페이지 1277 - 트랜지스터 - FET, MOSFET - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - FET, MOSFET - 단일

기록 42,029
페이지  1,277/1,502
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부품 번호
제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRFR3708TRL
Infineon Technologies

MOSFET N-CH 30V 61A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 87W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,480
MOSFET (Metal Oxide)
30V
61A (Tc)
2.8V, 10V
2V @ 250µA
24nC @ 4.5V
2417pF @ 15V
±12V
-
87W (Tc)
12.5 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SI4435DY
Infineon Technologies

MOSFET P-CH 30V 8A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고392,700
MOSFET (Metal Oxide)
30V
8A (Tc)
4.5V, 10V
1V @ 250µA
60nC @ 10V
2320pF @ 15V
±20V
-
2.5W (Ta)
20 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot AO4433
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 11A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 20V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 15V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 11A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고172,608
MOSFET (Metal Oxide)
30V
11A (Ta)
5V, 20V
3.5V @ 250µA
38nC @ 10V
2200pF @ 15V
±25V
-
3W (Ta)
14 mOhm @ 11A, 20V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
NTB90N02G
ON Semiconductor

MOSFET N-CH 24V 90A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,752
MOSFET (Metal Oxide)
24V
90A (Ta)
4.5V, 10V
3V @ 250µA
29nC @ 4.5V
2120pF @ 20V
±20V
-
85W (Tc)
5.8 mOhm @ 90A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BS108,126
NXP

MOSFET N-CH 200V 300MA SOT54

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.8V
  • Vgs(th) (Max) @ Id: 1.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 2.8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고3,440
MOSFET (Metal Oxide)
200V
300mA (Ta)
2.8V
1.8V @ 1mA
-
120pF @ 25V
±20V
-
1W (Ta)
5 Ohm @ 100mA, 2.8V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot FQAF44N08
Fairchild/ON Semiconductor

MOSFET N-CH 80V 35.6A TO-3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 17.8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: SC-94
패키지: SC-94
재고10,404
MOSFET (Metal Oxide)
80V
35.6A (Tc)
10V
4V @ 250µA
50nC @ 10V
1430pF @ 25V
±25V
-
83W (Tc)
34 mOhm @ 17.8A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3PF
SC-94
hot IRFZ24STRR
Vishay Siliconix

MOSFET N-CH 60V 17A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고28,500
MOSFET (Metal Oxide)
60V
17A (Tc)
10V
4V @ 250µA
25nC @ 10V
640pF @ 25V
±20V
-
3.7W (Ta), 60W (Tc)
100 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB80N06S4L05ATMA2
Infineon Technologies

MOSFET N-CH 60V 80A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,024
MOSFET (Metal Oxide)
60V
80A (Tc)
4.5V, 10V
2.2V @ 60µA
110nC @ 10V
8180pF @ 25V
±16V
-
107W (Tc)
5.1 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPS60R2K1CEAKMA1
Infineon Technologies

CONSUMER

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고2,752
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXFH88N20Q
IXYS

MOSFET N-CH 200V 88A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 44A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
패키지: TO-247-3
재고2,080
MOSFET (Metal Oxide)
200V
88A (Tc)
10V
4V @ 4mA
146nC @ 10V
4150pF @ 25V
±30V
-
500W (Tc)
30 mOhm @ 44A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
SIE822DF-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 50A 10-POLARPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 18.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 10-PolarPAK? (S)
  • Package / Case: 10-PolarPAK? (S)
패키지: 10-PolarPAK? (S)
재고6,992
MOSFET (Metal Oxide)
20V
50A (Tc)
4.5V, 10V
3V @ 250µA
78nC @ 10V
4200pF @ 10V
±20V
-
5.2W (Ta), 104W (Tc)
3.4 mOhm @ 18.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
10-PolarPAK? (S)
10-PolarPAK? (S)
STD4N90K5
STMicroelectronics

N-CHANNEL 900 V, 0.25 OHM TYP.,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 173pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: Current Sensing
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,312
MOSFET (Metal Oxide)
900V
3A
10V
5V @ 100µA
5.3nC @ 10V
173pF @ 100V
±30V
Current Sensing
60W (Tc)
2.1 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
TK100E06N1,S1X
Toshiba Semiconductor and Storage

MOSFET N CH 60V 100A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 255W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: TO-220-3
재고7,656
MOSFET (Metal Oxide)
60V
100A (Ta)
10V
4V @ 1mA
140nC @ 10V
10500pF @ 30V
±20V
-
255W (Tc)
2.3 mOhm @ 50A, 10V
150°C (TJ)
Through Hole
TO-220
TO-220-3
TK20J60U(F)
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A TO-3PN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P(N)
  • Package / Case: TO-3P-3, SC-65-3
패키지: TO-3P-3, SC-65-3
재고13,608
MOSFET (Metal Oxide)
600V
20A (Ta)
10V
5V @ 1mA
27nC @ 10V
1470pF @ 10V
±30V
-
190W (Tc)
190 mOhm @ 10A, 10V
150°C (TJ)
Through Hole
TO-3P(N)
TO-3P-3, SC-65-3
hot STR2N2VH5
STMicroelectronics

MOSFET N-CH 20V 2.3A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 367pF @ 16V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Tc)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고330,000
MOSFET (Metal Oxide)
20V
-
2.5V, 4.5V
700mV @ 250µA (Min)
4.6nC @ 4.5V
367pF @ 16V
±8V
-
350mW (Tc)
30 mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
2SK2231(TE16R1,NQ)
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 5A PW-MOLD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PW-MOLD
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고16,020
MOSFET (Metal Oxide)
60V
5A (Ta)
4V, 10V
2V @ 1mA
12nC @ 10V
370pF @ 10V
±20V
-
20W (Tc)
160 mOhm @ 2.5A, 10V
150°C (TJ)
Surface Mount
PW-MOLD
TO-252-3, DPak (2 Leads + Tab), SC-63
PHB45NQ10T,118
Nexperia USA Inc.

MOSFET N-CH 100V 47A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고19,146
MOSFET (Metal Oxide)
100V
47A (Tc)
10V
4V @ 1mA
61nC @ 10V
2600pF @ 25V
±20V
-
150W (Tc)
25 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot SI7108DN-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 14A 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
패키지: PowerPAK? 1212-8
재고1,118,196
MOSFET (Metal Oxide)
20V
14A (Ta)
4.5V, 10V
2V @ 250µA
30nC @ 4.5V
-
±16V
-
1.5W (Ta)
4.9 mOhm @ 22A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
hot IRF540NSTRLPBF
Infineon Technologies

MOSFET N-CH 100V 33A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 44 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고35,376
MOSFET (Metal Oxide)
100V
33A (Tc)
10V
4V @ 250µA
71nC @ 10V
1960pF @ 25V
±20V
-
130W (Tc)
44 mOhm @ 16A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
2N7002WKX-7
Diodes Incorporated

MOSFET N-CH 60V 115MA SOT323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
패키지: -
Request a Quote
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
2V @ 250µA
-
50 pF @ 25 V
±20V
-
200mW (Ta)
7.5Ohm @ 50mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
FDB9409-F085
onsemi

MOSFET N-CH 40V 80A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tj)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
Request a Quote
MOSFET (Metal Oxide)
40 V
80A (Tc)
10V
4V @ 250µA
56 nC @ 10 V
2980 pF @ 25 V
±20V
-
94W (Tj)
3.5mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FQP9N25
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 420mOhm @ 4.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
250 V
9.4A (Tc)
10V
5V @ 250µA
20 nC @ 10 V
700 pF @ 25 V
±30V
-
90W (Tc)
420mOhm @ 4.7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
SI2302A
UMW

20V 2.8A 1.25W 115MR@2.5V,3.1A 1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
재고6,753
MOSFET (Metal Oxide)
20 V
3.6A (Ta)
2.5V, 4.5V
1.9V @ 250µA
10 nC @ 4.5 V
300 pF @ 10 V
±8V
-
1.25W (Ta)
85mOhm @ 3.6A, 4.5V
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
IAUC60N06S5L073ATMA1
Infineon Technologies

MOSFET_)40V 60V) PG-TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 19µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 30 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-33
  • Package / Case: 8-PowerTDFN
패키지: -
재고14,640
MOSFET (Metal Oxide)
60 V
60A (Tj)
4.5V, 10V
2.2V @ 19µA
22.6 nC @ 10 V
1655 pF @ 30 V
±16V
-
52W (Tc)
7.3mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8-33
8-PowerTDFN
NTD4970N-1G
onsemi

MOSFET N-CH 30V 38A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 774 pF @ 15 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
패키지: -
Request a Quote
MOSFET (Metal Oxide)
30 V
8.5A (Ta), 36A (Tc)
-
2.5V @ 250µA
8.2 nC @ 4.5 V
774 pF @ 15 V
-
-
-
11mOhm @ 30A, 10V
-
Through Hole
IPAK
TO-251-3 Short Leads, IPAK, TO-251AA
R6547KNZ4C13
Rohm Semiconductor

MOSFET N-CH 650V 47A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.72mA
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 25.8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
650 V
47A (Tc)
10V
5V @ 1.72mA
100 nC @ 10 V
4100 pF @ 25 V
±20V
-
480W (Tc)
80mOhm @ 25.8A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
AO3457-ML
MOSLEADER

P 30V -4.3A SOT23-3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
QM2413K-ML
MOSLEADER

Single P -20V -2.2A SOT23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-