이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 100V 4.2A DIRECTFET
|
패키지: DirectFET? Isometric SH |
재고13,344 |
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MOSFET (Metal Oxide) | 100V | 4.2A (Ta), 19A (Tc) | 10V | 5V @ 250µA | 13nC @ 10V | 530pF @ 25V | ±20V | - | 2.2W (Ta), 42W (Tc) | 62 mOhm @ 5A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? SH | DirectFET? Isometric SH |
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STMicroelectronics |
MOSFET N-CH 1KV 3A TO-220
|
패키지: TO-220-3 |
재고74,712 |
|
MOSFET (Metal Oxide) | 1000V | 3A (Tc) | 10V | 4V @ 250µA | 30nC @ 10V | 700pF @ 25V | ±30V | - | 100W (Tc) | 6 Ohm @ 1.5A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 6.2A TO-252
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고5,424 |
|
MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 3.9V @ 260µA | 31nC @ 10V | 620pF @ 25V | ±20V | - | 74W (Tc) | 750 mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-1 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 17A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고3,440 |
|
MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 2V @ 250µA | 34nC @ 5V | 800pF @ 25V | ±20V | - | 3.8W (Ta), 79W (Tc) | 100 mOhm @ 9A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
TRANSISTOR P-CH BARE DIE
|
패키지: - |
재고2,624 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
MOSFET N-CH 1200V 22A T-MAX
|
패키지: TO-247-3 Variant |
재고4,176 |
|
MOSFET (Metal Oxide) | 1200V | 22A (Tc) | 10V | 5V @ 2.5mA | 185nC @ 10V | 5155pF @ 25V | ±30V | - | 690W (Tc) | 570 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
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ON Semiconductor |
MOSFET P-CH 60V 14A U8FL
|
패키지: 8-PowerWDFN |
재고6,024 |
|
MOSFET (Metal Oxide) | 60V | 6A (Ta) | 4.5V, 10V | 3V @ 250µA | 25nC @ 10V | 1258pF @ 25V | ±20V | - | 3.2W (Ta), 21W (Tc) | 52 mOhm @ 7A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-263-3
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고6,896 |
|
MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | ±20V | - | 63W (Tc) | 225 mOhm @ 4.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 30V 13.7A SO-8FL
|
패키지: 8-PowerTDFN, 5 Leads |
재고22,728 |
|
MOSFET (Metal Oxide) | 30V | 13.7A (Ta), 115A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 62nC @ 11.5V | 3720pF @ 12V | ±16V | - | 890mW (Ta), 62.5W (Tc) | 2.9 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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IXYS |
MOSFET N-CH 200V 120A SOT-227B
|
패키지: SOT-227-4, miniBLOC |
재고4,624 |
|
MOSFET (Metal Oxide) | 200V | 120A | 10V | 4V @ 8mA | 360nC @ 10V | 9100pF @ 25V | ±20V | - | 600W (Tc) | 17 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Microchip Technology |
MOSFET N-CH 60V 300MA TO92-3
|
패키지: TO-226-3, TO-92-3 (TO-226AA) |
재고18,828 |
|
MOSFET (Metal Oxide) | 60V | 300mA (Tj) | 4.5V, 10V | 2V @ 1mA | - | 50pF @ 25V | ±20V | - | 740mW (Tc) | 2.5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고34,800 |
|
MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4V, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | ±16V | - | 110W (Tc) | 27 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
N-CHANNEL 1700 V, 7 OHM TYP., 2.
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패키지: TO-247-3 |
재고9,840 |
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MOSFET (Metal Oxide) | 1700V | 2.6A (Tc) | 10V | 5V @ 250µA | 44nC @ 10V | 1100pF @ 100V | ±30V | - | 160mW | 13 Ohm @ 1.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 10A TO-220FP
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패키지: TO-220-3 Full Pack |
재고110,964 |
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MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 540pF @ 50V | ±25V | - | 25W (Tc) | 550 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 200V 20A TO-247AC
|
패키지: TO-247-3 |
재고56,496 |
|
MOSFET (Metal Oxide) | 200V | 20A (Tc) | 10V | 4V @ 250µA | 70nC @ 10V | 1300pF @ 25V | ±20V | - | 150W (Tc) | 180 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 1A SOT23
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패키지: TO-236-3, SC-59, SOT-23-3 |
재고318,624 |
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MOSFET (Metal Oxide) | 100V | 1A (Ta) | 4.5V, 10V | 2.9V @ 250µA | 6nC @ 10V | 100pF @ 50V | ±20V | - | 1.4W (Ta) | 630 mOhm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |
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MOSLEADER |
P -30V SOT-23
|
패키지: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
MOSFET N-CH 60V 1.5A TUMT3
|
패키지: - |
재고21,588 |
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MOSFET (Metal Oxide) | 60 V | 1.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 2 nC @ 5 V | 110 pF @ 10 V | ±20V | - | 800mW (Ta) | 290mOhm @ 1.5A, 10V | 150°C | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
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onsemi |
-30V P-CHANNEL POWERTRENCH MOSFE
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 5.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 14 nC @ 10 V | 528 pF @ 15 V | ±25V | - | 1W (Ta) | 50mOhm @ 5.3A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Harris Corporation |
P-CHANNEL POWER MOSFET
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 15A (Tc) | 10V | 4V @ 250µA | 90 nC @ 10 V | 1100 pF @ 25 V | ±20V | - | 150W (Tc) | 300mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 3.5A (Ta) | 10V | 4V @ 350µA | 13 nC @ 10 V | 450 pF @ 300 V | ±30V | - | 30W (Tc) | 2.2Ohm @ 1.8A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
UMOS10 TO-220AB 80V 7MOHM
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패키지: - |
재고360 |
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MOSFET (Metal Oxide) | 80 V | 64A (Tc) | 6V, 10V | 3.5V @ 500µA | 39 nC @ 10 V | 2700 pF @ 40 V | ±20V | - | 87W (Tc) | 7mOhm @ 32A, 10V | 175°C | Through Hole | TO-220 | TO-220-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 25A POWERDI3333
|
패키지: - |
재고15,000 |
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MOSFET (Metal Oxide) | 30 V | 25A (Tc) | 4.5V, 10V | 2V @ 250µA | 9.8 nC @ 10 V | 500 pF @ 15 V | ±20V | - | 900mW (Ta) | 18mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 (Type UX) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 800V 12A TO247AC
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | 12A (Tc) | 10V | 4V @ 250µA | 88 nC @ 10 V | 1670 pF @ 100 V | ±30V | - | 179W (Tc) | 440mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 13.8A TO247-3
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 13.8A (Tc) | 10V | 3.5V @ 430µA | 43 nC @ 10 V | 950 pF @ 100 V | ±20V | - | 104W (Tc) | 280mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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Wolfspeed, Inc. |
SICFET N-CH 900V 73A TO247-4
|
패키지: - |
재고6,570 |
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SiCFET (Silicon Carbide) | 900 V | 73A (Tc) | 15V | 3.5V @ 11mA | 74 nC @ 15 V | 1503 pF @ 600 V | +15V, -4V | - | 240W (Tc) | 39mOhm @ 35A, 15V | -40°C ~ 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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onsemi |
MOSFET N-CH
|
패키지: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 600V 12A TO263
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 4V @ 250µA | 58 nC @ 10 V | 937 pF @ 100 V | ±30V | - | 147W (Tc) | 380mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |