이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 80V 80A TO220-3
|
패키지: TO-220-3 |
재고2,704 |
|
MOSFET (Metal Oxide) | 80V | 80A (Tc) | 6V, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | ±20V | - | 150W (Tc) | 5.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH SC89-3
|
패키지: SC-89, SOT-490 |
재고2,272 |
|
MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 1nC @ 4.5V | 45pF @ 10V | ±8V | - | 280mW (Ta) | 550 mOhm @ 500mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
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Renesas Electronics America |
MOSFET N-CH 900V 6A TO-3P
|
패키지: TO-3P-3, SC-65-3 |
재고6,544 |
|
MOSFET (Metal Oxide) | 900V | 8A (Ta) | 10V | - | - | 1730pF @ 10V | ±30V | - | 100W (Tc) | 1.6 Ohm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
ON Semiconductor |
MOSFET P-CH 20V 2.3A 6-WDFN
|
패키지: 6-WDFN Exposed Pad |
재고6,128 |
|
MOSFET (Metal Oxide) | 20V | 2.3A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 6.2nC @ 4.5V | 531pF @ 10V | ±8V | Schottky Diode (Isolated) | 710mW (Ta) | 100 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
||
ON Semiconductor |
MOSFET N-CH 24V 12A DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고5,104 |
|
MOSFET (Metal Oxide) | 24V | 12A (Ta), 85A (Tc) | 4.5V, 10V | 2V @ 250µA | 17.7nC @ 5V | 2050pF @ 20V | ±20V | - | 1.25W (Ta), 78.1W (Tc) | 5.2 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 79A TO-220
|
패키지: TO-220-3 |
재고103,464 |
|
MOSFET (Metal Oxide) | 150V | 79A (Tc) | 10V | 5V @ 250µA | 73nC @ 10V | 3410pF @ 25V | ±30V | - | 463W (Tc) | 30 mOhm @ 39.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 800V 7.2A TO-3P
|
패키지: TO-3P-3, SC-65-3 |
재고38,148 |
|
MOSFET (Metal Oxide) | 800V | 7.2A (Tc) | 10V | 5V @ 250µA | 52nC @ 10V | 1850pF @ 25V | ±30V | - | 198W (Tc) | 1.5 Ohm @ 3.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 250V 14A TO-220F
|
패키지: TO-220-3 Full Pack |
재고6,560 |
|
MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 5V @ 250µA | 65nC @ 10V | 2450pF @ 25V | ±30V | - | 55W (Tc) | 110 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
ON Semiconductor |
MOSFET N-CH 200V 0.25A TO-92
|
패키지: TO-226-3, TO-92-3 (TO-226AA) |
재고3,232 |
|
MOSFET (Metal Oxide) | 200V | 250mA (Ta) | 10V | 3V @ 1mA | - | 60pF @ 25V | ±20V | - | 350mW (Ta) | 6.4 Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Infineon Technologies |
MOSFET N-CH TO263-3
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고4,896 |
|
MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 4.5V @ 200µA | 12nC @ 10V | 557pF @ 100V | ±20V | - | 171W (Tc) | 600 mOhm @ 2.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 650V TO-220-3
|
패키지: TO-220-3 |
재고6,544 |
|
MOSFET (Metal Oxide) | 650V | 11.4A (Tc) | 10V | 4.5V @ 440µA | 41nC @ 10V | 1110pF @ 100V | ±20V | - | 104.2W (Tc) | 310 mOhm @ 4.4A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 20V 0.45A SC89-3
|
패키지: SC-89, SOT-490 |
재고197,820 |
|
MOSFET (Metal Oxide) | 20V | 450mA (Ta) | 4.5V | 1V @ 250µA | 2.5nC @ 4.5V | 45pF @ 10V | ±8V | - | 190mW (Ta) | 760 mOhm @ 400mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
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IXYS |
MOSFET N-CH 600V 85A TO-264
|
패키지: TO-264-3, TO-264AA |
재고6,880 |
|
MOSFET (Metal Oxide) | 600V | 85A (Tc) | 10V | 4V @ 4mA | 650nC @ 10V | - | ±20V | Super Junction | - | 36 mOhm @ 55A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264A | TO-264-3, TO-264AA |
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Rohm Semiconductor |
MOSFET N-CH 800V 5A TO220
|
패키지: TO-220-2 Full Pack |
재고89,196 |
|
MOSFET (Metal Oxide) | 800V | 5A (Tc) | 10V | 5V @ 1mA | 21nC @ 10V | 485pF @ 25V | ±30V | - | 40W (Tc) | 2.08 Ohm @ 2.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V DPAK
|
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고117,528 |
|
MOSFET (Metal Oxide) | 600V | 2.6A (Tc) | 10V | 4.5V @ 50µA | 12nC @ 10V | 312pF @ 25V | ±30V | - | 61W (Tc) | 3.6 Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 650V 47A TO-247
|
패키지: TO-247-3 |
재고1,142,304 |
|
MOSFET (Metal Oxide) | 650V | 47A (Tc) | 10V | 3.9V @ 2.7mA | 320nC @ 10V | 6800pF @ 25V | ±20V | - | 415W (Tc) | 70 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Diodes Incorporated |
MOSFET P-CH 20V 0.82A SOT323
|
패키지: SC-70, SOT-323 |
재고3,600 |
|
MOSFET (Metal Oxide) | 20V | 820mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 0.62nC @ 4.5V | 59.76pF @ 16V | ±6V | - | 310mW (Ta) | 750 mOhm @ 430mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
Vishay Siliconix |
MOSFET N-CH 600V 32A TO220AB
|
패키지: TO-220-3 |
재고12,438 |
|
MOSFET (Metal Oxide) | 600V | 32A (Tc) | 10V | 4V @ 250µA | 132nC @ 10V | 2760pF @ 100V | ±30V | - | 250W (Tc) | 94 mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 100V 30A 1212-8
|
패키지: PowerPAK? 1212-8 |
재고106,440 |
|
MOSFET (Metal Oxide) | 100V | 30A (Tc) | 4.5V, 10V | 3V @ 250µA | 29nC @ 10V | 802pF @ 50V | ±20V | - | 3.7W (Ta), 52W (Tc) | 23.5 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
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Nexperia USA Inc. |
SMALL SIGNAL MOSFET FOR AUTOMOTI
|
패키지: - |
재고18,000 |
|
MOSFET (Metal Oxide) | 20 V | 3.4A (Ta), 6.7A (Tc) | 2.5V, 8V | 1.3V @ 250µA | 5 nC @ 4.5 V | 365 pF @ 10 V | ±12V | - | 2W (Ta), 7.5W (Tc) | 96mOhm @ 3.4A, 8V | -55°C ~ 175°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
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Infineon Technologies |
OPTIMOS 5 POWER-TRANSISTOR 60V
|
패키지: - |
재고15,915 |
|
MOSFET (Metal Oxide) | 80 V | 15.6A (Ta), 99A (Tc) | 4.5V, 10V | 2.3V @ 47µA | 38 nC @ 10 V | 3250 pF @ 40 V | ±20V | - | 2.5W (Ta), 100W (Tc) | 4.6mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-WHTFN-9 | 9-PowerWDFN |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
패키지: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
POWER MOSFET, N-CHANNEL, SUPERFE
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 4V @ 2.8mA | 58 nC @ 10 V | 2833 pF @ 400 V | ±30V | - | 208W (Tc) | 95mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Micro Commercial Co |
MOSFET
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 75 nC @ 10 V | 3302 pF @ 30 V | ±20V | - | 96W (Tj) | 13mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 650V 32A TO247-3-41
|
패키지: - |
재고720 |
|
MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 4.5V @ 820µA | 68 nC @ 10 V | 3288 pF @ 400 V | ±20V | - | 171W (Tc) | 75mOhm @ 16.4A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 25A 8-SOPA
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 25A (Ta) | - | 2.3V @ 1mA | 22 nC @ 10 V | 1375 pF @ 10 V | - | - | - | 21mOhm @ 13A, 10V | - | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V POWERDI506
|
패키지: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 15A (Ta), 92A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 106 nC @ 10 V | 5639 pF @ 15 V | ±20V | - | 1.6W | 7.5mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 80V 17.4A/63A PPAK
|
패키지: - |
재고46,644 |
|
MOSFET (Metal Oxide) | 80 V | 17.4A (Ta), 63A (Tc) | 7.5V, 10V | 3.8V @ 250µA | 42 nC @ 10 V | 1930 pF @ 40 V | ±20V | - | 5W (Ta), 65.7W (Tc) | 7.2mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S |