이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 500V 4.3A TO251
|
패키지: TO-251-3 Short Leads, IPak, TO-251AA |
재고7,696 |
|
MOSFET (Metal Oxide) | 500V | 4.3A (Tc) | 13V | 3.5V @ 100µA | 10.5nC @ 10V | 231pF @ 100V | ±20V | - | 34W (Tc) | 950 mOhm @ 1.2A, 13V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 60V 30A TO252-3
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고6,176 |
|
MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4.5V, 10V | 2.2V @ 10µA | 21nC @ 10V | 1560pF @ 25V | ±16V | - | 36W (Tc) | 23 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 75V 100A TO-220
|
패키지: TO-220-3 |
재고5,472 |
|
MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 2V @ 250µA | 246nC @ 10V | 7130pF @ 25V | ±20V | - | 300W (Tc) | 6.8 mOhm @ 68A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 75V 80A I2PAK
|
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA |
재고3,056 |
|
MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 4V @ 250µA | 185nC @ 10V | 5830pF @ 25V | ±20V | - | 300W (Tc) | 7.3 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 30V 38A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고18,096 |
|
MOSFET (Metal Oxide) | 30V | 38A (Tc) | 4.5V, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | ±16V | - | 3.8W (Ta), 68W (Tc) | 26 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 40V 22.8A POWER56
|
패키지: 8-PowerTDFN |
재고7,848 |
|
MOSFET (Metal Oxide) | 40V | 22.8A (Ta), 49A (Tc) | 4.5V, 10V | 3V @ 250µA | 152nC @ 10V | 8075pF @ 20V | ±20V | - | 2.5W (Ta), 104W (Tc) | 3.1 mOhm @ 22.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 250V 34A TO-3PF
|
패키지: SC-94 |
재고3,360 |
|
MOSFET (Metal Oxide) | 250V | 34A (Tc) | 10V | 5V @ 250µA | 100nC @ 10V | 4640pF @ 25V | ±30V | - | 115W (Tc) | 41 mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | SC-94 |
||
Vishay Siliconix |
MOSFET N-CH 30V 4.6A 6-TSOP
|
패키지: SOT-23-6 Thin, TSOT-23-6 |
재고806,352 |
|
MOSFET (Metal Oxide) | 30V | 4.6A (Ta) | 2.5V, 4.5V | 600mV @ 1mA (Min) | 12nC @ 4.5V | - | ±12V | - | 1.14W (Ta) | 34 mOhm @ 6.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 55V 60A TO-262AA
|
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA |
재고2,880 |
|
MOSFET (Metal Oxide) | 55V | 66A (Tc) | 10V | 4V @ 250µA | 85nC @ 20V | 1300pF @ 25V | ±20V | - | 150W (Tc) | 16 mOhm @ 66A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262AA | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Vishay Siliconix |
MOSFET N-CH 100V 5.6A TO-220AB
|
패키지: TO-220-3 |
재고544,200 |
|
MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 4V, 5V | 2V @ 250µA | 6.1nC @ 5V | 250pF @ 25V | ±10V | - | 43W (Tc) | 540 mOhm @ 3.4A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET P-CH 40V 6.2A 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고148,740 |
|
MOSFET (Metal Oxide) | 40V | 6.2A (Ta) | 4.5V, 10V | 3V @ 250µA | 80nC @ 10V | 3220pF @ 25V | ±20V | - | 2.5W (Ta) | 41 mOhm @ 6.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Microchip Technology |
MOSFET P-CH 400V 0.086A TO92-3
|
패키지: TO-226-3, TO-92-3 (TO-226AA) |
재고6,832 |
|
MOSFET (Metal Oxide) | 400V | 86mA (Tj) | 4.5V, 10V | 2.4V @ 1mA | - | 125pF @ 25V | ±20V | - | 740mW (Ta) | 25 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Diodes Incorporated |
MOSFET BVDSS: 25V 30V POWERDI506
|
패키지: 8-PowerTDFN |
재고4,800 |
|
MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 139nC @ 10V | 6807pF @ 15V | ±20V | - | 2.6W (Ta) | 7.5 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 650V 22A TO-263
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고3,744 |
|
MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 5.5V @ 1.5mA | 38nC @ 10V | 2310pF @ 25V | ±30V | - | 390W (Tc) | 160 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 20V 15A 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고38,604 |
|
MOSFET (Metal Oxide) | 20V | 15A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 130nC @ 4.5V | 7980pF @ 15V | ±12V | - | 2.5W (Ta) | 8.2 mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 500V 18.5A TO247
|
패키지: TO-247-3 |
재고10,116 |
|
MOSFET (Metal Oxide) | 500V | 18.5A (Tc) | 13V | 3.5V @ 510µA | 47.2nC @ 10V | 1137pF @ 100V | ±20V | Super Junction | 127W (Tc) | 190 mOhm @ 6.2A, 13V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 500V 5A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고685,992 |
|
MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 4.5V @ 250µA | 24nC @ 10V | 490pF @ 25V | ±30V | - | 110W (Tc) | 1.7 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 55V 42A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고182,400 |
|
MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 4V @ 50µA | 60nC @ 10V | 1720pF @ 25V | ±20V | - | 91W (Tc) | 11 mOhm @ 37A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Rohm Semiconductor |
MOSFET P-CH 30V 2A TUMT6
|
패키지: - |
재고40,401 |
|
MOSFET (Metal Oxide) | 30 V | 2A (Ta) | 10V | 2.5V @ 1mA | 3.9 nC @ 5 V | 350 pF @ 10 V | ±20V | - | 1W (Ta) | 120mOhm @ 2A, 10V | 150°C | Surface Mount | TUMT6 | 6-SMD, Flat Leads |
||
Panjit International Inc. |
650V/ 900MOHM SUPER JUNCTION EAS
|
패키지: - |
재고5,895 |
|
MOSFET (Metal Oxide) | 650 V | 4.7A (Tc) | 10V | 4V @ 250µA | 13 nC @ 10 V | 382 pF @ 400 V | ±30V | - | 25.5W (Tc) | 900mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB-F | TO-220-3 Full Pack, Isolated Tab |
||
Central Semiconductor Corp |
MOSFET N-CH 30V 450MA SOT523
|
패키지: - |
재고49,680 |
|
MOSFET (Metal Oxide) | 30 V | 450mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 0.79 nC @ 4.5 V | 45 pF @ 25 V | 8V | - | 250mW (Ta) | 460mOhm @ 200mA, 4.5V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
||
SMC Diode Solutions |
MOSFET SILICON CARBIDE SIC 1200V
|
패키지: - |
재고663 |
|
SiCFET (Silicon Carbide) | 1200 V | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-3 | TO-247-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 80V 3.2A/9.8A 6DFN
|
패키지: - |
재고55,737 |
|
MOSFET (Metal Oxide) | 80 V | 3.2A (Ta), 9.8A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 14.9 nC @ 10 V | 504 pF @ 40 V | ±20V | - | 2W (Ta), 18.8W (Tc) | 81mOhm @ 3.2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
||
Infineon Technologies |
N-CHANNEL POWER MOSFET
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 14 nC @ 10 V | 1500 pF @ 15 V | ±20V | - | 38W (Tc) | 11.4mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
MOSLEADER |
Single P -30V -3A SOT-23
|
패키지: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 900V 6.9A TO220
|
패키지: - |
재고1,482 |
|
MOSFET (Metal Oxide) | 900 V | 6.9A (Tc) | 10V | 3.5V @ 460µA | 42 nC @ 10 V | 1100 pF @ 100 V | ±20V | - | 33W (Tc) | 800mOhm @ 4.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Rohm Semiconductor |
MOSFET P-CH 30V 7.5A 8SOP
|
패키지: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 20V 12.5A PPAK
|
패키지: - |
재고17,748 |
|
MOSFET (Metal Oxide) | 20 V | 12.5A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 27 nC @ 4.5 V | - | ±12V | - | 1.5W (Ta) | 6.2mOhm @ 19.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | PowerPAK® 1212-8SH |