페이지 1195 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  1,195/1,502
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제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
MCH6341-TL-H
ON Semiconductor

MOSFET P-CH 30V 5A MCPH6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 3A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-MCPH
  • Package / Case: 6-TSSOP, SC-88, SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고7,888
MOSFET (Metal Oxide)
30V
5A (Ta)
4V, 10V
-
10nC @ 10V
430pF @ 10V
±20V
-
1.5W (Ta)
59 mOhm @ 3A, 10V
-
Surface Mount
6-MCPH
6-TSSOP, SC-88, SOT-363
2SK4099LS
ON Semiconductor

MOSFET N-CH 600V 8.5A TO-220FI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 30V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 940 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FI(LS)
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고7,968
MOSFET (Metal Oxide)
600V
6.9A (Tc)
10V
5V @ 1mA
29nC @ 10V
750pF @ 30V
±30V
-
2W (Ta), 35W (Tc)
940 mOhm @ 4A, 10V
150°C (TJ)
Through Hole
TO-220FI(LS)
TO-220-3 Full Pack
FDP5690
Fairchild/ON Semiconductor

MOSFET N-CH 60V 32A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 58W (Tc)
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 16A, 10V
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: TO-220-3
재고7,664
MOSFET (Metal Oxide)
60V
32A (Tc)
6V, 10V
4V @ 250µA
33nC @ 10V
1120pF @ 25V
±20V
-
58W (Tc)
27 mOhm @ 16A, 10V
-65°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
IPP039N10N5AKSA1
Infineon Technologies

MOSFET N-CH 10V TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 125µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 188W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고7,200
MOSFET (Metal Oxide)
100V
100A (Tc)
6V, 10V
3.8V @ 125µA
95nC @ 10V
7000pF @ 50V
±20V
-
188W (Tc)
3.9 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IXTP26P10T
IXYS

MOSFET P-CH 100V 26A TO-220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고6,144
MOSFET (Metal Oxide)
100V
26A (Tc)
10V
4.5V @ 250µA
52nC @ 10V
3820pF @ 25V
±15V
-
150W (Tc)
90 mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
TPS1101DG4
Texas Instruments

MOSFET P-CH 15V 2.3A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 15V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): +2V, -15V
  • FET Feature: -
  • Power Dissipation (Max): 791mW (Ta)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,008
MOSFET (Metal Oxide)
15V
2.3A (Ta)
2.7V, 10V
1.5V @ 250µA
11.25nC @ 10V
-
+2V, -15V
-
791mW (Ta)
90 mOhm @ 2.5A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
hot SI4490DY-T1-E3
Vishay Siliconix

MOSFET N-CH 200V 2.85A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,504
MOSFET (Metal Oxide)
200V
2.85A (Ta)
6V, 10V
2V @ 250µA (Min)
42nC @ 10V
-
±20V
-
1.56W (Ta)
80 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
PMZB320UPEYL
Nexperia USA Inc.

MOSFET P-CH 30V SOT883

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 122pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
  • Rds On (Max) @ Id, Vgs: 510 mOhm @ 1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1006B-3
  • Package / Case: 3-XFDFN
패키지: 3-XFDFN
재고2,464
MOSFET (Metal Oxide)
30V
1A (Ta)
1.5V, 4.5V
950mV @ 250µA
1.4nC @ 4.5V
122pF @ 15V
±8V
-
350mW (Ta), 6.25W (Tc)
510 mOhm @ 1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
DFN1006B-3
3-XFDFN
FDMC8321LDC
Fairchild/ON Semiconductor

MOSFET N-CH 40V 27A POWER33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 108A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3965pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.9W (Ta), 56W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 27A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Dual Cool ? 33
  • Package / Case: 8-PowerTDFN
패키지: 8-PowerTDFN
재고7,024
MOSFET (Metal Oxide)
40V
27A (Ta), 108A (Tc)
4.5V, 10V
3V @ 250µA
60nC @ 10V
3965pF @ 20V
±20V
-
2.9W (Ta), 56W (Tc)
2.5 mOhm @ 27A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Dual Cool ? 33
8-PowerTDFN
hot RQ6E045BNTCR
Rohm Semiconductor

MOSFET N-CH 30V 4.5A TSMT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: SOT-23-6 Thin, TSOT-23-6
재고36,360
MOSFET (Metal Oxide)
30V
4.5A (Ta)
4.5V, 10V
2.5V @ 1mA
8.4nC @ 10V
330pF @ 15V
±20V
-
1.25W (Ta)
30 mOhm @ 4.5A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
STB28NM50N
STMicroelectronics

MOSFET N-CH 500V 21A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 158 mOhm @ 10.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고14,892
MOSFET (Metal Oxide)
500V
21A (Tc)
10V
4V @ 250µA
50nC @ 10V
1735pF @ 25V
±25V
-
150W (Tc)
158 mOhm @ 10.5A, 10V
150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN026-80YS,115
Nexperia USA Inc.

MOSFET N-CH 80V 34A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 27.5 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
패키지: SC-100, SOT-669
재고237,780
MOSFET (Metal Oxide)
80V
34A (Tc)
10V
4V @ 1mA
20nC @ 10V
1200pF @ 40V
±20V
-
74W (Tc)
27.5 mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
RV5L030GNTCR1
Rohm Semiconductor

MOSFET N-CH 30V 3A DFN1616-6

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NVTFWS8D1N08HTAG
onsemi

80V T8 IN U8FL HEFET PACK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 61A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.3mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFNW (3.3x3.3)
  • Package / Case: 8-PowerWDFN
패키지: -
Request a Quote
MOSFET (Metal Oxide)
80 V
14A (Ta), 61A (Tc)
6V, 10V
4V @ 270µA
23 nC @ 10 V
1450 pF @ 40 V
±20V
-
3.8W (Ta), 75W (Tc)
8.3mOhm @ 16A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFNW (3.3x3.3)
8-PowerWDFN
R8003KND3TL1
Rohm Semiconductor

HIGH-SPEED SWITCHING NCH 800V 3A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고2,754
MOSFET (Metal Oxide)
800 V
3A (Ta)
10V
4.5V @ 2mA
11.5 nC @ 10 V
300 pF @ 100 V
±20V
-
45W (Ta)
1.8Ohm @ 1.5A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
MCH5801-TL-E
onsemi

NCH+SBD 1.8V DRIVE SERIES

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMT15H053SK3-13
Diodes Incorporated

MOSFET BVDSS: 101V~250V TO252 T&

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고7,470
MOSFET (Metal Oxide)
150 V
21A (Tc)
10V
4V @ 250µA
11.5 nC @ 10 V
814 pF @ 75 V
±20V
-
1.7W (Ta)
60mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMP4009SSS-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V SO-8 T&R 2

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: -
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MOSFET (Metal Oxide)
40 V
10A (Ta)
4.5V, 10V
2.5V @ 250µA
112 nC @ 10 V
5697 pF @ 20 V
±20V
-
1.5W
11mOhm @ 9.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
QM2416K-ML
MOSLEADER

Single N 20V 3.5A SOT23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
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GT023N10TL
Goford Semiconductor

MOSFET N-CH 100V 330A TOLL-8

  • FET Type: -
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8058 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TOLL
  • Package / Case: -
패키지: -
재고6,000
MOSFET (Metal Oxide)
-
330A (Tc)
10V
3.8V @ 250µA
121 nC @ 10 V
8058 pF @ 50 V
±20V
-
-
1.9mOhm @ 80A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TOLL
-
ECH8411-TL-E-SA
Sanyo

MOSFET N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
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SSM3K341TU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 6A UFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Lead
패키지: -
재고43,884
MOSFET (Metal Oxide)
60 V
6A (Ta)
4V, 10V
2.5V @ 100µA
9.3 nC @ 10 V
550 pF @ 10 V
±20V
-
1.8W (Ta)
36mOhm @ 4A, 10V
175°C
Surface Mount
UFM
3-SMD, Flat Lead
XP233N0501TR-G
Torex Semiconductor Ltd

MOSFET N-CH 30V 500MA SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.78 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
재고210
MOSFET (Metal Oxide)
30 V
500mA (Ta)
2.5V, 4.5V
1.7V @ 250µA
0.78 nC @ 10 V
40 pF @ 10 V
±20V
-
400mW (Ta)
1.5Ohm @ 100mA, 4.5V
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
R6020JNXC7G
Rohm Semiconductor

MOSFET N-CH 600V 20A TO220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 3.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 76W (Tc)
  • Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
패키지: -
재고5,790
MOSFET (Metal Oxide)
600 V
20A (Tc)
15V
7V @ 3.5mA
45 nC @ 15 V
1500 pF @ 100 V
±30V
-
76W (Tc)
234mOhm @ 10A, 15V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
TP65H015G5WS
Transphorm

650 V 95 A GAN FET

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5218 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 266W (Tc)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: -
재고2,196
GaNFET (Gallium Nitride)
650 V
93A (Tc)
10V
4.8V @ 2mA
100 nC @ 10 V
5218 pF @ 400 V
±20V
-
266W (Tc)
18mOhm @ 60A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
MCU20N10A-TP-HF
Micro Commercial Co

Interface

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2014 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 47W
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
Request a Quote
MOSFET (Metal Oxide)
100 V
20A
4.5V, 10V
2.5V @ 250µA
53 nC @ 10 V
2014 pF @ 50 V
±20V
-
47W
45mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
PSMN8R5-40MSDX
Nexperia USA Inc.

MOSFET N-CH 40V 60A LFPAK33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1322 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 59W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK33
  • Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
패키지: -
재고13,440
MOSFET (Metal Oxide)
40 V
60A (Ta)
10V
3.6V @ 1mA
19 nC @ 10 V
1322 pF @ 20 V
±20V
-
59W (Ta)
8.5mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
DMT10H4M9SPSW-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V PowerDI50

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
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