페이지 49 - 트랜지스터 - FET, MOSFET - RF | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - RF

기록 3,855
페이지  49/138
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설명
패키지
재고
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Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA210701FV4R250XTMA1
Infineon Technologies

IC FET RF LDMOS 70W H-37265-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 16.5dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 550mA
  • Power - Output: 18W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37265-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고7,488
2.14GHz
16.5dB
30V
10µA
-
550mA
18W
65V
2-Flatpack, Fin Leads, Flanged
H-37265-2
BLC8G24LS-240AVU
NXP

TRANS RF 240W 65V LDMOS SOT1252

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 15dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 63W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1252-1
  • Supplier Device Package: SOT1252-1
패키지: SOT-1252-1
재고2,656
2.3GHz ~ 2.4GHz
15dB
30V
-
-
800mA
63W
65V
SOT-1252-1
SOT1252-1
MAGX-000912-125L00
M/A-Com Technology Solutions

TRANSISTOR GAN 125W 960-1215MHZ

  • Transistor Type: HEMT
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 18.9dB
  • Voltage - Test: 50V
  • Current Rating: 4A
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 125W
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,536
960MHz ~ 1.215GHz
18.9dB
50V
4A
-
100mA
125W
65V
-
-
BLF7G20L-200,118
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.62A
  • Power - Output: 55W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
패키지: SOT-502A
재고2,768
1.81GHz ~ 1.88GHz
18dB
28V
-
-
1.62A
55W
65V
SOT-502A
LDMOST
ON5449,518
NXP

MOSFET RF 64QFP

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,784
-
-
-
-
-
-
-
-
-
-
ON5252,118
NXP

MOSFET RF SOT428DPAK

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,656
-
-
-
-
-
-
-
-
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
PD57030S
STMicroelectronics

FET RF 65V 945MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 4A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: 10-PowerSO
패키지: PowerSO-10 Exposed Bottom Pad
재고4,496
945MHz
14dB
28V
4A
-
50mA
30W
65V
PowerSO-10 Exposed Bottom Pad
10-PowerSO
PD55008STR-E
STMicroelectronics

FET RF 40V 500MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 17dB
  • Voltage - Test: 12.5V
  • Current Rating: 4A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 8W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
패키지: PowerSO-10 Exposed Bottom Pad
재고2,320
500MHz
17dB
12.5V
4A
-
150mA
8W
40V
PowerSO-10 Exposed Bottom Pad
PowerSO-10RF (Straight Lead)
MRF19085LR5
NXP

FET RF 65V 1.99GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 13dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 850mA
  • Power - Output: 18W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고6,512
1.93GHz ~ 1.99GHz
13dB
26V
-
-
850mA
18W
65V
NI-780
NI-780
MRF5S19090HR5
NXP

FET RF 65V 1.99GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 850mA
  • Power - Output: 18W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
패키지: NI-780
재고4,240
1.93GHz ~ 1.99GHz
14.5dB
28V
-
-
850mA
18W
65V
NI-780
NI-780
BF1211R,215
NXP

MOSFET N-CH DUAL GATE 6V SOT143R

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 400MHz
  • Gain: 29dB
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 0.9dB
  • Current - Test: 15mA
  • Power - Output: -
  • Voltage - Rated: 6V
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
패키지: SOT-143R
재고3,280
400MHz
29dB
5V
30mA
0.9dB
15mA
-
6V
SOT-143R
SOT-143R
BLF548,112
Ampleon USA Inc.

RF FET 2 NC 65V 11DB SOT262A2

  • Transistor Type: 2 N-Channel (Dual) Common Source
  • Frequency: 500MHz
  • Gain: 11dB
  • Voltage - Test: 28V
  • Current Rating: 15A
  • Noise Figure: -
  • Current - Test: 160mA
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: SOT-262A2
  • Supplier Device Package: CDFM4
패키지: SOT-262A2
재고3,712
500MHz
11dB
28V
15A
-
160mA
150W
65V
SOT-262A2
CDFM4
BF1204,115
NXP

FET RF 10V 400MHZ 6TSSOP

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 400MHz
  • Gain: 30dB
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 0.9dB
  • Current - Test: 12mA
  • Power - Output: -
  • Voltage - Rated: 10V
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: 6-TSSOP, SC-88, SOT-363
재고6,336
400MHz
30dB
5V
30mA
0.9dB
12mA
-
10V
6-TSSOP, SC-88, SOT-363
6-TSSOP
PTFB211803FLV2R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 17.5dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: H-34288-4/2
  • Supplier Device Package: H-34288-4/2
패키지: H-34288-4/2
재고2,544
2.17GHz
17.5dB
30V
-
-
1.3A
40W
65V
H-34288-4/2
H-34288-4/2
BLF988S,112
Ampleon USA Inc.

RF FET LDMOS 110V 20.8DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 860MHz
  • Gain: 20.8dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 250W
  • Voltage - Rated: 110V
  • Package / Case: SOT539B
  • Supplier Device Package: LDMOST
패키지: SOT539B
재고3,552
860MHz
20.8dB
50V
-
-
1.3A
250W
110V
SOT539B
LDMOST
MRFE6VP61K25HSR5
NXP

FET RF 2CH 133V 230MHZ NI-1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 24dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1250W
  • Voltage - Rated: 133V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
패키지: NI-1230S
재고6,320
230MHz
24dB
50V
-
-
100mA
1250W
133V
NI-1230S
NI-1230S
BLF8G22LS-200V,112
Ampleon USA Inc.

RF FET LDMOS 65V 19DB SOT1244B

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 19dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 55W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244B
  • Supplier Device Package: CDFM6
패키지: SOT-1244B
재고3,440
2.11GHz ~ 2.17GHz
19dB
28V
-
-
2A
55W
65V
SOT-1244B
CDFM6
MMRF1015NR1
NXP

FET RF 68V 960MHZ TO270

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 125mA
  • Power - Output: 10W
  • Voltage - Rated: 68V
  • Package / Case: TO-270-2
  • Supplier Device Package: TO-270-2
패키지: TO-270-2
재고5,616
960MHz
18dB
28V
-
-
125mA
10W
68V
TO-270-2
TO-270-2
BLC9G22XS-400AVTZ
Ampleon USA Inc.

RF FET LDMOS 65V 15.3DB SOT12587

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.2GHz
  • Gain: 15.3dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 810mA
  • Power - Output: 580W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1258-7
  • Supplier Device Package: -
패키지: SOT-1258-7
재고6,240
2.11GHz ~ 2.2GHz
15.3dB
32V
-
-
810mA
580W
65V
SOT-1258-7
-
hot MRF1517NT1
NXP

FET RF 25V 520MHZ PLD-1.5

  • Transistor Type: LDMOS
  • Frequency: 520MHz
  • Gain: 14dB
  • Voltage - Test: 7.5V
  • Current Rating: 4A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 8W
  • Voltage - Rated: 25V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
패키지: PLD-1.5
재고8,940
520MHz
14dB
7.5V
4A
-
150mA
8W
25V
PLD-1.5
PLD-1.5
ART150PEGY
Ampleon USA Inc.

RF MOSFET LDMOS SOT12242

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PXAC210552FC-V1-R2
MACOM Technology Solutions

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
A5G38H055NT4
NXP

RF MOSFET GAN 48V 6DFN

  • Transistor Type: GaN
  • Frequency: 3.7GHz ~ 3.98GHz
  • Gain: 15dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 45 mA
  • Power - Output: 7.6W
  • Voltage - Rated: 125 V
  • Package / Case: 6-LDFN Exposed Pad
  • Supplier Device Package: 6-PDFN (7x6.5)
패키지: -
Request a Quote
3.7GHz ~ 3.98GHz
15dB
48 V
-
-
45 mA
7.6W
125 V
6-LDFN Exposed Pad
6-PDFN (7x6.5)
2N5245_L99Z
onsemi

RF MOSFET JFET 30V TO92-3

  • Transistor Type: JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 15mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30 V
  • Package / Case: -
  • Supplier Device Package: TO-92-3
패키지: -
Request a Quote
-
-
-
15mA
-
-
-
30 V
-
TO-92-3
IGT1112M90
Integra Technologies Inc.

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
BLF0910H9LS750PJ
Ampleon USA Inc.

RF MOSFET LDMOS 50V SOT539B

  • Transistor Type: LDMOS
  • Frequency: 915MHz
  • Gain: 21.5dB
  • Voltage - Test: 50 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 250 mA
  • Power - Output: 750W
  • Voltage - Rated: 108 V
  • Package / Case: SOT-539B
  • Supplier Device Package: SOT539B
패키지: -
재고300
915MHz
21.5dB
50 V
2.8µA
-
250 mA
750W
108 V
SOT-539B
SOT539B
A3G20S250-01SR3
NXP

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
ART2K5TPUY
Ampleon USA Inc.

ART2K5TPU/OMP-1230-6F/T&R

  • Transistor Type: LDMOS
  • Frequency: 1MHz ~ 400MHz
  • Gain: 28.5dB
  • Voltage - Test: 75 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 600 mA
  • Power - Output: 2500W
  • Voltage - Rated: 200 V
  • Package / Case: OMP-1230-6F-2
  • Supplier Device Package: OMP-1230-6F-2
패키지: -
Request a Quote
1MHz ~ 400MHz
28.5dB
75 V
2.8µA
-
600 mA
2500W
200 V
OMP-1230-6F-2
OMP-1230-6F-2