페이지 1025 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  1,025/1,502
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설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPD100N06S403ATMA1
Infineon Technologies

MOSFET N-CH 60V 100A TO252-3-11

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-11
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,440
MOSFET (Metal Oxide)
60V
100A (Tc)
10V
4V @ 90µA
128nC @ 10V
10400pF @ 25V
±20V
-
150W (Tc)
3.5 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-11
TO-252-3, DPak (2 Leads + Tab), SC-63
IPI12CN10N G
Infineon Technologies

MOSFET N-CH 100V 67A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 83µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고2,048
MOSFET (Metal Oxide)
100V
67A (Tc)
10V
4V @ 83µA
65nC @ 10V
4320pF @ 50V
±20V
-
125W (Tc)
12.9 mOhm @ 67A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2Pak, TO-262AA
hot SPP42N03S2L-13
Infineon Technologies

MOSFET N-CH 30V 42A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 37µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
패키지: TO-220-3
재고897,840
MOSFET (Metal Oxide)
30V
42A (Tc)
4.5V, 10V
2V @ 37µA
30.5nC @ 10V
1130pF @ 25V
±20V
-
83W (Tc)
12.9 mOhm @ 21A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
hot AOD474
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 75V 10A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 37.5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 28.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,440
MOSFET (Metal Oxide)
75V
2.5A (Ta), 10A (Tc)
4.5V, 10V
2.4V @ 250µA
9nC @ 10V
280pF @ 37.5V
±20V
-
2.1W (Ta), 28.5W (Tc)
130 mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD4913NT4G
ON Semiconductor

MOSFET N-CH 30V 32A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1013pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.36W (Ta), 24W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고121,020
MOSFET (Metal Oxide)
30V
7.7A (Ta), 32A (Tc)
4.5V, 10V
2.2V @ 250µA
13nC @ 10V
1013pF @ 15V
±20V
-
1.36W (Ta), 24W (Tc)
10.5 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot ISL9N302AP3
Fairchild/ON Semiconductor

MOSFET N-CH 30V 75A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 345W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고8,160
MOSFET (Metal Oxide)
30V
75A (Tc)
4.5V, 10V
3V @ 250µA
300nC @ 10V
11000pF @ 15V
±20V
-
345W (Tc)
2.5 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot ZVN4310GTC
Diodes Incorporated

MOSFET N-CH 100V 1.67A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.67A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Rds On (Max) @ Id, Vgs: 540 mOhm @ 3.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
패키지: TO-261-4, TO-261AA
재고120,492
MOSFET (Metal Oxide)
100V
1.67A (Ta)
5V, 10V
3V @ 1mA
-
350pF @ 25V
±20V
-
3W (Ta)
540 mOhm @ 3.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
PHT4NQ10LT,135
NXP

MOSFET N-CH 100V 3.5A SC73

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 374pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 6.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.75A, 5V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
패키지: TO-261-4, TO-261AA
재고2,640
MOSFET (Metal Oxide)
100V
3.5A (Tc)
5V
2V @ 1mA
12.2nC @ 5V
374pF @ 25V
±16V
-
6.9W (Tc)
250 mOhm @ 1.75A, 5V
-65°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
hot STS1HNK60
STMicroelectronics

MOSFET N-CH 600V 300MA 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 500mA, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,333,724
MOSFET (Metal Oxide)
600V
300mA (Tc)
10V
3.7V @ 250µA
10nC @ 10V
156pF @ 25V
±30V
-
2W (Tc)
8.5 Ohm @ 500mA, 10V
-65°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot IRFR5410TRLPBF
Infineon Technologies

MOSFET P-CH 100V 13A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고14,460
MOSFET (Metal Oxide)
100V
13A (Tc)
10V
4V @ 250µA
58nC @ 10V
760pF @ 25V
±20V
-
66W (Tc)
205 mOhm @ 7.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
IPD65R1K4C6ATMA1
Infineon Technologies

MOSFET N-CH TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,032
MOSFET (Metal Oxide)
650V
3.2A (Tc)
10V
3.5V @ 100µA
10.5nC @ 10V
225pF @ 100V
±20V
-
28W (Tc)
1.4 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IXFH22N60P
IXYS

MOSFET N-CH 600V 22A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
패키지: TO-247-3
재고390,000
MOSFET (Metal Oxide)
600V
22A (Tc)
10V
5.5V @ 4mA
58nC @ 10V
3600pF @ 25V
±30V
-
400W (Tc)
350 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
BUK7225-55A,118
Nexperia USA Inc.

MOSFET N-CH 55V 43A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,248
MOSFET (Metal Oxide)
55V
43A (Tc)
10V
4V @ 1mA
-
1310pF @ 25V
±20V
-
94W (Tc)
25 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
FDMS3006SDC
Fairchild/ON Semiconductor

MOSFET N-CH 30V 34A 8-PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5725pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Dual Cool?56
  • Package / Case: 8-PowerTDFN
패키지: 8-PowerTDFN
재고4,032
MOSFET (Metal Oxide)
30V
34A (Ta)
4.5V, 10V
3V @ 1mA
80nC @ 10V
5725pF @ 15V
±20V
-
3.3W (Ta), 89W (Tc)
1.9 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Dual Cool?56
8-PowerTDFN
SIHP21N65EF-GE3
Vishay Siliconix

MOSFET N-CH 650V 21A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2322pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고12,804
MOSFET (Metal Oxide)
650V
21A (Tc)
10V
4V @ 250µA
106nC @ 10V
2322pF @ 100V
±20V
-
208W (Tc)
180 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot NTD6416ANT4G
ON Semiconductor

MOSFET N-CH 100V 17A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 81 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고150,300
MOSFET (Metal Oxide)
100V
17A (Tc)
10V
4V @ 250µA
20nC @ 10V
620pF @ 25V
±20V
-
71W (Tc)
81 mOhm @ 17A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
RSR025P03HZGTL
Rohm Semiconductor

MOSFET P-CH 30V 2.5A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
패키지: -
재고33,390
MOSFET (Metal Oxide)
30 V
2.5A (Ta)
4V, 10V
2.5V @ 1mA
5.4 nC @ 5 V
460 pF @ 10 V
±20V
-
700mW (Ta)
98mOhm @ 2.5A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
SPS04N60C3E8177AKMA1
Infineon Technologies

LOW POWER_LEGACY

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
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ATP102-TL-H
onsemi

MOSFET P-CH 30V 40A ATPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ATPAK
  • Package / Case: ATPAK (2 Leads+Tab)
패키지: -
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MOSFET (Metal Oxide)
30 V
40A (Ta)
4.5V, 10V
-
34 nC @ 10 V
1490 pF @ 10 V
±20V
-
40W (Tc)
18.5mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
ATPAK
ATPAK (2 Leads+Tab)
DMTH8004LPS-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4979 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
패키지: -
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MOSFET (Metal Oxide)
80 V
100A (Tc)
4.5V, 10V
2.8V @ 250µA
81 nC @ 10 V
4979 pF @ 40 V
±20V
-
1.5W (Ta), 125W (Tc)
3.8mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
FCPF380N65FL1-F154
onsemi

MOSFET N-CH 650V 10.2A TO220F-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 5.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3
  • Package / Case: TO-220-3 Full Pack
패키지: -
재고2,946
MOSFET (Metal Oxide)
650 V
10.2A (Tc)
-
5V @ 1mA
43 nC @ 10 V
1680 pF @ 100 V
±20V
-
33W (Tc)
380mOhm @ 5.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F-3
TO-220-3 Full Pack
IRFS640A
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 4.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
패키지: -
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MOSFET (Metal Oxide)
200 V
9.8A (Tc)
10V
4V @ 250µA
58 nC @ 10 V
1500 pF @ 25 V
±30V
-
43W (Tc)
180mOhm @ 4.9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
AO3403-ML
MOSLEADER

P -30V -2.6A SOT23-3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
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UPA1556AH-AZ
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
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-
-
-
-
-
-
-
-
-
-
-
-
-
-
PSMN1R2-55SLHX
Nexperia USA Inc.

N-CHANNEL 55 V, 1.03 MOHM, 330 A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 375W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK88 (SOT1235)
  • Package / Case: SOT-1235
패키지: -
재고5,256
MOSFET (Metal Oxide)
55 V
330A (Ta)
4.5V, 10V
2.2V @ 1mA
395 nC @ 10 V
25773 pF @ 27 V
±20V
Schottky Diode (Isolated)
375W (Ta)
1.03mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK88 (SOT1235)
SOT-1235
DMP2045UFY4-7
Diodes Incorporated

MOSFET P-CH 20V 4.7A X2-DFN2015

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 670mW (Ta)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN2015-3
  • Package / Case: 3-XDFN
패키지: -
재고8,742
MOSFET (Metal Oxide)
20 V
4.7A (Ta)
1.5V, 4.5V
1V @ 250µA
6.8 nC @ 4.5 V
634 pF @ 10 V
±8V
-
670mW (Ta)
45mOhm @ 4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN2015-3
3-XDFN
NTMYS5D3N04CTWG
onsemi

MOSFET N-CH 40V 19A/71A 4LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.3mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK4 (5x6)
  • Package / Case: SOT-1023, 4-LFPAK
패키지: -
재고744
MOSFET (Metal Oxide)
40 V
19A (Ta), 71A (Tc)
10V
3.5V @ 40µA
16 nC @ 10 V
1000 pF @ 25 V
±20V
-
3.6W (Ta), 50W (Tc)
5.3mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK4 (5x6)
SOT-1023, 4-LFPAK
RJK0657DPA-WS-J5A
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
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