페이지 135 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  135/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFC260202FCV1XWSA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.69GHz
  • Gain: 20dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 170mA
  • Power - Output: 5W
  • Voltage - Rated: 65V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
패키지: H-37248-4
재고5,408
2.69GHz
20dB
28V
-
-
170mA
5W
65V
H-37248-4
H-37248-4
BLF6G20LS-180RN,11
Ampleon USA Inc.

RF FET LDMOS 65V 17.2DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 17.2dB
  • Voltage - Test: 30V
  • Current Rating: 49A
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
패키지: SOT-502B
재고4,448
1.93GHz ~ 1.99GHz
17.2dB
30V
49A
-
1.4A
40W
65V
SOT-502B
SOT502B
hot MRF21010LR1
NXP

FET RF 65V 2.17GHZ NI-360

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 13.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: NI-360
  • Supplier Device Package: NI-360
패키지: NI-360
재고6,128
2.17GHz
13.5dB
28V
-
-
100mA
10W
65V
NI-360
NI-360
MRF5S21045MBR1
NXP

FET RF 68V 2.17GHZ TO272-4

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 10W
  • Voltage - Rated: 68V
  • Package / Case: TO-272-4
  • Supplier Device Package: TO-272 WB-4
패키지: TO-272-4
재고3,200
2.11GHz ~ 2.17GHz
14.5dB
28V
-
-
500mA
10W
68V
TO-272-4
TO-272 WB-4
BF245B,112
NXP

JFET N-CH 30V 15MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 15mA
  • Noise Figure: 1.5dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고4,032
100MHz
-
15V
15mA
1.5dB
-
-
30V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BLF6G38-25,112
Ampleon USA Inc.

RF FET LDMOS 65V 15DB SOT608A

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: 8.2A
  • Noise Figure: -
  • Current - Test: 225mA
  • Power - Output: 4.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-608A
  • Supplier Device Package: CDFM2
패키지: SOT-608A
재고5,344
3.4GHz ~ 3.6GHz
15dB
28V
8.2A
-
225mA
4.5W
65V
SOT-608A
CDFM2
PTFB213208FVV2R0XTMA1
Infineon Technologies

RF MOSFET TRANSISTORS RFP-LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,568
-
-
-
-
-
-
-
-
-
-
PTVA042502FCV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,944
-
-
-
-
-
-
-
-
-
-
PTFB182503ELV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,464
-
-
-
-
-
-
-
-
-
-
PTFA072401FLV5R250XTMA1
Infineon Technologies

RFP-LDMOS GOLDMOS 8

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,104
-
-
-
-
-
-
-
-
-
-
AFV09P350-04GNR3
NXP

FET RF 2CH 105V 920MHZ OM780-4GW

  • Transistor Type: LDMOS (Dual)
  • Frequency: 920MHz
  • Gain: 19.5dB
  • Voltage - Test: 48V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 860mA
  • Power - Output: 100W
  • Voltage - Rated: 105V
  • Package / Case: OM-780G-4L
  • Supplier Device Package: OM-780G-4L
패키지: OM-780G-4L
재고4,000
920MHz
19.5dB
48V
-
-
860mA
100W
105V
OM-780G-4L
OM-780G-4L
hot MRF7S21150HSR3
NXP

FET RF 65V 2.17GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.35A
  • Power - Output: 44W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고6,864
2.11GHz ~ 2.17GHz
17.5dB
28V
-
-
1.35A
44W
65V
NI-780S
NI-780S
hot AFT18S230SR5
NXP

FET RF 65V 1.88GHZ NI780S-6

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.8A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S-6
패키지: NI-780S
재고9,168
1.88GHz
19dB
28V
-
-
1.8A
50W
65V
NI-780S
NI-780S-6
BLF8G24LS-150VU
Ampleon USA Inc.

RF FET LDMOS 65V 19DB SOT1244B

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244B
  • Supplier Device Package: CDFM6
패키지: SOT-1244B
재고5,280
2.3GHz ~ 2.4GHz
19dB
28V
-
-
1.3A
45W
65V
SOT-1244B
CDFM6
MRFE6VP5300NR1
NXP

FET RF 2CH 133V 230MHZ TO-270

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 27dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 300W
  • Voltage - Rated: 133V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270AB
재고4,528
230MHz
27dB
50V
-
-
100mA
300W
133V
TO-270AB
TO-270 WB-4
AFT31150NR5
NXP

IC TRANS RF 150W 32V LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,216
-
-
-
-
-
-
-
-
-
-
MRF171A
M/A-Com Technology Solutions

FET RF 65V 200MHZ 211-07

  • Transistor Type: N-Channel
  • Frequency: 30MHz ~ 200MHz
  • Gain: 19.5dB
  • Voltage - Test: 28V
  • Current Rating: 4.5A
  • Noise Figure: -
  • Current - Test: 25mA
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: 211-07
  • Supplier Device Package: 211-07, Style 2
패키지: 211-07
재고5,776
30MHz ~ 200MHz
19.5dB
28V
4.5A
-
25mA
45W
65V
211-07
211-07, Style 2
hot ATF-50189-BLK
Broadcom Limited

FET RF 7V 2GHZ SOT-89

  • Transistor Type: E-pHEMT
  • Frequency: 2GHz
  • Gain: 15.5dB
  • Voltage - Test: 4.5V
  • Current Rating: 1A
  • Noise Figure: 1.1dB
  • Current - Test: 280mA
  • Power - Output: 29dBm
  • Voltage - Rated: 7V
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
패키지: TO-243AA
재고10,596
2GHz
15.5dB
4.5V
1A
1.1dB
280mA
29dBm
7V
TO-243AA
SOT-89
STB60N06HDT4
onsemi

RF MOSFET 60V D2PAK

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PXAC243502FV-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37275-4

  • Transistor Type: LDMOS
  • Frequency: 2.4GHz
  • Gain: 15dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 850 mA
  • Power - Output: 68W
  • Voltage - Rated: 65 V
  • Package / Case: H-37275-4
  • Supplier Device Package: H-37275-4
패키지: -
Request a Quote
2.4GHz
15dB
28 V
-
-
850 mA
68W
65 V
H-37275-4
H-37275-4
BCP080C
BeRex Inc

RF MOSFET PHEMT FET 8V DIE

  • Transistor Type: pHEMT FET
  • Frequency: 6GHz ~ 18GHz
  • Gain: 11dB
  • Voltage - Test: 8 V
  • Current Rating: 325mA
  • Noise Figure: -
  • Current - Test: 120 mA
  • Power - Output: 28.5dBm
  • Voltage - Rated: 12 V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
6GHz ~ 18GHz
11dB
8 V
325mA
-
120 mA
28.5dBm
12 V
Die
Die
GTRB226002FC-V1-R2
MACOM Technology Solutions

RF MOSFET HEMT H-37248C-4

  • Transistor Type: HEMT
  • Frequency: 2.11GHz ~ 2.2GHz
  • Gain: 15dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 450W
  • Voltage - Rated: 48 V
  • Package / Case: H-37248C-4
  • Supplier Device Package: H-37248C-4
패키지: -
Request a Quote
2.11GHz ~ 2.2GHz
15dB
-
-
-
-
450W
48 V
H-37248C-4
H-37248C-4
CGH40120P
MACOM Technology Solutions

RF MOSFET HEMT 28V 440206

  • Transistor Type: HEMT
  • Frequency: 2.5GHz
  • Gain: 15.5dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1 A
  • Power - Output: 120W
  • Voltage - Rated: 120 V
  • Package / Case: 440206
  • Supplier Device Package: 440206
패키지: -
Request a Quote
2.5GHz
15.5dB
28 V
-
-
1 A
120W
120 V
440206
440206
PTFA080551E-V4-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-36265-2

  • Transistor Type: LDMOS
  • Frequency: 869MHz ~ 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 450 mA
  • Power - Output: 55W
  • Voltage - Rated: 65 V
  • Package / Case: H-36265-2
  • Supplier Device Package: H-36265-2
패키지: -
Request a Quote
869MHz ~ 960MHz
18.5dB
28 V
10µA
-
450 mA
55W
65 V
H-36265-2
H-36265-2
SFT1307-TL-E
onsemi

RF MOSFET 4V

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
BLC10G18XS-551AVTZ
Ampleon USA Inc.

RF MOSFET LDMOS 32V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 16.1dB
  • Voltage - Test: 32 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 750 mA
  • Power - Output: 550W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
패키지: -
Request a Quote
1.805GHz ~ 1.88GHz
16.1dB
32 V
2.8µA
-
750 mA
550W
65 V
SOT-1258-4
SOT1258-4
WPGM0206012
WAVEPIA.,Co.Ltd

RF MOSFET GAN 48V DIE 2PCS/PK

  • Transistor Type: GaN
  • Frequency: 2GHz ~ 6GHz
  • Gain: 9.6dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 610 mA
  • Power - Output: 41dBm
  • Voltage - Rated: 50 V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
재고12
2GHz ~ 6GHz
9.6dB
48 V
-
-
610 mA
41dBm
50 V
Die
Die
A3T18H408W24SR3
NXP

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
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