페이지 1082 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  1,082/1,502
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설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
APTM100U13SG
Microsemi Corporation

MOSFET N-CH 1000V 65A J3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 65A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 2000nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 31600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 145 mOhm @ 32.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: Module
  • Package / Case: J3 Module
패키지: J3 Module
재고3,776
MOSFET (Metal Oxide)
1000V
65A
10V
4V @ 10mA
2000nC @ 10V
31600pF @ 25V
±30V
-
1250W (Tc)
145 mOhm @ 32.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
Module
J3 Module
hot FQAF34N25
Fairchild/ON Semiconductor

MOSFET N-CH 250V 21.7A TO-3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 21.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2750pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 10.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: SC-94
패키지: SC-94
재고12,720
MOSFET (Metal Oxide)
250V
21.7A (Tc)
10V
5V @ 250µA
80nC @ 10V
2750pF @ 25V
±30V
-
100W (Tc)
85 mOhm @ 10.9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PF
SC-94
HUF76629D3
Fairchild/ON Semiconductor

MOSFET N-CH 100V 20A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1285pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251AA
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고7,904
MOSFET (Metal Oxide)
100V
20A (Tc)
4.5V, 10V
3V @ 250µA
46nC @ 10V
1285pF @ 25V
±16V
-
110W (Tc)
52 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-251AA
TO-251-3 Short Leads, IPak, TO-251AA
hot FQPF28N15
Fairchild/ON Semiconductor

MOSFET N-CH 150V 16.7A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 8.35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고19,704
MOSFET (Metal Oxide)
150V
16.7A (Tc)
10V
4V @ 250µA
52nC @ 10V
1600pF @ 25V
±25V
-
60W (Tc)
90 mOhm @ 8.35A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
FQB7N20LTM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 6.5A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.13W (Ta), 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,296
MOSFET (Metal Oxide)
200V
6.5A (Tc)
5V, 10V
2V @ 250µA
9nC @ 5V
500pF @ 25V
±20V
-
3.13W (Ta), 63W (Tc)
750 mOhm @ 3.25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA76409D3S
Fairchild/ON Semiconductor

MOSFET N-CH 60V 18A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 49W (Tc)
  • Rds On (Max) @ Id, Vgs: 63 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,360
MOSFET (Metal Oxide)
60V
18A (Tc)
4.5V, 10V
3V @ 250µA
15nC @ 10V
485pF @ 25V
±16V
-
49W (Tc)
63 mOhm @ 18A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
hot MTP10N10ELG
ON Semiconductor

MOSFET N-CH 100V 10A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 5A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고390,000
MOSFET (Metal Oxide)
100V
10A (Tc)
5V
2V @ 250µA
15nC @ 5V
1040pF @ 25V
±15V
-
1.75W (Ta), 40W (Tc)
220 mOhm @ 5A, 5V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot STP11NM60N
STMicroelectronics

MOSFET N-CH 600V 10A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고273,840
MOSFET (Metal Oxide)
600V
10A (Tc)
10V
4V @ 250µA
31nC @ 10V
850pF @ 50V
±25V
-
90W (Tc)
450 mOhm @ 5A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPI180N10N3GXKSA1
Infineon Technologies

MOSFET N-CH 100V 43A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 33µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 33A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고3,968
MOSFET (Metal Oxide)
100V
43A (Tc)
6V, 10V
3.5V @ 33µA
25nC @ 10V
1800pF @ 50V
±20V
-
71W (Tc)
18 mOhm @ 33A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2Pak, TO-262AA
hot IRF7201PBF
Infineon Technologies

MOSFET N-CH 30V 7.3A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고531,876
MOSFET (Metal Oxide)
30V
7.3A (Tc)
4.5V, 10V
1V @ 250µA
28nC @ 10V
550pF @ 25V
±20V
-
2.5W (Tc)
30 mOhm @ 7.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot NTTFS4930NTAG
ON Semiconductor

MOSFET N-CH 30V 23A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 476pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 790mW (Ta), 20.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
패키지: 8-PowerWDFN
재고66,432
MOSFET (Metal Oxide)
30V
4.5A (Ta), 23A (Tc)
4.5V, 10V
2.2V @ 250µA
5.5nC @ 4.5V
476pF @ 15V
±20V
-
790mW (Ta), 20.2W (Tc)
23 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
SIR680DP-T1-RE3
Vishay Siliconix

MOSFET N-CH 80V 100A SO8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 3.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 7.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
패키지: PowerPAK? SO-8
재고4,224
MOSFET (Metal Oxide)
80V
100A (Tc)
7.5V, 10V
3.4V @ 250µA
81nC @ 7.5V
5150pF @ 40V
±20V
-
104W (Tc)
2.9 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
STL60P4LLF6
STMicroelectronics

MOSFET P-CH 40V 60A 8POWERFLAT

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3525pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 6.5A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
패키지: 8-PowerSMD, Flat Leads
재고3,040
MOSFET (Metal Oxide)
40V
60A (Tc)
4.5V, 10V
1V @ 250µA (Min)
34nC @ 4.5V
3525pF @ 25V
±20V
-
100W (Tc)
14 mOhm @ 6.5A, 10V
175°C (TJ)
Surface Mount
PowerFlat? (5x6)
8-PowerSMD, Flat Leads
SPP16N50C3XKSA1
Infineon Technologies

MOSFET N-CH 560V 16A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 560V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 675µA
  • Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고6,816
MOSFET (Metal Oxide)
560V
16A (Tc)
10V
3.9V @ 675µA
66nC @ 10V
1600pF @ 25V
±20V
-
160W (Tc)
280 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack
PMN30UNX
Nexperia USA Inc.

MOSFET N-CH 20V SC-74

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
패키지: SC-74, SOT-457
재고7,120
MOSFET (Metal Oxide)
30V
4.5A (Ta)
1.5V, 4.5V
900mV @ 250µA
12nC @ 4.5V
635pF @ 15V
±12V
-
530mW (Ta), 4.46W (Tc)
40 mOhm @ 4.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SC-74, SOT-457
FQU2N90TU_AM002
Fairchild/ON Semiconductor

MOSFET N-CH 900V 1.7A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2 Ohm @ 850mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고14,574
MOSFET (Metal Oxide)
900V
1.7A (Tc)
10V
5V @ 250µA
15nC @ 10V
500pF @ 25V
±30V
-
2.5W (Ta), 50W (Tc)
7.2 Ohm @ 850mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot IRLR8726TRPBF
Infineon Technologies

MOSFET N-CH 30V 86A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고29,388
MOSFET (Metal Oxide)
30V
86A (Tc)
4.5V, 10V
2.35V @ 50µA
23nC @ 4.5V
2150pF @ 15V
±20V
-
75W (Tc)
5.8 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
MTD2N40ET4
onsemi

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SI1002R-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 610MA SC75A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 15 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 220mW (Ta)
  • Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75A
  • Package / Case: SC-75A
패키지: -
Request a Quote
MOSFET (Metal Oxide)
30 V
610mA (Ta)
1.5V, 4.5V
1V @ 250µA
2 nC @ 8 V
36 pF @ 15 V
±8V
-
220mW (Ta)
560mOhm @ 500mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-75A
SC-75A
FS14KM-10A-B00
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2SK3111-Z-E1-AZ
Renesas Electronics Corporation

POWER FIELD-EFFECT TRANSISTOR

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NTMYS3D8N04CLTWG
onsemi

MOSFET N-CH 40V 22A/87A 4LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
  • Vgs (Max): 20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK4 (5x6)
  • Package / Case: SOT-1023, 4-LFPAK
패키지: -
Request a Quote
MOSFET (Metal Oxide)
40 V
22A (Ta), 87A (Tc)
4.5V, 10V
2V @ 50µA
18 nC @ 10 V
1600 pF @ 25 V
20V
-
3.6W (Ta), 55W (Tc)
3.7mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK4 (5x6)
SOT-1023, 4-LFPAK
IXTT34N65X2HV
IXYS

MOSFET N-CH 650V 34A TO268HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268HV (IXTT)
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
패키지: -
Request a Quote
MOSFET (Metal Oxide)
650 V
34A (Tc)
10V
5V @ 250µA
54 nC @ 10 V
3000 pF @ 25 V
±30V
-
540W (Tc)
96mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268HV (IXTT)
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IPDQ60T022S7AXTMA1
Infineon Technologies

AUTOMOTIVE_COOLMOS

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRF830PBF-BE3
Vishay Siliconix

MOSFET N-CH 500V 4.5A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: -
재고9,960
MOSFET (Metal Oxide)
500 V
4.5A (Tc)
10V
4V @ 250µA
38 nC @ 10 V
610 pF @ 25 V
±20V
-
74W (Tc)
1.5Ohm @ 2.7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
MCAC50N03Y-TP
Micro Commercial Co

Interface

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2989 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN5060
  • Package / Case: 8-PowerTDFN
패키지: -
Request a Quote
MOSFET (Metal Oxide)
30 V
50A (Tc)
4.5V, 10V
2V @ 250µA
26 nC @ 4.5 V
2989 pF @ 15 V
±20V
-
38W (Tc)
5.6mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DFN5060
8-PowerTDFN
R6011END3TL1
Rohm Semiconductor

MOSFET N-CH 600V 11A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 124W (Tc)
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고1,113
MOSFET (Metal Oxide)
600 V
11A (Tc)
10V
4V @ 1mA
32 nC @ 10 V
670 pF @ 25 V
±20V
-
124W (Tc)
390mOhm @ 3.8A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
PXN020-100QSJ
Nexperia USA Inc.

N-CHANNEL 100 V, 20 MOHM, STANDA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 31A
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 37W
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: MLPAK33
  • Package / Case: 8-PowerVDFN
패키지: -
재고14,664
MOSFET (Metal Oxide)
100 V
31A
-
-
13 nC @ 10 V
-
-
-
37W
-
-
Surface Mount
MLPAK33
8-PowerVDFN