페이지 1239 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  1,239/1,502
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설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot SPI80N06S2-07
Infineon Technologies

MOSFET N-CH 55V 80A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 180µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4540pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 68A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3-1
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고14,028
MOSFET (Metal Oxide)
55V
80A (Tc)
10V
4V @ 180µA
110nC @ 10V
4540pF @ 25V
±20V
-
250W (Tc)
6.6 mOhm @ 68A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3-1
TO-262-3 Long Leads, I2Pak, TO-262AA
hot IRF520N
Infineon Technologies

MOSFET N-CH 100V 9.7A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고390,096
MOSFET (Metal Oxide)
100V
9.7A (Tc)
10V
4V @ 250µA
25nC @ 10V
330pF @ 25V
±20V
-
48W (Tc)
200 mOhm @ 5.7A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot SI2305ADS-T1-GE3
Vishay Siliconix

MOSFET P-CH 8V 5.4A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 4V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.1A, 4.5V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고961,728
MOSFET (Metal Oxide)
8V
5.4A (Tc)
1.8V, 4.5V
800mV @ 250µA
15nC @ 4.5V
740pF @ 4V
±8V
-
960mW (Ta), 1.7W (Tc)
40 mOhm @ 4.1A, 4.5V
-50°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot HUFA75429D3ST
Fairchild/ON Semiconductor

MOSFET N-CH 60V 20A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고28,200
MOSFET (Metal Oxide)
60V
20A (Tc)
10V
4V @ 250µA
85nC @ 20V
1090pF @ 25V
±20V
-
125W (Tc)
25 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
FQPF1N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 0.9A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 16W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 Ohm @ 450mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고7,328
MOSFET (Metal Oxide)
500V
900mA (Tc)
10V
5V @ 250µA
5.5nC @ 10V
150pF @ 25V
±30V
-
16W (Tc)
9 Ohm @ 450mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
SPI15N65C3XKSA1
Infineon Technologies

MOSFET N-CH 650V 15A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 675µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 9.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3-1
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고7,856
MOSFET (Metal Oxide)
650V
15A (Tc)
10V
3.9V @ 675µA
63nC @ 10V
1600pF @ 25V
±20V
-
156W (Tc)
280 mOhm @ 9.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO262-3-1
TO-262-3 Long Leads, I2Pak, TO-262AA
IPI120P04P404AKSA1
Infineon Technologies

MOSFET P-CH TO262-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 340µA
  • Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14790pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3-1
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고7,056
MOSFET (Metal Oxide)
40V
120A (Tc)
10V
4V @ 340µA
205nC @ 10V
14790pF @ 25V
±20V
-
136W (Tc)
3.8 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3-1
TO-262-3 Long Leads, I2Pak, TO-262AA
APTM120UM70DAG
Microsemi Corporation

MOSFET N-CH 1200V 171A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 171A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 1650nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 43500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 5000W (Tc)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 85.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
패키지: SP6
재고5,808
MOSFET (Metal Oxide)
1200V
171A
10V
5V @ 30mA
1650nC @ 10V
43500pF @ 25V
±30V
-
5000W (Tc)
80 mOhm @ 85.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
IXFH4N100Q
IXYS

MOSFET N-CH 1000V 4A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
패키지: TO-247-3
재고3,232
MOSFET (Metal Oxide)
1000V
4A (Tc)
10V
5V @ 1.5mA
39nC @ 10V
1050pF @ 25V
±20V
-
150W (Tc)
3 Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
hot IRFBF30
Vishay Siliconix

MOSFET N-CH 900V 3.6A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고74,532
MOSFET (Metal Oxide)
900V
3.6A (Tc)
10V
4V @ 250µA
78nC @ 10V
1200pF @ 25V
±20V
-
125W (Tc)
3.7 Ohm @ 2.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
TK8A10K3,S5Q
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 8A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 18W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고7,248
MOSFET (Metal Oxide)
100V
8A (Ta)
10V
4V @ 1mA
12.9nC @ 10V
530pF @ 10V
±20V
-
18W (Tc)
120 mOhm @ 4A, 10V
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack
hot TPS1101DRG4
Texas Instruments

MOSFET P-CH 15V 2.3A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 15V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): +2V, -15V
  • FET Feature: -
  • Power Dissipation (Max): 791mW (Ta)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고378,504
MOSFET (Metal Oxide)
15V
2.3A (Ta)
2.7V, 10V
1.5V @ 250µA
11.25nC @ 10V
-
+2V, -15V
-
791mW (Ta)
90 mOhm @ 2.5A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
DMS2085LSD-13
Diodes Incorporated

MOSFET P-CH 20V 3.3A

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 353pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,688
MOSFET (Metal Oxide)
20V
3.3A (Ta)
4.5V, 10V
2.2V @ 250µA
7.8nC @ 10V
353pF @ 15V
±20V
Schottky Diode (Isolated)
1.1W (Ta)
85 mOhm @ 3.05A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot FDP8443_F085
Fairchild/ON Semiconductor

MOSFET N-CH 40V TO-220AB-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9310pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 188W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고390,000
MOSFET (Metal Oxide)
40V
20A (Ta), 80A (Tc)
10V
4V @ 250µA
185nC @ 10V
9310pF @ 25V
±20V
-
188W (Tc)
3.5 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot STP140N6F7
STMicroelectronics

MOSFET N-CH 60V 80A F7 TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 158W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 40A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: TO-220-3
재고6,176
MOSFET (Metal Oxide)
60V
80A (Tc)
10V
4V @ 250µA
55nC @ 10V
3100pF @ 10V
±20V
-
158W (Tc)
3.5 mOhm @ 40A, 10V
175°C (TJ)
Through Hole
TO-220
TO-220-3
FDMC86184
Fairchild/ON Semiconductor

MOSFET N-CH 100V 57A 8PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 110µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 6V
  • Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (3.3x3.3), Power33
  • Package / Case: 8-PowerWDFN
패키지: 8-PowerWDFN
재고2,608
MOSFET (Metal Oxide)
100V
57A (Tc)
6V, 10V
4V @ 110µA
20nC @ 6V
2090pF @ 50V
±20V
-
54W (Tc)
8.5 mOhm @ 21A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (3.3x3.3), Power33
8-PowerWDFN
hot FDMS7698
Fairchild/ON Semiconductor

MOSFET N-CH 30V 13.5A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 13.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6), Power56
  • Package / Case: 8-PowerTDFN
패키지: 8-PowerTDFN
재고336,720
MOSFET (Metal Oxide)
30V
13.5A (Ta), 22A (Tc)
4.5V, 10V
3V @ 250µA
24nC @ 10V
1605pF @ 15V
±20V
-
2.5W (Ta), 29W (Tc)
10 mOhm @ 13.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6), Power56
8-PowerTDFN
STFI130N10F3
STMicroelectronics

MOSFET N-CH 100V 46A I2PAKFP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3305pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAKFP (TO-281)
  • Package / Case: TO-262-3 Full Pack, I2Pak
패키지: TO-262-3 Full Pack, I2Pak
재고12,372
MOSFET (Metal Oxide)
100V
46A (Tc)
10V
4V @ 250µA
57nC @ 10V
3305pF @ 25V
±20V
-
35W (Tc)
9.6 mOhm @ 23A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I2PAKFP (TO-281)
TO-262-3 Full Pack, I2Pak
hot IRFR014PBF
Vishay Siliconix

MOSFET N-CH 60V 7.7A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고390,000
MOSFET (Metal Oxide)
60V
7.7A (Tc)
10V
4V @ 250µA
11nC @ 10V
300pF @ 25V
±20V
-
2.5W (Ta), 25W (Tc)
200 mOhm @ 4.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD24N06LT4G
ON Semiconductor

MOSFET N-CH 60V 24A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 10A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고1,099,944
MOSFET (Metal Oxide)
60V
24A (Ta)
5V
2V @ 250µA
32nC @ 5V
1140pF @ 25V
±15V
-
1.36W (Ta), 62.5W (Tj)
45 mOhm @ 10A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
SM2315PSAC-TRG-ML
MOSLEADER

P -30V -5A SOT-23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
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IPP070N08N3G
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 73µA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
80 V
80A (Tc)
6V, 10V
3.5V @ 73µA
56 nC @ 10 V
3840 pF @ 40 V
±20V
-
136W (Tc)
7mOhm @ 73A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
NTHL020N090SC1
onsemi

SICFET N-CH 900V 118A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 4.3V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
  • Vgs (Max): +19V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 503W (Tc)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: -
재고918
SiCFET (Silicon Carbide)
900 V
118A (Tc)
15V
4.3V @ 20mA
196 nC @ 15 V
4415 pF @ 450 V
+19V, -10V
-
503W (Tc)
28mOhm @ 60A, 15V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
TK49N65W5-S1F
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 57mOhm @ 24.6A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
650 V
49.2A (Ta)
10V
4.5V @ 2.5mA
185 nC @ 10 V
6500 pF @ 300 V
±30V
-
400W (Tc)
57mOhm @ 24.6A, 10V
150°C
Through Hole
TO-247
TO-247-3
IDYH10G200C5XKSA1
Infineon Technologies

SIC DISCRETE

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
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IAUCN04S6N009TATMA1
Infineon Technologies

MOSFET_(20V 40V)

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
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NTPF600N80S3Z
onsemi

SF3 800V 600MOHM TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 180µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
패키지: -
Request a Quote
MOSFET (Metal Oxide)
800 V
8A (Tj)
10V
3.8V @ 180µA
15.5 nC @ 10 V
725 pF @ 400 V
±20V
-
28W (Tc)
600mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
2SK2869-91L
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
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