이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH WAFER
|
패키지: - |
재고5,488 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 30V 5.6A MICRO8
|
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
재고119,100 |
|
MOSFET (Metal Oxide) | 30V | 5.6A (Ta) | 4.5V, 10V | 1V @ 250µA | 27nC @ 10V | 520pF @ 25V | ±20V | - | 1.8W (Ta) | 35 mOhm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro8? | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
||
Infineon Technologies |
MOSFET N-CH 40V 42A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고6,464 |
|
MOSFET (Metal Oxide) | 40V | 42A (Tc) | 10V | 4V @ 250µA | 89nC @ 10V | 2950pF @ 25V | ±20V | - | 140W (Tc) | 5.5 mOhm @ 42A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 60V 800MA 4-DIP
|
패키지: 4-DIP (0.300", 7.62mm) |
재고4,400 |
|
MOSFET (Metal Oxide) | 60V | 800mA (Tc) | 10V | 4V @ 250µA | 7nC @ 10V | 200pF @ 25V | ±20V | - | 1W (Tc) | 800 mOhm @ 800mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | 4-HVMDIP | 4-DIP (0.300", 7.62mm) |
||
IXYS |
MOSFET N-CH 1000V 12A TO-247AD
|
패키지: TO-3P-3 Full Pack |
재고8,904 |
|
MOSFET (Metal Oxide) | 1000V | 12A (Tc) | 10V | 5.5V @ 4mA | 77nC @ 10V | 2700pF @ 25V | ±20V | - | 300W (Tc) | 1.05 Ohm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-3P-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 350V 12A TO-220F
|
패키지: TO-220-3 Full Pack |
재고5,120 |
|
MOSFET (Metal Oxide) | 350V | 12A (Tc) | 10V | 5V @ 250µA | 25nC @ 10V | 1110pF @ 25V | ±30V | - | 31.3W (Tc) | 380 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 100V 13A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고3,760 |
|
MOSFET (Metal Oxide) | 100V | 13A (Ta) | 10V | 4V @ 250µA | 20nC @ 10V | 550pF @ 25V | ±20V | - | 64.7W (Ta) | 165 mOhm @ 6.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 60V 30A TO220AB
|
패키지: TO-220-3 |
재고522,072 |
|
MOSFET (Metal Oxide) | 60V | 30A (Ta) | 5V | 2V @ 250µA | 32nC @ 5V | 1150pF @ 25V | ±15V | - | 88.2W (Tc) | 46 mOhm @ 15A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 100A LFPAK
|
패키지: SC-100, SOT-669 |
재고3,312 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 29.5nC @ 10V | 2081pF @ 15V | ±20V | - | 92W (Tc) | 3.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
NXP |
MOSFET N-CH 30V 100A LFPAK
|
패키지: SC-100, SOT-669 |
재고7,392 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 30.5nC @ 4.5V | 4840pF @ 12V | ±20V | - | 62.5W (Tc) | 3.3 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Infineon Technologies |
MOSFET N-CH 60V 43A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고517,500 |
|
MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 4V @ 50µA | 30nC @ 10V | 1150pF @ 50V | ±20V | - | 71W (Tc) | 15.8 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Micro Commercial Co |
MOSFET N-CH 20V 6A SOT23
|
패키지: TO-236-3, SC-59, SOT-23-3 |
재고5,312 |
|
MOSFET (Metal Oxide) | 20V | 6A | 1.8V, 10V | 3V @ 250µA | - | 630pF @ 10V | ±12V | - | 350mW | 24 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
STMicroelectronics |
MOSFET N-CH 800V 2A TO220
|
패키지: TO-220-3 |
재고6,368 |
|
MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 5V @ 100µA | 3nC @ 10V | 95pF @ 100V | 30V | - | 45W (Tc) | 4.5 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 600V 7.3A TO252
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고70,884 |
|
MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 3.5V @ 200µA | 20.5nC @ 10V | 440pF @ 100V | ±20V | - | 63W (Tc) | 600 mOhm @ 2.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 40V 60A SO8
|
패키지: PowerPAK? SO-8 |
재고4,704 |
|
MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 80nC @ 10V | 5000pF @ 25V | ±20V | - | 68W (Tc) | 3.2 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Vishay Siliconix |
MOSFET P-CH 200V 11A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고42,516 |
|
MOSFET (Metal Oxide) | 200V | 11A (Tc) | 10V | 4V @ 250µA | 44nC @ 10V | 1200pF @ 25V | ±20V | - | 125W (Tc) | 500 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 400V 3.3A TO-220AB
|
패키지: TO-220-3 |
재고339,408 |
|
MOSFET (Metal Oxide) | 400V | 3.3A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 410pF @ 25V | ±20V | - | 50W (Tc) | 1.8 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 40V 6-MLP
|
패키지: 6-WDFN Exposed Pad |
재고43,242 |
|
MOSFET (Metal Oxide) | 40V | 10A (Tc) | 4.5V, 10V | 3V @ 250µA | 20nC @ 10V | 1260pF @ 20V | ±20V | - | 2.4W (Ta) | 14 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-WDFN Exposed Pad |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 12A 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고370,836 |
|
MOSFET (Metal Oxide) | 60V | 12A (Tc) | 6V, 10V | 4V @ 250µA | 45nC @ 10V | 2200pF @ 25V | ±20V | - | 2.5W (Ta) | 10 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Diodes Incorporated |
MOSFET N CH 5.1A U-WLB1010-4
|
패키지: - |
Request a Quote |
|
- | 12 V | 5.1A (Ta) | 1.8V, 4.5V | 1.2V @ 250µA | 2.3 nC @ 4.5 V | 288 pF @ 6 V | ±8V | - | 800mW (Ta) | 23mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-WLB1010-4 (Type C) | 4-UFBGA, WLBGA |
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Infineon Technologies |
MOSFET N-CH 650V 46A TO263-3
|
패키지: - |
재고5,592 |
|
MOSFET (Metal Oxide) | 650 V | 46A (Tc) | 10V | 4V @ 1.25mA | 93 nC @ 10 V | 4340 pF @ 400 V | ±20V | - | 227W (Tc) | 45mOhm @ 24.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V SOT23 T&R
|
패키지: - |
재고17,868 |
|
MOSFET (Metal Oxide) | 30 V | 2.3A (Ta) | 3.3V, 10V | 1.8V @ 250µA | 5.5 nC @ 10 V | 233 pF @ 15 V | ±20V | - | 770mW (Ta) | 59mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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onsemi |
MOSFET N-CH 650V 65A TO247-3
|
패키지: - |
재고3,528 |
|
MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 4.5V @ 6.5mA | 136 nC @ 10 V | 4740 pF @ 400 V | ±30V | - | 417W (Tc) | 40mOhm @ 32.5A, 10V | -55°C ~ 150°C | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET MINIPACK-2
|
패키지: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI50
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 41.7A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 10.4 nC @ 10 V | 641 pF @ 25 V | ±20V | - | 3.9W (Ta), 65W (Tc) | 25mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 20A (Tc) | 4.5V, 10V | 3V @ 250µA | 10.3 nC @ 10 V | 315 pF @ 25 V | ±20V | - | 35W (Tc) | 52mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
패키지: - |
재고129 |
|
MOSFET (Metal Oxide) | 650 V | 17.3A (Ta) | 10V | 3.5V @ 900µA | 45 nC @ 10 V | 1800 pF @ 300 V | ±30V | - | 45W (Tc) | 200mOhm @ 8.7A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4.5V, 10V | 1V @ 250µA | 47 nC @ 10 V | 1605 pF @ 25 V | ±20V | - | 2.5W (Ta) | 13mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |