이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 100A TO263-3-2
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고9,768 |
|
MOSFET (Metal Oxide) | 55V | 100A (Tc) | 5V, 10V | 2.2V @ 230µA | 550nC @ 10V | 26240pF @ 25V | ±16V | - | 300W (Tc) | 2.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 20V 12A 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고1,126,476 |
|
MOSFET (Metal Oxide) | 20V | 12A (Ta) | 4.5V, 10V | 3V @ 250µA | 19nC @ 4.5V | 2050pF @ 10V | ±20V | - | 2.5W (Ta) | 10 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 100V 73A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고3,488 |
|
MOSFET (Metal Oxide) | 100V | 73A (Tc) | 10V | 4V @ 100µA | 140nC @ 10V | 3550pF @ 50V | ±20V | - | 190W (Tc) | 14 mOhm @ 44A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH W/DIO 6DFN
|
패키지: 6-WDFN Exposed Pad |
재고4,896 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 6-DFN (2x2) | 6-WDFN Exposed Pad |
||
ON Semiconductor |
MOSFET N-CH 30V 8.3A 8WDFN
|
패키지: 8-PowerWDFN |
재고2,192 |
|
MOSFET (Metal Oxide) | 30V | 8.3A (Ta), 46A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 22.8nC @ 10V | 1619pF @ 15V | ±20V | - | 840mW (Ta), 25.5W (Tc) | 6.2 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Vishay Siliconix |
MOSFET N-CH 500V 4.5A TO-220-5
|
패키지: TO-220-5 |
재고7,236 |
|
MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 610pF @ 25V | ±20V | Current Sensing | 74W (Tc) | 1.5 Ohm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
||
Infineon Technologies |
MOSFET N-CH 40V 195A TO262
|
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA |
재고4,736 |
|
MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 4V @ 150µA | 225nC @ 10V | 7330pF @ 25V | ±20V | - | 230W (Tc) | 2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
ON Semiconductor |
MOSFET N-CH 30V 40A U8FL
|
패키지: 8-PowerWDFN |
재고6,320 |
|
MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 15.2nC @ 10V | 770pF @ 15V | ±20V | - | 3W (Ta), 26W (Tc) | 9.4 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3
|
패키지: TO-220-3 |
재고17,316 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 2V @ 45µA | 78nC @ 10V | 6100pF @ 25V | ±20V | - | 94W (Tc) | 3.9 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 55V 90A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고4,976 |
|
MOSFET (Metal Oxide) | 55V | 90A (Tc) | 10V | 2.8V @ 1mA | 82nC @ 10V | 5160pF @ 25V | ±20V | - | 158W (Tc) | 7.8 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고14,328 |
|
MOSFET (Metal Oxide) | 650V | 13A (Ta) | 10V | 5V @ 1mA | 17nC @ 10V | 950pF @ 10V | ±30V | - | 40W (Tc) | 380 mOhm @ 6.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 500V 16A
|
패키지: TO-3P-3, SC-65-3 |
재고7,824 |
|
MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 5V @ 250µA | 75nC @ 10V | 3000pF @ 25V | ±30V | - | 200W (Tc) | 320 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 20A TO247
|
패키지: TO-247-3 |
재고10,812 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 4V @ 1mA | 60nC @ 10V | 1400pF @ 25V | ±20V | - | 120W (Tc) | 196 mOhm @ 9.5A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 31A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고390,000 |
|
MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | ±20V | - | 255W (Tc) | 99 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CH 60V 260MA 3DFN
|
패키지: 3-UFDFN |
재고295,560 |
|
MOSFET (Metal Oxide) | 60V | 260mA (Ta) | 5V, 10V | 2V @ 250µA | - | 25pF @ 25V | ±20V | - | 430mW (Ta) | 3 Ohm @ 115mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1006-3 | 3-UFDFN |
||
Panjit International Inc. |
60V N-CHANNEL ENHANCEMENT MODE M
|
패키지: - |
재고16,092 |
|
MOSFET (Metal Oxide) | 60 V | 8.5A (Ta), 42A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 40 nC @ 10 V | 2142 pF @ 25 V | ±20V | - | 2.4W (Ta), 71.4W (Tc) | 12mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN5060-8 | 8-PowerVDFN |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 73.5A/400A TOLLA
|
패키지: - |
재고27,012 |
|
MOSFET (Metal Oxide) | 60 V | 73.5A (Ta), 400A (Tc) | 6V, 10V | 3.3V @ 250µA | 300 nC @ 10 V | 14200 pF @ 30 V | ±20V | - | 8.3W (Ta), 500W (Tc) | 0.85mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TOLLA | 8-PowerSFN |
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Nexperia USA Inc. |
MOSFET N-CH 100V 158A LFPAK56
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 120A (Tj) | 10V | - | 63 nC @ 10 V | - | ±20V | - | 294W | - | 175°C (TJ) | Surface Mount | LFPAK56; Power-SO8 | SOT-1023, 4-LFPAK |
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onsemi |
SILICON CARBIDE (SIC) MOSFET EL
|
패키지: - |
재고960 |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 73A (Tc) | 18V | 4.4V @ 15mA | 107 nC @ 18 V | 2430 pF @ 800 V | +22V, -10V | - | 313W (Tc) | 39mOhm @ 30A, 18V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Fairchild Semiconductor |
N-CHANNEL, MOSFET
|
패키지: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 12A (Ta), 46A (Tc) | 4.5V, 10V | 3V @ 250µA | 18 nC @ 5 V | 1230 pF @ 15 V | ±20V | - | 1.5W (Ta), 56W (Tc) | 12mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Microchip Technology |
SICFET N-CH 1.2KV 77A SOT227
|
패키지: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 1200 V | 77A (Tc) | 20V | 2.8V @ 1mA | 232 nC @ 20 V | 3020 pF @ 1000 V | +25V, -10V | - | 278W (Tc) | 31mOhm @ 40A, 20V | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 (ISOTOP®) | SOT-227-4, miniBLOC |
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Sanyo |
N-CHANNEL SILICON MOSFET
|
패키지: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics Corporation |
MOSFET P-CH 12V 5A 6WSOF
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 12 V | 5A (Ta) | - | 1.5V @ 1mA | 5.5 nC @ 10 V | 610 pF @ 10 V | - | - | 200mW (Ta) | 50mOhm @ 2.5A, 4.5V | 150°C (TJ) | Surface Mount | 6-WSOF | 6-SMD, Flat Leads |
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onsemi |
MOSFET N-CH 150V 169A 8HPSOF
|
패키지: - |
재고16,566 |
|
MOSFET (Metal Oxide) | 150 V | 169A (Tc) | 10V | 4V @ 250µA | 90 nC @ 10 V | 5805 pF @ 75 V | ±20V | - | 500W (Tj) | 6.3mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 200A TO220SM
|
패키지: - |
재고3,000 |
|
MOSFET (Metal Oxide) | 40 V | 200A (Ta) | 6V, 10V | 3V @ 1mA | 214 nC @ 10 V | 14920 pF @ 10 V | ±20V | - | 375W (Tc) | 0.9mOhm @ 100A, 10V | 175°C | Surface Mount | TO-220SM(W) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
P-CHANNEL 30 V (D-S) MOSFET POWE
|
패키지: - |
재고15,486 |
|
MOSFET (Metal Oxide) | 30 V | 19.1A (Ta), 65.7A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 87 nC @ 10 V | 3250 pF @ 15 V | ±25V | - | 4.8W (Ta), 56.8W (Tc) | 7.3mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Vishay Siliconix |
N-CHANNEL 600V
|
패키지: - |
재고8,880 |
|
MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 4V @ 250µA | 64 nC @ 10 V | 1205 pF @ 100 V | ±30V | - | 147W (Tc) | 309mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |