB
28V
5A
-
250mA
45W
65V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
AFT27S010NT1
NXP

FET RF NCH 65V 2700MHZ PLD1.5W

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 21.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 90mA
  • Power - Output: 1.26W
  • Voltage - Rated: 65V
  • Package / Case: PLD-1.5W-2
  • Supplier Device Package: PLD-1.5W-2
패키지: PLD-1.5W-2
재고5,024
2.17GHz
21.7dB
28V
-
-
90mA
1.26W
65V
PLD-1.5W-2
PLD-1.5W-2
BLF884P,112
Ampleon USA Inc.

RF FET LDMOS 104V 21DB SOT1121A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 860MHz
  • Gain: 21dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 650mA
  • Power - Output: 150W
  • Voltage - Rated: 104V
  • Package / Case: SOT-1121A
  • Supplier Device Package: CDFM4
패키지: SOT-1121A
재고7,120
860MHz
21dB
50V
-
-
650mA
150W
104V
SOT-1121A
CDFM4
RF5L052K0CB4
STMicroelectronics

RF MOSFET LDMOS 50V D4E

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 19.5dB
  • Voltage - Test: 50 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 2000W
  • Voltage - Rated: 110 V
  • Package / Case: D4E
  • Supplier Device Package: D4E
패키지: -
Request a Quote
500MHz
19.5dB
50 V
1µA
-
200 mA
2000W
110 V
D4E
D4E
MRF24300GNR3
NXP

RF MOSFET HEMT OM780-2

  • Transistor Type: HEMT
  • Frequency: 2.45GHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 300W
  • Voltage - Rated: 32 V
  • Package / Case: OM-780-2G
  • Supplier Device Package: OM-780-2 Gull
패키지: -
Request a Quote
2.45GHz
-
-
-
-
-
300W
32 V
OM-780-2G
OM-780-2 Gull
BLF0910H9LS600U
Ampleon USA Inc.

RF MOSFET LDMOS 50V SOT502B

  • Transistor Type: LDMOS
  • Frequency: 900MHz ~ 930MHz
  • Gain: 18.6dB
  • Voltage - Test: 50 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 90 mA
  • Power - Output: 600W
  • Voltage - Rated: 108 V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: -
재고222
900MHz ~ 930MHz
18.6dB
50 V
2.8µA
-
90 mA
600W
108 V
SOT-502B
SOT502B
PTNC210604MD-V2-R5
MACOM Technology Solutions

RF MOSFET LDMOS 28V 14HB1DSO

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.805GHz ~ 2.2GHz
  • Gain: 27dB
  • Voltage - Test: 28 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 150 mA
  • Power - Output: 60W
  • Voltage - Rated: 65 V
  • Package / Case: 14-PowerSMD Module
  • Supplier Device Package: PG-HB1DSO-14-1
패키지: -
Request a Quote
1.805GHz ~ 2.2GHz
27dB
28 V
1µA
-
150 mA
60W
65 V
14-PowerSMD Module
PG-HB1DSO-14-1
A2G22S190-01SR3
NXP

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
BLC10G18XS-551AVTY
Ampleon USA Inc.

RF MOSFET LDMOS 32V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 16.1dB
  • Voltage - Test: 32 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 1.9 A
  • Power - Output: 705W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
패키지: -
Request a Quote
1.805GHz ~ 1.88GHz
16.1dB
32 V
2.8µA
-
1.9 A
705W
65 V
SOT-1258-4
SOT1258-4