페이지 29 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  29/138
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설명
패키지
재고
수량
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFB191501FV1R250XTMA1
Infineon Technologies

FET RF LDMOS 150W H37248-2

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 18dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37248-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고3,552
1.99GHz
18dB
30V
-
-
1.2A
150W
65V
2-Flatpack, Fin Leads, Flanged
H-37248-2
PTFA092201E V1
Infineon Technologies

FET RF 65V 960MHZ H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.85A
  • Power - Output: 220W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36260-2
패키지: 2-Flatpack, Fin Leads
재고4,640
960MHz
18.5dB
30V
10µA
-
1.85A
220W
65V
2-Flatpack, Fin Leads
H-36260-2
BG3130E6327HTSA1
Infineon Technologies

MOSFET N-CH DUAL 8V SOT-363

  • Transistor Type: 2 N-Channel (Dual)
  • Frequency: 800MHz
  • Gain: 24dB
  • Voltage - Test: 5V
  • Current Rating: 25mA
  • Noise Figure: 1.3dB
  • Current - Test: 14mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
패키지: 6-VSSOP, SC-88, SOT-363
재고7,264
800MHz
24dB
5V
25mA
1.3dB
14mA
-
8V
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
MAGX-001214-125L00
M/A-Com Technology Solutions

TRANSISTOR GAN 125W 1.2-1.4GHZ

  • Transistor Type: HEMT
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 18.4dB
  • Voltage - Test: 50V
  • Current Rating: 4.8A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 125W
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,912
1.2GHz ~ 1.4GHz
18.4dB
50V
4.8A
-
100mA
125W
65V
-
-
hot NE5550979A-T1-A
CEL

FET RF 30V 900MHZ 79A-PKG

  • Transistor Type: LDMOS
  • Frequency: 900MHz
  • Gain: 22dB
  • Voltage - Test: 7.5V
  • Current Rating: 3A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 38.6dBm
  • Voltage - Rated: 30V
  • Package / Case: 79A
  • Supplier Device Package: 79A
패키지: 79A
재고333,408
900MHz
22dB
7.5V
3A
-
200mA
38.6dBm
30V
79A
79A
MRF8HP21080HR5
NXP

FET RF 2CH 65V 2.17GHZ NI780-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.17GHz
  • Gain: 14.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 16W
  • Voltage - Rated: 65V
  • Package / Case: NI-780-4
  • Supplier Device Package: NI-780-4
패키지: NI-780-4
재고5,968
2.17GHz
14.4dB
28V
-
-
150mA
16W
65V
NI-780-4
NI-780-4
MRF6V4300NR1
NXP

FET RF 110V 450MHZ TO-270-4

  • Transistor Type: LDMOS
  • Frequency: 450MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 300W
  • Voltage - Rated: 110V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
패키지: TO-270AB
재고6,992
450MHz
22dB
50V
-
-
900mA
300W
110V
TO-270AB
TO-270 WB-4
MRFE6S9201HSR5
NXP

FET RF 66V 880MHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 20.8dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 40W
  • Voltage - Rated: 66V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고3,216
880MHz
20.8dB
28V
-
-
1.4A
40W
66V
NI-780S
NI-780S
hot MRF7S38075HSR3
NXP

FET RF 65V 3.6GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 14dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 12W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고7,620
3.4GHz ~ 3.6GHz
14dB
30V
-
-
900mA
12W
65V
NI-780S
NI-780S
PD55025
STMicroelectronics

FET RF 40V 500MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 14.5dB
  • Voltage - Test: 12.5V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 25W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: 10-PowerSO
패키지: PowerSO-10 Exposed Bottom Pad
재고3,248
500MHz
14.5dB
12.5V
7A
-
200mA
25W
40V
PowerSO-10 Exposed Bottom Pad
10-PowerSO
hot MRF374A
NXP

FET RF 70V 863MHZ NI-650

  • Transistor Type: LDMOS
  • Frequency: 857MHz ~ 863MHz
  • Gain: 17.3dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 130W
  • Voltage - Rated: 70V
  • Package / Case: NI-650
  • Supplier Device Package: NI-650
패키지: NI-650
재고6,208
857MHz ~ 863MHz
17.3dB
32V
-
-
400mA
130W
70V
NI-650
NI-650
hot MRF6P23190HR5
NXP

FET RF 68V 2.39GHZ NI-1230

  • Transistor Type: LDMOS
  • Frequency: 2.39GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.9A
  • Power - Output: 40W
  • Voltage - Rated: 68V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
패키지: NI-1230
재고3,664
2.39GHz
14dB
28V
-
-
1.9A
40W
68V
NI-1230
NI-1230
hot NE3503M04-T2-A
CEL

FET RF 4V 12GHZ M04

  • Transistor Type: HFET
  • Frequency: 12GHz
  • Gain: 12dB
  • Voltage - Test: 2V
  • Current Rating: 70mA
  • Noise Figure: 0.45dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 4V
  • Package / Case: SOT-343F
  • Supplier Device Package: M04
패키지: SOT-343F
재고4,469,856
12GHz
12dB
2V
70mA
0.45dB
10mA
-
4V
SOT-343F
M04
PTFB193404FV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 19dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.6A
  • Power - Output: 80W
  • Voltage - Rated: 65V
  • Package / Case: H-37275-6/2
  • Supplier Device Package: H-37275-6/2
패키지: H-37275-6/2
재고2,816
1.99GHz
19dB
30V
-
-
2.6A
80W
65V
H-37275-6/2
H-37275-6/2
PTAC240502FCV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,112
-
-
-
-
-
-
-
-
-
-
MMRF1005HSR5
NXP

FET RF 120V 1.3GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 1.3GHz
  • Gain: 22.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 250W
  • Voltage - Rated: 120V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
패키지: NI-780S
재고6,144
1.3GHz
22.7dB
50V
-
-
100mA
250W
120V
NI-780S
NI-780S
BLC9G20XS-550AVT
Ampleon USA Inc.

RF FET LDMOS 65V 15.4DB SOT12587

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 15.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 580W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1258-7
  • Supplier Device Package: SOT-1258-7
패키지: SOT-1258-7
재고2,304
1.81GHz ~ 1.88GHz
15.4dB
28V
-
-
1.1A
580W
65V
SOT-1258-7
SOT-1258-7
A2T18S160W31GSR3
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz
  • Gain: 19.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 32W
  • Voltage - Rated: 65V
  • Package / Case: NI-780GS-2L2LA
  • Supplier Device Package: NI-780GS-2L2LA
패키지: NI-780GS-2L2LA
재고6,240
1.88GHz
19.9dB
28V
-
-
1A
32W
65V
NI-780GS-2L2LA
NI-780GS-2L2LA
MRF8P20100HSR3
NXP

FET RF 2CH 65V 2.03GHZ NI780H-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.03GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 20W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
패키지: NI-780S-4
재고7,232
2.03GHz
16dB
28V
-
-
400mA
20W
65V
NI-780S-4
NI-780S-4
hot NE3515S02-T1C-A
CEL

FET RF HFET 12GHZ 2V 10MA S02

  • Transistor Type: HFET
  • Frequency: 12GHz
  • Gain: 12.5dB
  • Voltage - Test: 2V
  • Current Rating: 88mA
  • Noise Figure: 0.3dB
  • Current - Test: 10mA
  • Power - Output: 14dBm
  • Voltage - Rated: 4V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: S02
패키지: 4-SMD, Flat Leads
재고362,196
12GHz
12.5dB
2V
88mA
0.3dB
10mA
14dBm
4V
4-SMD, Flat Leads
S02
hot MRF6VP2600HR5
NXP

FET RF 2CH 110V 225MHZ NI-1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 225MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.6A
  • Power - Output: 125W
  • Voltage - Rated: 110V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
패키지: NI-1230
재고3,840
225MHz
25dB
50V
-
-
2.6A
125W
110V
NI-1230
NI-1230
LET9060F
STMicroelectronics

MOSFET N-CH 80V 12A M-250

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 12A
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 75W
  • Voltage - Rated: 80V
  • Package / Case: M250
  • Supplier Device Package: M250
패키지: M250
재고6,912
945MHz
18dB
28V
12A
-
400mA
75W
80V
M250
M250
275-102N06A-00
IXYS

RF MOSFET N-CHANNEL DE275

  • Transistor Type: N-Channel
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 590W
  • Voltage - Rated: 1000V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: DE275
패키지: 6-SMD, Flat Lead Exposed Pad
재고5,616
100MHz
-
-
1mA
-
-
590W
1000V
6-SMD, Flat Lead Exposed Pad
DE275
hot MRFE6VS25LR5
NXP

FET RF 133V 512MHZ NI360L

  • Transistor Type: LDMOS
  • Frequency: 512MHz
  • Gain: 25.9dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: 25W
  • Voltage - Rated: 133V
  • Package / Case: NI-360
  • Supplier Device Package: NI-360
패키지: NI-360
재고5,104
512MHz
25.9dB
50V
-
-
10mA
25W
133V
NI-360
NI-360
DE275-102N06A
IXYS-RF

RF MOSFET DE275

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 8A
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 590W
  • Voltage - Rated: 1000 V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: DE275
패키지: -
Request a Quote
-
-
-
8A
-
-
590W
1000 V
6-SMD, Flat Lead Exposed Pad
DE275
A2T18S166W12SR3
NXP

RF MOSFET LDMOS NI780

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.995GHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 38W
  • Voltage - Rated: 28 V
  • Package / Case: NI-780-2S2L
  • Supplier Device Package: NI-780-2S2L
패키지: -
Request a Quote
1.805GHz ~ 1.995GHz
-
-
-
-
-
38W
28 V
NI-780-2S2L
NI-780-2S2L
PXAC180602MD-V1-R500
MACOM Technology Solutions

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
CG2H80120D-GP4
MACOM Technology Solutions

RF MOSFET HEMT 28V DIE

  • Transistor Type: HEMT
  • Frequency: 8GHz
  • Gain: 12dB
  • Voltage - Test: 28 V
  • Current Rating: 28A
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 120W
  • Voltage - Rated: 84 V
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
재고120
8GHz
12dB
28 V
28A
-
-
120W
84 V
Die
Die