페이지 1189 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  1,189/1,502
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제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRL3705ZSPBF
Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 52A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고6,160
MOSFET (Metal Oxide)
55V
75A (Tc)
4.5V, 10V
3V @ 250µA
60nC @ 5V
2880pF @ 25V
±16V
-
130W (Tc)
8 mOhm @ 52A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRF1104S
Infineon Technologies

MOSFET N-CH 40V 100A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고16,368
MOSFET (Metal Oxide)
40V
100A (Tc)
10V
4V @ 250µA
93nC @ 10V
2900pF @ 25V
±20V
-
2.4W (Ta), 170W (Tc)
9 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRFSL23N15D
Infineon Technologies

MOSFET N-CH 150V 23A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고19,272
MOSFET (Metal Oxide)
150V
23A (Tc)
10V
5.5V @ 250µA
56nC @ 10V
1200pF @ 25V
±30V
-
3.8W (Ta), 136W (Tc)
90 mOhm @ 14A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
GP2M008A060PGH
Global Power Technologies Group

MOSFET N-CH 600V 7.5A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고6,688
MOSFET (Metal Oxide)
600V
7.5A (Tc)
10V
5V @ 250µA
23nC @ 10V
1063pF @ 25V
±30V
-
120W (Tc)
1.2 Ohm @ 3.75A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot PMV185XN,215
NXP

MOSFET N-CH 30V 1.1A TO-236AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 76pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 325mW (Ta), 1.275W (Tc)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고148,080
MOSFET (Metal Oxide)
30V
1.1A (Ta)
2.5V, 4.5V
1.5V @ 250µA
1.3nC @ 4.5V
76pF @ 15V
±12V
-
325mW (Ta), 1.275W (Tc)
250 mOhm @ 1.1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
NTLUS4195PZTAG
ON Semiconductor

MOSFET P-CH 30V 3A SGL 6UDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFN (1.6x1.6)
  • Package / Case: 6-PowerUFDFN
패키지: 6-PowerUFDFN
재고4,512
MOSFET (Metal Oxide)
30V
2A (Ta)
4.5V, 10V
3V @ 250µA
5nC @ 4.5V
250pF @ 15V
±20V
-
600mW (Ta)
90 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN (1.6x1.6)
6-PowerUFDFN
STW36NM60N
STMicroelectronics

MOSFET N-CH 600V 29A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 83.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2722pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 210W (Tc)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 14.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: TO-247-3
재고2,128
MOSFET (Metal Oxide)
600V
29A (Tc)
10V
4V @ 250µA
83.6nC @ 10V
2722pF @ 100V
±25V
-
210W (Tc)
105 mOhm @ 14.5A, 10V
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
IXFT60N25Q
IXYS

MOSFET N-CH 250V 60A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 47 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고3,536
MOSFET (Metal Oxide)
250V
60A (Tc)
10V
4V @ 4mA
180nC @ 10V
5100pF @ 25V
±20V
-
360W (Tc)
47 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
FDB9409L_F085
Fairchild/ON Semiconductor

PT8 40V LL N-CHANNEL POWERTRENCH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고2,880
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MVMBF0201NLT1G
ON Semiconductor

MOSFET N-CH 20V 300MA SOT-23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 225mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고7,408
MOSFET (Metal Oxide)
20V
300mA (Ta)
4.5V, 10V
2.4V @ 250µA
-
45pF @ 5V
±20V
-
225mW (Ta)
1 Ohm @ 300mA, 10V
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
2SK3748-1E
ON Semiconductor

MOSFET N-CH 1500V 4A TO-2PF-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 Ohm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF-3
  • Package / Case: SC-94
패키지: SC-94
재고6,396
MOSFET (Metal Oxide)
1500V
4A (Ta)
10V
-
80nC @ 10V
790pF @ 30V
±20V
-
3W (Ta), 65W (Tc)
7 Ohm @ 2A, 10V
150°C (TJ)
Through Hole
TO-3PF-3
SC-94
hot MCH3383-TL-H
ON Semiconductor

MOSFET P-CH 12V 3.5A MCH3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0.9V, 2.5V
  • Vgs(th) (Max) @ Id: 800mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 2.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 6V
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 69 mOhm @ 1.5A, 2.5V
  • Operating Temperature: -55°C ~ 150°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70FL/MCPH3
  • Package / Case: 3-SMD, Flat Leads
패키지: 3-SMD, Flat Leads
재고38,400
MOSFET (Metal Oxide)
12V
3.5A (Ta)
0.9V, 2.5V
800mV @ 1mA
6.2nC @ 2.5V
1010pF @ 6V
±5V
-
1W (Ta)
69 mOhm @ 1.5A, 2.5V
-55°C ~ 150°C (TA)
Surface Mount
SC-70FL/MCPH3
3-SMD, Flat Leads
EPC2030ENGRT
EPC

MOSFET NCH 40V 31A DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 16mA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 20V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 30A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
패키지: Die
재고49,674
GaNFET (Gallium Nitride)
40V
31A (Ta)
5V
2.5V @ 16mA
18nC @ 5V
1900pF @ 20V
+6V, -4V
-
-
2.4 mOhm @ 30A, 5V
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIHG15N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 15A TO247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
패키지: TO-247-3
재고10,380
MOSFET (Metal Oxide)
600V
15A (Tc)
10V
4V @ 250µA
78nC @ 10V
1350pF @ 100V
±30V
-
180W (Tc)
280 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
CSD19538Q2T
Texas Instruments

MOSFET NCH 100V 13.1A 6WSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 454pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WSON (2x2)
  • Package / Case: 6-WDFN Exposed Pad
패키지: 6-WDFN Exposed Pad
재고16,950
MOSFET (Metal Oxide)
100V
13.1A (Tc)
6V, 10V
3.8V @ 250µA
5.6nC @ 10V
454pF @ 50V
±20V
-
2.5W (Ta), 20.2W (Tc)
59 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-WSON (2x2)
6-WDFN Exposed Pad
hot SI7120ADN-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 6A 1212-8 PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 9.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
패키지: PowerPAK? 1212-8
재고46,584
MOSFET (Metal Oxide)
60V
6A (Ta)
4.5V, 10V
3V @ 250µA
45nC @ 10V
-
±20V
-
1.5W (Ta)
21 mOhm @ 9.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
FCPF190N60E-F154
onsemi

MOSFET N-CH 600V 20.6A TO220F-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20.6A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3
  • Package / Case: TO-220-3 Full Pack
패키지: -
Request a Quote
MOSFET (Metal Oxide)
600 V
20.6A (Tj)
-
3.5V @ 250µA
82 nC @ 10 V
3175 pF @ 25 V
±20V
-
39W (Tc)
190mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F-3
TO-220-3 Full Pack
BSZ0602LSATMA1
Infineon Technologies

MOSFET N-CH 80V 13A/40A TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 36µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8 FL
  • Package / Case: 8-PowerTDFN
패키지: -
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MOSFET (Metal Oxide)
80 V
13A (Ta), 40A (Tc)
4.5V, 10V
2.3V @ 36µA
18 nC @ 4.5 V
2340 pF @ 40 V
±20V
-
69W (Tc)
7mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
DMNH6009SPS-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W
  • Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
패키지: -
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MOSFET (Metal Oxide)
60 V
95A (Tc)
4.5V, 10V
3V @ 250µA
37.3 nC @ 10 V
1882 pF @ 30 V
±20V
-
1.6W
7.3mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
HUF76429D3
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
패키지: -
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MOSFET (Metal Oxide)
60 V
20A (Tc)
4.5V, 10V
3V @ 250µA
46 nC @ 10 V
1480 pF @ 25 V
±16V
-
110W (Tc)
23mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
IPAK
TO-251-3 Short Leads, IPAK, TO-251AA
R6009JNJGTL
Rohm Semiconductor

MOSFET N-CH 600V 9A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 1.38mA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고6,000
MOSFET (Metal Oxide)
600 V
9A (Tc)
15V
7V @ 1.38mA
22 nC @ 15 V
645 pF @ 100 V
±30V
-
125W (Tc)
585mOhm @ 4.5A, 15V
-55°C ~ 150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NTTFS2D8N04HLTAG
onsemi

MOSFET N-CH 40V 24A/104A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 104A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.75mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
패키지: -
재고2,700
MOSFET (Metal Oxide)
40 V
24A (Ta), 104A (Tc)
4.5V, 10V
2V @ 80µA
32 nC @ 10 V
1960 pF @ 20 V
±20V
-
3.2W (Ta), 63W (Tc)
2.75mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
IPI90R500C3XKSA2
Infineon Technologies

MOSFET N-CH 900V 11A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 740µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3-1
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
패키지: -
재고1,914
MOSFET (Metal Oxide)
900 V
11A (Tc)
10V
3.5V @ 740µA
68 nC @ 10 V
1700 pF @ 100 V
±20V
-
156W (Tc)
500mOhm @ 6.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO262-3-1
TO-262-3 Long Leads, I2PAK, TO-262AA
PJMF990N65EC_T0_00001
Panjit International Inc.

650V SUPER JUNCTION MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 22.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ITO-220AB-F
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
패키지: -
재고6,000
MOSFET (Metal Oxide)
650 V
4.7A (Tc)
10V
4V @ 250µA
9.7 nC @ 10 V
306 pF @ 400 V
±30V
-
22.5W (Tc)
990mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ITO-220AB-F
TO-220-3 Full Pack, Isolated Tab
IPWS65R035CFD7AXKSA1
Infineon Technologies

MOSFET N-CH 650V 63A TO247-3-41

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
  • Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 305W (Tc)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 35.8A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-41
  • Package / Case: TO-247-3
패키지: -
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MOSFET (Metal Oxide)
650 V
63A (Tc)
10V
4.5V @ 1.79mA
145 nC @ 10 V
7149 pF @ 400 V
±20V
-
305W (Tc)
35mOhm @ 35.8A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
G2R50MT33K
GeneSiC Semiconductor

3300V 50M TO-247-4 SIC MOSFET

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 3300 V
  • Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.5V @ 10mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7301 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 536W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
패키지: -
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SiCFET (Silicon Carbide)
3300 V
63A (Tc)
20V
3.5V @ 10mA (Typ)
340 nC @ 20 V
7301 pF @ 1000 V
+25V, -10V
-
536W (Tc)
50mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
NVMFWS005N10MCLT1G
onsemi

PTNG 100V LL SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 18.4A (Ta), 108A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 192µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 131W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 34A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
  • Package / Case: 8-PowerTDFN, 5 Leads
패키지: -
재고4,500
MOSFET (Metal Oxide)
100 V
18.4A (Ta), 108A (Tc)
4.5V, 10V
3V @ 192µA
55 nC @ 10 V
4100 pF @ 50 V
±20V
-
3.8W (Ta), 131W (Tc)
5.1mOhm @ 34A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
5-DFNW (4.9x5.9) (8-SOFL-WF)
8-PowerTDFN, 5 Leads
G1007
Goford Semiconductor

N100V,7A,RD<110M@10V,VTH1.0V~3.0

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 1A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: -
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MOSFET (Metal Oxide)
100 V
7A (Tc)
4.5V, 10V
3V @ 250µA
11 nC @ 10 V
612 pF @ 50 V
±20V
-
28W (Tc)
110mOhm @ 1A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)