트랜지스터 - FET, MOSFET - 단일

IRF7805ZPBF

Infineon Technologies

MOSFET N-CH 30V 16A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

SPA20N60C3XKSA1

Infineon Technologies

MOSFET N-CH 600V 20.7A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 34.5W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-31 Full Pack
• Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

SUD45P03-15-E3

Vishay Siliconix

MOSFET P-CH 30V TO252

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 4W (Ta), 70W (Tc)
• Rds On (Max) @ Id, Vgs: 15 mOhm @ 13A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

NTD4959NT4G

ON Semiconductor

MOSFET N-CH 30V 9A TP-FA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 11.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

FQI34P10TU

Fairchild/ON Semiconductor

MOSFET P-CH 100V 33.5A I2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 25V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 16.75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I2PAK
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

NTD50N03R

ON Semiconductor

MOSFET N-CH 25V 7.8A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V
• Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

SUD40N10-25-T4-E3

Vishay Siliconix

MOSFET N-CH 100V 40A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 136W (Tc)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

TJ20S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 20A DPAK-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 10V
• Vgs (Max): +10V, -20V
• FET Feature: -
• Power Dissipation (Max): 41W (Tc)
• Rds On (Max) @ Id, Vgs: 22.2 mOhm @ 10A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

SI3805DV-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 3.3A 6-TSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 1.1W (Ta), 1.4W (Tc)
• Rds On (Max) @ Id, Vgs: 84 mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

패키지: SOT-23-6 Thin, TSOT-23-6

2N7002KT1G

ON Semiconductor

MOSFET N-CH 60V 320MA SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 350mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

BUK7610-55AL,118

Nexperia USA Inc.

MOSFET N-CH 55V 75A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6280pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SI1400DL-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 1.6A SC-70-6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 568mW (Ta)
• Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-70-6 (SOT-363)
• Package / Case: 6-TSSOP, SC-88, SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

FQA8N90C_F109

Fairchild/ON Semiconductor

MOSFET N-CH 900V 8A TO-3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 240W (Tc)
• Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3PN
• Package / Case: TO-3P-3, SC-65-3

패키지: TO-3P-3, SC-65-3

IXTH20N50D

IXYS

MOSFET N-CH 500V 20A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
• Vgs (Max): ±30V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 400W (Tc)
• Rds On (Max) @ Id, Vgs: 330 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

패키지: TO-247-3

IRF100S201

Infineon Technologies

MOSFET N-CH 100V 192A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 441W (Tc)
• Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 115A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STP17NK40ZFP

STMicroelectronics

MOSFET N-CH 400V 15A TO-220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 250 mOhm @ 7.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

SIHA12N50E-E3

Vishay Siliconix

MOSFET N-CH 500V 10.5A TO-220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 886pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 32W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220 Full Pack
• Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

IRFH5302TRPBF

Infineon Technologies

MOSFET N-CH 30V 32A 5X6 PQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.6W (Ta), 100W (Tc)
• Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PQFN (5x6) Single Die
• Package / Case: 8-PowerVDFN

패키지: 8-PowerVDFN

SI9433BDY-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 4.5A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.3W (Ta)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

IPAN70R450P7SXKSA1

Infineon Technologies

MOSFET N-CH 700V 10A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 700 V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 120µA
• Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 22.7W (Tc)
• Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-FP
• Package / Case: TO-220-3 Full Pack

패키지: -

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IXTT12N150HV-TRL

IXYS

MOSFET N-CH 1500V 12A TO268HV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1500 V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 890W (Tc)
• Rds On (Max) @ Id, Vgs: 2.2Ohm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268HV (IXTT)
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

패키지: -

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PJQ4546VP-AU_R2_002A1

Panjit International Inc.

40V N-CHANNEL ENHANCEMENT MODE M

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 61A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DFN3333-8
• Package / Case: 8-PowerVDFN

패키지: -

SQD100N03-3M4_GE3

Vishay Siliconix

MOSFET N-CH 30V 100A TO252AA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7349 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 136W (Tc)
• Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

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DMN6068SEQ-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT223 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223-3
• Package / Case: TO-261-4, TO-261AA

패키지: -

SQ2319ADS-T1_BE3

Vishay Siliconix

MOSFET P-CH 40V 4.6A SOT23-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Tc)
• Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: -

SI4056ADY-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 5.9A/8.3A 8SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 8.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
• Rds On (Max) @ Id, Vgs: 29.2mOhm @ 5.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: -

MTD12N06EZL

onsemi

N-CHANNEL POWER MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

패키지: -

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DMN2310UFD-7

Diodes Incorporated

MOSFET BVDSS: 8V~24V U-DFN1212-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 670mW (Ta)
• Rds On (Max) @ Id, Vgs: 240mOhm @ 1A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: U-DFN1212-3 (Type C)
• Package / Case: 3-PowerUDFN

패키지: -

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